公开(公告)号：US06723252B1

公开(公告)日：2004-04-20

申请号：US09595713

申请日：2000-06-16

申请人： Richard Hsiao ,  John I. Kim

发明人： Richard Hsiao ,  John I. Kim

IPC分类号： G11B521

CPC分类号： G11B5/3116 ,  G11B5/1871 ,  G11B5/232 ,  G11B5/3163

摘要： The present invention includes a two-step etching process for notching the P1 pole of the write head element of a magnetic head. In a first step, the preferred embodiment utilizes a combination of C2F6 and argon gases (designated as C2F6/Ar) as the etchant gas to preferentially etch portions of the alumna write gap layer. Thereafter, in the second step, argon is used as the etchant gas to preferentially etch the P1 pole material. The C2F6/Ar etchant gas preferably includes C2F6 gas in a concentration range of from 50% to 90%, with a preferred concentration range being from 70% to 80%. The etching of the alumna write gap layer is preferably conducted with a first echant ion beam angle of from 5° to 30°, and a second etchant ion beam angle of from 65° to 85°.

摘要翻译： 本发明包括用于切割磁头的写入头元件的P1极的两步蚀刻工艺。 在第一步骤中，优选实施例利用C2F6和氩气（称为C2F6 / Ar）的组合作为蚀刻剂气体来优先蚀刻校准写间隙层的部分。 此后，在第二步骤中，使用氩作为蚀刻剂气体来优先蚀刻P1极材料。 C2F6 / Ar蚀刻剂气体优选包含浓度范围为50％至90％的C2F6气体，优选浓度范围为70％至80％。 校准写入间隙层的蚀刻优选以5°至30°的第一附属离子束角度和65°至85°的第二蚀刻剂离子束角度进行。

公开(公告)号：US06539610B1

公开(公告)日：2003-04-01

申请号：US09616838

申请日：2000-07-14

申请人： Jyh-Shuey (Jerry) Lo ,  John I. Kim ,  Timothy J. Moran

发明人： Jyh-Shuey (Jerry) Lo ,  John I. Kim ,  Timothy J. Moran

IPC分类号： G11B5127

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A high throughput method for producing the narrow track width inductive head is also provided, whereby the heads may be manufactured in substantial volumes. The new head may be merged or piggy-backed MR or GMR heads, comprising a first pole piece, P1, and a second pole piece, P2, and is distinctly characterized by write track width is significantly reduced by a preliminary ion milling process before P1 notching is performed. The preliminary step utilizes an ion milling process to trim the write track width, P2B, at an angle between 45 to 85 degrees from the wafer normal. The MR head may then undergo conventional P1 notching.

摘要翻译： 还提供了用于生产窄轨道宽度感应头的高通量方法，由此可以大量地制造头部。 新的头部可以合并或带有背负的MR或GMR头，包括第一极靴P1和第二极靴P2，并且明显的特征在于通过在P1之前的初步离子铣削加工显着地减少写入轨道宽度 进行切口。 该初步步骤利用离子铣削工艺来以与晶片法线成45至85度的角度来修剪写入轨道宽度P2B。 然后，MR头可以经历常规的P1切口。

公开(公告)号：US08551347B2

公开(公告)日：2013-10-08

申请号：US12341866

申请日：2008-12-22

申请人： Amanda Baer ,  Wen-Chien David Hsiao ,  John I. Kim ,  Vladimir Nikitin ,  Trevor W. Olson ,  John Bruce Piggott, Jr. ,  Yuan Yao

发明人： Amanda Baer ,  Wen-Chien David Hsiao ,  John I. Kim ,  Vladimir Nikitin ,  Trevor W. Olson ,  John Bruce Piggott, Jr. ,  Yuan Yao

IPC分类号： G11B5/127 ,  B44C1/22

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163

摘要： A method in one embodiment includes forming a layer of a nonmagnetic material above an upper surface of a substrate; forming a resist structure above the layer of nonmagnetic material, wherein the resist structure has an undercut; removing a portion of the layer of nonmagnetic material not covered by the resist structure; depositing a layer of magnetic material above the substrate adjacent a remaining portion of the layer of nonmagnetic material such that at least portions of the layer of magnetic material and the remaining portion of the layer of nonmagnetic material lie in a common plane; removing the resist structure; and forming a write pole above the layer of magnetic material and the remaining portion of the layer of nonmagnetic material. Additional methods are also presented.

摘要翻译： 一个实施例中的方法包括在衬底的上表面上方形成非磁性材料层; 在非磁性材料层之上形成抗蚀剂结构，其中抗蚀剂结构具有底切; 去除未被抗蚀剂结构覆盖的非磁性材料层的一部分; 在所述基板的上方邻近所述非磁性材料层的剩余部分沉积一层磁性材料，使得所述磁性材料层和所述非磁性材料层的剩余部分的至少部分位于公共平面中; 去除抗蚀剂结构; 以及在磁性材料层和非磁性材料层的剩余部分之上形成写入极。 还介绍了其他方法。

公开(公告)号：US20100155366A1

公开(公告)日：2010-06-24

申请号：US12343044

申请日：2008-12-23

申请人： Amanda Baer ,  Wen-Chien David Hsiao ,  John I. Kim ,  Yinshi Liu ,  Vladimir Nikitin ,  Trevor W. Olson ,  Hicham Moulay Sougrati ,  Yuan Yao

发明人： Amanda Baer ,  Wen-Chien David Hsiao ,  John I. Kim ,  Yinshi Liu ,  Vladimir Nikitin ,  Trevor W. Olson ,  Hicham Moulay Sougrati ,  Yuan Yao

IPC分类号： B44C1/22

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116

摘要： A method for manufacturing a magnetic write head having a stepped, recessed, high magnetic moment pole connected with a write pole. The stepped pole structure helps to channel magnetic flux to the write pole without leaking write field to the magnetic medium. This allows the write head to maintain a high write field strength at very small bit sizes. The method includes depositing a dielectric layer and a first CMP layer over substrate that can include a magnetic shaping layer. A mask is formed over the dielectric layer, the mask having an opening to define the stepped pole structure. The image of the mask is transferred into the dielectric layer. A high magnetic moment material is deposited and a chemical mechanical polishing is performed to planarize the magnetic material and dielectric layer.

摘要翻译： 一种用于制造具有与写入极连接的阶梯式，凹入的高磁矩极的磁性写入头的方法。 阶梯式极点结构有助于将磁通量传递到写入极，而不会将写入场泄漏到磁性介质。 这允许写头在非常小的位尺寸下保持高的写场强度。 该方法包括在可包括磁性成形层的衬底上沉积介电层和第一CMP层。 在电介质层上形成掩模，掩模具有限定阶梯极结构的开口。 掩模的图像被转移到电介质层中。 沉积高磁矩材料并执行化学机械抛光以使磁性材料和电介质层平坦化。

公开(公告)号：US07254884B2

公开(公告)日：2007-08-14

申请号：US10946412

申请日：2004-09-20

申请人： Negar Karimi ,  John I. Kim ,  Andrew Crehan Walker ,  Yeak-Chong Wong

发明人： Negar Karimi ,  John I. Kim ,  Andrew Crehan Walker ,  Yeak-Chong Wong

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49036 ,  Y10T29/49037 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Methods for fabricating pole piece tips for a magnetic transducer are disclosed. The ion-milling operations for trimming P2 and notching P1 are controlled using feed-forward and feedback. The preferred method of the invention includes steps for setting four time values used in different phases of the ion-milling process based on feed-forward and feedback of measured values including the P2 width measured in the mask, multiple P2B measurements and measurement of the notch depth.

摘要翻译： 公开了用于制造用于磁换能器的极片尖端的方法。 用于修整P 2和开槽P 1的离子铣削操作使用前馈和反馈进行控制。 本发明的优选方法包括在离子铣削过程的不同阶段中使用的四个时间值的步骤，其基于前馈和包括在掩模中测量的P 2宽度的测量值的反馈，多个P 2 B测量和测量 的凹口深度。

公开(公告)号：US06631546B1

公开(公告)日：2003-10-14

申请号：US09496070

申请日：2000-02-01

申请人： Thomas Edward Dinan ,  Richard Hsiao ,  John I. Kim ,  Ashok Lahiri ,  Clinton David Snyder

发明人： Thomas Edward Dinan ,  Richard Hsiao ,  John I. Kim ,  Ashok Lahiri ,  Clinton David Snyder

IPC分类号： G11R5127

CPC分类号： C25D5/022 ,  G11B5/127 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49155 ,  Y10T29/49156

摘要： A method of manufacturing includes 2 mushroom plating process starts with an overplated component which includes an enlarged mushroom head having outer portions which overhang a resist layer. The next step in the first process embodiment is a heating step in which the resist layer is hard baked. Thereafter, using a dry etch process, such as a reactive ion etch (RIE) process, the hard baked resist layer is removed in all areas except beneath the overhang of the mushroom head. The area beneath the overhang thereby remains filled with hard baked resist. Thereafter, the device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. In an alternative process embodiment of the present invention the dry etch process is conducted first upon the resist layer, such that the resist layer is removed in all areas except under the overhang. Thereafter, the device is baked, such that hard baked resist remains beneath the overhang. Ultimately, the device is encapsulated and no voids or redeposition problems exist beneath the overhang due to the presence of the hard baked resist.

摘要翻译： 一种制造方法包括2个蘑菇电镀工艺，其中包括一个具有外伸部分的扩大的蘑菇头的一个过度的部件，其上覆盖了一个抗蚀剂层。 第一工艺实施例中的下一步骤是其中抗蚀剂层被硬烘烤的加热步骤。 此后，使用诸如反应离子蚀刻（RIE）工艺的干蚀刻工艺，除了在蘑菇头的突出部以外的所有区域中除去硬烘烤抗蚀剂层。 悬挂下方的区域由此保持充满硬烘烤抗蚀剂。 此后，装置最终被封装，使得由于存在硬烘烤抗蚀剂而在悬垂下不存在空隙和/或再沉积问题。 在本发明的替代方法实施方案中，首先在抗蚀剂层上进行干蚀刻工艺，使得除了在悬垂体之外的所有区域中除去抗蚀剂层。 此后，该装置被烘烤，使得硬烘烤抗蚀剂保留在悬垂物的下方。 最终，器件被封装，由于存在硬烘烤的抗蚀剂，悬臂下方不存在空隙或再沉积问题。

公开(公告)号：US20100296193A1

公开(公告)日：2010-11-25

申请号：US12849796

申请日：2010-08-03

申请人： John I. Kim ,  Aron Pentek

发明人： John I. Kim ,  Aron Pentek

IPC分类号： G11B5/10

CPC分类号： G11B5/1278 ,  G11B5/11 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A perpendicular magnetic recording write head has a write pole, a trapezoidal-shaped trailing shield notch, and a gap between the write pole and notch, with the gap being formed of a nonmagnetic mask film, such as alumina, a nonmagnetic metal protective film and a nonmagnetic gap layer. The write pole has a trailing edge that has a width substantially defining the track width and that faces the front edge of the notch but is spaced from it by the gap. The write pole has nonmagnetic filler material, such as alumina, surrounding it except at its trailing edge, where it is in contact with the gap. A reactive ion beam etching (RIBE) process removes the filler material at the side edges of the write pole and thus widens the opening at the side edges. The nonmagnetic metal film protects the underlying mask film and write pole during the widening of the opening. The gap layer and trailing shield notch are deposited into a widened opening above the write pole, so the sides of the notch diverge to cause the generally trapezoidal shape.

摘要翻译： 垂直磁记录写头具有写极，梯形后屏蔽切口和写极与凹口之间的间隙，间隙由非磁性掩模膜形成，例如氧化铝，非磁性金属保护膜和 非磁隙层。 写极具有后缘，其具有基本上限定轨道宽度的宽度，并且面向凹口的前边缘，但是与间隙隔开。 写极具有非磁性填充材料，例如氧化铝，除了在其后缘处与间隙接触的位置之外围绕它。 反应离子束蚀刻（RIBE）工艺去除了写极的侧边缘处的填充材料，从而加宽了侧边缘处的开口。 非磁性金属膜在开口扩大期间保护下面的掩模膜和写极。 间隙层和后屏蔽切口沉积在写极上方的加宽开口中，因此凹口的侧面发散以引起大致梯形的形状。

公开(公告)号：US07788797B2

公开(公告)日：2010-09-07

申请号：US11735894

申请日：2007-04-16

申请人： John I. Kim ,  Aron Pentek

发明人： John I. Kim ,  Aron Pentek

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/1278 ,  G11B5/11 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for making a perpendicular magnetic recording write head that has a write pole, a trapezoidal-shaped trailing shield notch, and a gap between the write pole and notch uses a reactive ion beam etching (RIBE) process in CHF3 that removes filler material at the side edges of the write pole and thus widens the opening at the side edges. The gap is formed of a nonmagnetic mask film, such as alumina, a nonmagnetic metal protective film and a nonmagnetic gap layer. The nonmagnetic metal film is substantially less reactive to CHF3 than the filler material and protects the underlying mask film and write pole during the widening of the opening. The gap layer and trailing shield notch are deposited into a widened opening above the write pole, so the sides of the notch diverge to cause the generally trapezoidal shape.

摘要翻译： 用于制造具有写入极，梯形尾部屏蔽切口以及写入极和凹口之间的间隙的垂直磁记录写头的方法使用在CHF 3中的反应离子束蚀刻（RIBE）工艺，该方法除去填充材料 写极的侧边缘，从而使侧边缘处的开口变宽。 间隙由非磁性掩模膜形成，例如氧化铝，非磁性金属保护膜和非磁性间隙层。 非磁性金属膜与填充材料基本上比CHF3反应性低，并且在开口加宽期间保护下面的掩模膜和写极。 间隙层和后屏蔽切口沉积在写极上方的加宽开口中，因此凹口的侧面发散以引起大致梯形的形状。

公开(公告)号：US20100159154A1

公开(公告)日：2010-06-24

申请号：US12341866

申请日：2008-12-22

申请人： Amanda Baer ,  Wen-Chien David Hsiao ,  John I. Kim ,  Vladimir Nikitin ,  Trevor W. Olson ,  John Bruce Piggott, JR. ,  Yuan Yao

发明人： Amanda Baer ,  Wen-Chien David Hsiao ,  John I. Kim ,  Vladimir Nikitin ,  Trevor W. Olson ,  John Bruce Piggott, JR. ,  Yuan Yao

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163

摘要： A method in one embodiment includes forming a layer of a nonmagnetic material above an upper surface of a substrate; forming a resist structure above the layer of nonmagnetic material, wherein the resist structure has an undercut; removing a portion of the layer of nonmagnetic material not covered by the resist structure; depositing a layer of magnetic material above the substrate adjacent a remaining portion of the layer of nonmagnetic material such that at least portions of the layer of magnetic material and the remaining portion of the layer of nonmagnetic material lie in a common plane; removing the resist structure; and forming a write pole above the layer of magnetic material and the remaining portion of the layer of nonmagnetic material. Additional methods are also presented.

摘要翻译： 一个实施例中的方法包括在衬底的上表面上方形成非磁性材料层; 在非磁性材料层之上形成抗蚀剂结构，其中抗蚀剂结构具有底切; 去除未被抗蚀剂结构覆盖的非磁性材料层的一部分; 在所述基板的上方邻近所述非磁性材料层的剩余部分沉积一层磁性材料，使得所述磁性材料层和所述非磁性材料层的剩余部分的至少部分位于公共平面中; 去除抗蚀剂结构; 以及在磁性材料层和非磁性材料层的剩余部分之上形成写入极。 还介绍了其他方法。

公开(公告)号：US5277749A

公开(公告)日：1994-01-11

申请号：US778496

申请日：1991-10-17

申请人： Jonathan H. Griffith ,  John I. Kim ,  Thomas L. Leong ,  William J. Tilly ,  Sari Wacks

发明人： Jonathan H. Griffith ,  John I. Kim ,  Thomas L. Leong ,  William J. Tilly ,  Sari Wacks

IPC分类号： G03F7/09 ,  H01L21/027 ,  H01L21/768 ,  C23C14/00

CPC分类号： H01L21/7688 ,  G03F7/094 ,  H01L21/0272 ,  H01L21/76885

摘要： A layer of photoresist provides a stress relief (or cushion) layer between a lift-off polymer layer and a barrier of multi-level lift-off structures. When multiple evaporation steps are required using the same lift-off pattern, the adhesion between organosilicon and organic film is stressed by a first blanked metal film. To prevent delamination between the lift-off polymer layer and RIE barrier photoresist is applied on top of the lift-off polymer and sandwiched between the organosilicon and organic materials. This photoresist acts as a cushion and as an adhesion promoter to reduce delamination after the metal deposition(s).

摘要翻译： 一层光致抗蚀剂在剥离聚合物层和多层剥离结构的屏障之间提供应力消除（或缓冲）层。 当使用相同的剥离图案需要多个蒸发步骤时，有机硅和有机薄膜之间的粘合力被第一冲裁金属薄膜所压制。 为了防止剥离聚合物层和RIE阻挡光致抗蚀剂之间的分层施加在剥离聚合物的顶部并夹在有机硅和有机材料之间。 该光致抗蚀剂用作缓冲垫和作为粘合促进剂以减少金属沉积之后的分层。