摘要:
A semiconductor memory device includes: a substrate including a cell region and a connection region; a first word line stack comprising a plurality of first word lines that extend to the connection region and are stacked on the cell region; a second word line stack comprising a plurality of second word lines that extend to the connection region and are stacked on the cell region, the second word line being adjacent to the first word line stack; vertical channels in the cell region of the substrate, the vertical channels being connected to the substrate and coupled with the plurality of first and second word lines; a bridge region that connects the first word lines of the first word line stack with the second word lines of the second word line stack; and a local planarized region under the bridge region.
摘要:
A semiconductor device includes a substrate with an active region defined by a device isolation layer. A word line extends over the active region in a first direction, and a plurality of interconnections extends over the word line in a second direction perpendicular to the first direction. A contact pad is disposed between and spaced apart from the word line and the plurality of interconnections, extending in the first direction to overlap the plurality of interconnections and the active region when viewed from a plan view. A lower contact plug electrically connects the contact pad to the active region. An upper contact plug electrically connects the contact pad to one of the plurality of interconnections.
摘要:
A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer; forming cylinder type lower electrodes in the open parts; forming a first upper electrode over an entire surface of a structure including the cylinder type lower electrodes to fill the cylinder type lower electrodes; defining a through hole that passes through portions of the first upper electrode and the support layer; removing the mold layer through the through hole and exposing the cylinder type lower electrodes; forming a second upper electrode to fill the through hole and spaces between the cylinder type lower electrodes; and forming a third upper electrode to connect the second upper electrode and the first upper electrode with each other.
摘要:
A liquid crystal display (LCD) capable of enhancing display quality includes a voltage generation unit, a clock generation unit, a gate driving unit, and a display unit. The voltage generation unit outputs a gate-on voltage and first and second gate-off voltages that are different from each other. The clock generation unit outputs a first clock signal and a second clock signal whose phase is opposite to the phase of the first clock signal. The first clock signal swings between the gate-on voltage and the first gate-off voltage. The gate driving unit is provided with the first clock signal, the second clock signal, and the second gate-off voltage and outputs a gate signal. The display unit includes a plurality of pixels that are turned on or off in response to the gate signal and that display an image.
摘要:
A method for fabricating a semiconductor device includes: forming an etch stop pattern over a conductive layer, the etch stop pattern having a first opening exposing a top surface of the conductive layer; forming an insulation layer over the etch stop pattern; selectively etching the insulation layer to form a second opening exposing the top surface of the conductive layer; and enlarging the second opening until the etch stop pattern is exposed.
摘要:
An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
摘要:
A liquid crystal display (LCD) capable of enhancing display quality includes a voltage generation unit, a clock generation unit, a gate driving unit, and a display unit. The voltage generation unit outputs a gate-on voltage and first and second gate-off voltages that are different from each other. The clock generation unit outputs a first clock signal and a second clock signal whose phase is opposite to the phase of the first clock signal. The first clock signal swings between the gate-on voltage and the first gate-off voltage. The gate driving unit is provided with the first clock signal, the second clock signal, and the second gate-off voltage and outputs a gate signal. The display unit includes a plurality of pixels that are turned on or off in response to the gate signal and that display an image.
摘要:
A circuit board outputs a plurality of signals through first to n-th connection portions. Each of the connection portions includes a ground pad, signal output pads outputting the signals, and conductive dummy pads insulated from the ground pad and the signal output pads. The plurality of signals include gate driving signals and data driving signals.
摘要:
Provided is a composition that contains, as an active ingredient, an extract or polysaccharides separated from the leaves and/or stems of plants belonging to Panax genus, for an anticancer drug or its adjuvant, having an effect on the activity of hemotopoiesis enhancement, cancer metastasis inhibition, bone marrow defense, etc . . . , and a process for preparation of the extract from the leaves and/or stems of plants belonging to Panax genus.
摘要:
A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer; forming cylinder type lower electrodes in the open parts; forming a first upper electrode over an entire surface of a structure including the cylinder type lower electrodes to fill the cylinder type lower electrodes; defining a through hole that passes through portions of the first upper electrode and the support layer; removing the mold layer through the through hole and exposing the cylinder type lower electrodes; forming a second upper electrode to fill the through hole and spaces between the cylinder type lower electrodes; and forming a third upper electrode to connect the second upper electrode and the first upper electrode with each other.