Methods of fabricating semiconductor device

    公开(公告)号:US10431459B2

    公开(公告)日:2019-10-01

    申请号:US15668689

    申请日:2017-08-03

    摘要: An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.

    Ion beam etching devices
    2.
    发明授权

    公开(公告)号:US10403473B2

    公开(公告)日:2019-09-03

    申请号:US15198416

    申请日:2016-06-30

    IPC分类号: H01J37/32

    摘要: An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.