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    Fabricating low contact resistance conductive layer in semiconductor device
    1.
    发明授权
    Fabricating low contact resistance conductive layer in semiconductor device 有权
    在半导体器件中制造低接触电阻导电层

    公开(公告)号：US08367550B2

    公开(公告)日：2013-02-05

    申请号：US12978832

    申请日：2010-12-27

    申请人： Jong Bum Park ,  Chun Ho Kang ,  Young Seung Kim

    发明人： Jong Bum Park ,  Chun Ho Kang ,  Young Seung Kim

    IPC分类号： H01L21/44

    CPC分类号： H01L27/10888 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/28525 ,  H01L23/485 ,  H01L27/10855 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A conductive layer may be fabricated on a semiconductor substrate by loading a silicon substrate in to a chamber whose inside temperature is at a loading temperature in the range of approximately 250° C. to approximately 300° C., increasing the inside temperature of the chamber from the loading temperature to a process temperature, and sequentially stacking a single crystalline silicon layer and a polycrystalline silicon layer over the silicon substrate by supplying a silicon source gas and an impurity source gas in to the chamber, where the chamber may be, for example, a CVD chamber or a LPCVD chamber.

    摘要翻译： 导电层可以通过将硅衬底加载到内部温度处于约250℃至约300℃范围内的负载温度的室中而在半导体衬底上制造，从而增加室的内部温度 从加载温度到加工温度，并且通过将硅源气体和杂质源气体提供到室中，其中腔室可以是例如在硅衬底上顺序地堆叠单晶硅层和多晶硅层 ，CVD室或LPCVD室。

    Method for fabricating semiconductor device
    2.
    发明授权
    Method for fabricating semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07998825B2

    公开(公告)日：2011-08-16

    申请号：US12344154

    申请日：2008-12-24

    申请人： Han-Sang Song ,  Jong-Bum Park ,  Jong-Kook Park

    发明人： Han-Sang Song ,  Jong-Bum Park ,  Jong-Kook Park

    IPC分类号： H01L21/02

    CPC分类号： H01L21/76804 ,  H01L27/10852 ,  H01L28/90

    摘要： A method for fabricating a semiconductor device includes: forming an etch stop pattern over a conductive layer, the etch stop pattern having a first opening exposing a top surface of the conductive layer; forming an insulation layer over the etch stop pattern; selectively etching the insulation layer to form a second opening exposing the top surface of the conductive layer; and enlarging the second opening until the etch stop pattern is exposed.

    摘要翻译： 一种用于制造半导体器件的方法包括：在导电层上形成蚀刻停止图案，所述蚀刻停止图案具有暴露所述导电层顶表面的第一开口; 在所述蚀刻停止图案上形成绝缘层; 选择性地蚀刻绝缘层以形成暴露导电层的顶表面的第二开口; 并扩大第二个开口，直到蚀刻停止图案被曝光。

    FABRICATING LOW CONTACT RESISTANCE CONDUCTIVE LAYER IN SEMICONDUCTOR DEVICE
    3.
    发明申请
    FABRICATING LOW CONTACT RESISTANCE CONDUCTIVE LAYER IN SEMICONDUCTOR DEVICE 有权
    在半导体器件中制造低接触电阻导电层

    公开(公告)号：US20110159676A1

    公开(公告)日：2011-06-30

    申请号：US12978832

    申请日：2010-12-27

    申请人： Jong Bum PARK ,  Chun Ho KANG ,  Young Seung KIM

    发明人： Jong Bum PARK ,  Chun Ho KANG ,  Young Seung KIM

    IPC分类号： H01L21/30 ,  G06F19/00

    CPC分类号： H01L27/10888 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/28525 ,  H01L23/485 ,  H01L27/10855 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A conductive layer may be fabricated on a semiconductor substrate by loading a silicon substrate in to a chamber whose inside temperature is at a loading temperature in the range of approximately 250° C. to approximately 300° C., increasing the inside temperature of the chamber from the loading temperature to a process temperature, and sequentially stacking a single crystalline silicon layer and a polycrystalline silicon layer over the silicon substrate by supplying a silicon source gas and an impurity source gas in to the chamber, where the chamber may be, for example, a CVD chamber or a LPCVD chamber.

    摘要翻译： 导电层可以通过将硅衬底加载到内部温度处于约250℃至约300℃范围内的负载温度的室中而在半导体衬底上制造，从而增加室的内部温度 从加载温度到加工温度，并且通过将硅源气体和杂质源气体提供到室中，其中腔室可以是例如在硅衬底上顺序地堆叠单晶硅层和多晶硅层 ，CVD室或LPCVD室。

    METHOD FOR FORMING CAPACITOR IN A SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD FOR FORMING CAPACITOR IN A SEMICONDUCTOR DEVICE 审中-公开
    在半导体器件中形成电容器的方法

    公开(公告)号：US20090230511A1

    公开(公告)日：2009-09-17

    申请号：US12471917

    申请日：2009-05-26

    申请人： Jong Bum PARK

    发明人： Jong Bum PARK

    IPC分类号： H01L29/92 ,  H01L21/02

    CPC分类号： H01L21/0228 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/31691 ,  H01L28/55

    摘要： A method for forming a capacitor of a semiconductor device ensures charging capacity and improves leakage current characteristic. In the capacitor forming method, a semiconductor substrate formed with a storage node contact is prepared first. Next, a storage electrode is formed such that the storage electrode is connected to the storage node contact. Also, a dielectric film comprised of a composite dielectric of a SrTiO3 film and an anti-crystallization film is formed on the storage electrode. Finally, a plate electrode is formed on the dielectric film.

    摘要翻译： 用于形成半导体器件的电容器的方法确保充电容量并改善漏电流特性。 在电容器形成方法中，首先制备形成有存储节点接触的半导体衬底。 接下来，形成存储电极，使得存储电极连接到存储节点触点。 此外，在存储电极上形成由SrTiO 3膜的复合电介质和抗结晶膜构成的电介质膜。 最后，在电介质膜上形成平板电极。

    CAPACITOR AND METHOD FOR FABRICATING THE SAME
    5.
    发明申请
    CAPACITOR AND METHOD FOR FABRICATING THE SAME 有权
    电容器及其制造方法

    公开(公告)号：US20080224264A1

    公开(公告)日：2008-09-18

    申请号：US11967200

    申请日：2007-12-30

    申请人： Jong-Bum PARK

    发明人： Jong-Bum PARK

    IPC分类号： H01L21/283 ,  H01L29/92

    CPC分类号： H01G4/33 ,  H01G4/1263 ,  H01G4/20 ,  H01L28/91

    摘要： A capacitor includes a lower electrode, a first dielectric layer formed over the lower electrode, a second dielectric layer formed over the first dielectric layer, wherein the second dielectric layer includes an amorphous high-k dielectric material, a third dielectric layer formed over the second dielectric layer, and an upper electrode formed over the third dielectric layer.

    摘要翻译： 电容器包括下电极，形成在下电极上的第一电介质层，形成在第一电介质层上的第二电介质层，其中第二电介质层包括非晶高k电介质材料，第二介电层形成在第二电介质层上 电介质层和形成在第三介电层上的上电极。

    Method for fabricating capacitor in semiconductor device
    6.
    发明授权
    Method for fabricating capacitor in semiconductor device 失效
    在半导体器件中制造电容器的方法

    公开(公告)号：US06706607B2

    公开(公告)日：2004-03-16

    申请号：US10316874

    申请日：2002-12-12

    申请人： Jong-Bum Park ,  Hoon-Jung Oh ,  Kyong-Min Kim

    发明人： Jong-Bum Park ,  Hoon-Jung Oh ,  Kyong-Min Kim

    IPC分类号： H01L218242

    CPC分类号： H01L21/02178 ,  H01L21/022 ,  H01L21/02247 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31683 ,  H01L21/31691 ,  H01L28/56 ,  H01L28/90

    摘要： The present invention relates to a method for fabricating a capacitor in a semiconductor device; and, more particularly, to a method for fabricating a capacitor capable of stably forming a nitride layer on a lower electrode and obtaining improvements on stable capacitance and leakage current characteristics. The inventive method for fabricating a capacitor includes the steps of: forming a lower electrode on a substrate; forming a nitride-based first dielectric thin layer on the lower electrode; forming a second dielectric thin layer by depositing an Al2O3 layer on the nitride-based first dielectric thin layer; forming a third dielectric thin layer on the second dielectric thin layer; and forming an upper electrode on the third dielectric thin layer.

    摘要翻译： 本发明涉及一种用于制造半导体器件中的电容器的方法; 更具体地，涉及一种用于制造能够在下电极上稳定地形成氮化物层并且获得稳定的电容和漏电流特性的改进的电容器的方法。 本发明的制造电容器的方法包括以下步骤：在衬底上形成下电极; 在下电极上形成基于氮化物的第一电介质薄层; 通过在所述基于氮化物的第一电介质薄层上沉积Al 2 O 3层形成第二电介质薄层; 在所述第二电介质薄层上形成第三电介质薄层; 以及在所述第三电介质薄层上形成上电极。

    Variable swirl type GDI injector
    7.
    发明授权
    Variable swirl type GDI injector 失效
    可变涡流型GDI注射器

    公开(公告)号：US06676040B2

    公开(公告)日：2004-01-13

    申请号：US09989491

    申请日：2001-11-21

    申请人： Jong-Bum Park

    发明人： Jong-Bum Park

    IPC分类号： B05B134

    CPC分类号： F02M61/162 ,  F02M2200/29

    摘要： The present invention provides a GDI injector of a vehicle engine that can change the level of swirl motion and make it possible to increase engine output and fuel mileage, comprising a nozzle body having an opening along its longitudinal axis, a fuel inlet member, a cylindrically-shaped needle valve being centrally located within the opening of the nozzle body, and a swirl generator, the swirl generator comprising: an inner case having a cylindrically-shaped body and a plurality of equally and angularly spaced lobes, the inner case being coupled to the needle; an outer case having a cylindrically-shaped body and a plurality of equally and angularly spaced grooves, the outer case being fixedly attached to the nozzle body; and an inner case rotator.

    摘要翻译： 本发明提供一种车辆发动机的GDI喷射器，其能够改变涡旋运动的水平并且使得可以增加发动机输出和燃料里程，包括沿其纵向轴线具有开口的喷嘴体，燃料入口构件，圆柱形 形状的针阀位于喷嘴主体的开口内的中心位置，以及一个涡流发生器，该涡流发生器包括：内壳，其具有圆柱形主体和多个相等且有角度间隔的凸角，内壳联接到 针 外壳具有圆柱形主体和多个相等且有角度间隔开的凹槽，外壳固定地附接到喷嘴体; 和内壳旋转器。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20120007219A1

    公开(公告)日：2012-01-12

    申请号：US13240983

    申请日：2011-09-22

    申请人： Jong-Bum PARK ,  Han-Sang SONG ,  Jong-Kook PARK

    发明人： Jong-Bum PARK ,  Han-Sang SONG ,  Jong-Kook PARK

    IPC分类号： H01L29/41

    CPC分类号： H01L27/10855 ,  H01L21/7687 ,  H01L28/90

    摘要： A semiconductor device, includes: a first storage node contact plug penetrating a first interlayer insulation layer and partially protruding above the first interlayer insulation layer; a second storage node contact plug contacting the first storage node contact plug that protrudes above the first interlayer insulation layer; a storage node contacting a top surface of the second storage node contact plug; and a second interlayer insulation layer formed over the first interlayer insulation layer, wherein the second interlayer insulation layer surrounds an outer sidewall at a bottom region of the first storage node, and the second storage node contact plug, and wherein the first storage node contact plug protruding above the first interlayer insulation layer and the second storage node contact plug.

    摘要翻译： 一种半导体器件，包括：穿过第一层间绝缘层并部分地突出在第一层间绝缘层上方的第一存储节点接触插塞; 与所述第一存储节点接触插头接触的第二存储节点接触插塞，所述第一存储节点接触插头突出在所述第一层间绝缘层之上; 接触所述第二存储节点接触插塞的顶表面的存储节点; 以及形成在所述第一层间绝缘层上的第二层间绝缘层，其中所述第二层间绝缘层围绕所述第一存储节点的底部区域处的外侧壁和所述第二存储节点接触插塞，并且其中所述第一存储节点接触插塞 突出在第一层间绝缘层和第二存储节点接触插塞上方。