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    Deposition apparatus
    2.
    发明授权
    Deposition apparatus 有权
    沉积装置

    公开(公告)号：US08747948B2

    公开(公告)日：2014-06-10

    申请号：US13346470

    申请日：2012-01-09

    申请人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

    发明人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

    IPC分类号： C23C16/00

    CPC分类号： C23C16/40 ,  C23C16/4408 ,  C23C16/45519

    摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

    摘要翻译： 构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。 喷头板与基板支撑件一起限定反应空间。 该装置还包括一个或多个气体导管，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。 一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。 这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

    SEMICONDUCTOR INTEGRATED CIRCUIT HAVING VOLTAGE STABILIZING CIRCUIT
    3.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT HAVING VOLTAGE STABILIZING CIRCUIT 有权
    具有电压稳定电路的半导体集成电路

    公开(公告)号：US20130043925A1

    公开(公告)日：2013-02-21

    申请号：US13244169

    申请日：2011-09-23

    申请人： Jong Su KIM

    发明人： Jong Su KIM

    IPC分类号： H03L5/00

    CPC分类号： H03K5/08 ,  H01L27/0266

    摘要： A semiconductor integrated circuit includes a first voltage supply unit, a second voltage supply unit configured to supply a voltage with a level different from that of the first voltage supply unit, and a voltage stabilizing unit connected between the first and second voltage supply units, and including at least one discharge path that includes a clamping section configured to temporarily drop a level of a voltage introduced from the first or second voltage supply unit, and a discharge section configured to discharge the voltage having passed through the clamping section to the second or first voltage supply unit.

    摘要翻译： 半导体集成电路包括第一电压供给单元，被配置为提供与第一电压供应单元的电平不同的电压的第二电压供应单元，以及连接在第一和第二电压供应单元之间的稳压单元，以及 包括至少一个放电路径，其包括被配置为暂时降低从第一或第二电压供应单元引入的电压的电平的钳位部分，以及被配置为将已经穿过夹持部分的电压放电到第二或第一 电压供应单元。

    SEMICONDUCTOR DEVICE FOR PREVENTING PLASMA INDUCED DAMAGE AND LAYOUT THEREOF
    5.
    发明申请
    SEMICONDUCTOR DEVICE FOR PREVENTING PLASMA INDUCED DAMAGE AND LAYOUT THEREOF 有权
    用于防止等离子体诱导的损伤和布局的半导体器件

    公开(公告)号：US20120168870A1

    公开(公告)日：2012-07-05

    申请号：US13101617

    申请日：2011-05-05

    申请人： Jong-Su KIM

    发明人： Jong-Su KIM

    IPC分类号： H01L27/06 ,  H01L29/78

    CPC分类号： H01L27/0629

    摘要： A semiconductor device includes a diode having a first terminal connected to a first-conductivity-type well, and a second-conductivity-type MOS transistor having a first junction and a gate connected to a second terminal of the diode, and a second junction connected to a first power supply voltage terminal.

    摘要翻译： 半导体器件包括具有连接到第一导电型阱的第一端子的二极管和具有连接到二极管的第二端子的第一结和栅极的第二导电型MOS晶体管，以及连接到二极管的第二连接点 到第一电源电压端子。

    SEMICONDUCTOR MEMORY DEVICE HAVING A FLOATING BODY CAPACITOR, MEMORY CELL ARRAY HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE HAVING A FLOATING BODY CAPACITOR, MEMORY CELL ARRAY HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME 有权
    具有浮动体电容器的半导体存储器件，具有该浮动体电容器的存储器单元阵列及其制造方法

    公开(公告)号：US20120068239A1

    公开(公告)日：2012-03-22

    申请号：US13304470

    申请日：2011-11-25

    申请人： Jong Su KIM

    发明人： Jong Su KIM

    IPC分类号： H01L27/105 ,  H01L21/283 ,  H01L27/06

    CPC分类号： H01L29/7841 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/1203 ,  H01L29/78612

    摘要： A semiconductor memory device having a floating body capacitor. The semiconductor memory device can perform a memory operation using the floating body capacitor. The semiconductor memory device includes an SOI substrate having a staked structure in which a base substrate having a conducting surface, a buried insulating layer and a device-forming layer are staked, a transistor formed in a portion of the device-forming layer, having a gate, a source region and a drain region, and a capacitor formed by the buried insulating layer, the conducting surface of the base substrate, and accumulated holes generated in the device-forming layer when the transistor is driven.

    摘要翻译： 一种具有浮体电容器的半导体存储器件。 半导体存储器件可以使用浮体电容器执行存储器操作。 半导体存储器件包括：具有淀积结构的SOI衬底，其中具有导电表面的基底衬底，埋入绝缘层和器件形成层被淀积;晶体管，其形成在器件形成层的一部分中，具有 栅极，源极区和漏极区，以及由所述掩埋绝缘层形成的电容器，所述基底衬底的导电表面以及当所述晶体管被驱动时在所述器件形成层中产生的累积空穴。

    Deposition apparatus
    7.
    发明授权
    Deposition apparatus 有权
    沉积装置

    公开(公告)号：US08092606B2

    公开(公告)日：2012-01-10

    申请号：US12334135

    申请日：2008-12-12

    申请人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

    发明人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

    IPC分类号： C23C16/00 ,  H01L21/31

    CPC分类号： C23C16/40 ,  C23C16/4408 ,  C23C16/45519

    摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

    摘要翻译： 构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。 喷头板与基板支撑件一起限定反应空间。 该装置还包括一个或多个气体导管，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。 一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。 这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

    Seat-air conditioning system for automotive vehicles
    10.
    发明授权
    Seat-air conditioning system for automotive vehicles 有权
    汽车座椅空调系统

    公开(公告)号：US08950467B2

    公开(公告)日：2015-02-10

    申请号：US12797603

    申请日：2010-06-09

    申请人： Dae Woong Lee ,  Jong Su Kim ,  Soo-Yong Jin

    发明人： Dae Woong Lee ,  Jong Su Kim ,  Soo-Yong Jin

    IPC分类号： B60H1/00 ,  B60H3/00 ,  B60N2/56

    CPC分类号： B60N2/5628 ,  B60H1/00285 ,  B60H2001/003 ,  B60N2/5657 ,  Y10S454/907

    摘要： A seat air-conditioning system for automotive vehicles includes an air-conditioning unit for generating cold air or hot air, a driver seat including a seat portion provided with a plurality of air discharge holes through which to discharge the cold air or the hot air to the outside, a front passenger seat including a seat portion provided with a plurality of air discharge holes through which to discharge the cold air or the hot air to the outside, an outlet duct mounted to the air-conditioning unit for drawing the cold air or the hot air from the air-conditioning unit therethrough, a seat duct connected to the outlet duct for supplying the cold air or the hot air to the driver seat and the front passenger seat therethrough, and a seat blower attached to the outlet duct for blowing the cold air or the hot air at an increased flow rate.

    摘要翻译： 一种用于汽车的座椅空调系统包括用于产生冷空气或热空气的空调单元，驾驶员座椅，其包括座部，该座部设置有多个排气孔，通过该排气孔将冷空气或热空气排出到 外侧，前排乘客座椅，其包括设置有多个排气孔的座部，通过该排气孔将冷空气或热空气排出到外部，安装到空调单元的出口管，用于抽取冷空气或 来自空调单元的热空气，连接到出口管道的座管，用于将冷空气或热空气供应到驾驶员座椅和前乘客座椅，以及安装在出口管道上的吹风机的座鼓风机 冷空气或热空气以增加的流速。