Method of forming a metal pattern and method of manufacturing a display substrate including the metal pattern
    1.
    发明授权
    Method of forming a metal pattern and method of manufacturing a display substrate including the metal pattern 有权
    形成金属图案的方法和制造包括金属图案的显示基板的方法

    公开(公告)号:US08765614B2

    公开(公告)日:2014-07-01

    申请号:US13406388

    申请日:2012-02-27

    IPC分类号: H01L21/302

    摘要: A method of forming a metal pattern on a display substrate includes blanket depositing a copper-based layer having a thickness between about 1,500 Å and about 5,500 Å on a base substrate, and forming a patterned photoresist layer on the copper-based layer. The copper-based layer is over-etched by an etching composition containing an oxidizing moderating agent where the over-etch factor is between about 40% and about 200% while using the patterned photoresist layer as an etch stopping layer, and where the etching composition includes ammonium persulfate between about 0.1% by weight and about 50% by weight, includes an azole-based compound between about 0.01% by weight and about 5% by weight and a remainder of water. Thus, reliability of the metal pattern and that of manufacturing a display substrate may be improved.

    摘要翻译: 在显示基板上形成金属图案的方法包括:在基底基板上铺设厚度在约至约为500埃之间的铜基层,并在铜基层上形成图案化的光致抗蚀剂层。 通过含有氧化调节剂的蚀刻组合物对铜基层进行过蚀刻,其中过蚀刻因子在约40%至约200%之间,同时使用图案化的光致抗蚀剂层作为蚀刻停止层,并且其中蚀刻组合物 包括约0.1重量%至约50重量%的过硫酸铵,包括约0.01重量%至约5重量%的唑类化合物和剩余的水。 因此,可以提高金属图案的可靠性和制造显示基板的可靠性。

    METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL
    4.
    发明申请
    METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL 有权
    制造薄膜晶体管阵列的方法

    公开(公告)号:US20120135555A1

    公开(公告)日:2012-05-31

    申请号:US13157806

    申请日:2011-06-10

    IPC分类号: H01L33/62

    摘要: A method for manufacturing a thin film transistor array panel, including: sequentially forming a first silicon layer, a second silicon layer, a lower metal layer, and an upper metal layer on a gate insulating layer and a gate line; forming a first film pattern on the upper metal layer; forming a first lower metal pattern and a first upper metal pattern that includes a protrusion, by etching the upper metal layer and the lower metal layer; forming first and second silicon patterns by etching the first and second silicon layers; forming a second film pattern by ashing the first film pattern; forming a second upper metal pattern by etching the first upper metal pattern; forming a data line and a thin film transistor by etching the first lower metal pattern and the first and second silicon patterns; and forming a passivation layer and a pixel electrode on the resultant.

    摘要翻译: 一种制造薄膜晶体管阵列面板的方法,包括:在栅绝缘层和栅极线上依次形成第一硅层,第二硅层,下金属层和上金属层; 在上金属层上形成第一膜图案; 通过蚀刻上金属层和下金属层,形成第一下金属图案和包括突起的第一上金属图案; 通过蚀刻第一和第二硅层形成第一和第二硅图案; 通过灰化第一膜图案形成第二膜图案; 通过蚀刻第一上金属图案形成第二上金属图案; 通过蚀刻第一下金属图案和第一和第二硅图案来形成数据线和薄膜晶体管; 并在所得物上形成钝化层和像素电极。

    DISPLAY SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    DISPLAY SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME 有权
    显示基板,具有该基板的显示装置及其制造方法

    公开(公告)号:US20100182525A1

    公开(公告)日:2010-07-22

    申请号:US12487928

    申请日:2009-06-19

    IPC分类号: G02F1/136 H01L29/786

    摘要: A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.

    摘要翻译: 显示基板包括绝缘基板,薄膜晶体管,接触电极和像素电极。 薄膜晶体管包括控制电极,半导体图案,第一电极和第二电极。 控制电极在绝缘基板上。 半导体图案在控制电极上。 第一电极位于半导体图案上。 第二电极与半导体图案上的第一电极间隔开。 接触电极包括接触部分和底切部分。 接触部分电连接到第二电极以部分地暴露半导体图案。 底切部分电连接到接触部分以覆盖半导体图案。 像素电极通过接触电极的接触部分电连接到第二电极。