公开(公告)号：US08735932B2

公开(公告)日：2014-05-27

申请号：US13253515

申请日：2011-10-05

Applicant: Tae-hyung Kim ,  Cheol-soo Sone ,  Jong-in Yang ,  Sang-yeob Song ,  Si-hyuk Lee

Inventor： Tae-hyung Kim ,  Cheol-soo Sone ,  Jong-in Yang ,  Sang-yeob Song ,  Si-hyuk Lee

IPC: H01L33/36

CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

Abstract translation: LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并连接到各个化合物层的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 形成在另一个侧表面上的第二电极连接层连接到第二电极层。 通过在发光装置的相应侧表面上形成连接层，可以降低制造成本。

公开(公告)号：US20110008924A1

公开(公告)日：2011-01-13

申请号：US12885882

申请日：2010-09-20

Applicant: Jong In YANG ,  Yu Seung KIM ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Tae Hyung KIM

Inventor： Jong In YANG ,  Yu Seung KIM ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Tae Hyung KIM

IPC: H01L33/30

CPC classification number: H01L21/3086 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract translation: 提供了在III族氮化物半导体衬底上形成图案的方法。 根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

公开(公告)号：US20100090246A1

公开(公告)日：2010-04-15

申请号：US12328142

申请日：2008-12-04

Applicant: Jin Bock LEE ,  Jin Hyun Lee ,  Hee Seok Park ,  Pun Jae Choi ,  Jong In Yang

Inventor： Jin Bock LEE ,  Jin Hyun Lee ,  Hee Seok Park ,  Pun Jae Choi ,  Jong In Yang

IPC: H01L33/00 ,  H01L21/18

CPC classification number: H01L33/62 ,  H01L21/268 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

Abstract translation: 提供了包括第一电极的垂直氮化物基LED; 设置在所述第一电极上的第一氮化物半导体层; 设置在所述第一氮化物半导体层上的有源层; 设置在所述有源层上的第二氮化物半导体层; 设置在所述第二氮化物半导体层上的欧姆接触图案; 设置在所述欧姆接触图案上的第二电极; 以及与第二电极电连接并设置在第二氮化物半导体层上的接合焊盘。

公开(公告)号：US20090137075A1

公开(公告)日：2009-05-28

申请号：US12155277

申请日：2008-06-02

Applicant: Jong In Yang ,  Sang Bum Lee ,  Si Hyuk Lee ,  Tae Hyung Kim

Inventor： Jong In Yang ,  Sang Bum Lee ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/007 ,  H01L33/44

Abstract: Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.

Abstract translation: 提供一种制造垂直LED的方法，该方法包括以下步骤：制备蓝宝石衬底; 形成其中n型氮化物半导体层，有源层和p型氮化物半导体层依次层压在蓝宝石衬底上的发光结构; 在p型氮化物半导体层上形成p电极; 在p电极上形成结构支撑层; 通过LLO（激光剥离）工艺去除蓝宝石衬底; 通过ISO（隔离）工艺将发光结构隔离成单元LED元件; 以及在隔离的发光结构的n型氮化物半导体层的每一个上形成n电极。

公开(公告)号：US08901586B2

公开(公告)日：2014-12-02

申请号：US13181007

申请日：2011-07-12

Applicant: Hak Hwan Kim ,  Ho Sun Paek ,  Hyung Kun Kim ,  Sung Kyong Oh ,  Jong In Yang

Inventor： Hak Hwan Kim ,  Ho Sun Paek ,  Hyung Kun Kim ,  Sung Kyong Oh ,  Jong In Yang

IPC: H01L33/00 ,  H01L33/38

CPC classification number: H01L33/58 ,  H01L33/0095 ,  H01L33/382 ,  H01L33/385

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.

Abstract translation: 公开了一种发光器件及其制造方法。 发光装置包括：基板; 发光结构，其设置在所述基板上，并具有其中层叠有第一导电类型半导体层，有源层和第二导电类型半导体层的堆叠结构; 设置在所述发光结构上的透镜; 以及分别电连接到第一导电类型半导体层和第二导电类型半导体层的第一端子部分和第二端子部分。 第一和第二端子部分中的至少一个从发光结构的顶表面沿着发光结构和基板的相应侧表面延伸。

公开(公告)号：US08829548B2

公开(公告)日：2014-09-09

申请号：US13554026

申请日：2012-07-20

Applicant: Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

Inventor： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

IPC: H01L33/00

CPC classification number: H01L25/167 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

Abstract translation: 发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

公开(公告)号：US20130020598A1

公开(公告)日：2013-01-24

申请号：US13554026

申请日：2012-07-20

Applicant: Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

Inventor： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

IPC: H01L33/50 ,  H01L33/62

CPC classification number: H01L25/167 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

Abstract translation: 发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

公开(公告)号：US20130020554A1

公开(公告)日：2013-01-24

申请号：US13553998

申请日：2012-07-20

Applicant: Jong In YANG ,  Tae Hyung Kim ,  Young Chul Shin ,  Tae Hyun Lee ,  Sang Yeob Song ,  Tae Hun Kim

Inventor： Jong In YANG ,  Tae Hyung Kim ,  Young Chul Shin ,  Tae Hyun Lee ,  Sang Yeob Song ,  Tae Hun Kim

IPC: H01L27/15

CPC classification number: H01L27/15 ,  H01L33/382 ,  H01L2224/16245

Abstract: There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer.

Abstract translation: 提供了一种半导体发光器件和发光设备。 半导体发光器件包括：发光二极管（LED）部，其设置在透光基板的一个区域上，并且包括第一导电型半导体层，有源层和第二导电型半导体层; 以及齐纳二极管部，其设置在所述透光性基板的另一区域上，并且包括第一导电型半导体层，有源层和第二导电型半导体层。

公开(公告)号：US08110424B2

公开(公告)日：2012-02-07

申请号：US12419590

申请日：2009-04-07

Applicant: Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

Inventor： Jong In Yang ,  Sang Bum Lee ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC: H01L21/00

CPC classification number: H01L21/268 ,  H01L33/0062 ,  H01L33/16

Abstract: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

Abstract translation: 提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

公开(公告)号：US08110417B2

公开(公告)日：2012-02-07

申请号：US12885882

申请日：2010-09-20

Applicant: Jong In Yang ,  Yu Seung Kim ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

Inventor： Jong In Yang ,  Yu Seung Kim ,  Sang Yeob Song ,  Si Hyuk Lee ,  Tae Hyung Kim

IPC: H01L21/00

CPC classification number: H01L21/3086 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract translation: 提供了在III族氮化物半导体衬底上形成图案的方法。 根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。