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    Antireflective compositions for photoresists
    2.
    发明授权
    Antireflective compositions for photoresists 有权
    用于光致抗蚀剂的抗反射组合物

    公开(公告)号：US07264913B2

    公开(公告)日：2007-09-04

    申请号：US10301462

    申请日：2002-11-21

    Applicant: Hengpeng Wu ,  Shuji Ding-Lee ,  Zhong Xiang ,  Joseph E. Oberlander ,  Mark O. Neisser ,  Eleazar Gonzalez ,  Jainhui Shan

    Inventor： Hengpeng Wu ,  Shuji Ding-Lee ,  Zhong Xiang ,  Joseph E. Oberlander ,  Mark O. Neisser ,  Eleazar Gonzalez ,  Jainhui Shan

    IPC: G03C1/825 ,  G03C1/74 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

    CPC classification number: G03F7/091 ,  G03F7/038 ,  G03F7/0382 ,  Y10S430/109 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122

    Abstract: The present invention relates to a novel antireflective coating composition comprising a polymer, a crosslinking agent and an acid generator. The present invention further relates to a process for using the novel composition, particularly at 193 nm. The polymer of the present invention contains at least one unit selected from structures 1, 2 and 3, where, Y is a hydrocarbyl linking group of 1 to about 10 carbon atoms, R, R1, R′ and R″ are independently hydrogen, hydrocarbyl group of 1 to about 10 carbon atoms, halogen, —O(CO)Z, —C(CF3)2Z, —C(CF3)2(CO)OZ, —SO2CF3, —(CO)OZ, —SO3Z, —COZ, —OZ, —NZ2, —SZ, —SO2Z, —NHCOZ, —NZCOZ or —SO2NZ2, where Z is H or a hydrocarbyl group of 1 to about 10 carbon atoms, n=1–4, X is O, CO, S, COO, CH2O, CH2COO, SO2, NH, NL, OWO, OW, W, and where L and W are independently hydrocarbyl groups of 1 to about 10 carbon atoms, and m=0–3.

    Abstract translation: 本发明涉及包含聚合物，交联剂和酸发生剂的新型抗反射涂料组合物。 本发明还涉及使用该组合物的方法，特别是在193nm。 本发明的聚合物含有至少一种选自结构1,2和3的单元，其中Y是1至约10个碳原子的烃基连接基团，R 1，R 1，R' 和R“独立地为氢，1至约10个碳原子的烃基，卤素，-O（CO）Z，-C（CF 3）2 Z， -C（CF 3）2（CO）OZ，-SO 2 CF 3 - ， - （CO） OZ，-SO 3 Z，-COZ，-OZ，-NZ 2，-SZ，-SO 2 Z，-NHCOZ， - NZCOZ或-SO 2 NZ 2，其中Z为H或1至约10个碳原子的烃基，n = 1-4，X为O，CO， S，COO，CH 2 O，CH 2 COO，SO 2，NH，NL，OWO，OW，W，其中L和 W独立地为1至约10个碳原子的烃基，并且m = 0-3。

    Positive photoresist containing dyes
    3.
    发明授权
    Positive photoresist containing dyes 失效
    含正光致抗蚀剂的染料

    公开(公告)号：US5225312A

    公开(公告)日：1993-07-06

    申请号：US739646

    申请日：1991-08-02

    Applicant: Sunit S. Dixit ,  Richard M. Lazarus ,  Thomas P. Carter ,  Joseph E. Oberlander ,  Andreas Goehring ,  Randall W. Kautz ,  Grieg Beltramo

    Inventor： Sunit S. Dixit ,  Richard M. Lazarus ,  Thomas P. Carter ,  Joseph E. Oberlander ,  Andreas Goehring ,  Randall W. Kautz ,  Grieg Beltramo

    IPC: G03F7/09

    CPC classification number: G03F7/091

    Abstract: A positive photoresist of the type containing an alkali-soluble novolac resin and a quinone diazide sensitizer contains a dye of the general formula: ##STR1## wherein R' is lower alkyl, R" is H, alkyl or CO.sub.2 -alkyl, alkyl-CO.sub.2 -alkyl or alkyl-CO.sub.2 -(C.sub.1 -C.sub.3 alkyl-O).sub.n -alkyl (n=1-3) and wherein said dye is compatible with the novolac resin/quinone diazide formulation to at least 0.1 phr. The dye reduces reflective notching. Preferably the photoresist also contain a nitro naphthol dye to reduce the effects of I-Line radiation.

    Abstract translation: 含有碱溶性酚醛清漆树脂和醌二叠氮化物敏化剂的正型光致抗蚀剂含有下列通式的染料：其中R'为低级烷基，R“为H，烷基或CO 2 - 烷基，烷基 - CO 2 - 烷基或烷基-CO 2 - （C 1 -C 3烷基-O）n-烷基（n = 1-3），并且其中所述染料与酚醛清漆树脂/醌二叠氮化合物配方相容至至少0.1phr。 染料减少反光缝。 优选地，光致抗蚀剂还含有硝基萘酚染料以减少I-Line辐射的影响。

    Edge bead remover for thick film photoresists
    5.
    发明授权
    Edge bead remover for thick film photoresists 有权
    用于厚膜光刻胶的边缘珠去除器

    公开(公告)号：US06524775B1

    公开(公告)日：2003-02-25

    申请号：US09693215

    申请日：2000-10-20

    Applicant: Joseph E. Oberlander ,  Craig Traynor ,  Ernesto S. Sison ,  Jeff Griffin

    Inventor： Joseph E. Oberlander ,  Craig Traynor ,  Ernesto S. Sison ,  Jeff Griffin

    IPC: G03F716

    CPC classification number: G03F7/162

    Abstract: An edge bead remover for a photoresist composition disposed as a film on a surface, consisting essentially of a solvent mixture comprising from about 50 to about 80 parts by weight, based on the weight of the solvent mixture, of at least one di(C1-C3)alkyl carbonate and from about 20 to about 50 parts by weight, based on the weight of the solvent mixture, of cyclopentanone. A method is also provided for treating a photoresist composition film disposed on a surface which method comprises contacting the photoresist composition with a solvent mixture, in an amount sufficient to produce a substantially uniform film thickness of the photoresist composition across the surface, wherein the solvent mixture comprises from about 50 to about 80 parts by weight, based on the weight of the solvent mixture, of at least one di(C1-C3)alkyl carbonate and from about 20 to about 50 parts by weight, based on the weight of the solvent mixture, of cyclopentanone.

    Abstract translation: 一种用于光刻胶组合物的边缘珠去除剂，其以表面的薄膜的形式设置，其基本上由溶剂混合物组成，所述溶剂混合物包含基于溶剂混合物的重量约50至约80份重量的至少一种二（C1- C3）烷基碳酸酯和约20至约50重量份的基于溶剂混合物的重量的环戊酮。 还提供了一种处理设置在表面上的光致抗蚀剂组合物膜的方法，该方法包括使光致抗蚀剂组合物与溶剂混合物接触，其量足以在整个表面上产生基本上均匀的光致抗蚀剂组合物的膜厚度，其中溶剂混合物 基于溶剂混合物的重量，包含约50至约80重量份的至少一种碳酸二（C 1 -C 3）烷基酯和约20至约50重量份，基于溶剂的重量 混合物，环戊酮。

    Positive photoresists containing novel photoactive compounds
    6.
    发明授权
    Positive photoresists containing novel photoactive compounds 失效
    含有新型光活性化合物的正性光致抗蚀剂

    公开(公告)号：US5876897A

    公开(公告)日：1999-03-02

    申请号：US812542

    申请日：1997-03-07

    Applicant: Dana L. Durham ,  Ping-Hung Lu ,  Joseph E. Oberlander ,  Dinesh N. Khanna

    Inventor： Dana L. Durham ,  Ping-Hung Lu ,  Joseph E. Oberlander ,  Dinesh N. Khanna

    IPC: C08K5/00 ,  C08L61/06 ,  C08L101/12 ,  G03F7/004 ,  G03F7/022 ,  G03F7/039 ,  H01L21/027 ,  G03F7/023 ,  G03F7/30

    CPC classification number: G03F7/0045 ,  G03F7/022

    Abstract: A light sensitive positive composition comprising an alkali soluble resin, a novel photoactive compound represented by the structure ##STR1## where, X is O, S or N--R', where R' is H, alkyl, substituted alkyl, aryl or aralkyl,Y is a connecting group such as SO.sub.2, CO, O or NR',Z is a carbon containing organic ballast moiety having a molecular weight greater than about 75 and can form a bond with the connecting group,R is independently H, alkyl, alkoxy, aryl, aralkyl, halo or fluoroalkyl,m=1-3, and n.gtoreq.1;and a solvent or mixture of solvents. The invention further comprises a process for imaging the composition of this invention to give positive image. The light sensitive composition is especially useful as a positive deep-uv photoresist.

    Abstract translation: 一种光敏正性组合物，其包含碱溶性树脂，由结构表示的新型光敏化合物，其中X为O，S或N-R'，其中R'为H，烷基，取代的烷基，芳基或芳烷基， Y是连接基团，例如SO 2，CO，O或NR'，Z是分子量大于约75的含碳有机镇流器部分，可与连接基团形成键，R独立地为H，烷基，烷氧基 ，芳基，芳烷基，卤代或氟烷基，m = 1-3，n≥1; 和溶剂或溶剂混合物。 本发明还包括用于对本发明的组合物进行成像以给出正像的方法。 光敏组合物特别适用于正深紫外光致抗蚀剂。

    Photosensitive quinolone compounds and a process of preparation
    7.
    发明授权
    Photosensitive quinolone compounds and a process of preparation 失效
    光敏喹诺酮类化合物及其制备方法

    公开(公告)号：US5866295A

    公开(公告)日：1999-02-02

    申请号：US813167

    申请日：1997-03-07

    Applicant: Joseph E. Oberlander ,  Dana L. Durham ,  Dinesh N. Khanna

    Inventor： Joseph E. Oberlander ,  Dana L. Durham ,  Dinesh N. Khanna

    IPC: C07D215/38 ,  G03F7/022 ,  G03C1/52 ,  C08G59/00

    CPC classification number: C07D215/38 ,  G03F7/022

    Abstract: The present invention relates to novel photosensitive quinolone compounds, specifically novel 3-diazo 2,4-quinolinedione compounds, that may be used in a variety of applications, such as, photosensitive coating compositions, pharmaceuticals, agricultural, amongst others. The invention further relates to a process for making the novel photosensitive 3-diazo 2,4-quinolinedione compounds. These compounds are particularity useful as a photoactive component in a positive working photoresist composition, particularity for use as a deep ultraviolet (UV) photoresist.

    Abstract translation: 本发明涉及可用于各种应用的新型光敏喹诺酮化合物，特别是新颖的3-重氮2,4-喹啉二酮化合物，例如光敏涂料组合物，药物，农业等。 本发明还涉及一种制备新的光敏3-重氮2,4-喹啉二酮化合物的方法。 这些化合物是特别用作正性光致抗蚀剂组合物中的光活性组分，特别用作深紫外（UV）光致抗蚀剂。

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