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公开(公告)号：US07924599B1
公开(公告)日：2011-04-12
申请号：US07443018
申请日：1989-11-29
CPC分类号： G11C11/22 , G11C11/5657
摘要： A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage elements are read by use of a sense amplifier in a configuration which automatically restores the original data states, thereby eliminating the need for a subsequent restore operation. Memory systems are described which include circuitry for driving bit lines, word lines and drive lines to accomplish both the write and read operations.
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公开(公告)号：US06505137B1
公开(公告)日：2003-01-07
申请号：US09399130
申请日：1999-09-20
IPC分类号： G06F1900
CPC分类号： G06F11/26
摘要： A method for operating a data processing system to control a device under test and to collect data from that device. The user is provided with a first display having a list of elementary tasks having first and second tasks from which a user selects one or more elementary tasks. The first task applies a signal to the device under test when that task is executed and the second task causes the data processing system to receive data from the device under test. The user edits task parameters using a second display to provide a current test definition. In response to user input, the data processing system executes each of the tasks in the current test definition and stores any data received from the device under test in a data set that includes the current test definition and which is displayed in a third display.
摘要翻译： 一种用于操作数据处理系统以控制被测设备并从该设备收集数据的方法。 用户被提供有第一显示器，其具有具有用户选择一个或多个基本任务的第一和第二任务的基本任务的列表。 第一个任务在执行任务时将信号应用于被测设备，第二个任务使数据处理系统从被测设备接收数据。 用户使用第二显示器编辑任务参数以提供当前的测试定义。 响应于用户输入，数据处理系统执行当前测试定义中的每个任务，并将从被测设备接收的任何数据存储在包括当前测试定义并显示在第三显示器中的数据集中。
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3.发明授权Method for constructing ferroelectric based capacitor for use in memory systems 失效用于存储系统中使用的铁电电容器的方法
公开(公告)号：US6117688A
公开(公告)日：2000-09-12
申请号：US75011
申请日：1998-05-08
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/92 , H01L21/8242 , H01G7/06
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of a FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.
摘要翻译： 一种铁电体电容器结构及其制造方法。 电容器包括具有与第一欧姆材料层接触的Pt层的底部电极。 电容器电介质由掺杂有大于+4的氧化态的元素的钛酸铅锆层构成。 电容器的顶部电极由与Pt层接触的第二层欧姆材料构成。 优选的欧姆材料是LSCO; 尽管也可以使用RuO 2。 电容器优选地构造在FET的漏极上，使得电容器的底部电极连接到FET的漏极。 所得到的电容器结构具有低压印和低疲劳。
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4.发明授权
公开(公告)号：US6066868A
公开(公告)日：2000-05-23
申请号：US282309
申请日：1999-03-31
申请人： Joseph T. Evans, Jr.
发明人： Joseph T. Evans, Jr.
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/51 , H01L29/76
CPC分类号： H01L27/11502 , G11C11/221 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L29/516
摘要： A ferroelectric memory cell for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400.degree. C. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer. The memory also includes a hydrogen barrier layer that inhibits the flow of oxygen to the top and bottom electrodes when the memory cell is placed in a gaseous environment containing hydrogen. In one embodiment of the invention, a hydrogen absorbing layer is included. In the preferred embodiment of the present invention, the hydrogen barrier layer is constructed from a material that will also bind hydrogen ions.
摘要翻译： 用于存储信息的铁电存储单元。 通过设定残留极化的方向，将信息存储在铁电介质层的剩余极化中。 铁电存储器单元被设计成在小于第一温度的温度下存储信息。 存储单元包括夹住介电层的顶部和底部触点，其包括具有大于第一温度且小于400℃的居里点的铁电材料。电介质层被封装在不透氧材料中，使得封装层防止 氧气进入或离开电介质层。 存储器还包括当将存储单元放置在含有氢气的气体环境中时，阻止氧气流向顶部和底部电极的氢气阻挡层。 在本发明的一个实施方案中，包括吸氢层。 在本发明的优选实施方案中，氢阻挡层由也会结合氢离子的材料构成。
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公开(公告)号：US5963466A
公开(公告)日：1999-10-05
申请号：US059606
申请日：1998-04-13
申请人： Joseph T. Evans, Jr.
发明人： Joseph T. Evans, Jr.
IPC分类号： G11C11/22 , H01L21/02 , H01L27/115 , H01L29/92 , H01L29/76
CPC分类号： H01L27/11502 , G11C11/22 , H01L28/40
摘要： A memory for storing a plurality of words of data. The memory is constructed from one or more storage blocks. Each storage block includes a plurality of storage words, each storage word storing one of the words of data. Each storage word includes a plurality of single bit storage cells. The single bit storage cells include a ferroelectric capacitor and a pass transistor having a gate, source, and drain. The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode, the layer of ferroelectric material being sandwiched between the top and bottom electrodes. One bit of data is stored in the direction of polarization of the ferroelectric material in contact with the bottom electrode. The bottom electrode is connected to the source of the pass transistor. The top electrode of each single bit storage cell is part of a continuous conducting layer covering all of the ferroelectric capacitors in the storage block. Similarly, the ferroelectric layer is part of a continuous layer of ferroelectric material that is shared by all of the ferroelectric capacitors in the storage block.
摘要翻译： 用于存储多个数据字的存储器。 存储器由一个或多个存储块构成。 每个存储块包括多个存储字，每个存储字存储数据字中的一个。 每个存储字包括多个单位存储单元。 单位存储单元包括铁电电容器和具有栅极，源极和漏极的通过晶体管。 铁电电容器包括底电极，铁电体材料层和顶电极，铁电体层被夹在顶电极和底电极之间。 将一位数据存储在与底部电极接触的铁电材料的极化方向上。 底部电极连接到传输晶体管的源极。 每个单位存储单元的顶电极是覆盖存储块中的所有铁电电容器的连续导电层的一部分。 类似地，铁电层是由存储块中的所有铁电电容器共享的铁电材料的连续层的一部分。
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6.发明授权
公开(公告)号：US5757042A
公开(公告)日：1998-05-26
申请号：US663675
申请日：1996-06-14
IPC分类号： G11C11/22 , H01L27/115 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L27/11502 , G11C11/22 , H01L29/78391
摘要： A memory based on a ferroelectric FET, the ferroelectric FET includes a gate electrode, a layer of ferroelectric material, layer of semiconducting material, a source electrode and a drain electrode. The layer of ferroelectric material is sandwiched between the gate electrode and the layer of semiconducting material, the source and drain electrodes being in contact with the layer of semiconducting material and spaced apart from one another. The memory includes a circuit for setting the ferroelectric FET to one of two states. The first state is set by applying a first voltage to the source and drain electrodes and a second voltage to the gate electrode. The second state is set by applying a third voltage to the gate and drain electrodes and fourth voltage to the source electrode. This arrangement reduces the number of pass transistors needed per ferroelectric FET to one plus a simple pulsing circuit that must be included with each word of memory.
摘要翻译： 基于铁电FET的存储器，铁电FET包括栅电极，铁电材料层，半导体材料层，源电极和漏电极。 铁电材料层夹在栅电极和半导体材料层之间，源电极和漏电极与半导体材料层接触并彼此间隔开。 存储器包括用于将铁电FET设置为两种状态之一的电路。 通过向源极和漏极施加第一电压并将第二电压施加到栅电极来设定第一状态。 通过向栅极和漏极施加第三电压并将第四电压施加到源电极来设定第二状态。 这种布置将每个铁电FET所需的通过晶体管的数量减少到一个必须包含在每个字存储器中的简单脉冲电路。
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7.发明授权High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same 失效用于与陶瓷材料接触的高温电接触和使用其的改进的电路元件
公开(公告)号：US5440173A
公开(公告)日：1995-08-08
申请号：US123289
申请日：1993-09-17
IPC分类号： H01L21/02 , H01L27/115 , H01L29/43
CPC分类号： H01L27/11502 , H01L28/60 , H01L28/55 , H01L28/75 , Y10S257/915
摘要： A method for connecting a silicon substrate to an electrical component via a platinum conductor. The resulting structure may be heated in the presence of oxygen to temperatures in excess of 800.degree. C. without destroying the electrical connection between the silicon substrate and components connected to the platinum conductor. The present invention utilizes a TiN or TiW buffer layer to connect the platinum conductor to the silicon substrate. The buffer layer is deposited as a single crystal on the silicon substrate. The platinum layer is then deposited on the buffer layer. The region of the platinum layer in contact with the buffer layer is also a single crystal.
摘要翻译： 一种通过铂导体将硅衬底连接到电气部件的方法。 所得到的结构可以在氧的存在下加热到超过800℃的温度，而不会破坏硅衬底和连接到铂导体的组件之间的电连接。 本发明利用TiN或TiW缓冲层将铂导体连接到硅衬底。 缓冲层作为单晶沉积在硅衬底上。 然后将铂层沉积在缓冲层上。 与缓冲层接触的铂层的区域也是单晶。
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公开(公告)号：US5232747A
公开(公告)日：1993-08-03
申请号：US920258
申请日：1992-07-27
申请人： Joseph T. Evans, Jr.
发明人： Joseph T. Evans, Jr.
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L21/76838 , H01L23/53242 , H01L2924/0002
摘要： An improved method for making aluminum connections to platinum electrodes is described. The method utilizes an oxide layer to isolate the aluminum from the platinum. The oxide layer is created by ashing the surface of the platinum using an Oxygen plasma.
摘要翻译： 描述了一种用于制造与铂电极的铝连接的改进方法。 该方法利用氧化物层将铝与铂隔离。 氧化层是通过使用氧等离子体使铂的表面灰化而产生的。
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9.发明授权Platinum electrode structure for use in conjunction with ferroelectric materials 失效用于与铁电材料结合使用的铂电极结构
公开(公告)号：US5164808A
公开(公告)日：1992-11-17
申请号：US738897
申请日：1991-08-09
IPC分类号： H01L21/02 , H01L27/115
CPC分类号： H01L27/11502 , H01L28/60
摘要： An improved ferroelectric structure and the method for making the same is disclosed. The improved structure reduces the fatigue problems encountered in ferroelectric capacitors while providing avoiding problems in depositing the ferroelectric material which have prevented other solutions to the fatigue problem from being effective. The improved ferroelectric structure also provides improved adhesion to the underlying substrate. The ferroelectric structure has a bottom electrode comprising a layer of PtO.sub.2 which is generated by depositing a layer of Platinum on a suitable substrate and then exposing the Platinum layer to an Oxygen plasma. The ferroelectric material is then deposited on the PtO.sub.2 layer.
摘要翻译： 公开了一种改进的铁电结构及其制造方法。 改进的结构减少了在铁电电容器中遇到的疲劳问题，同时避免了沉积铁电材料的问题，这阻碍了其他解决方案对疲劳问题的有效性。 改进的铁电结构还提供改进的与底层基底的粘合性。 铁电体结构具有包括PtO 2层的底部电极，其通过在合适的衬底上沉积铂层并随后将铂层暴露于氧等离子体而产生。 然后将铁电材料沉积在PtO 2层上。
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10.发明授权
公开(公告)号：US5119329A
公开(公告)日：1992-06-02
申请号：US699491
申请日：1991-05-13
IPC分类号： H01L21/8247 , G11C11/22 , H01L21/8246 , H01L27/105 , H01L29/788 , H01L29/792
CPC分类号： G11C11/22
摘要： An improved memory device based on a non-volatile variable resistance element is disclosed. The resistive element is based on a semiconductor having a resistivity which is determined by the state of polarization of a ferro-electric layer. The semiconductor forms one plate of a parallel plate capacitor having a dielectric comprising the ferro-electric layer. The state of the memory device is determined by measuring the resistivity of the semiconductor layer between two contacts on the semiconductor layer. The state of polarization of the ferro-electric layer is altered by applying a voltage between one of these contacts and the other plate of the capacitor.
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