公开(公告)号：US06436303B1

公开(公告)日：2002-08-20

申请号：US09359148

申请日：1999-07-21

申请人： Bok Heon Kim ,  Nam Le ,  Joseph V. D'Souza ,  Ashish Shrotriya

发明人： Bok Heon Kim ,  Nam Le ,  Joseph V. D'Souza ,  Ashish Shrotriya

IPC分类号： H01L2100

CPC分类号： H01L21/67069 ,  C23C16/0245 ,  C23C16/4581 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/14 ,  C30B33/00 ,  C30B33/12 ,  H01L21/31116

摘要： A method and device for removing film from a substrate are provided that take advantage of a remote plasma source to etch away undesired portions of films, such as dielectric films formed on a substrate. To that end, the method includes forming a plasma remotely with respect to the process chamber, from which a flow is created that is directed toward the substrate. The substrate is of a type having opposed major surfaces with a peripheral surface extending therebetween. A film, such as a dielectric film, is disposed on one of the opposed major surfaces and on the peripheral surface. The opposed major surface having the film thereon is shielded from the flow of reactive radicals while the peripheral surface is left exposed. In this fashion, the flow is maintained for a sufficient amount of time to remove film present on the peripheral surface.

摘要翻译： 提供了从基板去除膜的方法和装置，其利用远程等离子体源来蚀刻诸如形成在基板上的电介质膜等不期望的部分的膜。 为此，该方法包括相对于处理室远程形成等离子体，产生朝向衬底的流动。 衬底是具有相对的主表面的类型，其周边表面在它们之间延伸。 诸如电介质膜的膜被设置在相对的主表面之一和外围表面上的一个上。 当其周围表面露出时，具有其上的膜的相对的主表面与反应性基团的流动被屏蔽。 以这种方式，保持流动足够的时间以除去存在于外围表面上的膜。