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    Apparatus for plasma treatment of fine grained materials
    2.
    发明授权
    Apparatus for plasma treatment of fine grained materials 失效
    用于等离子体处理细粒材料的装置

    公开(公告)号：US5670065A

    公开(公告)日：1997-09-23

    申请号：US498437

    申请日：1995-07-05

    申请人： Herrmann Bickmann ,  Klaus Nauenburg ,  Juergen Weichart

    发明人： Herrmann Bickmann ,  Klaus Nauenburg ,  Juergen Weichart

    IPC分类号： B01J19/08 ,  B01J19/12 ,  B01J19/20 ,  B01J19/28 ,  H05H1/42 ,  B23K10/00

    CPC分类号： H01J37/32743 ,  B01J19/08 ,  B01J19/12 ,  B01J19/20 ,  B01J19/28 ,  H01J37/32752 ,  H05H1/42 ,  B01J2219/0894 ,  B01J2219/182 ,  B01J2219/187

    摘要： "An apparatus for plasma treating fine-grained materials, having a receptacle that can be evacuated and that accepts and agitates the materials to be treated, and having an electromagnetic device that comprises an excitation device and electrodes and to activate a process gas filling the space of the receptacle means to form a plasma, wherein the receptacle has a conveyor which conveys the material from one end to another end and is configured for continuous admission and discharge of the material and admission and discharge of the process gas, but that is otherwise hermetically closed, and at which or in which the electromagnetic excitation device that effects the plasma formation within the conveyor is arranged."

    摘要翻译： “一种用于等离子体处理细粒材料的装置，具有能够抽真空的容器并且接收和搅动待处理的材料，并具有包括激发装置和电极的电磁装置，并激活填充空间的工艺气体 的容器意味着形成等离子体，其中容器具有将材料从一端传送到另一端的输送机，并且被配置为连续地进入和排出材料以及进入和排出处理气体，但是否则气密地 关闭，并且布置有在输送机内实现等离子体形成的电磁激励装置。

    REACTIVE SPUTTERING WITH HIPIMS
    4.
    发明申请
    REACTIVE SPUTTERING WITH HIPIMS 审中-公开
    反应溅射与HIPIMS

    公开(公告)号：US20090173622A1

    公开(公告)日：2009-07-09

    申请号：US12329064

    申请日：2008-12-05

    申请人： Juergen Weichart ,  Stanislav Kadlec ,  Mohamed Elghazzali

    发明人： Juergen Weichart ,  Stanislav Kadlec ,  Mohamed Elghazzali

    IPC分类号： C23C14/35

    CPC分类号： H01J37/3408 ,  C23C14/0036 ,  C23C14/0094 ,  C23C14/046 ,  H01J37/3405 ,  H01J37/3467

    摘要： A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio is provided. A target formed at least in part from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to at least partially contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can optionally be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode.

    摘要翻译： 提供了一种用于将绝缘层溅射沉积到形成在衬底中并且具有高纵横比的空腔的表面上的方法和装置。 至少部分地由要包括在绝缘层和基板中的材料形成的靶设置在由壳体限定的基本封闭的腔室中。 等离子体在基本封闭的室内点燃，并且邻近靶的表面提供磁场以至少部分地包含邻近靶的表面的等离子体。 电压迅速升高以在阴极和阳极之间反复建立大功率的电脉冲。 电脉冲的平均功率为至少0.1kW，并且可以可选地大得多。 控制溅射沉积的操作参数以促进绝缘层在金属模式和反应模式之间的过渡模式中的溅射沉积。

    HF-Plasma coating chamber or PECVD coating chamber, its use and method of plating CDs using the chamber
    5.
    发明授权
    HF-Plasma coating chamber or PECVD coating chamber, its use and method of plating CDs using the chamber 有权

    公开(公告)号：US06432492B1

    公开(公告)日：2002-08-13

    申请号：US09091004

    申请日：1998-11-13

    申请人： Juergen Weichart

    发明人： Juergen Weichart

    IPC分类号： H05H124

    摘要： An Rf plasma enhanced chemical vapor deposition (PECVD) coating chamber for coating a planar dielectric substrate with a metallic layer or a plane dielectric substrate covered with a metallic layer. A reaction space is provided within the chamber and is confined between at least a flat metallic first electrode surface of a first electrode, and a second electrode surface. A substrate holder arrangement holds a substrate flat onto the first electrode surface and completely covers the first electrode with the first electrode surface towards the reaction space. The first and second electrode surface are connected to a source of Rf power. A dielectric substrate is coated with a metallic layer or a dielectric substrate covered with a metallic layer by an Rf-PECVD coating process. The substrate is deposited on a first electrode surface within a coating chamber, thereby completely covering the electrode surface by the dielectric substrate. Rf energy is coupled into the vacuum chamber exclusively via electrode surface and the dielectric substrate and a second electrode surface in the chamber.

    Target, magnetron source with said target and process for producing said target
    7.
    发明授权
    Target, magnetron source with said target and process for producing said target 有权
    目标，具有所述目标的磁控管源和用于产生所述目标的过程

    公开(公告)号：US06312574B1

    公开(公告)日：2001-11-06

    申请号：US09157408

    申请日：1998-09-21

    申请人： Hans Quaderer ,  Juergen Weichart

    发明人： Hans Quaderer ,  Juergen Weichart

    IPC分类号： C23C1435

    CPC分类号： H01J37/3426 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3405

    摘要： A ferromagnetic magnetron target contains a pattern of blind holes with a circular cross-section distributed along a sputtering surface thereof. A process produces the target for a given magnetron source with a given tunnel field and includes determining and storing the tunnel field course when individual blind holes are provided in a new target surface, additively superimposing the determined tunnel field course of plural individual blind holes, comparing the resulting tunnel field course with a DESIRED tunnel field course; and changing, as a function of the comparison result, the relative parameter position of one or more of the individual blind holes, or the like to control the working of blind holes into the plane target sputtering surface. An arrangement produces a target from a ferromagnetic material for a given magnetron source with a given tunnel field, with a course addition unit which is operatively connected on the input side of the input unit and which, on the output side, leads to one input of a course comparison unit, at whose second input a desired course can be fed and whose output feeds back to the adjusting inputs at the input unit. The adjusting inputs are operatively connected with an output for the triggering of a blind hole production device for the target.

    摘要翻译： 铁磁磁控管靶包含沿其溅射表面分布的具有圆形横截面的盲孔的图案。 一个过程利用给定的隧道场产生给定磁控管源的目标，并且包括当在新目标表面中提供各个盲孔时确定和存储隧道场过程，相加地叠加多个单个盲孔的确定的隧道场过程，比较 所产生的隧道现场课程具有DESIRED隧道场课程; 并且根据比较结果改变一个或多个单个盲孔等的相对参数位置，以控制盲孔进入平面靶溅射表面的工作。 一种布置从具有给定隧道场的给定磁控管源的铁磁材料产生目标，其中一个加法单元可操作地连接在输入单元的输入侧上，并且在输出侧通向一个输入端 课程比较单元，其第二输入端可以馈送期望的路线，并且其输出反馈到输入单元处的调节输入。 调节输入与用于触发目标的盲孔生产装置的输出端可操作地连接。

    Magnetron source and method of manufacturing
    8.
    发明授权
    Magnetron source and method of manufacturing 有权
    磁控管源及制造方法

    公开(公告)号：US08852412B2

    公开(公告)日：2014-10-07

    申请号：US13022023

    申请日：2011-02-07

    申请人： Juergen Weichart

    发明人： Juergen Weichart

    IPC分类号： C23C14/35 ,  H01J37/34

    CPC分类号： H01J37/3408 ,  H01J37/3455

    摘要： A magnetron source comprises a target (39) with a sputtering surface and a back surface. A magnet arrangement (30, 32, 19a, 19b) is drivingly moved along the backside of the target (39). A tunnel-shaped magnetron magnetic field is generated between an outer loop (30) and an inner loop (32) of the magnet arrangement. Elongated pivotable or rotatable permanent magnet arrangements (19a, 19b) of the magnet arrangement are provided in an interspace between the outer and inner loops (30, 32) of the overall arrangement.

    摘要翻译： 磁控管源包括具有溅射表面和背面的靶（39）。 一磁铁装置（30,32,39a，19b）沿目标（39）的后侧被驱动移动。 在磁体装置的外环（30）和内环（32）之间产生隧道状的磁控管磁场。 磁体装置的细长的可枢转或可旋转的永久磁铁布置（19a，19b）设置在整个布置的外环和内环（30,32）之间的间隙中。

    IN-SITU CONDITIONING FOR VACUUM PROCESSING OF POLYMER SUBSTRATES
    10.
    发明申请
    IN-SITU CONDITIONING FOR VACUUM PROCESSING OF POLYMER SUBSTRATES 有权
    用于真空加工聚合物基材的现场调节

    公开(公告)号：US20130248358A1

    公开(公告)日：2013-09-26

    申请号：US13877960

    申请日：2011-10-03

    申请人： Juergen Weichart

    发明人： Juergen Weichart

    IPC分类号： C23F4/00

    CPC分类号： C23F4/00 ,  C23C14/50 ,  C23C14/541 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/463 ,  H01J37/32522 ,  H01J37/32871

    摘要： An etching chamber is equipped with an actively-cooled element preferentially adsorbs volatile compounds that are evolved from a polymeric layer of a wafer during etching, which compounds will act as contaminants if re-deposited on the wafer, for example on exposed metal contact portions where they may interfere with subsequent deposition of metal contact layers. In desirable embodiments, a getter sublimation pump is also provided in the etching chamber as a source of getter material. Methods of etching in such a chamber are also disclosed.

    摘要翻译： 蚀刻室装备有主动冷却元件，优先吸附在蚀刻期间从晶片的聚合物层放出的挥发性化合物，如果再沉积在晶片上，则化合物将作为污染物，例如在暴露的金属接触部分上， 它们可能会干扰随后沉积金属接触层。 在理想的实施例中，吸气剂升华泵也设置在蚀刻室中作为吸气材料源。 还公开了在这种室中的蚀刻方法。