Master base for fabrication and method for manufacturing the same
    1.
    发明授权
    Master base for fabrication and method for manufacturing the same 失效
    制造基础和制造方法

    公开(公告)号:US06979527B2

    公开(公告)日:2005-12-27

    申请号:US10261609

    申请日:2002-09-30

    CPC分类号: G03F7/094 G03F7/091

    摘要: A master base for fabrication includes a substrate, a first photoresist layer disposed on the substrate, and a second photoresist layer disposed on the first photoresist layer, wherein the first photoresist layer attenuates or absorbs rays reflected at the interface between the first photoresist layer and the substrate to prevent the reflected rays from interfering with applied rays in a exposing step. A method for manufacturing a master base for fabrication includes the steps of forming a first photoresist layer on a substrate, baking the first photoresist layer at the setting temperature of the first photoresist layer, and forming a second photoresist layer on the first photoresist layer.

    摘要翻译: 用于制造的主基底包括衬底,设置在衬底上的第一光致抗蚀剂层和设置在第一光致抗蚀剂层上的第二光致抗蚀剂层,其中第一光致抗蚀剂层衰减或吸收在第一光致抗蚀剂层和第二光致抗蚀剂层之间的界面反射的光线 基板,以防止反射光线在曝光步骤中干扰施加的光线。 制造用于制造的母版的方法包括以下步骤:在衬底上形成第一光致抗蚀剂层,在第一光致抗蚀剂层的设定温度下烘烤第一光致抗蚀剂层,以及在第一光致抗蚀剂层上形成第二光致抗蚀剂层。

    Master base for fabrication and method for manufacturing the same

    公开(公告)号:US20060035472A1

    公开(公告)日:2006-02-16

    申请号:US11250940

    申请日:2005-10-14

    IPC分类号: H01L21/31 H01L21/469

    CPC分类号: G03F7/094 G03F7/091

    摘要: A master base for fabrication includes a substrate, a first photoresist layer disposed on the substrate, and a second photoresist layer disposed on the first photoresist layer, wherein the first photoresist layer attenuates or absorbs rays reflected at the interface between the first photoresist layer and the substrate to prevent the reflected rays from interfering with applied rays in a exposing step. A method for manufacturing a master base for fabrication includes the steps of forming a first photoresist layer on a substrate, baking the first photoresist layer at the setting temperature of the first photoresist layer, and forming a second photoresist layer on the first photoresist layer.