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    LED having vertical structure and method for fabricating the same
    5.
    发明授权
    LED having vertical structure and method for fabricating the same 有权
    具有垂直结构的LED及其制造方法

    公开(公告)号：US08202753B2

    公开(公告)日：2012-06-19

    申请号：US12877652

    申请日：2010-09-08

    申请人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Ho Jang

    发明人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Ho Jang

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/20

    摘要： A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

    摘要翻译： 具有垂直结构的发光二极管（LED）及其制造方法。 具有垂直结构的发光二极管（LED）包括支撑层; 形成在所述支撑层上的第一电极; 形成在所述第一电极上的多个半导体层; 导电半导体层，形成在所述多个半导体层上，并且具有指定度的倾斜角的外表面; 以及形成在导电半导体层上的第二电极。

    Semiconductor memory device and system capable of executing an interleave programming for a plurality of memory chips and a 2-plane programming at the respective memory chips
    6.
    发明授权
    Semiconductor memory device and system capable of executing an interleave programming for a plurality of memory chips and a 2-plane programming at the respective memory chips 有权
    半导体存储器件和系统能够对各个存储器芯片执行多个存储器芯片的交织编程和2平面编程

    公开(公告)号：US08154925B2

    公开(公告)日：2012-04-10

    申请号：US12697543

    申请日：2010-02-01

    申请人： SeongHwan Moon ,  Jun-Ho Jang

    发明人： SeongHwan Moon ,  Jun-Ho Jang

    IPC分类号： G11C16/10

    CPC分类号： G11C16/06 ,  G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7208

    摘要： A semiconductor memory device includes first and second memory chips and a control logic configured to execute an interleave program between the first and second memory chips. The control logic receives write data to be written into first and second memory blocks of the first memory chip. If the first and second memory blocks are normal blocks, the control logic simultaneously performs a program operation for the first and second memory blocks. If one memory block of the first and second memory blocks is a bad block, the control logic writes the received write data corresponding to the one memory block into a storage circuit.

    摘要翻译： 半导体存储器件包括第一和第二存储器芯片以及被配置为在第一和第二存储器芯片之间执行交织程序的控制逻辑。 控制逻辑接收要写入第一存储器芯片的第一和第二存储器块的写入数据。 如果第一和第二存储器块是正常块，则控制逻辑同时对第一和第二存储器块执行编程操作。 如果第一和第二存储器块的一个存储块是坏块，则控制逻辑将接收到的与一个存储器块相对应的写入数据写入存储电路。

    LIGHT EMITTING DEVICE HAVING VERTICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    LIGHT EMITTING DEVICE HAVING VERTICAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
    具有垂直结构的发光装置及其制造方法

    公开(公告)号：US20100155765A1

    公开(公告)日：2010-06-24

    申请号：US12718937

    申请日：2010-03-05

    申请人： Jun Ho JANG ,  Jun Seok Ha

    发明人： Jun Ho JANG ,  Jun Seok Ha

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/0079

    摘要： A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.

    摘要翻译： 一种具有垂直结构的发光器件，其包括具有第一表面和第二表面的半导体层，布置在半导体层的第一表面上的第一电极，布置在半导体层的第二表面上的透明导电氧化物（TCO）层 所述半导体层和布置在所述TCO层上的第二电极。

    Light emitting device having vertical structure and method for manufacturing the same
    10.
    发明授权
    Light emitting device having vertical structure and method for manufacturing the same 有权
    具有垂直结构的发光器件及其制造方法

    公开(公告)号：US07700966B2

    公开(公告)日：2010-04-20

    申请号：US11706977

    申请日：2007-02-16

    申请人： Jun Ho Jang ,  Jun Seok Ha

    发明人： Jun Ho Jang ,  Jun Seok Ha

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/0079

    摘要： A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.

    摘要翻译： 一种具有垂直结构的发光器件，其包括具有第一表面和第二表面的半导体层，布置在半导体层的第一表面上的第一电极，布置在半导体层的第二表面上的透明导电氧化物（TCO）层 所述半导体层和布置在所述TCO层上的第二电极。