公开(公告)号：US07652912B2

公开(公告)日：2010-01-26

申请号：US11520563

申请日：2006-09-14

申请人： Tomoya Kawagoe ,  Jun Otani ,  Hideto Hidaka

发明人： Tomoya Kawagoe ,  Jun Otani ,  Hideto Hidaka

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： A nonvolatile semiconductor memory device includes a free layer having first and second magnetic layers magnetized oppositely to each other, and also having a first nonmagnetic layer formed between the first and second magnetic layers, a first fixed layer having a fixed magnetization direction, a second nonmagnetic layer formed between the second magnetic layer and the first fixed layer, a first drive circuit passing a write current through a first write current line in a data write operation, and thereby generating a data write magnetic field acting on magnetization of the free layer, and a second drive circuit passing a spin injection current between the first magnetic layer and the first fixed layer in a data write operation, and thereby exerting a force in the same direction as or in the direction opposite to the magnetization direction of the first fixed layer on the magnetization of the free layer.

摘要翻译： 非易失性半导体存储器件包括具有彼此相对磁化的第一和第二磁性层的自由层，并且还具有形成在第一和第二磁性层之间的第一非磁性层，具有固定的磁化方向的第一固定层，第二非磁性层 形成在第二磁性层和第一固定层之间的第一驱动电路，在数据写入操作中使写入电流通过第一写入电流线的第一驱动电路，从而产生作用于自由层的磁化的数据写入磁场;以及 第二驱动电路在数据写入操作中在第一磁性层和第一固定层之间通过自旋注入电流，从而在与第一固定层的磁化方向相反的方向上施加力或者在与第一固定层的磁化方向相反的方向上施加力 自由层的磁化。

公开(公告)号：US20070064472A1

公开(公告)日：2007-03-22

申请号：US11520563

申请日：2006-09-14

申请人： Tomoya Kawagoe ,  Jun Otani ,  Hideto Hidaka

发明人： Tomoya Kawagoe ,  Jun Otani ,  Hideto Hidaka

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： A nonvolatile semiconductor memory device includes a free layer having first and second magnetic layers magnetized oppositely to each other, and also having a first nonmagnetic layer formed between the first and second magnetic layers, a first fixed layer having a fixed magnetization direction, a second nonmagnetic layer formed between the second magnetic layer and the first fixed layer, a first drive circuit passing a write current through a first write current line in a data write operation, and thereby generating a data write magnetic field acting on magnetization of the free layer, and a second drive circuit passing a spin injection current between the first magnetic layer and the first fixed layer in a data write operation, and thereby exerting a force in the same direction as or in the direction opposite to the magnetization direction of the first fixed layer on the magnetization of the free layer.

摘要翻译： 非易失性半导体存储器件包括具有彼此相对磁化的第一和第二磁性层的自由层，并且还具有形成在第一和第二磁性层之间的第一非磁性层，具有固定的磁化方向的第一固定层，第二非磁性层 形成在第二磁性层和第一固定层之间的第一驱动电路，在数据写入操作中使写入电流通过第一写入电流线的第一驱动电路，从而产生作用于自由层的磁化的数据写入磁场;以及 第二驱动电路在数据写入操作中在第一磁性层和第一固定层之间通过自旋注入电流，从而在与第一固定层的磁化方向相反的方向上施加力或者在与第一固定层的磁化方向相反的方向上施加力 自由层的磁化。

公开(公告)号：US07829202B2

公开(公告)日：2010-11-09

申请号：US10576224

申请日：2004-10-22

申请人： Tadashi Ishikawa ,  Takehiro Inoue ,  Hiroshi Shimanuki ,  Tadashi Koseki ,  Jun Otani ,  Masanori Minagawa ,  Akihiko Kojima

发明人： Tadashi Ishikawa ,  Takehiro Inoue ,  Hiroshi Shimanuki ,  Tadashi Koseki ,  Jun Otani ,  Masanori Minagawa ,  Akihiko Kojima

IPC分类号： B32B7/02 ,  B32B7/04 ,  B32B15/18 ,  B23K103/04

CPC分类号： C22C38/02 ,  B23K9/02 ,  B23K9/23 ,  B23K31/12 ,  B23K2103/06 ,  C22C38/04 ,  C22C38/08 ,  C22C38/12 ,  Y10T403/477 ,  Y10T428/12965 ,  Y10T428/24983

摘要： A large-heat-input butt-welded joint of welded structures prepared by butt-welding high-strength steel plates over 50 mm in thickness, having excellent brittle fracture resistance, is characterized by: (a1) the hardness of the weld metal is not more than 110% of the hardness of the base metal or (a2) the hardness of the weld metal is not less than 70% and not more than 110% of the hardness of the base metal, and, as required, (b) the width of the weld metal is not more than 70% of the plate thickness of the base metal, (c) the width of the region affected by welding whose hardness is softened to not more than 95% of the hardness of the non-heat-affected base metal has a width not less than 5 mm, and/or (d) the prior austenite grain size in the heat-affected zone (HAZ) contacting the welding fusion line is not more than 200 μm.

摘要翻译： 通过对焊高50mm以上的高强度钢板制成的具有优异的耐脆性断裂性的焊接结构的大型热输入对接焊接接头的特征在于：（a1）焊接金属的硬度不是 贱金属的硬度超过110％，（a2）焊接金属的硬度不低于贱金属的硬度的70％且不超过11​​0％，并且根据需要，（b） 焊接金属的宽度不大于贱金属板厚度的70％，（c）硬度受软化的焊接区域的宽度不大于不加热的硬度的95％ 受影响的贱金属具有不小于5mm的宽度，和/或（d）与焊接熔合线接触的热影响区（HAZ）中的原奥氏体晶粒尺寸不大于200μm。

公开(公告)号：US20070131316A1

公开(公告)日：2007-06-14

申请号：US10576224

申请日：2004-10-22

申请人： Tadashi Ishikawa ,  Takehiro Inoue ,  Hiroshi Shimanuki ,  Tadashi Koseki ,  Jun Otani ,  Masanori Minagawa ,  Akihiko Kojima

发明人： Tadashi Ishikawa ,  Takehiro Inoue ,  Hiroshi Shimanuki ,  Tadashi Koseki ,  Jun Otani ,  Masanori Minagawa ,  Akihiko Kojima

IPC分类号： B32B15/18

CPC分类号： C22C38/02 ,  B23K9/02 ,  B23K9/23 ,  B23K31/12 ,  B23K2103/06 ,  C22C38/04 ,  C22C38/08 ,  C22C38/12 ,  Y10T403/477 ,  Y10T428/12965 ,  Y10T428/24983

摘要： A large-heat-input butt-welded joint of welded structures prepared by butt-welding high-strength steel plates over 50 mm in thickness, having excellent brittle fracture resistance, is characterized by: (a1) the hardness of the weld metal is not more than 110% of the hardness of the base metal or (a2) the hardness of the weld metal is not less than 70% and not more than 110% of the hardness of the base metal, and, as required, (b) the width of the weld metal is not more than 70% of the plate thickness of the base metal, (c) the width of the region affected by welding whose hardness is softened to not more than 95% of the hardness of the non-heat-affected base metal has a width not less than 5 mm, and/or (d) the prior austenite grain size in the heat-affected zone (HAZ) contacting the welding fusion line is not more than 200 μm.

摘要翻译： 通过对焊高50mm以上的高强度钢板制成的具有优异的耐脆性断裂性的焊接结构的大型热输入对接焊接接头的特征在于：（a1）焊接金属的硬度不是 贱金属的硬度超过110％，（a2）焊接金属的硬度不低于贱金属的硬度的70％且不超过11​​0％，并且根据需要，（b） 焊接金属的宽度不大于贱金属板厚度的70％，（c）硬度受软化的焊接区域的宽度不大于不加热的硬度的95％ 受影响的贱金属的宽度不小于5mm，和/或（d）与焊接熔接线接触的热影响区（HAZ）中的原奥氏体晶粒尺寸不大于200μm。

公开(公告)号：US20070181223A1

公开(公告)日：2007-08-09

申请号：US10594660

申请日：2005-04-06

申请人： Minoru Ito ,  Akihiko Kojima ,  Masanori Minagawa ,  Yoichi Tanaka ,  Toshiei Hasegawa ,  Jun Otani

发明人： Minoru Ito ,  Akihiko Kojima ,  Masanori Minagawa ,  Yoichi Tanaka ,  Toshiei Hasegawa ,  Jun Otani

IPC分类号： C22C38/08 ,  C22C38/14

CPC分类号： C22C38/08

摘要： The present invention provides a high-strength thick steel plate having a plate thickness of 50 to 80 mm and a tensile strength of 490 to 570 MPa which is able to realize an excellent HAZ toughness even when welding with a heat input of 20 to 100 kJ/mm is conducted and is characterized by containing, by wt %, 0.03-0.14% of C, 0.30% or less of Si, 0.8-2.0% of Mn, 0.02% or less of P, 0.005% or less of S, 0.8-4.0% of Ni, 0.003-0.040% of Nb, 0.001-0.040% of Al, 0.0010-0.0100% of N, and 0.005-0.030% of Ti, where Ni and Mn satisfy equation [1], and the balance of iron and unavoidable impurities: Ni/Mn≧10×Ceq−3 (0.36

摘要翻译： 本发明提供一种厚度为50〜80mm，拉伸强度为490〜570MPa的高强度厚钢板，即使在20〜100kJ的热输入下进行焊接，也能够实现优异的HAZ韧性 / mm，其特征在于，含有C：0.03-0.14％，0.30％以下的Si，0.8〜2.0％的Mn，0.02％以下的P，0.005％以下的S，0.8 -4.0％的Ni，0.003-0.040％的Nb，0.001-0.040％的Al，0.0010-0.0100％的N和0.005-0.030％的Ti，其中Ni和Mn满足等式[1]，其余的铁 和不可避免的杂质：<？in-line-formula description =“In-line formula”end =“lead”？> Ni / Mn> = 10xCeq-3（0.36