Ferroelectric thin film and method for forming the same
    1.
    发明授权
    Ferroelectric thin film and method for forming the same 有权
    铁电薄膜及其形成方法

    公开(公告)号:US07238388B2

    公开(公告)日:2007-07-03

    申请号:US10704745

    申请日:2003-11-12

    Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

    Abstract translation: 用于形成铁电薄膜的组合物包括:PZT溶胶 - 凝胶溶液,其包含铅前体的全部或部分水解产物及其全部或部分水解缩聚产物中的至少一种; 锆前体的全部或部分水解产物,其全部或部分水解和缩聚产物,以及具有至少一个羟基离子和至少一种不可水解配体的锆络合物; 以及钛前体,其全部或部分水解缩聚产物和具有至少一个羟基离子和至少一个不可水解配体的钛络合物的全部或部分水解产物; 和包含硅前体的全部或部分水解产物及其全部或部分水解和缩聚产物中的至少一种的Bi 2 SiO 5溶胶 - 凝胶溶液, 和通过回流作为铋前体的三苯基铋获得的结果。

    Ferroelectric capacitor and method of manufacturing the same

    公开(公告)号:US20060102944A1

    公开(公告)日:2006-05-18

    申请号:US11319555

    申请日:2005-12-29

    Abstract: A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.

    Fingerprint sensor using a piezoelectric membrane

    公开(公告)号:US07013031B2

    公开(公告)日:2006-03-14

    申请号:US10139251

    申请日:2002-05-07

    CPC classification number: G06K9/0002

    Abstract: A fingerprint sensor for sensing a fingerprint by converting pressure applied to a piezoelectric membrane into an electrical signal is provided, wherein the fingerprint sensor having an aggregate of piezoelectric devices includes: a substrate; a lower electrode formed on the substrate; a piezoelectric membrane formed on the lower electrode; an upper electrode formed on the piezoelectric membrane; a pressuring portion formed on the upper electrode for changing a quantity of charge on the piezoelectric membrane due to pressure exerted by contact of a fingerprint; and a non-conductive layer formed on the lower electrode for supporting and exposing the pressuring portion. Thus, a fingerprint sensor having a simple structure is provided, which is able to precisely sense fingerprint information utilizing a piezoelectric phenomenon. The fingerprint sensor may be applied to systems for identifying persons' identities in public institutions and private enterprises, and in individuals' portable systems.

    Single transistor type magnetic random access memory device and method of operating and manufacturing the same

    公开(公告)号:US06992923B2

    公开(公告)日:2006-01-31

    申请号:US11097157

    申请日:2005-04-04

    CPC classification number: H01L27/228 B82Y10/00

    Abstract: A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

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