公开(公告)号：US09428853B2

公开(公告)日：2016-08-30

申请号：US13483361

申请日：2012-05-30

申请人： Hyun Mook Kim ,  Doo Pil Kim ,  Je Hong Min ,  Kalo Jin Jun ,  Yong Jong Park ,  Jae Ryong Park ,  Dong Pil Seo ,  Sang Hyeok Lee ,  In Cheol Jang ,  Sang Yeon Pyo ,  Jung Hee Lee ,  Ji Hoon Choi ,  Seung Oh Kim

发明人： Hyun Mook Kim ,  Doo Pil Kim ,  Je Hong Min ,  Kalo Jin Jun ,  Yong Jong Park ,  Jae Ryong Park ,  Dong Pil Seo ,  Sang Hyeok Lee ,  In Cheol Jang ,  Sang Yeon Pyo ,  Jung Hee Lee ,  Ji Hoon Choi ,  Seung Oh Kim

IPC分类号： D06F23/04

CPC分类号： D06F23/04

摘要： A washing machine having an improved structure which increases washing capacity without increasing the size of the washing machine. The washing machine includes a cabinet including an outer part and a cylindrical inner part connected to the outer part, a spin basket rotatably disposed in the inner part and including a bottom and a side wall extending from the bottom, a pulsator rotatably disposed in the spin basket, a motor provided under the spin basket, a clutch to selectively transmit power of the motor to the spin basket or the pulsator, a base plate to fix the clutch and the motor, and suspension members connecting the base plate to the upper portion of the cabinet. Wash water is stored within the spin basket and is not stored outside the spin basket during a washing cycle.

摘要翻译： 一种具有改进的结构的洗衣机，其在不增加洗衣机的尺寸的情况下增加洗涤能力。 洗衣机包括一个外壳和一个与外部连接的圆柱形内部的机壳，一个可旋转地设置在内部的旋转筒，包括底部和从底部延伸的侧壁，一个可旋转地设置在旋转中的波轮 设置在旋转筐下的马达，用于选择性地将马达的动力传递到旋转筐或波轮的离合器，用于固定离合器和马达的基板，以及将基板连接到上部的悬挂构件 内阁。 洗涤水储存在旋转筒内，并且在洗涤循环期间不会储存在旋转筒外部。

公开(公告)号：USD748903S1

公开(公告)日：2016-02-09

申请号：US29510725

申请日：2014-12-02

申请人： Jung Hee Lee

设计人： Jung Hee Lee

公开(公告)号：US08748154B2

公开(公告)日：2014-06-10

申请号：US13702745

申请日：2011-03-25

申请人： Kyung Suk Cho ,  Jung Hee Lee ,  Kyung Eun Moon ,  Tae Gwan Kim ,  Sang Hyon Lee

发明人： Kyung Suk Cho ,  Jung Hee Lee ,  Kyung Eun Moon ,  Tae Gwan Kim ,  Sang Hyon Lee

IPC分类号： C12N1/12 ,  C12N1/20 ,  A62D3/00 ,  C12M1/00

CPC分类号： C12N1/20 ,  A61L9/014 ,  A61L2209/14 ,  C12R1/01

摘要： The present invention relates to a Sphingomonas sp. MD2 strain (KCTC 11845BP), a composition including the strain for decomposing methane or odor-producing compounds, a biocover or biofilter including the composition, a method for decomposing methane or odor-producing compounds using the composition, a system for decomposing methane or odor-producing compounds using the biocover or biofilter, and the use of the strain for decomposing methane or odor-producing compounds. According to the present invention, methane and odor can be effectively removed concurrently, and thus the cost required for the separate treatment of methane and odor can be reduced, and methane and odor-producing compounds in landfills or the like can be effectively decomposed.

摘要翻译： 本发明涉及鞘氨醇单胞菌 MD2菌株（KCTC 11845BP），包含用于分解甲烷或异味生成化合物的菌株的组合物，包含该组合物的生物覆盖物或生物过滤器，使用该组合物分解甲烷或产生异味的化合物的方法，用于分解甲烷或气味的体系 使用生物过滤器或生物过滤器生产化合物，以及使用该菌株分解甲烷或产生气味的化合物。 根据本发明，可以同时有效地除去甲烷和气味，从而可以降低单独处理甲烷和气味所需的成本，并且可以有效地分解填埋场等中的甲烷和产生气味的化合物。

公开(公告)号：US08637902B2

公开(公告)日：2014-01-28

申请号：US12907653

申请日：2010-10-19

申请人： Ki Yeol Park ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

发明人： Ki Yeol Park ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/737 ,  H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/66462

摘要： There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.

摘要翻译： 提供了具有允许增强性能的高电子迁移率晶体管（HEMT）结构的半导体器件及其制造方法。 半导体器件包括：基底; 设置在所述基底基板上的半导体层; 源电极，栅电极和漏极，设置在所述半导体层上以彼此间隔开; 以及部分地设置在漏电极和半导体层之间的界面处的欧姆接触层。

公开(公告)号：US08551821B2

公开(公告)日：2013-10-08

申请号：US12960499

申请日：2010-12-04

申请人： Jung Hee Lee ,  Ki Sik Im ,  Jong Bong Ha

发明人： Jung Hee Lee ,  Ki Sik Im ,  Jong Bong Ha

IPC分类号： H01L21/335 ,  H01L21/8232 ,  H01L21/339 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/7787 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462

摘要： The present invention relates to an enhancement normally off nitride semiconductor device and a method of manufacturing the same. The method includes the steps of: forming a buffer layer on a substrate; forming a first nitride semiconductor layer on the buffer layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer; etching a gate region above the second nitride semiconductor layer up to a predetermined depth of the first nitride semiconductor layer; forming an insulating film on the etched region and the second nitride semiconductor layer; patterning a source/drain region, etching the insulating film in the source/drain region, and forming electrodes in the source/drain region; and forming a gate electrode on the insulating film in the gate region. In this manner, the present invention provides a method of easily implementing a normally off enhancement semiconductor device by originally blocking 2DEG which is generated under a gate region. In addition, the present invention provides an enhancement normally off power semiconductor device with a simple and efficient driving circuit in a HEMT device.

摘要翻译： 本发明涉及一种增强常关氮化物半导体器件及其制造方法。 该方法包括以下步骤：在衬底上形成缓冲层; 在所述缓冲层上形成第一氮化物半导体层; 在所述第一氮化物半导体层上形成第二氮化物半导体层; 将第二氮化物半导体层上方的栅极区域蚀刻到第一氮化物半导体层的预定深度; 在蚀刻区域和第二氮化物半导体层上形成绝缘膜; 图案化源极/漏极区域，蚀刻源极/漏极区域中的绝缘膜，以及在源极/漏极区域中形成电极; 以及在栅极区域的绝缘膜上形成栅电极。 以这种方式，本发明提供了一种通过最初阻挡在栅极区域下产生的2DEG来容易地实现常关的增强型半导体器件的方法。 此外，本发明提供了一种在HEMT装置中具有简单有效的驱动电路的增强型常关功率半导体器件。

公开(公告)号：US20130036774A1

公开(公告)日：2013-02-14

申请号：US13570636

申请日：2012-08-09

申请人： Hyun Mook KIM ,  Sang Hyeok LEE ,  Je Hong MIN ,  Jung Hee LEE ,  Ji Hoon CHOI ,  Kab Jin JUN

发明人： Hyun Mook KIM ,  Sang Hyeok LEE ,  Je Hong MIN ,  Jung Hee LEE ,  Ji Hoon CHOI ,  Kab Jin JUN

IPC分类号： D06F21/00

CPC分类号： D06F39/083 ,  D06F37/26

摘要： A washing machine includes a rotary tub having a diameter progressively increasing from a first end side thereof to a second end side thereof located opposite the first end side, dehydration holes arranged at the second end side of the rotary tub, and a dehydration hole switching unit to open and close the dehydration holes. The dehydration holes are opened depending on increase of a rate of rotation of the rotary tub.

摘要翻译： 一种洗衣机包括：从其第一端侧的第一端侧到第二端侧的直径逐渐增加的旋转桶，设置在旋转桶的第二端侧的脱水孔，以及脱水孔切换单元 打开和关闭脱水孔。 脱水孔根据旋转桶的旋转速度的增加而打开。

公开(公告)号：US20130034939A1

公开(公告)日：2013-02-07

申请号：US13550920

申请日：2012-07-17

申请人： Jae Hoon LEE ,  Ki Se KIM ,  Jung Hee LEE ,  Ki Sik IM ,  Dong Seok KIM

发明人： Jae Hoon LEE ,  Ki Se KIM ,  Jung Hee LEE ,  Ki Sik IM ,  Dong Seok KIM

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/2003

摘要： A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.

摘要翻译： 制造功率器件的方法包括在衬底上形成第一漂移区。 通过图案化第一漂移区域形成沟槽。 通过在沟槽中生长氮化镓（GaN）并且交替地设置第一漂移区和第二漂移区，形成第二漂移区。 源电极接触层形成在第二漂移区上。 在源电极接触层上形成源电极和栅电极。 在基板的与第一漂移区域相反的一侧上形成漏电极。

公开(公告)号：US08319309B2

公开(公告)日：2012-11-27

申请号：US12654936

申请日：2010-01-08

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L27/095

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/7787

摘要： The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed on the edge regions of the semiconductor layer in such a manner to be disposed to be spaced apart from the first ohmic electrodes, and have a ring shape surrounding the first ohmic electrode; and a Schottky electrode part which is formed on the central region to cover the first ohmic electrode and is formed to be spaced apart from the second ohmic electrode.

摘要翻译： 本发明提供一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有在其中形成的二维电子气体（2DEG）; 设置在所述半导体层的中心区域上的第一欧姆电极; 形成在所述半导体层的边缘区域上的第二欧姆电极，以与所述第一欧姆电极间隔开的方式设置，并且具有环绕所述第一欧姆电极的环形形状; 以及形成在中心区域上以覆盖第一欧姆电极并形成为与第二欧姆电极间隔开的肖特基电极部分。

公开(公告)号：US08228452B2

公开(公告)日：2012-07-24

申请号：US12630249

申请日：2009-12-03

申请人： Jung-Hee Lee ,  Yoon-Sung Um ,  Jong-Ho Son ,  Jae-Jin Lyu

发明人： Jung-Hee Lee ,  Yoon-Sung Um ,  Jong-Ho Son ,  Jae-Jin Lyu

IPC分类号： G02F1/1343

CPC分类号： G02F1/1368 ,  G02F1/13624 ,  G02F2001/134345 ,  H01L27/1255

摘要： A thin film transistor array panel is provided, which includes: an insulating substrate; a gate line formed on the substrate and including a gate electrode; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer opposite the gate electrode; a data line formed on the gate insulating layer and including a first source electrode located on the semiconductor layer; first and second drain electrodes formed on the semiconductor layer, separated from each other and overlapping the gate electrode; a passivation layer formed on the data line and the first and second drain electrodes; and first and second pixel electrodes electrically connected to the first and second electrodes, respectively, wherein an overlapping area between the gate electrode and the first drain electrode is different from an overlapping area between the gate electrode and the second drain electrode.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：绝缘基板; 形成在所述基板上并包括栅电极的栅极线; 栅极绝缘层，形成在栅极线上; 形成在与栅电极相对的栅极绝缘层上的半导体层; 形成在所述栅绝缘层上并且包括位于所述半导体层上的第一源电极的数据线; 形成在半导体层上的第一和第二漏极彼此分离并与栅电极重叠; 形成在所述数据线和所述第一和第二漏电极上的钝化层; 以及分别电连接到第一和第二电极的第一和第二像素电极，其中栅电极和第一漏电极之间的重叠区域与栅电极和第二漏电极之间的重叠区域不同。

公开(公告)号：US20120088341A1

公开(公告)日：2012-04-12

申请号：US13178902

申请日：2011-07-08

申请人： Hyuk-soon Choi ,  Jung-hee Lee ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  In-jun Hwang ,  Ki-ha Hong ,  Ki-sik Im ,  Ki-won Kim ,  Dong-seok Kim

发明人： Hyuk-soon Choi ,  Jung-hee Lee ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  In-jun Hwang ,  Ki-ha Hong ,  Ki-sik Im ,  Ki-won Kim ,  Dong-seok Kim

IPC分类号： H01L21/338

CPC分类号： H01L29/66462 ,  H01L21/0254 ,  H01L21/76237 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/4236 ,  H01L29/7787

摘要： The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.

摘要翻译： 所述方法可以包括在衬底上形成第一材料层，增加第一材料层的电阻，以及在第一材料层上形成彼此间隔开的源图案和漏极图案，带隙为 源极和漏极图案大于第一材料层的带隙。