公开(公告)号：US6046063A

公开(公告)日：2000-04-04

申请号：US276420

申请日：1999-03-25

申请人： Jung Mok Jun ,  Bong Yeol Ryu ,  Jung Yeal Lee

发明人： Jung Mok Jun ,  Bong Yeol Ryu ,  Jung Yeal Lee

IPC分类号： G02F1/1343 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/00

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1248

摘要： A method of manufacturing liquid crystal display (LCD), comprising the steps of: forming a bottom indium tin oxide (ITO) in a pixel area of a transparent insulating substrate; forming a gate line and a storage line spaced with each other, the storage line including a first part having a first width and a second part having a second width, the second part is formed in the central portion of the pixel region and the first part is formed in the both sides of the second part and is directly contacted with the bottom ITO; depositing a gate insulating layer over the entire surface of the substrate; forming a semiconductor layer on the gate insulating layer over the gate line; forming a data line being in perpendicular to the gate line, source and drain electrodes being overlapped with both side portions of the semiconductor layer and a conductive pattern being disposed over the second part of the storage line; depositing an organic insulating layer having lower dielectric constant on the entire surface of the substrate by a spin coating method; etching the organic insulating layer to form a contact hole so as to expose the conductive pattern; forming a top ITO on the organic insulating layer over the entire pixel area to be overlapped with portions of the gate line and the data line, the top ITO being in contact with the conductive pattern through the contact hole.

摘要翻译： 一种制造液晶显示器（LCD）的方法，包括以下步骤：在透明绝缘基板的像素区域中形成底部氧化铟锡（ITO）; 形成彼此间隔开的栅极线和存储线，所述存储线包括具有第一宽度的第一部分和具有第二宽度的第二部分，所述第二部分形成在所述像素区域的中心部分中，并且所述第一部分 形成在第二部分的两侧并与底部ITO直接接触; 在衬底的整个表面上沉积栅极绝缘层; 在栅极线上的栅极绝缘层上形成半导体层; 形成垂直于栅极线的数据线，源极和漏极与半导体层的两个侧面重叠，并且导电图案设置在存储线的第二部分上; 通过旋涂法在基板的整个表面上沉积具有较低介电常数的有机绝缘层; 蚀刻有机绝缘层以形成接触孔，以暴露导电图案; 在整个像素区域上在有机绝缘层上形成顶部ITO以与栅极线和数据线的部分重叠，顶部ITO通过接触孔与导电图案接触。

公开(公告)号：US06522380B2

公开(公告)日：2003-02-18

申请号：US09797761

申请日：2001-03-01

申请人： Seung Hee Lee ,  Seok Lyul Lee ,  Woo Ho Choi ,  Jung Yeal Lee

发明人： Seung Hee Lee ,  Seok Lyul Lee ,  Woo Ho Choi ,  Jung Yeal Lee

IPC分类号： G02F1343

CPC分类号： G02F1/134363 ,  G02F2001/134372

摘要： Disclosed is a liquid crystal display comprising: a first substrate and a second substrate, the first substrate being disposed opposite the second substrate and being disposed a first distance apart, each of the substrates having an inner surface and an outer surface opposite the inner surface; a liquid crystal layer sandwiched between the inner surfaces of the substrates, the liquid crystal layer including a plurality of liquid crystal molecules; a first electrode formed on the inner surface of the first substrate, the first electrode having a first width; and a second electrode formed on the inner surface of the first substrate, the second electrode having a second width, and spaced apart from the first electrode by a second distance, the first electrode and the second electrode being capable of aligning the liquid crystal molecules using an electric field produced between the first electrode and the second electrode, wherein the first distance is greater in length than the second distance, and the first and second electrodes each has a width to such a degree that the liquid crystal molecules above the first and second electrodes are substantially aligned by the electric field.

摘要翻译： 公开了一种液晶显示器，包括：第一基板和第二基板，所述第一基板与所述第二基板相对地设置并且间隔开第一距离，每个所述基板具有内表面和与所述内表面相对的外表面; 夹在基板的内表面之间的液晶层，液晶层包括多个液晶分子; 形成在所述第一基板的内表面上的第一电极，所述第一电极具有第一宽度; 以及形成在所述第一基板的内表面上的第二电极，所述第二电极具有第二宽度，并且与所述第一电极间隔开第二距离，所述第一电极和所述第二电极能够使用 在所述第一电极和所述第二电极之间产生的电场，其中所述第一距离的长度大于所述第二距离，并且所述第一和第二电极各自具有使所述第一和第二电极之上的液晶分子的宽度 电极基本上由电场对准。

公开(公告)号：US06362858B1

公开(公告)日：2002-03-26

申请号：US09456188

申请日：1999-12-07

申请人： Jong Yob Jeon ,  Jung Yeal Lee

发明人： Jong Yob Jeon ,  Jung Yeal Lee

IPC分类号： G02F1136

CPC分类号： G02F1/1362 ,  G02F1/134363

摘要： Disclosed is a method of manufacturing a fringe field switching mode liquid crystal display device which can simplify process by reducing mask number. According to the present invention, a first transparent metal layer and a first metal layer are sequentially deposited on a transparent insulating substrate and patterned using a first mask. Next, a gate insulating layer, an amorphous silicon layer and a silicon nitride layer are sequentially deposited on the overall substrate and the silicon nitride layer is patterned using a second mask. The pattern portion is then patterned using a third mask so as to be exposed in the shape of a plate. Thereafter, a doped amorphous silicon layer and a second metal layer are sequentially deposited on the overall substrate and the second metal layer is patterned using the fourth mask. The doped amorphous silicon layer and the amorphous silicon layer are then etched using the source and drain as a mask. Next, a passivation layer is formed on the overall substrate and etched so as to expose a portion of the source. Thereafter, a second transparent metal layer is deposited on the passivation layer so as to fill the contact hole and patterned using a sixth mask.

摘要翻译： 公开了一种制造边缘场开关模式液晶显示装置的方法，其可以通过减少掩模数来简化工艺。 根据本发明，第一透明金属层和第一金属层依次沉积在透明绝缘基板上并使用第一掩模进行图案化。 接下来，在整个基板上依次沉积栅极绝缘层，非晶硅层和氮化硅层，并且使用第二掩模对氮化硅层进行图案化。 然后使用第三掩模对图案部分进行图案化，以便以板的形状暴露。 此后，掺杂的非晶硅层和第二金属层顺序地沉积在整个基板上，并且使用第四掩模对第二金属层进行图案化。 然后使用源极和漏极作为掩模蚀刻掺杂的非晶硅层和非晶硅层。 接下来，在整个基板上形成钝化层并进行蚀刻以暴露源的一部分。 此后，在钝化层上沉积第二透明金属层，以便填充接触孔并使用第六掩模进行图案化。

公开(公告)号：US06233034B1

公开(公告)日：2001-05-15

申请号：US09087422

申请日：1998-05-29

申请人： Seung Hee Lee ,  Seok Lyul Lee ,  Woo Ho Choi ,  Jung Yeal Lee

发明人： Seung Hee Lee ,  Seok Lyul Lee ,  Woo Ho Choi ,  Jung Yeal Lee

IPC分类号： G02F11345

CPC分类号： G02F1/134363 ,  G02F2001/134372

摘要： Disclosed is a liquid crystal display comprising: a first substrate and a second substrate, the first substrate being disposed opposite the second substrate and being disposed a first distance apart, each of the substrates having an inner surface and an outer surface opposite the inner surface; a liquid crystal layer sandwiched between the inner surfaces of the substrates, the liquid crystal layer including a plurality of liquid crystal molecules; a first electrode formed on the inner surface of the first substrate, the first electrode having a first width; and a second electrode formed on the inner surface of the first substrate, the second electrode having a second width, and spaced apart from the first electrode by a second distance, the first electrode and the second electrode being capable of aligning the liquid crystal molecules using an electric field produced between the first electrode and the second electrode, wherein the first distance is greater in length than the second distance, and the first and second electrodes each has a width to such a degree that the liquid crystal molecules above the first and second electrodes are substantially aligned by the electric field.

摘要翻译： 公开了一种液晶显示器，包括：第一基板和第二基板，所述第一基板与所述第二基板相对地设置并且间隔开第一距离，每个所述基板具有内表面和与所述内表面相对的外表面; 夹在基板的内表面之间的液晶层，液晶层包括多个液晶分子; 形成在所述第一基板的内表面上的第一电极，所述第一电极具有第一宽度; 以及形成在所述第一基板的内表面上的第二电极，所述第二电极具有第二宽度，并且与所述第一电极间隔开第二距离，所述第一电极和所述第二电极能够使用 在所述第一电极和所述第二电极之间产生的电场，其中所述第一距离的长度大于所述第二距离，并且所述第一和第二电极各自具有使所述第一和第二电极之上的液晶分子的宽度 电极基本上由电场对准。

公开(公告)号：US5700699A

公开(公告)日：1997-12-23

申请号：US405501

申请日：1995-03-16

申请人： Chul-Hi Han ,  Choong-Ki Kim ,  Jung-Yeal Lee ,  Kil-Hwan Oh

发明人： Chul-Hi Han ,  Choong-Ki Kim ,  Jung-Yeal Lee ,  Kil-Hwan Oh

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/28158 ,  H01L29/4908

摘要： A method for fabricating the polycrystal silicon TFT under a low temperature which has an improved electron mobility, comprises the steps of forming an oxide film on a substrate, depositing a polycrystal silicon on the oxide film and patterning the polycrystal silicon so that source and drain regions and a channel region remain, growing a gate insulating layer on the patterned polycrystal silicon by ECR plasma thermal oxidation, depositing a material for a gate on the whole surface and removing the material and the gate insulating layer in portions except for a gate region to form the gate, and performing ion implantation on the exposed areas of the polycrystal silicon to form the source and drain regions.

摘要翻译： 在低温下制造具有改善的电子迁移率的多晶硅TFT的方法包括以下步骤：在衬底上形成氧化膜，在氧化物膜上沉积多晶硅并使多晶硅图形化，使得源极和漏极区域 并且保持沟道区域，通过ECR等离子体热氧化在图案化多晶硅上生长栅极绝缘层，在整个表面上沉积用于栅极的材料，并除去栅极区域以外的部分去除材料和栅极绝缘层以形成 并且在多晶硅的暴露区域上进行离子注入以形成源区和漏区。