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    IMAGE SENSOR FOR OUTPUTTING RGB BAYER SIGNAL THROUGH INTERNAL CONVERSION AND IMAGE PROCESSING APPARATUS INCLUDING THE SAME
    3.
    发明申请
    IMAGE SENSOR FOR OUTPUTTING RGB BAYER SIGNAL THROUGH INTERNAL CONVERSION AND IMAGE PROCESSING APPARATUS INCLUDING THE SAME 审中-公开
    用于通过内部转换和图像处理装置输出RGB BAYER信号的图像传感器，包括它们

    公开(公告)号：US20140049670A1

    公开(公告)日：2014-02-20

    申请号：US14058755

    申请日：2013-10-21

    申请人： Bum Suk KIM ,  Jung Chak AHN ,  Tae Sub JUNG

    发明人： Bum Suk KIM ,  Jung Chak AHN ,  Tae Sub JUNG

    IPC分类号： H04N5/378

    CPC分类号： H04N5/378 ,  H04N5/3745 ,  H04N9/045

    摘要： The image sensor includes a pixel array including a plurality of pixels arranged in a non-red-green-blue (RGB) Bayer pattern, an analog-to-digital converter configured to convert an analog pixel signal output from each of the pixels into a digital pixel signal and an RGB converter configured to convert the digital pixel signal into an RGB Bayer signal. Accordingly, the image sensor is compatible with a universal image signal processor (ISP), which receives and processes RGB Bayer signals, without an additional compatible device or module.

    摘要翻译： 图像传感器包括：像素阵列，包括以非红 - 绿 - 蓝（RGB）拜耳图案排列的多个像素;模拟 - 数字转换器，被配置为将从每个像素输出的模拟像素信号转换为 数字像素信号和被配置为将数字像素信号转换为RGB拜耳信号的RGB转换器。 因此，图像传感器与通用图像信号处理器（ISP）兼容，该处理器接收并处理RGB拜耳信号，而没有附加的兼容设备或模块。

    Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays
    5.
    发明授权
    Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays 有权
    单位像素包括升压电容器，包括单位像素的像素阵列和包括像素阵列的光检测装置

    公开(公告)号：US08563914B2

    公开(公告)日：2013-10-22

    申请号：US12801196

    申请日：2010-05-27

    申请人： Jung-chak Ahn ,  Kyung-ho Lee ,  Shay Hamami ,  Young-hwan Park

    发明人： Jung-chak Ahn ,  Kyung-ho Lee ,  Shay Hamami ,  Young-hwan Park

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14609 ,  H04N5/3597 ,  H04N5/363 ,  H04N5/37452

    摘要： A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.

    摘要翻译： 能够实现浮动扩散区域的完全初始化的单位像素，包括单位像素的像素阵列，以及包括该像素阵列的受光器件。 单位像素包括光电检测器，用于将从光电检测器产生的电荷传输到浮动扩散区域的传输晶体管，用于初始化浮动扩散区域的复位晶体管，以及具有连接到浮动扩散区域的第一端子的升压电容器， 端子，施加升压电压。

    Image sensor and image sensing system including the same
    6.
    发明授权
    Image sensor and image sensing system including the same 有权
    图像传感器和图像传感系统包括相同的

    公开(公告)号：US08487351B2

    公开(公告)日：2013-07-16

    申请号：US12591632

    申请日：2009-11-25

    申请人： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

    发明人： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

    摘要： The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

    摘要翻译： 提供了图像传感器和包括其的图像感测系统。 图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。 图像传感器包括至少一个阻热器或隔热罩。 可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。 热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。 使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

    Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag
    8.
    发明授权
    Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag 失效
    用于制造具有袖珍光电二极管的CMOS图像传感器以最小化图像滞后的方法

    公开(公告)号：US08003424B2

    公开(公告)日：2011-08-23

    申请号：US11983913

    申请日：2007-11-13

    申请人： Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Sae-Young Kim

    发明人： Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Sae-Young Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/035281

    摘要： A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.

    摘要翻译： CMOS图像传感器包括形成在第一导电类型的半导体衬底中的感光器件，浮动扩散区域，转移晶体管和腔室光电二极管。 浮动扩散区域是第二导电类型。 转移晶体管具有设置在感光器件和浮动扩散区域之间的沟道区域。 袋状光电二极管是第二导电类型，并且形成在沟道区的底表面的第一部分下方，使得沟道区的底表面的第二部分与半导体衬底相邻。

    BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME
    9.
    发明申请
    BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME 有权
    背景照明CMOS图像传感器及其制造方法

    公开(公告)号：US20110193147A1

    公开(公告)日：2011-08-11

    申请号：US12984404

    申请日：2011-01-04

    申请人： Jung-Chak Ahn ,  Kyung-ho Lee

    发明人： Jung-Chak Ahn ,  Kyung-ho Lee

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L27/1464 ,  H01L27/1461 ,  H01L27/14645 ,  H01L27/14689

    摘要： Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.

    摘要翻译： 具有凸形光接收面的背面照明CMOS图像传感器及其制造方法。 背面照明CMOS图像传感器包括金属层，绝缘层和光电二极管。 绝缘层位于金属层上。 光电二极管在绝缘层上，并且接收光的光电二极管的顶面是弯曲的。 包括具有凸表面的光电二极管的背面照明CMOS图像传感器的制造方法包括在光电二极管的受光面的一部分上形成小于光电二极管的岛，并退火该岛以形成具有凸光的光电二极管 接受面孔