公开(公告)号：US08940622B2

公开(公告)日：2015-01-27

申请号：US13370681

申请日：2012-02-10

申请人： Junichi Kon

发明人： Junichi Kon

IPC分类号： H01L21/20 ,  C11D7/60 ,  H01L29/778 ,  C11D7/50 ,  C11D11/00 ,  H01L29/66 ,  H01L29/20

CPC分类号： C11D11/0047 ,  C11D7/5013 ,  C11D7/5022 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A method for manufacturing a compound semiconductor device, the method includes: forming a compound semiconductor laminated structure; removing a part of the compound semiconductor laminated structure, so as to form a concave portion; and cleaning the inside of the concave portion by using a detergent, wherein the detergent contains a base resin compatible with residues present in the concave portion and a solvent.

摘要翻译： 一种化合物半导体器件的制造方法，该方法包括：形成化合物半导体层叠结构体; 去除所述化合物半导体层叠结构的一部分，以形成凹部; 并且通过使用洗涤剂来清洁凹部内部，其中洗涤剂含有与存在于凹部中的残留物相溶的基础树脂和溶剂。

公开(公告)号：US08815017B2

公开(公告)日：2014-08-26

申请号：US13951803

申请日：2013-07-26

申请人： Shirou Ozaki ,  Masayuki Takeda ,  Norikazu Nakamura ,  Junichi Kon

发明人： Shirou Ozaki ,  Masayuki Takeda ,  Norikazu Nakamura ,  Junichi Kon

IPC分类号： H01L21/00 ,  B08B3/08 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0272 ,  H01L21/67057 ,  H01L29/66462

摘要： A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

摘要翻译： 制造半导体器件的方法包括：保持具有相对于垂直方向和水平方向倾斜的表面的半导体衬底; 并将半导体衬底浸入包含酸的清洗溶液中。

公开(公告)号：US08338072B2

公开(公告)日：2012-12-25

申请号：US11859930

申请日：2007-09-24

申请人： Junichi Kon

发明人： Junichi Kon

IPC分类号： G03C5/00 ,  G03F7/00

CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/2059 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11543

摘要： To provide a resist composition capable of prevention of the formation of abnormal resist pattern shapes for efficient, high-precision formation of fine, high-resolution resist patterns, a resist pattern forming process capable of efficient, high-precision formation of finer, high-resolution resist patterns by using the resist composition, and a method for manufacturing a semiconductor device. The resist composition of the present invention includes a base resin, a photoacid generator, a first additive, and a second additive, wherein the pKa of the second additive is higher than the pKa of the first additive, and at a resist formation temperature, the vapor pressure of the second additive is lower than the vapor pressure of the first additive.

摘要翻译： 为了提供能够防止形成异常抗蚀剂图案形状的抗蚀剂组合物，用于高精度，高精度地形成精细的高分辨率抗蚀剂图案的抗蚀剂图案形成工艺，能够高效，高精度地形成更精细， 通过使用抗蚀剂组合物的抗蚀剂图案，以及半导体器件的制造方法。 本发明的抗蚀剂组合物包括基础树脂，光致酸产生剂，第一添加剂和第二添加剂，其中第二添加剂的pKa高于第一添加剂的pKa，并且在抗蚀剂形成温度下， 第二添加剂的蒸气压低于第一添加剂的蒸气压。

公开(公告)号：US08334091B2

公开(公告)日：2012-12-18

申请号：US12213820

申请日：2008-06-25

申请人： Koji Nozaki ,  Miwa Kozawa ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

发明人： Koji Nozaki ,  Miwa Kozawa ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

IPC分类号： G03F7/00

CPC分类号： H01L27/11526 ,  G03F7/0048 ,  G03F7/095 ,  G03F7/40 ,  H01L21/31138 ,  H01L27/105 ,  H01L27/11543

摘要： To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.

摘要翻译： 为了提供一种在真空深紫外线区域中利用光刻法在图案化技术中容易地形成超过曝光极限的微观图案的方法，通过混合水溶性或碱溶性组合物，包含 树脂和交联剂以及非离子界面活性剂和选自醇基，链或环酯，酮基，链或环醚基有机溶剂的有机溶剂中的任一种。

公开(公告)号：US07189783B2

公开(公告)日：2007-03-13

申请号：US10305258

申请日：2002-11-27

申请人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

发明人： Miwa Kozawa ,  Koji Nozaki ,  Takahisa Namiki ,  Junichi Kon ,  Ei Yano

IPC分类号： C03C15/00 ,  C03C25/68 ,  C03F1/00

CPC分类号： H01L27/11526 ,  G03F7/0035 ,  G03F7/40 ,  G11B5/17 ,  G11B5/312 ,  G11B5/3163 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11543

摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

摘要翻译： 抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。 抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂 图案加厚。 形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。 半导体器件具有由抗蚀剂图案形成的图案。 制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

公开(公告)号：US20050277055A1

公开(公告)日：2005-12-15

申请号：US11050830

申请日：2005-02-07

申请人： Junichi Kon

发明人： Junichi Kon

IPC分类号： G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  G03C1/492

CPC分类号： G03F7/11 ,  G03F7/093 ,  G03F7/095

摘要： Technologies to form fine resist patterns consistently by solving the problem of poor patterning influenced by a resist-protecting film, are provided. A layer made of a resist (resist layer) is formed on a substrate, a resist-protecting film comprising an antistatic resin and a photo-acid generating agent is formed on the resist layer, and active-energy rays are selectively irradiated over the resist-protecting film, so that a resist pattern is formed by developing the resist.

摘要翻译： 提供通过解决由抗蚀剂保护膜影响的不良图案的问题而一致地形成精细抗蚀剂图案的技术。 在基板上形成由抗蚀剂（抗蚀剂层）构成的层，在抗蚀剂层上形成包含抗静电树脂和光酸发生剂的抗蚀剂保护膜，并且在抗蚀剂上选择性地照射活性能量射线 保护膜，使得通过显影抗蚀剂形成抗蚀剂图案。

公开(公告)号：US06794113B2

公开(公告)日：2004-09-21

申请号：US10291671

申请日：2002-11-12

申请人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

发明人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

IPC分类号： G03F7004

CPC分类号： H01L21/0274 ,  G03F7/0045 ,  G03F7/038 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/28123 ,  H01L21/312 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/128

摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

摘要翻译： 负性抗蚀剂组合物包含（1）本身可溶于碱性水溶液的成膜聚合物，并且在分子中含有具有碱溶性基团的第一单体单元和在侧链上具有醇结构的第二单体单元 其能够与碱溶性基团反应，和（2）光致酸产生剂，当通过图像形成辐射的吸收分解时，能够产生可引起第二单体的醇结构之间的反应的酸 单元和第一单体单元的碱溶性基团，或保护第一单体单元的碱溶性基团。 抗蚀剂组合物可以形成具有实际灵敏度和无溶胀的复杂的抗蚀剂图案。

公开(公告)号：US06340772B1

公开(公告)日：2002-01-22

申请号：US09841313

申请日：2001-04-24

申请人： Tetsuya Toya ,  Hidetoshi Shirakura ,  Junichi Kon

发明人： Tetsuya Toya ,  Hidetoshi Shirakura ,  Junichi Kon

IPC分类号： C07C21100

摘要： Three processes are described for preparing (hetero)aromatic substituted benzene derivatives which comprise aromatization of cyclohexenone derivatives via (chloro)cyclohexadiene derivatives.

公开(公告)号：US08795951B2

公开(公告)日：2014-08-05

申请号：US12967615

申请日：2010-12-14

申请人： Junichi Kon

发明人： Junichi Kon

IPC分类号： G03F7/09 ,  G03F7/26

CPC分类号： G03F7/091 ,  G03F7/11 ,  G03F7/2059

摘要： A material for forming a resist sensitization film contains a metal salt, a resin and, a solvent. A method for producing a semiconductor device contains applying such material (or a resist) onto a processing surface so as to form a resist sensitization film or a resist film, applying a resist (or the aforementioned material) onto the resist sensitization film so as to form a resist film (or a resist sensitization film); exposing the resist film (or the resist film and the resist sensitization film) to exposure light, and developing the exposed resist film (or the exposed resist film and resist sensitization film) so as to form a resist pattern; and etching the processing surface using the resist pattern as a mask so as to pattern the processing surface.

摘要翻译： 用于形成抗蚀剂增感膜的材料含有金属盐，树脂和溶剂。 制造半导体器件的方法包括将这种材料（或抗蚀剂）施加到处理表面上以形成抗蚀剂增感膜或抗蚀剂膜，将抗蚀剂（或上述材料）施加到抗蚀剂增感膜上，以便 形成抗蚀剂膜（或抗蚀剂增感膜）; 将抗蚀剂膜（或抗蚀剂膜和抗蚀剂增感膜）暴露于曝光光，并使曝光的抗蚀剂膜（或曝光的抗蚀剂膜和抗蚀剂增感膜）显影以形成抗蚀剂图案; 并使用抗蚀剂图案作为掩模来蚀刻处理表面，以便对处理表面进行图案化。

公开(公告)号：US20130306102A1

公开(公告)日：2013-11-21

申请号：US13951803

申请日：2013-07-26

申请人： Shirou OZAKI ,  Masayuki TAKEDA ,  Norikazu NAKAMURA ,  Junichi KON

发明人： Shirou OZAKI ,  Masayuki TAKEDA ,  Norikazu NAKAMURA ,  Junichi KON

IPC分类号： H01L21/02

CPC分类号： H01L21/02057 ,  H01L21/0272 ,  H01L21/67057 ,  H01L29/66462

摘要： A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

摘要翻译： 制造半导体器件的方法包括：保持具有相对于垂直方向和水平方向倾斜的表面的半导体衬底; 并将半导体衬底浸入包含酸的清洗溶液中。