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    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER
    1.
    发明申请
    BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER 有权
    包含非压电层的大容量谐振谐振器

    公开(公告)号：US20120319530A1

    公开(公告)日：2012-12-20

    申请号：US13161946

    申请日：2011-06-16

    申请人： Dariusz BURAK ,  Jyrki KAITILA ,  Alexandre SHIRAKAWA ,  Martin Handtmann ,  Phil NIKKEL

    发明人： Dariusz BURAK ,  Jyrki KAITILA ,  Alexandre SHIRAKAWA ,  Martin Handtmann ,  Phil NIKKEL

    IPC分类号： H01L41/00

    CPC分类号： H03H9/173 ,  H03H9/585

    摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.

    摘要翻译： 在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

    Bulk acoustic resonator comprising non-piezoelectric layer
    4.
    发明授权
    Bulk acoustic resonator comprising non-piezoelectric layer 有权
    包含非压电层的体声波谐振器

    公开(公告)号：US08330325B1

    公开(公告)日：2012-12-11

    申请号：US13161946

    申请日：2011-06-16

    申请人： Dariusz Burak ,  Jyrki Kaitila ,  Alexandre Shirakawa ,  Martin Handtmann ,  Phil Nikkel

    发明人： Dariusz Burak ,  Jyrki Kaitila ,  Alexandre Shirakawa ,  Martin Handtmann ,  Phil Nikkel

    IPC分类号： H03H9/15 ,  H03H9/125

    CPC分类号： H03H9/173 ,  H03H9/585

    摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.

    摘要翻译： 在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

    Resonator structure and a filter comprising such a resonator structure
    6.
    发明授权
    Resonator structure and a filter comprising such a resonator structure 有权
    谐振器结构和包括这种谐振器结构的滤波器

    公开(公告)号：US06812619B1

    公开(公告)日：2004-11-02

    申请号：US10031579

    申请日：2002-01-17

    申请人： Jyrki Kaitila ,  Markku Ylilammi ,  Juha Ellä

    发明人： Jyrki Kaitila ,  Markku Ylilammi ,  Juha Ellä

    IPC分类号： H01I4108

    CPC分类号： H03H9/173 ,  H03H9/132

    摘要： A resonator structure (1200, 1300, 1400), where a certain wave mode is piezoelectrically excitable, comprises at least two conductor layers (110, 120) and at least one piezoelectric layer (110) in between the conductor layers, said conductor layers and piezoelectric layer extending over a first area of the resonator structure, which first area is a piezoelectrically excitable area of the resonator structure. The resonator structure is characterized in that it comprises a frame-like zone (2, 4) confining a center area (3) within the first area, a cut-off frequency of the piezoelectrically excited wave mode in the layer structure of the frame-like zone is different from that in the layer structure of the center area, and width of the frame-like zone and acoustical properties of the layer structure in the frame-like zone are arranged so that displacement relating to the piezoelectrically excited strongest resonance mode is substantially uniform in the center area of the resonator.

    摘要翻译： 一种其中一定波模式是可压电激发的谐振器结构（1200,1300,1400）包括至少两个导体层（110,120）和至少一个压电层（110），位于导体层之间，所述导体层和 压电层在谐振器结构的第一区域上延伸，该第一区域是谐振器结构的压电可激发区域。 谐振器结构的特征在于，其包括限制第一区域内的中心区域（3）的框架状区域（2,4），框架状区域的层结构中的压电激发波模式的截止频率， 与框状区域的层结构不同，框状区域的框状宽度和层结构的声学特性被布置成使得与压电激发的最强谐振模式有关的位移为 在谐振器的中心区域基本均匀。

    Monolithic FBAR duplexer and method of making the same
    7.
    发明授权
    Monolithic FBAR duplexer and method of making the same 有权
    单片FBAR双工器及其制作方法

    公开(公告)号：US06407649B1

    公开(公告)日：2002-06-18

    申请号：US09755954

    申请日：2001-01-05

    申请人： Pasi Tikka ,  Juha Ellä ,  Jyrki Kaitila

    发明人： Pasi Tikka ,  Juha Ellä ,  Jyrki Kaitila

    IPC分类号： H03H956

    CPC分类号： H03H9/706 ,  H03H9/0571 ,  Y10T29/42

    摘要： A monolithic bulk acoustic wave (BAW) duplexer, and a method for fabricating same, the duplexer having a, transmitter section as a first component filter and a receiver section as a second component filter, both component filters fabricated on a single substrate and both including at least one shunt BAW resonator and one series BAW resonator, each BAW resonator including a resonator section atop an isolation structure provided so as to separate the resonator section from the substrate, including: a patterned bottom electrode material for use as the bottom electrode of each of the resonators of the duplexer; a patterned piezoelectric material for use as the piezolayer of each of the resonators of the duplexer; a patterned top electrode material for use as the top electrode of each of the resonators of the duplexer; a tuning layer for the shunt resonator of each of the two component duplexer filters; and a tuning layer for both the series and shunt resonators of one of the two component duplexer filters. In some applications, each isolation structure is an acoustic mirror. Also in some applications, the duplexer further includes at least one planar spiral inductor provided in the course of depositing one or another layer of material in building up the duplexer, the planar spiral inductor having coils spiraling outward substantially in a plane from an innermost coil to an outermost coil.

    摘要翻译： 单片体声波（BAW）双工器及其制造方法，具有作为第一分量滤波器的发射机部分和作为第二分量滤波器的接收机部分的双工器，在单个基板上制造的两个部件滤波器， 至少一个并联BAW谐振器和一个串联BAW谐振器，每个BAW谐振器包括设置成将谐振器部分与衬底分离的隔离结构顶部的谐振器部分，包括：用作每个的底部电极的图案化底部电极材料 的双工器谐振器; 用作双工器的每个谐振器的压电层的图案化压电材料; 用作双工器的每个谐振器的顶电极的图案化顶电极材料; 用于两个组件双工器滤波器中的每一个的并联谐振器的调谐层; 以及用于两个组件双工器滤波器之一的串联和并联谐振器的调谐层。 在一些应用中，每个隔离结构都是声反射镜。 同样在一些应用中，双工器还包括至少一个平面螺旋电感器，该平面螺旋电感器设置在堆积双层器中的一个或另一个材料层的过程中，平面螺旋电感器具有基本上在从最内侧的线圈到 最外面的线圈。