公开(公告)号：US20140004489A1

公开(公告)日：2014-01-02

申请号：US13926146

申请日：2013-06-25

申请人： Jong-Phil KIM ,  Kwang-Il Kim

发明人： Jong-Phil KIM ,  Kwang-Il Kim

IPC分类号： G09B19/00

CPC分类号： G09B19/00

摘要： Disclosed are a method and apparatus for providing an emotion expression service using an emotion expression identifier. The method includes collecting emotion evaluations of users about content related to a word or a phrase, the emotion evaluations being performed by the users after the users view the content, and displaying an emotion expression identifier representing the collected emotion evaluations of the users in the vicinity of the word or the phrase. The method and apparatus enable a user to intuitively identify emotion expressions of other users (netizens) in relation to a word or phrase such on a Web page such as a portal site.

摘要翻译： 公开了一种使用情绪表达标识符来提供情绪表达服务的方法和装置。 该方法包括收集用户关于单词或短语相关内容的情绪评估，用户在观看内容之后由用户执行情绪评估，以及显示代表在附近的用户收集的情感评估的情感表达标识符 的词或短语。 该方法和装置使得用户能够直观地识别关于诸如门户网站的网页上的单词或短语的其他用户（网络）的情感表达。

公开(公告)号：US07606054B2

公开(公告)日：2009-10-20

申请号：US11701674

申请日：2007-02-02

申请人： Kwang-Il Kim

发明人： Kwang-Il Kim

IPC分类号： G11C15/00

CPC分类号： G11C15/00

摘要： A processor chip having a cache hit logic for determining whether data required by a processor is stored in a cache memory includes a dummy cell string that operates the same as a sense amplifier for sensing a tag address stored in a tag memory cell array and a comparison logic for determining whether the sensed tag address coincides with an input tag address, a dummy sense amplifier, and a dummy comparison logic. The processor chip having the cache hit logic improves the reliability of a hit signal and operation speed is not limited.

摘要翻译： 具有用于确定处理器所需的数据是否存储在高速缓冲存储器中的高速缓存命中逻辑的处理器芯片包括操作与读取放大器相同的虚拟单元串，用于感测存储在标签存储单元阵列中的标签地址和比较 用于确定所感测的标签地址是否与输入标签地址一致的逻辑，虚拟读出放大器和虚拟比较逻辑。 具有高速缓存命中逻辑的处理器芯片提高了命中信号的可靠性，并且操作速度不受限制。

公开(公告)号：US07563931B2

公开(公告)日：2009-07-21

申请号：US11708283

申请日：2007-02-20

申请人： Keun-Sik Kim ,  Kwang-Il Kim ,  Ki-Byung Chai

发明人： Keun-Sik Kim ,  Kwang-Il Kim ,  Ki-Byung Chai

IPC分类号： C07C209/48

CPC分类号： C07C213/02 ,  C07C2601/14 ,  C07C215/42 ,  C07C217/74

摘要： A process for the preparation of a compound of formula I, wherein R1 and R2 are ortho or para substituents, independently selected from the group consisting of hydrogen, hydroxyl, C1-C6 alkyl, C1-C6 alkoxy, C7-C9 aralkoxy, C2-C7 alkanoyloxy, C1-C6 alkylmercapto, halo and trifluoromethyl; R3 is hydrogen or C1-C6 alkyl; R4 is hydrogen, C1-C6 alkyl, formyl or C2-C7 alkanoyl; n is one of the integers 0, 1, 2, 3 or 4; and the dotted line represents optional olefinic unsaturation; comprising hydrogenating a compound of formula III, in the presence of a nickel or cobalt catalyst at a temperature of about 5° C. to 25° C.

摘要翻译： 一种制备式I化合物的方法，其中R 1和R 2是独立地选自氢，羟基，C 1 -C 6烷基，C 1 -C 6烷氧基，C 7 -C 9芳烷氧基，C 2 -C 6烷氧基， C7烷酰氧基，C1-C6烷基巯基，卤素和三氟甲基; R3是氢或C1-C6烷基; R4是氢，C1-C6烷基，甲酰基或C2-C7烷酰基; n是整数0,1,2,3或4之一; 并且虚线表示任选的烯属不饱和键; 包括在约5℃至25℃的温度下，在镍或钴催化剂的存在下氢化式III的化合物。

公开(公告)号：US07295735B2

公开(公告)日：2007-11-13

申请号：US10534588

申请日：2004-02-02

申请人： Kwang-Il Kim ,  Weon-Bae Kim ,  In-Sik Choi

发明人： Kwang-Il Kim ,  Weon-Bae Kim ,  In-Sik Choi

IPC分类号： G02B6/44

CPC分类号： G02B6/4422 ,  G02B6/441 ,  G02B6/4432 ,  G02B6/4433 ,  G02B6/4434

摘要： A method for producing an optical fiber cable which improves stability by attaching an Aramid yarn near the core in parallel to an axial direction of the optical cable and solves structural problems of the cable by soaking an Aramid yarn into an epoxy resin is disclosed. This optical cable producing method uses a tensile material for improvement of tensile property, and includes the steps of soaking the tensile material into an epoxy resin, and attaching the tensile material to the optical cable in parallel to the axial direction of the optical cable.

摘要翻译： 公开了一种光纤线缆的制造方法，其通过将芯线附近的芳族聚酰胺纱线平行于光缆的轴向方向提高了稳定性，并且通过将芳族聚酰胺纱线浸渍到环氧树脂中解决了电缆的结构问题。 该光缆制造方法使用拉伸材料来提高拉伸性能，并且包括将拉伸材料浸渍到环氧树脂中并且将拉伸材料平行于光缆的轴向连接到光缆的步骤。

公开(公告)号：US07116125B2

公开(公告)日：2006-10-03

申请号：US10898219

申请日：2004-07-26

申请人： Kwang-Il Kim

发明人： Kwang-Il Kim

IPC分类号： G01R31/02

CPC分类号： H01L22/34 ,  G01R31/2621 ,  G01R31/27

摘要： The present invention relates to a semiconductor test device which may use a leakage current and/or a compensation system of leakage current. The semiconductor test device, according to exemplary embodiments of the present invention, may include MOS transistors which may be fabricated in processes similar to those of the semiconductor device. The semiconductor test device may sense the leakage currents which may flow in the MOS transistors, may test whether the semiconductor device may be fabricated normally or abnormally, and may generate at least a normal or abnormal signal as a result. The leakage current compensation device may compensate for the leakage current which may flow in the semiconductor device in response to the normal or abnormal signal of the semiconductor test device. According to exemplary embodiments of the present invention, abnormally-fabricated MOS transistors may be tested and malfunctions of the semiconductor device may be reduced by the leakage current compensation device.

摘要翻译： 本发明涉及可以使用漏电流和/或漏电流补偿系统的半导体测试装置。 根据本发明的示例性实施例的半导体测试装置可以包括可以以类似于半导体器件的工艺制造的MOS晶体管。 半导体测试装置可以感测可能在MOS晶体管中流动的漏电流，可以测试半导体器件是否可以正常或异常地制造，并且因此可能至少产生正常或异常信号。 泄漏电流补偿装置可以补偿可能响应于半导体测试装置的正常或异常信号而在半导体器件中流动的漏电流。 根据本发明的示例性实施例，可以测试异常制造的MOS晶体管，并且可以通过漏电流补偿装置来减小半导体器件的故障。

公开(公告)号：US06881267B2

公开(公告)日：2005-04-19

申请号：US10771982

申请日：2004-02-03

申请人： Kwang-Il Kim

发明人： Kwang-Il Kim

IPC分类号： H01L21/027 ,  B05C11/10 ,  H01L21/00 ,  H01L21/312

CPC分类号： H01L21/6715 ,  B05C11/101 ,  H01L21/312

摘要： A photoresist supply apparatus is provided. The photoresist supply apparatus includes a lower photoresist sensor and an upper photoresist sensor respectively installed near the bottom and the top of a trap tank to detect a photoresist in the trap tank. A drain line is connected to an upper side of the trap tank to release air. A photoresist-blocking valve is installed at the drain line, the photoresist-blocking valve structured to be opened to release air or closed to prevent photoresist loss according to signals detected by the lower photoresist sensor and the upper photoresist sensor. While the photoresist is supplied into the trap tank, the photoresist-blocking valve is opened to release air. After the photoresist supply into the trap tank is completed, the photoresist-blocking valve is closed to prevent the loss of a large amount of the photoresist through the drain line.

摘要翻译： 提供光致抗蚀剂供应装置。 光致抗蚀剂供给装置包括分别安装在捕集罐的底部和顶部附近的下部光致抗蚀剂传感器和上部光致抗蚀剂传感器，以检测陷阱罐中的光致抗蚀剂。 排水管线连接到捕集罐的上侧以释放空气。 光阻隔离阀安装在排水管上，光致抗蚀剂阻挡阀被构造成打开以释放空气或关闭，以防止由下部光致抗蚀剂传感器和上部光致抗蚀剂传感器检测到的信号造成光致抗蚀剂损失。 当光致抗蚀剂被供应到陷阱槽中时，打开光致阻隔阀以释放空气。 在光刻胶供应到陷阱槽中完成之后，关闭光致阻隔阀，以防止通过漏极线损耗大量的光致抗蚀剂。

公开(公告)号：US20050030057A1

公开(公告)日：2005-02-10

申请号：US10898219

申请日：2004-07-26

申请人： Kwang-Il Kim

发明人： Kwang-Il Kim

IPC分类号： G01R31/26 ,  G01R31/27 ,  H01L21/66 ,  H01L21/822 ,  H01L23/544 ,  H01L27/04

CPC分类号： H01L22/34 ,  G01R31/2621 ,  G01R31/27

摘要： The present invention relates to a semiconductor test device which may use a leakage current and/or a compensation system of leakage current. The semiconductor test device, according to exemplary embodiments of the present invention, may include MOS transistors which may be fabricated in processes similar to those of the semiconductor device. The semiconductor test device may sense the leakage currents which may flow in the MOS transistors, may test whether the semiconductor device may be fabricated normally or abnormally, and may generate at least a normal or abnormal signal as a result. The leakage current compensation device may compensate for the leakage current which may flow in the semiconductor device in response to the normal or abnormal signal of the semiconductor test device. According to exemplary embodiments of the present invention, abnormally-fabricated MOS transistors may be tested and malfunctions of the semiconductor device may be reduced by the leakage. current compensation device.

摘要翻译： 本发明涉及可以使用漏电流和/或漏电流补偿系统的半导体测试装置。 根据本发明的示例性实施例的半导体测试装置可以包括可以以类似于半导体器件的工艺制造的MOS晶体管。 半导体测试装置可以感测可能在MOS晶体管中流动的漏电流，可以测试半导体器件是否可以正常或异常地制造，并且因此可能至少产生正常或异常信号。 泄漏电流补偿装置可以补偿可能响应于半导体测试装置的正常或异常信号而在半导体器件中流动的漏电流。 根据本发明的示例性实施例，可以测试异常制造的MOS晶体管，并且可以通过泄漏来减少半导体器件的故障。 电流补偿装置。

公开(公告)号：US5732561A

公开(公告)日：1998-03-31

申请号：US753331

申请日：1996-11-22

申请人： Kwang Il Kim

发明人： Kwang Il Kim

IPC分类号： F25D17/08 ,  F25D11/02 ,  F25D17/04 ,  F25D17/06 ,  F25D21/06 ,  F25D21/14 ,  F25D29/00

CPC分类号： F25D17/065 ,  F25D17/045 ,  F25D21/06 ,  F25D2317/0683 ,  F25D2400/04 ,  F25D2700/12 ,  F25D2700/122

摘要： A refrigerator includes refrigerating and freezing compartments and a cooling cycle mechanism having only one evaporator. When either of the compartments needs to be cooled, the cooling cycle mechanism is started-up and operated to cool the refrigerating compartment, but not the freezing compartment, until refrigerant pressure in the evaporator reaches a steady state condition. Then, if the freezing compartment needs cooling, it is cooled. Thereafter, if the refrigerating compartment needs cooling, it is cooled. During periods when neither of the compartments needs cooling, the cooling cycle mechanism is shut down, and air from the refrigerating compartment is conducted through the evaporator to defrost the evaporator.

摘要翻译： 冰箱包括冷藏室和冷冻室，以及仅具有一个蒸发器的冷却循环机构。 当任一个隔间需要冷却时，冷却循环机构启动并操作以冷却冷藏室而不是冷冻室，直到蒸发器中的制冷剂压力达到稳定状态。 然后，如果冷冻室需要冷却，则冷却。 此后，如果冷藏室需要冷却，则冷却。 在两个舱都不需要冷却的时段期间，冷却循环机构被关闭，并且来自冷藏室的空气通过蒸发器传导以使蒸发器除霜。

公开(公告)号：US07540251B2

公开(公告)日：2009-06-02

申请号：US10583703

申请日：2004-12-21

申请人： Woo-Chul Jung ,  Kwang-Il Kim ,  Young-Deog Kim ,  Heung-Rak Kim

发明人： Woo-Chul Jung ,  Kwang-Il Kim ,  Young-Deog Kim ,  Heung-Rak Kim

IPC分类号： B63B9/08

CPC分类号： C02F1/4674 ,  B63B17/00 ,  B63J4/00 ,  C02F2103/008 ,  C02F2201/4612 ,  C02F2201/46125 ,  C02F2209/006 ,  C02F2209/29 ,  C02F2209/42 ,  Y02W10/37

摘要： An electrolysis-type apparatus for treating ballast water using NaOCl and a method thereof is provided. The apparatus includes: a ballast tank; an electrolyzer; a first circulation pump; a second circulation pump; and a controller. The ballast tank is installed in a ship to store seawater. The electrolyzer is connected with the ballast tank and electrolyzes the seawater. The circulation pumps are installed to allow the ballast water to flow into the electrolyzer and to discharge the electrolyzed water containing NaOCl to the ballast tank. The controller supplies power to the electrolyzer so as to control an NaOCl density and controls the circulation pumps. The apparatus and the method safely treat the seawater. Thus, environment pollution and ecosystem destruction can be minimized.

摘要翻译： 提供了一种使用NaOCl处理压载水的电解型设备及其方法。 该装置包括：压载舱; 电解槽 第一循环泵; 第二循环泵; 和控制器。 压载舱安装在船上以储存海水。 电解槽与压载舱连接，电解海水。 安装循环泵以使压载水流入电解槽，并将含有NaOCl的电解水排放到压载舱。 控制器向电解槽供电，以控制NaOCl浓度并控制循环泵。 该设备和方法安全处理海水。 因此，环境污染和生态系统的破坏可以最小化。

公开(公告)号：US20070200606A1

公开(公告)日：2007-08-30

申请号：US11678238

申请日：2007-02-23

申请人： KWANG-IL KIM

发明人： KWANG-IL KIM

IPC分类号： H03K3/00

CPC分类号： H03K5/135 ,  H03K3/0375

摘要： A pulsed flip-flop capable of adjusting a pulse width according to an operating voltage includes: a flip-flop operating in synchronization with a pulse signal; a pulse generating circuit generating the pulse signal in response to a clock signal; and a pulse width control circuit reducing a width of the pulse signal generated by the pulse generating circuit when the operating voltage is lower than a reference voltage.

摘要翻译： 能够根据工作电压调整脉冲宽度的脉冲触发器包括：与脉冲信号同步工作的触发器; 脉冲发生电路，响应于时钟信号产生脉冲信号; 以及脉冲宽度控制电路，当所述工作电压低于参考电压时，减小由所述脉冲发生电路产生的脉冲信号的宽度。