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    METHODS AND APPARATUS OF CREATING AIRGAP IN DIELECTRIC LAYERS FOR THE REDUCTION OF RC DELAY
    4.
    发明申请
    METHODS AND APPARATUS OF CREATING AIRGAP IN DIELECTRIC LAYERS FOR THE REDUCTION OF RC DELAY 审中-公开
    用于减少RC延迟的电介质层中产生气泡的方法和装置

    公开(公告)号：US20110104891A1

    公开(公告)日：2011-05-05

    申请号：US12986809

    申请日：2011-01-07

    申请人： AMIR AL-BAYATI ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang David Cui ,  Mihaela Balseanu ,  Meiyee Maggie Le Shek ,  Li-Qun Xia

    发明人： AMIR AL-BAYATI ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang David Cui ,  Mihaela Balseanu ,  Meiyee Maggie Le Shek ,  Li-Qun Xia

    IPC分类号： H01L21/768

    CPC分类号： H01L21/7682 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76825 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76885

    摘要： A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the trenches with a conductive material, planarizing the conductive material to expose the first dielectric layer, depositing a dielectric barrier film on the conductive material and exposed first dielectric layer, depositing a hard mask layer over the dielectric barrier film, forming a pattern in the dielectric barrier film and the hard mask layer to expose selected regions of the substrate, oxidizing at least a portion of the first dielectric layer in the selected region of the substrate, removing oxidized portion of the first dielectric layer to form reversed trenches around the conductive material, and forming air gaps in the reversed trenches while depositing a second dielectric material in the reversed trenches.

    摘要翻译： 一种用于在互连结构的电介质材料中产生气隙的方法和装置。 一个实施例提供了一种用于形成半导体结构的方法，包括在衬底上沉积第一介电层，在第一介电层中形成沟槽，用导电材料填充沟槽，平坦化导电材料以暴露第一介电层， 在导电材料和暴露的第一电介质层上的阻挡膜，在介电阻挡膜上沉积硬掩模层，在介电阻挡膜和硬掩模层中形成图案，以暴露衬底的选定区域，氧化至少一部分 在衬底的选定区域中的第一介电层，去除第一电介质层的氧化部分以在导电材料周围形成反向沟槽，以及在反向沟槽中形成气隙，同时在反向沟槽中沉积第二电介质材料。

    METHODS TO PROMOTE ADHESION BETWEEN BARRIER LAYER AND POROUS LOW-K FILM DEPOSITED FROM MULTIPLE LIQUID PRECURSORS
    5.
    发明申请
    METHODS TO PROMOTE ADHESION BETWEEN BARRIER LAYER AND POROUS LOW-K FILM DEPOSITED FROM MULTIPLE LIQUID PRECURSORS 审中-公开
    促进多层液体前体沉积的阻挡层与多孔低K膜之间粘合的方法

    公开(公告)号：US20100015816A1

    公开(公告)日：2010-01-21

    申请号：US12173659

    申请日：2008-07-15

    申请人： Kelvin Chan ,  Kang Sub Yim ,  Alexandros T. Demos

    发明人： Kelvin Chan ,  Kang Sub Yim ,  Alexandros T. Demos

    IPC分类号： H01L21/31

    CPC分类号： H01L21/31633 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274

    摘要： A method for processing a substrate is provided, wherein a first organosilicon precursor, a second organosilicon precursor, a porogen, and an oxygen source are provided to a processing chamber. The first organosilicon precursor comprises compounds having generally low carbon content. The second organosilicon precursor comprises compounds having higher carbon content. The porogen comprises hydrocarbon compounds. RF power is applied to deposit a film on the substrate, and the flow rates of the various reactant streams are adjusted to change the carbon content as portions of the film are deposited. In one embodiment, an initial portion of the deposited film has a low carbon content, and is therefore oxide-like, while successive portions have higher carbon content, becoming oxycarbide-like. Another embodiment features no oxide-like initial portion. Post-treating the film generates pores in portions of the film having higher carbon content.

    摘要翻译： 提供一种处理基板的方法，其中第一有机硅前体，第二有机硅前体，致孔剂和氧源被提供到处理室。 第一有机硅前体包括具有通常低碳含量的化合物。 第二有机硅前体包括具有较高碳含量的化合物。 致孔剂包括烃化合物。 施加RF功率以在衬底上沉积膜，并且调节各种反应物流的流速以随着膜的部分沉积而改变碳含量。 在一个实施方案中，沉积膜的初始部分具有低碳含量，因此是氧化物，而连续部分具有较高的碳含量，变成碳氧化物。 另一个实施方案不具有类似氧化物的初始部分。 膜的后处理在具有较高碳含量的膜的部分中产生孔。

    Hermetic cap layers formed on low-k films by plasma enhanced chemical vapor deposition
    9.
    发明授权
    Hermetic cap layers formed on low-k films by plasma enhanced chemical vapor deposition 失效
    通过等离子体增强的化学气相沉积在低k膜上形成密封盖层

    公开(公告)号：US07285503B2

    公开(公告)日：2007-10-23

    申请号：US10873811

    申请日：2004-06-21

    申请人： Vu Ngoc Tran Nguyen ,  Bok Hoen Kim ,  Kang Sub Yim

    发明人： Vu Ngoc Tran Nguyen ,  Bok Hoen Kim ,  Kang Sub Yim

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/76831 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/0276 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829

    摘要： A method of forming a cap layer over a dielectric layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 Å or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O2), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.

    摘要翻译： 一种在衬底上的介电层上形成覆盖层的方法，包括由包括氧和四乙氧基硅烷在内的工艺气体形成等离子体，以及将所述覆盖层沉积在所述电介质层上，其中所述覆盖层包含约600或更小的厚度 ，压缩应力为200MPa以上。 另外，在衬底上的电介质层上形成覆盖层的方法，包括通过将约200mgm至约8000mgm的四乙氧基硅烷流动而形成工艺气体，约2000至约200sccm的氧（O 2） SUB>）和约2000sccm至约20000sccm的载气，从处理气体产生等离子体，其中一个或多个RF发生器为等离子体提供约50瓦到约100瓦的低频RF功率，并且约100 瓦特到等离子体的大约600瓦的高频RF功率，并且将覆盖层沉积在电介质层上。