摘要:
A structure useful for electrical interconnection comprises a substrate; a plurality of porous dielectric layers disposed on the substrate; an etch stop layer disposed between a first of the dielectric layers and a second of the dielectric layers; and at least one thin, tough, non-porous dielectric layer disposed between at least one of the porous dielectric layers and the etch stop layer. A method for forming the structure comprising forming a multilayer stack of porous dielectric layers on the substrate, the stack including the plurality of porous dielectric layers, and forming a plurality of patterned metal conductors within the multilayer stack. Curing of the multilayer dielectric stack may be in a single cure step in a furnace. The application and hot plate baking of the individual layers of the multi layer dielectric stack may be accomplished in a single spin-coat tool, without being removed, to fully cure the stack until all dielectric layers have been deposited.
摘要:
A semiconductor device includes a substrate, and a through electrode passing through the substrate. The semiconductor device has a pad region and a through electrode region. A pad covers the pad region, extends into the through electrode region, and delimits an opening in the through electrode region. A through electrode extends through the semiconductor substrate below the hole in the pad in the through region.
摘要:
The present invention is directed to flux compositions and uses thereof. One composition comprises an activator and a solvent being a glycerol ethoxylate with a molecular weight of 200-500. Another composition comprises an activator, a solvent being a glycerol ethoxylate with a molecular weight of 200-500 and an amine. A soldering method for joining objects is also provided, comprising the steps of applying a flux composition to at least a portion of one or more of the objects, and joining the objects.
摘要:
The present invention relates to a compressor in which a rotary member suspended on a stationary member is rotated to compress the refrigerant. The rotary member is suspended on a first stationary member and rotatably supported on a second stationary member spaced apart from the first stationary member, which achieves the structural stability and allows the components to be easily centered and assembled. A refrigerant suction passage and a refrigerant discharge passage are improved such that the refrigerant can be sucked and discharged without a valve.
摘要:
A wafer level stack structure, including a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, wherein the first wafer and the second wafer are stacked, and wherein the first wafer and the second wafer are coupled to each other. A system-in-package, including a wafer level stack structure including at least one first device chip with a first plurality of input/output (I/O) pads and at least one second device chip with a second plurality of I/O pads, and a common circuit board to which the wafer level stack structure is connected.
摘要:
Exemplary embodiments of the selective laser repair apparatus and method may allow the repair of metal bumps in a semiconductor device stack by applying a laser beam to a damaged and/or defective bump. Metal bumps may be repaired and individual chips and/or packages forming a device stack need not be separated. The operation of a control unit and a driving unit may position a laser unit such that a laser beam may be irradiated at the damaged and/or defective metal bump. An X-ray inspection unit may obtain information about the damaged and/or defective metal bump.
摘要:
The present invention provides a motor, comprising: a stator including a coil wiring portion to which power is supplied; a rotor, which includes conductive bars, flux barriers, and permanent magnets, and rotates through an interactive electromagnetic force between the conductive bars, flux barriers, and permanent magnets and the coil wiring portion of the stator; an integrated capacitor, which is electrically connected to the coil wiring portion and includes two capacitors connected to each other in parallel, an electrical switch serially connected to one of the two capacitors, and a casing on which the two capacitors and the electrical switch are securely mounted.
摘要:
Methods of forming an integrated circuit device include forming an interlayer dielectric layer on a first surface of a semiconductor substrate and then forming an interconnect hole that extends through the interlayer dielectric layer and into the semiconductor substrate. A first sidewall spacer layer is formed on a sidewall of the interconnect hole. The semiconductor substrate at a bottom of the interconnect hole is isotropically etched to define an undercut recess in the semiconductor substrate. This etching step is performed using the first sidewall spacer layer as an etching mask. The interconnect hole and the uncut recess are then filled with a through-via electrode. A second surface of the semiconductor substrate is removed for a sufficient duration to expose the uncut recess containing the through-via electrode.
摘要:
A method of forming a solder bump may involve forming a first photoresist pattern on a wafer having a pad. The first photoresist pattern may have an opening that exposes a portion of the pad. A first under bump metallurgy (UBM) layer may be formed on the pad, and a second UBM layer may be formed on the first photoresist pattern. A second photoresist pattern may be formed that exposes the first UBM layer. A solder bump may be formed in the opening. The second photoresist pattern and the first photoresist pattern may be removed using a stripper, thereby removing the second UBM layer by a lift-off method.
摘要:
A stack circuit member may include a first circuit member and a second circuit member. The first and the second circuit members may be electrically and mechanically connected together using a thermocompression bonding method. A photosensitive polymer layer may be interposed between the first circuit member and the second circuit member. A gap fill process and an electrical connection process may be performed at the same time.