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公开(公告)号：US20100311200A1
公开(公告)日：2010-12-09
申请号：US12777974
申请日：2010-05-11
申请人： Katsunori Hirota
发明人： Katsunori Hirota
IPC分类号： H01L31/18
CPC分类号： H01L27/14616 , H01L27/1462 , H01L27/14643 , H01L27/14689
摘要： A method of manufacturing a photoelectric conversion device, comprises forming a first insulating film on a semiconductor substrate, forming a gate electrode by forming an electrically conductive layer on the first insulating film and patterning the electrically conductive layer, etching an exposed surface of the first insulating film, forming a charge accumulation region of a photoelectric converter by implanting impurity ions of a first conductivity type into the semiconductor substrate through a thinned portion of the first insulating film formed by the etching, removing the thinned portion, forming a second insulating film covering the semiconductor substrate and the gate electrode, and forming a surface region of the photoelectric converter by implanting impurity ions of a second conductivity type opposite to the first conductivity type into the semiconductor substrate through the second insulating film.
摘要翻译： 一种光电转换装置的制造方法，其特征在于，在半导体基板上形成第一绝缘膜，在所述第一绝缘膜上形成导电层形成栅电极，对所述导电层进行图案化，蚀刻所述第一绝缘膜的露出面 薄膜，通过通过蚀刻形成的第一绝缘膜的薄化部分，将第一导电类型的杂质离子注入到半导体衬底中，形成光电转换器的电荷累积区域，去除该薄化部分，形成覆盖该第一绝缘膜的第二绝缘膜 半导体衬底和栅电极，并且通过将通过第二绝缘膜注入与第一导电类型相反的第二导电类型的杂质离子注入到半导体衬底中，形成光电转换器的表面区域。
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公开(公告)号：US08501520B2
公开(公告)日：2013-08-06
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L51/40
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译： 一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。
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公开(公告)号：US20110240835A1
公开(公告)日：2011-10-06
申请号：US13139588
申请日：2010-01-08
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14641 , H01L27/14643
摘要： A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要翻译： 光电转换装置包括n型表面区域，形成在表面区域下方的p型区域和形成在p型区域下面的n型掩埋层，其中，表面区域，p-型区域， 并且掩埋层形成掩埋光电二极管，并且表面区域的主要杂质的扩散系数小于掩埋层的主要杂质的扩散系数。
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公开(公告)号：US20100203667A1
公开(公告)日：2010-08-12
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L31/18 , H01L21/265
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译： 一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。
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公开(公告)号：US08293560B2
公开(公告)日：2012-10-23
申请号：US13172768
申请日：2011-06-29
申请人： Katsunori Hirota
发明人： Katsunori Hirota
IPC分类号： H01L21/00 , H01L31/0232
CPC分类号： H01L27/14616 , H01L27/1462 , H01L27/14643 , H01L27/14689
摘要： A method of manufacturing a photoelectric conversion device, comprises forming a first insulating film on a semiconductor substrate, forming a gate electrode by forming an electrically conductive layer on the first insulating film and patterning the electrically conductive layer, etching an exposed surface of the first insulating film, forming a charge accumulation region of a photoelectric converter by implanting impurity ions of a first conductivity type into the semiconductor substrate through a thinned portion of the first insulating film formed by the etching, removing the thinned portion, forming a second insulating film covering the semiconductor substrate and the gate electrode, and forming a surface region of the photoelectric converter by implanting impurity ions of a second conductivity type opposite to the first conductivity type into the semiconductor substrate through the second insulating film.
摘要翻译： 一种光电转换装置的制造方法，其特征在于，在半导体基板上形成第一绝缘膜，在所述第一绝缘膜上形成导电层形成栅电极，对所述导电层进行图案化，蚀刻所述第一绝缘膜的露出面 薄膜，通过通过蚀刻形成的第一绝缘膜的薄化部分，将第一导电类型的杂质离子注入到半导体衬底中，形成光电转换器的电荷累积区域，去除该薄化部分，形成覆盖该第一绝缘膜的第二绝缘膜 半导体衬底和栅电极，并且通过将通过第二绝缘膜注入与第一导电类型相反的第二导电类型的杂质离子注入到半导体衬底中，形成光电转换器的表面区域。
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公开(公告)号：US20110256660A1
公开(公告)日：2011-10-20
申请号：US13172768
申请日：2011-06-29
申请人： Katsunori Hirota
发明人： Katsunori Hirota
IPC分类号： H01L31/0232
CPC分类号： H01L27/14616 , H01L27/1462 , H01L27/14643 , H01L27/14689
摘要： A method of manufacturing a photoelectric conversion device, comprises forming a first insulating film on a semiconductor substrate, forming a gate electrode by forming an electrically conductive layer on the first insulating film and patterning the electrically conductive layer, etching an exposed surface of the first insulating film, forming a charge accumulation region of a photoelectric converter by implanting impurity ions of a first conductivity type into the semiconductor substrate through a thinned portion of the first insulating film formed by the etching, removing the thinned portion, forming a second insulating film covering the semiconductor substrate and the gate electrode, and forming a surface region of the photoelectric converter by implanting impurity ions of a second conductivity type opposite to the first conductivity type into the semiconductor substrate through the second insulating film.
摘要翻译： 一种光电转换装置的制造方法，其特征在于，在半导体基板上形成第一绝缘膜，在所述第一绝缘膜上形成导电层形成栅电极，对所述导电层进行图案化，蚀刻所述第一绝缘膜的露出面 薄膜，通过通过蚀刻形成的第一绝缘膜的薄化部分，将第一导电类型的杂质离子注入到半导体衬底中，形成光电转换器的电荷累积区域，去除该薄化部分，形成覆盖该第一绝缘膜的第二绝缘膜 半导体衬底和栅电极，并且通过将通过第二绝缘膜注入与第一导电类型相反的第二导电类型的杂质离子注入到半导体衬底中，形成光电转换器的表面区域。
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公开(公告)号：US08723285B2
公开(公告)日：2014-05-13
申请号：US13139588
申请日：2010-01-08
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14641 , H01L27/14643
摘要： A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要翻译： 光电转换装置包括n型表面区域，形成在表面区域下方的p型区域和形成在p型区域下面的n型掩埋层，其中，表面区域，p-型区域， 并且掩埋层形成掩埋光电二极管，并且表面区域的主要杂质的扩散系数小于掩埋层的主要杂质的扩散系数。
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公开(公告)号：US07993953B2
公开(公告)日：2011-08-09
申请号：US12777974
申请日：2010-05-11
申请人： Katsunori Hirota
发明人： Katsunori Hirota
IPC分类号： H01L21/00
CPC分类号： H01L27/14616 , H01L27/1462 , H01L27/14643 , H01L27/14689
摘要： A method of manufacturing a photoelectric conversion device, comprises forming a first insulating film on a semiconductor substrate, forming a gate electrode by forming an electrically conductive layer on the first insulating film and patterning the electrically conductive layer, etching an exposed surface of the first insulating film, forming a charge accumulation region of a photoelectric converter by implanting impurity ions of a first conductivity type into the semiconductor substrate through a thinned portion of the first insulating film formed by the etching, removing the thinned portion, forming a second insulating film covering the semiconductor substrate and the gate electrode, and forming a surface region of the photoelectric converter by implanting impurity ions of a second conductivity type opposite to the first conductivity type into the semiconductor substrate through the second insulating film.
摘要翻译： 一种光电转换装置的制造方法，其特征在于，在半导体基板上形成第一绝缘膜，在所述第一绝缘膜上形成导电层形成栅电极，对所述导电层进行图案化，蚀刻所述第一绝缘膜的露出面 薄膜，通过通过蚀刻形成的第一绝缘膜的薄化部分，将第一导电类型的杂质离子注入到半导体衬底中，形成光电转换器的电荷累积区域，去除该薄化部分，形成覆盖该第一绝缘膜的第二绝缘膜 半导体衬底和栅电极，并且通过将通过第二绝缘膜注入与第一导电类型相反的第二导电类型的杂质离子注入到半导体衬底中，形成光电转换器的表面区域。
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