公开(公告)号：US08262970B2

公开(公告)日：2012-09-11

申请号：US10599041

申请日：2005-03-08

申请人： Yoshitsugu Morita ,  Junji Nakanishi ,  Katsutoshi Mine

发明人： Yoshitsugu Morita ,  Junji Nakanishi ,  Katsutoshi Mine

IPC分类号： H01L23/29 ,  H01L21/56

CPC分类号： H01L21/566 ,  H01L23/296 ,  H01L23/3121 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device sealed in a cured silicone body by placing an unsealed semiconductor device into a mold and subjecting a curable liquid silicone composition that fills the spaces between the mold and the unsealed semiconductor device to compression molding under a predetermined molding temperature, wherein said curable liquid silicone composition has viscosity of 90 Pa·s or less at room temperature, a time interval from the moment directly after measurement of a torque with a curometer at the molding temperature to the moment when the torque reached 1 kgf·cm is not less than 1 min., while the time interval during which the torque grows from 1 kgf·cm to 5 kgf·cm is not more than 1 min.

摘要翻译： 一种制造半导体器件的方法，该半导体器件通过将未密封的半导体器件放置在模具中并将填充模具和非密封半导体器件之间的空间的可固化液体硅氧烷组合物在预定的成型温度下进行压缩成型而密封在固化的硅氧烷体中， 其中所述可固化液体硅氧烷组合物在室温下的粘度为90Pa·s以下，从成型温度下的立方微米的扭矩测定之后的时刻到扭矩达到1kgf·cm时的时间间隔为 不小于1分钟，扭矩从1 kgf·cm增加到5 kgf·cm的时间间隔不超过1分钟。

公开(公告)号：US20100155653A1

公开(公告)日：2010-06-24

申请号：US12714174

申请日：2010-02-26

申请人： Kazumi Nakayoshi ,  Hiroki Ishikawa ,  Ryoto Shima ,  Katsutoshi Mine

发明人： Kazumi Nakayoshi ,  Hiroki Ishikawa ,  Ryoto Shima ,  Katsutoshi Mine

IPC分类号： C09K5/00 ,  H01B1/22

CPC分类号： C08L83/04 ,  C08G77/12 ,  C08G77/20 ,  C08K9/04 ,  C09J183/04 ,  H05K3/321

摘要： A silver-based powder is surface-treated with an oxidation inhibitor by means of a mechanochemical reaction. A method of preparation of the silver-based powder includes using an organic solution of the oxidation inhibitor as a lubricating agent, applying mechanical energy to the silver-based powder, and subjecting the silver-based powder to surface treatment with said oxidation inhibitor by means of a mechanochemical reaction.

摘要翻译： 通过机械化学反应用氧化抑制剂对银基粉末进行表面处理。 制备银基粉末的方法包括使用氧化抑制剂的有机溶液作为润滑剂，向银基粉末施加机械能，并用所述氧化抑制剂对银基粉末进行表面处理 的机械化学反应。

公开(公告)号：US07651958B2

公开(公告)日：2010-01-26

申请号：US10584032

申请日：2004-12-07

申请人： Yoshitsuga Morita ,  Katsutoshi Mine ,  Junji Nakanishi ,  Hiroji Enami

发明人： Yoshitsuga Morita ,  Katsutoshi Mine ,  Junji Nakanishi ,  Hiroji Enami

IPC分类号： H01L21/31

CPC分类号： H01L23/296 ,  C08G77/12 ,  C08G77/20 ,  C08L83/04 ,  H01L21/566 ,  H01L23/3128 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/181 ,  C08L83/00 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/85

摘要： A method of manufacturing a semiconductor device sealed in a cured silicone body by placing a semiconductor device into a mold and subjecting a curable silicone composition that fills the spaces between said mold and said semiconductor device to compression molding, wherein the curable silicone composition comprises the following components: (A) an organopolysiloxane having at least two alkenyl groups per molecule; (B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule; (C) a platinum-type catalyst; and (D) a filler, wherein either at least one of components (A) and (B) contains a T-unit siloxane and/or Q-unit siloxane. By the utilization this method, a sealed semiconductor device is free of voids in the sealing material, and a thickness of the cured silicone body can be controlled.

摘要翻译： 一种制造半导体器件的方法，其通过将半导体器件放置在模具中并对填充所述模具和所述半导体器件之间的空间的可固化硅氧烷组合物进行压塑而密封在固化的硅氧烷体中，其中所述可固化有机硅组合物包含以下 组分：（A）每分子具有至少两个烯基的有机聚硅氧烷; （B）每分子具有至少两个与硅键合的氢原子的有机聚硅氧烷; （C）铂型催化剂; 和（D）填料，其中组分（A）和（B）中的至少一种含有T单元硅氧烷和/或Q-单元硅氧烷。 通过利用该方法，密封半导体器件在密封材料中没有空隙，并且可以控制固化的硅氧烷体的厚度。

公开(公告)号：US07534659B2

公开(公告)日：2009-05-19

申请号：US10521287

申请日：2003-07-14

申请人： Manabu Sutoh ,  Yoshito Ushio ,  Toyohiko Fujisawa ,  Katsutoshi Mine

发明人： Manabu Sutoh ,  Yoshito Ushio ,  Toyohiko Fujisawa ,  Katsutoshi Mine

IPC分类号： H01L21/00 ,  C08G77/12 ,  C08G77/20 ,  C08G77/04

CPC分类号： H01L21/6836 ,  C08L83/00 ,  C09J5/06 ,  C09J7/35 ,  C09J183/04 ,  C09J2201/128 ,  C09J2203/326 ,  C09J2483/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/29 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/29298 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/83855 ,  H01L2224/85207 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/0715 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/20753

摘要： A silicone-based adhesive sheet has either a layer of clay-like curable silicone composition on one side and a layer of slower curing clay-like curable silicone composition than the first composition layer on the other side, or a cured silicone layer on one side and a layer of clay-like curable silicone composition on the other side. The silicone-based adhesive sheet may be used in a method for bonding semiconductor chip and a chip attachment component. A semiconductor device may be prepared by the method.

摘要翻译： 硅酮类粘合片在一侧具有一层粘土状可固化硅酮组合物，另一侧具有比另一侧的第一组合物层更慢的固化粘土状可固化硅氧烷组合物层，或者一侧的固化的硅氧烷层 和另一侧的粘土状可固化硅氧烷组合物层。 硅酮类粘合片可以用于半导体芯片和芯片安装部件的接合方法。 可以通过该方法制备半导体器件。

公开(公告)号：US07074849B2

公开(公告)日：2006-07-11

申请号：US10822888

申请日：2004-04-13

申请人： Kazumi Nakayoshi ,  Katsutoshi Mine ,  Rikako Tazawa

发明人： Kazumi Nakayoshi ,  Katsutoshi Mine ,  Rikako Tazawa

IPC分类号： B05D3/02 ,  C08K9/06 ,  C08L83/05 ,  C08L83/06 ,  C08L83/07

CPC分类号： H01B1/22 ,  C08G77/045 ,  C08G77/12 ,  C08G77/14 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08G77/70 ,  C08K3/08 ,  C08K9/06 ,  C08L83/04 ,  C08L83/00 ,  C08L2666/54

摘要： The electrical properties, particularly contact resistance and volume resistivity, of materials prepared by curing organosiloxane compositions containing finely divided silver as the electroconductive filler are improved by treating the silver particles with an organosilicon compound prior to incorporating the particles into the organosiloxane composition.

公开(公告)号：US20060057779A1

公开(公告)日：2006-03-16

申请号：US10521287

申请日：2003-07-14

申请人： Manabu Sutoh ,  Yoshito Ushio ,  Toyohiko Fujisawa ,  Katsutoshi Mine

发明人： Manabu Sutoh ,  Yoshito Ushio ,  Toyohiko Fujisawa ,  Katsutoshi Mine

IPC分类号： H01L21/50

CPC分类号： H01L21/6836 ,  C08L83/00 ,  C09J5/06 ,  C09J7/35 ,  C09J183/04 ,  C09J2201/128 ,  C09J2203/326 ,  C09J2483/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/29 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/29298 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/83855 ,  H01L2224/85207 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/0715 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/20753

摘要： A silicone-based adhesive sheet has either a layer of clay-like curable silicone composition on one side and a layer of slower curing clay-like curable silicone composition than the first composition layer on the other side, or a cured silicone layer on one side and a layer of clay-like curable silicone composition on the other side. The silicone-based adhesive sheet may be used in a method for bonding semiconductor chip and a chip attachment component. A semiconductor device may be prepared by the method.

公开(公告)号：US20060047043A1

公开(公告)日：2006-03-02

申请号：US10536669

申请日：2003-11-17

申请人： Kazumi Nakayoshi ,  Hiroki Ishikawa ,  Ryoto Shima ,  Katsutoshi Mine

发明人： Kazumi Nakayoshi ,  Hiroki Ishikawa ,  Ryoto Shima ,  Katsutoshi Mine

IPC分类号： C08K3/22

CPC分类号： C08L83/04 ,  C08G77/12 ,  C08G77/20 ,  C08K9/04 ,  C09J183/04 ,  H05K3/321

摘要： A silver-based powder is surface-treated with an oxidation inhibitor by means of a mechanochemical reaction. A method of preparation of the silver-based powder includes using an organic solution of the oxidation inhibitor as a lubricating agent, applying mechanical energy to the silver-based powder, and subjecting the silver-based powder to surface treatment with said oxidation inhibitor by means of a mechanochemical reaction.

摘要翻译： 通过机械化学反应用氧化抑制剂对银基粉末进行表面处理。 制备银基粉末的方法包括使用氧化抑制剂的有机溶液作为润滑剂，向银基粉末施加机械能，并用所述氧化抑制剂对银基粉末进行表面处理 的机械化学反应。

公开(公告)号：US06720083B2

公开(公告)日：2004-04-13

申请号：US10103456

申请日：2002-03-20

申请人： Kimio Yamakawa ,  Minoru Isshiki ,  Katsutoshi Mine

发明人： Kimio Yamakawa ,  Minoru Isshiki ,  Katsutoshi Mine

IPC分类号： B32B2520

CPC分类号： H01L24/32 ,  C08K7/18 ,  C08K2201/016 ,  C08L2666/54 ,  C09J11/02 ,  C09J183/04 ,  H01L21/563 ,  H01L24/83 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/83051 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  Y10T428/31511 ,  Y10T428/31663 ,  H01L2924/00

摘要： An adhesive composition for bonding of semiconductor chips to their chip mounting components comprising a curable polymer composition that comprises a spherical filler having an average particle size from greater than 100 to 1,000 &mgr;m and an aspect ratio of 1 to 1.5. Semiconductor devices according to this invention are characterized in that a semiconductor chip therein is bonded to the mounting component for said chip by the aforementioned adhesive.

摘要翻译： 一种用于将半导体芯片粘合到其芯片安装部件上的粘合剂组合物，其包含可固化聚合物组合物，其包含平均粒度大于100至1,000μm，长宽比为1至1.5的球形填料。 根据本发明的半导体器件的特征在于，其中的半导体芯片通过上述粘合剂结合到用于所述芯片的安装部件。

公开(公告)号：US06498400B2

公开(公告)日：2002-12-24

申请号：US09812860

申请日：2001-03-21

申请人： Kimio Yamakawa ,  Minoru Isshiki ,  Yoshiko Otani ,  Katsutoshi Mine

发明人： Kimio Yamakawa ,  Minoru Isshiki ,  Yoshiko Otani ,  Katsutoshi Mine

IPC分类号： H01L2328

CPC分类号： H01L24/83 ,  C09J7/22 ,  C09J7/35 ,  C09J2201/128 ,  C09J2483/00 ,  H01L24/29 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/8388 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  Y10T428/28 ,  Y10T428/2813 ,  Y10T428/2848 ,  H01L2924/00014 ,  H01L2924/0715 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A semiconductor device comprising a semiconductor element; a substrate; and a hot-melt adhesive sheet bonding the semiconductor element to the substrate, wherein the hot-melt adhesive sheet comprises a spacer having the form of a sheet and a hot melt adhesive on both sides of the spacer. A semiconductor device comprising a semiconductor element; a substrate; and a hot-melt adhesive sheet bonding the semiconductor element to the substrate, wherein the hot-melt adhesive sheet comprises a mixture of a hot melt adhesive and a spacer, wherein the adhesive is selected from a silicone-modified epoxy resin adhesive, a silicone adhesive, and a silicone-modified polyimide adhesive, and the spacer has the form of particles.

摘要翻译： 一种半导体器件，包括半导体元件; 底物; 以及将所述半导体元件接合到所述基板的热熔粘合片，其中所述热熔粘合片包括在所述间隔件的两侧上具有片状的形式的隔离物和热熔粘合剂。 一种半导体器件，包括半导体元件; 底物; 以及将所述半导体元件接合到所述基板的热熔粘合片，其中所述热熔粘合片包括热熔粘合剂和间隔物的混合物，其中所述粘合剂选自硅氧烷改性的环氧树脂粘合剂，硅树脂 粘合剂和硅氧烷改性的聚酰亚胺粘合剂，并且间隔物具有颗粒的形式。

公开(公告)号：US06448175B1

公开(公告)日：2002-09-10

申请号：US09656728

申请日：2000-09-07

申请人： Akihiko Kobayashi ,  Katsutoshi Mine ,  Takashi Nakamura ,  Motoshi Sasaki ,  Kiyotaka Sawa

发明人： Akihiko Kobayashi ,  Katsutoshi Mine ,  Takashi Nakamura ,  Motoshi Sasaki ,  Kiyotaka Sawa

IPC分类号： H01L214763

CPC分类号： H01L21/316

摘要： To provide a method for forming insulating thin films that can induce condensation of silanol and dehydration to a high degree at or near ambient pressure. An interlevel dielectric layer is formed on a semiconductor substrate by coating hydrogen silsesquioxane resin onto the substrate and curing the hydrogen silsesquioxane resin to produce an interlevel dielectric layer. This interlevel dielectric layer is then heated at a pressure from 1 to 1,000 torr at a temperature from 150 to 550° C.

摘要翻译： 提供一种形成绝缘薄膜的方法，该方法可以在环境压力或接近环境压力的情况下高度地引起硅烷醇的冷凝和脱水。通过将氢倍半硅氧烷树脂涂覆到基底上并固化氢倍半硅氧烷，形成在半导体衬底上的层间电介质层 树脂以产生层间介电层。 然后在150至550℃的温度下，将该层间电介质层在1至1000托的压力下加热。