Thermal oxide film formation method for silicon single crystal wafer
    2.
    发明授权
    Thermal oxide film formation method for silicon single crystal wafer 有权
    硅单晶晶片的热氧化膜形成方法

    公开(公告)号:US09171737B2

    公开(公告)日:2015-10-27

    申请号:US13824028

    申请日:2011-10-06

    IPC分类号: H01L21/316 H01L21/02

    摘要: Disclosed is a method of forming a thermal oxide film on a silicon single crystal wafer, which includes throwing the silicon single wafer into a heat treatment furnace; elevating temperature of the heat treatment furnace up to a temperature T1 where a thermal oxide film is formed to form a thermal oxide film having a thickness d1; subsequently lowering the temperature of the heat treatment furnace down to a temperature lower than the temperature T1; and thereafter elevating the temperature of the heat treatment furnace up to a temperature T2 higher than the temperature T1 to additionally form a thermal oxide film having a thickness d2 thicker than the thickness d1. Thus, there is provided a thermal oxide film formation method to suppress occurrence of slip dislocation and/or crack of the silicon single wafer during formation of the thermal oxide film.

    摘要翻译: 公开了在硅单晶晶片上形成热氧化膜的方法,其包括将硅单晶片投掷到热处理炉中; 将热处理炉的升温至达到形成热氧化膜的温度T1,形成厚度为d1的热氧化膜; 随后将热处理炉的温度降低到低于温度T1的温度; 然后将热处理炉的温度升高到高于温度T1的温度T2,以另外形成厚度d2厚于厚度d1的热氧化膜。 因此,提供了一种热氧化膜形成方法,以在形成热氧化膜期间抑制硅单晶片的滑移位错和/或裂纹的发生。

    Outer member of constant speed universal joint
    3.
    发明授权
    Outer member of constant speed universal joint 有权
    恒速万向节的外部构件

    公开(公告)号:US08673092B2

    公开(公告)日:2014-03-18

    申请号:US13144105

    申请日:2010-01-14

    IPC分类号: F16D3/00 C22C38/00

    摘要: An outer member of a constant velocity universal joint suppresses occurrences of cracking in a joining portion and has stable quality. The outer member includes a cup section having track grooves formed therein, and a shaft section having one end coupled to a bottom portion of the cup section. By joining members having different carbon contents and performing induction hardening on the members, a hardening heat-affected portion affected by the induction hardening, a hardening heat-unaffected portion unaffected by the induction hardening, a joining heat-affected portion affected by heat generated during the joining, and a joining heat-unaffected portion unaffected by the heat generated during the joining are formed. A martensitic structure is eliminated from the hardening heat-unaffected portion of the high carbon content member and is the joining heat-affected portion at an end portion including a joining end surface that is to be joined to the low carbon content member.

    摘要翻译: 等速万向接头的外部构件抑制接合部分的裂纹发生,质量稳定。 外部构件包括具有形成在其中的轨道槽的杯部分和具有联接到杯部分的底部的一端的轴部分。 通过将具有不同碳含量并且对构件进行感应淬火的构件连接,受到感应淬火影响的硬化热影响部分,不受感应淬火影响的硬化热不受影响部分,受热感应部分影响的接合热影响部分 形成不受接合期间产生的热影响的接合热不受影响部分。 马氏体组织从高碳含量构件的硬化热不受影响部分消除,并且是在包括要与低碳含量构件接合的接合端面的端部处的接合热影响部分。

    Composite integrated semiconductor device
    5.
    发明授权
    Composite integrated semiconductor device 有权
    复合集成半导体器件

    公开(公告)号:US07948725B2

    公开(公告)日:2011-05-24

    申请号:US12071604

    申请日:2008-02-22

    IPC分类号: H02H9/00

    摘要: A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating circuit attenuates the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.

    摘要翻译: 复合集成半导体器件。 在一个实施例中,输入浪涌/噪声吸收电路从输入信号吸收浪涌,衰减电路衰减输入信号,电信号转换电路将输入信号转换成输出信号。 输入浪涌/噪声吸收电路,衰减电路和电信号转换电路一起形成一个单元,并且多个这些单元并联在一个半导体衬底中以形成复合集成半导体器件,从而减少 安装在印刷电路板上的分立组件的数量。

    FIXED UNIFORM-MOTION UNIVERSAL JOINT
    6.
    发明申请
    FIXED UNIFORM-MOTION UNIVERSAL JOINT 有权
    固定均匀运动通用接头

    公开(公告)号:US20110065519A1

    公开(公告)日:2011-03-17

    申请号:US12991480

    申请日:2009-05-28

    IPC分类号: F16D3/223

    摘要: Provided is a fixed type constant velocity universal joint of an eight-ball undercut-free type, which is capable of achieving an improvement of torque capacity at a high operating angle while ensuring durability at the time of a low operating angle. In the fixed type constant velocity universal joint of the eight-ball undercut-free type, a center of a track groove (32) of an outer joint member and a center of a track groove (35) of an inner joint member are separated from a joint center plane (P) respectively to both sides in an axial direction, and are offset to be positioned away from a joint center axis (X) to a radially opposite side relative to the track grooves (35). When Rt represents a distance between a center of a ball (37) and the center of the track groove (32) of the outer joint member, and F represents an axial distance between the joint center plane (P) and the center of the track groove (32) of the outer joint member, a ratio R1 between F and Rt is set to satisfy 0.061≦R1≦0.087, and, when fr represents a radial offset amount as a distance between the joint center axis (X) and the center of the track groove (32) of the outer joint member, a ratio R3 between fr and Rt is set to satisfy 0.07≦R3≦0.19.

    摘要翻译: 本发明提供一种八球无切削型的固定式等速万向接头,其能够在确保低操作角度下的耐久性的同时,在高操作角度下实现扭矩容量的提高。 在八球无切削型的固定式等速万向接头中,外接头构件的轨道槽(32)的中心和内接头构件的轨道槽(35)的中心与 相对于轨道槽(35)分别向联轴器中心轴线(X)延伸到径向相对的一侧。 当Rt表示球(37)的中心与外侧接头构件的轨道槽(32)的中心之间的距离,F表示接头中心面(P)与轨道的中心之间的轴向距离 外侧接头构件的槽(32),将F和Rt之间的比率R1设定为满足0.061≤n1E; R1≦̸ 0.087,并且当fr表示作为接头中心轴线(X)和 外侧接头构件的轨道槽(32)的中心,fr和Rt之间的比率R3设定为满足0.07≦̸ R3≦̸ 0.19。

    Epoxy resin composition
    7.
    发明授权
    Epoxy resin composition 失效
    环氧树脂组合物

    公开(公告)号:US07727426B2

    公开(公告)日:2010-06-01

    申请号:US11991299

    申请日:2006-08-23

    IPC分类号: F21V9/00 H01L27/15 C08F20/00

    CPC分类号: C08G59/4215

    摘要: Disclosed is an epoxy resin composition which is solid at ordinary room temperature, cures with excellent light resistance and heat resistance and minimal shrinkage, and is useful for encapsulating LEDs. The epoxy resin composition is characterized by comprising as an essential component an epoxy resin having an epoxy equivalent of 300-1000 g/eq and a softening point of 65-110° C. obtained by reacting a nonaromatic polycarboxylic acid (A) having an acid value of 100-250 mgKOH/g with a nonaromatic epoxy resin (B) having an epoxy equivalent of 100-400 g/eq. The nonaromatic polycarboxylic acid (A) may be obtained by reacting 1,4-cyclohexanedimethanol, 2,2-bis(4-hydroxycyclohexyl)propane, or 3,9-bis(1,1-dimethyl-2-hydroxyethyl)-2,4,8,10-tetraoxaspiro[5,5]undecane with methylhexahydrophthalic acid or hexahydrophthalic acid.

    摘要翻译: 公开了在常温下为固体的环氧树脂组合物,具有优异的耐光性和耐热性和最小的收缩率,并且可用于封装LED。 环氧树脂组合物的特征在于,通过使具有酸的非芳香族多元羧酸(A)反应,得到环氧当量为300〜1000g / eq,软化点为65〜110℃的环氧树脂作为必要成分 与环氧当量为100-400g / eq的非芳族环氧树脂(B)的值为100-250mgKOH / g。 非芳族多元羧酸(A)可以通过使1,4-环己烷二甲醇,2,2-双(4-羟基环己基)丙烷或3,9-双(1,1-二甲基-2-羟乙基)-2, 4,8,10-四氧杂螺[5,5]十一烷与甲基六氢邻苯二甲酸或六氢邻苯二甲酸。

    MAGNESIUM ALLOY FOR CASTING AND MAGNESIUM-ALLOY CAST PRODUCT
    8.
    发明申请
    MAGNESIUM ALLOY FOR CASTING AND MAGNESIUM-ALLOY CAST PRODUCT 审中-公开
    镁合金铸造和镁合金铸造产品

    公开(公告)号:US20100119405A1

    公开(公告)日:2010-05-13

    申请号:US12596810

    申请日:2008-04-14

    IPC分类号: C22C23/00

    CPC分类号: C22C23/00 B22D21/007

    摘要: A magnesium alloy for casting according to the present invention is characterized in that, when the entirety is taken as 100% by mass, it includes copper (Cu) in an amount of from 1% by mass or more to 5% by mass or less, calcium (Ca) in an amount of from 0.1% by mass or more to 5% by mass or less, silver (Ag) in an amount of from 0.1% by mass or more to 5% by mass or less, and the balance comprising magnesium (Mg) and inevitable impurities.By means of including Cu and Ca, crystallized substances of Mg—Ca compounds crystallize in crystalline grain boundaries between Mg crystalline grains as three-dimensionally mesh shapes, along with Mg—Cu compounds. By means of the three-dimensionally mesh constructions, grain-boundary sliding, which becomes active especially when becoming high temperature, is suppressed, and thereby high-temperature strength and creep resistance at high temperature improve. Moreover, by means of the Ag addition, the Mg crystalline grains become micro-fine and thereby the three-dimensionally mesh constructions, whose continuities are high and which are fine, are formed. In addition, it is less likely that Ag affects the heat conductivity of magnesium alloy adversely.

    摘要翻译: 根据本发明的铸造用镁合金的特征在于,当全部为100质量%时,其包含1质量%以上5质量%以下的铜(Cu) ,钙(Ca)的量为0.1质量%以上至5质量%以下,银(Ag)的含量为0.1质量%以上且5质量%以下,余量 包括镁(Mg)和不可避免的杂质。 通过包括Cu和Ca,Mg-Ca化合物的结晶物质与Mg-Cu化合物一起作为三维网格形状在Mg晶粒之间的结晶晶界中结晶。 通过三维网状结构,能够抑制特别是在高温时变得活跃的晶界滑动,从而提高高温下的高温强度和耐蠕变性。 此外,通过Ag添加,Mg晶粒变得微细,从而形成连续性高且细小的三维网状结构。 此外,Ag不太可能不利地影响镁合金的导热性。

    Method for Producing Soi Wafer
    9.
    发明申请
    Method for Producing Soi Wafer 有权
    生产硅晶片的方法

    公开(公告)号:US20090280620A1

    公开(公告)日:2009-11-12

    申请号:US12226264

    申请日:2007-04-23

    IPC分类号: H01L21/782

    摘要: The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1×1012 atoms/cm2 or more and less than 1×1015 atoms/cm2. As a result, there may be provided a method for producing an SOI wafer having sufficient gettering ability while the suppression of leak failure, degradation of oxide dielectric breakdown voltage or the like is provided.

    摘要翻译: 本发明是一种制造SOI晶片的方法,其至少包括通过离子注入从基底晶片或接合晶片的一个表面在硅中电惰性的中性元件形成离子注入损伤层的步骤,其中离子 以1×10 12原子/ cm 2以上且小于1×10 15原子/ cm 2的剂量进行形成离子注入损伤层的工序。 结果,可以提供一种制造具有足够的吸气能力的SOI晶片的方法,同时提供泄漏故障的抑制,氧化物介质击穿电压的劣化等。

    Image forming apparatus and image forming method
    10.
    发明授权
    Image forming apparatus and image forming method 有权
    图像形成装置及图像形成方法

    公开(公告)号:US07607656B2

    公开(公告)日:2009-10-27

    申请号:US11638418

    申请日:2006-12-14

    申请人: Kazuhiko Yoshida

    发明人: Kazuhiko Yoshida

    IPC分类号: B65H3/52

    摘要: An image forming apparatus includes: an image forming part; a sheet container that contains sheets fed to the image forming part in a stacked state; a feed roller that feeds the sheet from the sheet container; a separation member in press-contact with the feed roller that separates the sheet at a contact point formed between the feed roller and the separation member; and a press-contact force reducing unit that reduces a press contact force of the separation member to the feed roller while maintaining an approximately constant sheet separating force with the separation member.

    摘要翻译: 图像形成装置包括:图像形成部; 纸张容器,其包含以堆叠状态馈送到图像形成部分的纸张; 从片材容器供给片材的进料辊; 与所述进给辊压接的分离构件,所述分离构件在所述进给辊和所述分离构件之间形成的接触点处分离所述薄片; 以及按压接触力减小单元,其将分离构件的压力接触力降低到进给辊,同时保持与分离构件大致恒定的片材分离力。