公开(公告)号：US20200064480A1

公开(公告)日：2020-02-27

申请号：US16540189

申请日：2019-08-14

Applicant: Naoki FUKUOKA ,  Yoshihiko MIKI ,  Kazuhiro YONEDA ,  Toshiyuki IKEOH

Inventor： Naoki FUKUOKA ,  Yoshihiko MIKI ,  Kazuhiro YONEDA ,  Toshiyuki IKEOH

IPC: G01S17/89 ,  G01S7/481 ,  G02B26/08 ,  G02B26/10 ,  G02B3/00 ,  G02B27/48

Abstract: An optical device according to an embodiment of the present disclosure includes a light source in which a plurality of light emitting elements are arranged at a predetermined distance, an optical system configured to convert light beams from the plurality of light emitting elements into line light beams, and a light deflection element configured to deflect each of the line light beams. Each of the line light beams is caused to be incident on the light deflection element such that a longitudinal direction of each of the light beams is aligned with a direction of a rotating axis of the light deflection element.

公开(公告)号：US20200004127A1

公开(公告)日：2020-01-02

申请号：US16442925

申请日：2019-06-17

Applicant: Kazuhiro Yoneda ,  Yoshihiko Miki ,  Naoki Fukuoka

Inventor： Kazuhiro Yoneda ,  Yoshihiko Miki ,  Naoki Fukuoka

IPC: G03B21/20 ,  G02B27/48 ,  H04N9/31 ,  G03B21/56

Abstract: There is provided an improved light source including a plurality of light emitting elements in a surface. An arrangement of the plurality of light emitting elements fulfills, in an assumed projection area, an element interval at which irradiation light beams of the plurality of light emitting elements overlaps, and fulfills an element interval at which a speckle pattern of each of the irradiation light beams obtained in the assumed projection area is different for each of the irradiation light beams.

公开(公告)号：US10078010B2

公开(公告)日：2018-09-18

申请号：US14978172

申请日：2015-12-22

Applicant: Katsuhiko Aisu ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Yoshinori Ueda ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

Inventor： Katsuhiko Aisu ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Yoshinori Ueda ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

IPC: G01J1/44 ,  H04N5/361 ,  H04N5/365 ,  H04N5/378

CPC classification number: G01J1/44 ,  G01J2001/444 ,  G01J2001/4473 ,  H04N5/361 ,  H04N5/3655 ,  H04N5/378

Abstract: A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.

公开(公告)号：US09923019B2

公开(公告)日：2018-03-20

申请号：US14935973

申请日：2015-11-09

Applicant: Takaaki Negoro ,  Yoshinori Ueda ,  Katsuyuki Sakurano ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuhiko Aisu

Inventor： Takaaki Negoro ,  Yoshinori Ueda ,  Katsuyuki Sakurano ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuhiko Aisu

IPC: H01L31/0224 ,  H04N5/378 ,  H04N5/361 ,  H01L31/0352 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14681 ,  H01L27/14612

Abstract: A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.

公开(公告)号：US09571770B2

公开(公告)日：2017-02-14

申请号：US13745197

申请日：2013-01-18

Applicant: Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune ,  Hirofumi Watanabe ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Takaaki Negoro

Inventor： Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune ,  Hirofumi Watanabe ,  Kazuhiro Yoneda ,  Katsuhiko Aisu ,  Takaaki Negoro

IPC: H04N5/378 ,  H01L27/144

CPC classification number: H04N5/378 ,  H01L27/144

Abstract: A sense circuit includes a differential amplifier circuit including an inverting input section, a non-inverting input section and an output section, an electrical capacitor connected between the inverting input section and the output section, and a field effect transistor including a source, a drain, and a gate. One of the source and the drain is connected to the inverting input section, and the other of the source and the drain is connected to the output section. A reference potential is supplied to the non-inverting input section, and an output section of a photoelectric conversion cell having an added switching function is connected to the inverting input section.

Abstract translation: 感测电路包括差分放大器电路，其包括反相输入部分，非反相输入部分和输出部分，连接在反相输入部分和输出部分之间的电容器，以及场效应晶体管，其包括源极，漏极 ，和一个门。 源极和漏极之一连接到反相输入部分，源极和漏极中的另一个连接到输出部分。 参考电位被提供给非反相输入部分，并且具有增加的开关功能的光电转换单元的输出部分连接到反相输入部分。

公开(公告)号：US20160027835A1

公开(公告)日：2016-01-28

申请号：US14788991

申请日：2015-07-01

Applicant: Kazuhiro Yoneda ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Katsuhiko Hyogo ,  Yasukazu Nakatani ,  Katsuyuki Sakurano

Inventor： Kazuhiro Yoneda ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Katsuhiko Hyogo ,  Yasukazu Nakatani ,  Katsuyuki Sakurano

IPC: H01L27/146 ,  H04N5/341 ,  H04N3/14

CPC classification number: H04N5/369 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643

Abstract: An imaging device having phototransistors in photodetectors of pixels is disclosed. The imaging device includes an implanted electrode configured to separate the pixels, a first emitter disposed at a position adjacent to the implanted electrode, and a second emitter disposed such that a distance from the implanted electrode to the second emitter is longer than a distance from the implanted electrode to the first emitter.

Abstract translation: 公开了一种在像素的光电检测器中具有光电晶体管的成像装置。 成像装置包括被配置为分离像素的植入电极，设置在与植入电极相邻的位置处的第一发射体和布置成使得从注入电极到第二发射体的距离比距离植入电极 植入电极到第一发射极。

公开(公告)号：US08933471B2

公开(公告)日：2015-01-13

申请号：US13488987

申请日：2012-06-05

Applicant: Keiko Kurata ,  Noriyuki Matsusue ,  Kazuhiro Yoneda

Inventor： Keiko Kurata ,  Noriyuki Matsusue ,  Kazuhiro Yoneda

IPC: H01L29/20 ,  H01L33/00 ,  H01L29/18 ,  H01L29/08 ,  H01L21/00 ,  H01L51/40 ,  H01J1/62 ,  H01J63/04 ,  H01L27/32 ,  H05B33/02 ,  H05B33/10

CPC classification number: H01L27/3211 ,  H05B33/02 ,  H05B33/10

Abstract: An organic EL panel includes reflective electrodes, a transparent electrode, organic light-emitting layers, and functional layers that are each provided between a corresponding one of the reflective electrodes and a corresponding one of the respective organic light-emitting layers. The film thicknesses of the respective functional layers of R, G, and B colors are each 60 nm or less such that a local maximum of light-emitting efficiency for a corresponding color is exhibited, and are substantially equal to each other. The optical distances between the respective organic light-emitting layers of the R, G, and B colors and the respective reflective electrodes are each 100 nm or less, and are substantially equal to each other.

Abstract translation: 有机EL面板包括反射电极，透明电极，有机发光层和功能层，其各自设置在相应的一个反射电极和相应的一个有机发光层之间。 R，G，B各功能层的膜厚分别为60nm以下，使得表现出相应颜色的发光效率的局部最大值，并且基本相同。 R，G，B各自的有机发光层与各反射电极之间的光学距离分别为100nm以下，基本相等。

公开(公告)号：US20140203271A1

公开(公告)日：2014-07-24

申请号：US14241128

申请日：2012-07-17

Applicant: Kazuhiro Yoneda ,  Keiko Kurata ,  Noriyuki Matsusue

Inventor： Kazuhiro Yoneda ,  Keiko Kurata ,  Noriyuki Matsusue

IPC: H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC classification number: H01L51/5275 ,  H01L27/3211 ,  H01L51/5265 ,  H01L51/56

Abstract: An organic light-emitting panel includes a reflective electrode, a functional layer, having a single or multi-layer structure, located on the reflective electrode, an organic light-emitting layer located on the functional layer, a transparent electrode located above the organic light-emitting layer, a low refractive index layer located on the transparent electrode, and a first thin-film sealing layer located on the low refractive index layer. The low refractive index layer has a lower refractive index than both the transparent electrode and the first thin-film sealing layer. Difference between respective refractive indices of the low refractive index layer and the transparent electrode is 0.4-1.1. Difference between respective refractive indices of the low refractive index layer and the first thin-film sealing layer is 0.1-0.8. The low refractive index layer has thickness of 20-130 nm.

Abstract translation: 有机发光面板包括反射电极，具有单层或多层结构的功能层，位于反射电极上，位于功能层上的有机发光层，位于有机光上方的透明电极 位于透明电极上的低折射率层和位于低折射率层上的第一薄膜密封层。 低折射率层的折射率低于透明电极和第一薄膜密封层。 低折射率层和透明电极的折射率之差为0.4-1.1。 低折射率层与第一薄膜密封层的折射率之差为0.1-0.8。 低折射率层的厚度为20-130nm。

公开(公告)号：US08680542B2

公开(公告)日：2014-03-25

申请号：US13287526

申请日：2011-11-02

Applicant: Keiko Kurata ,  Noriyuki Matsusue ,  Kazuhiro Yoneda

Inventor： Keiko Kurata ,  Noriyuki Matsusue ,  Kazuhiro Yoneda

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H05B33/28 ,  H01L51/5234 ,  H01L51/5265

Abstract: An organic light-emitting element includes a reflective anode, a first functional layer, an organic light-emitting layer that emits blue light, a second functional layer, a transparent cathode, and a coating layer. An optical thickness of the first functional layer is greater than 0 nm but not greater than 316 nm. A difference in refractive index between the transparent cathode and either a layer adjacent to the transparent cathode within the second functional layer or a layer adjacent to the transparent cathode within the coating layer is from 0.1 to 0.7 inclusive. The transparent cathode has a physical thickness greater than 0 nm but not greater than 70 nm, a refractive index from 2.0 to 2.4 inclusive, and an optical thickness greater than 0 nm but not greater than 168 nm.

Abstract translation: 有机发光元件包括反射性阳极，第一功能层，发出蓝色光的有机发光层，第二功能层，透明阴极和涂层。 第一功能层的光学厚度大于0nm但不大于316nm。 透明阴极与第二功能层内的透明阴极相邻的层或与涂层内的透明阴极相邻的层之间的折射率差为0.1〜0.7。 透明阴极的物理厚度大于0nm但不大于70nm，折射率为2.0至2.4（包括端值），光学厚度大于0nm但不大于168nm。

公开(公告)号：US20130240716A1

公开(公告)日：2013-09-19

申请号：US13845343

申请日：2013-03-18

Applicant: Yutaka Hayashi ,  Kazuhiro YONEDA ,  Hirofumi WATANABE ,  Katsuhiko AISU ,  Takaaki NEGORO ,  Toshitaka OTA ,  Yasushi NAGAMUNE

Inventor： Yutaka Hayashi ,  Kazuhiro YONEDA ,  Hirofumi WATANABE ,  Katsuhiko AISU ,  Takaaki NEGORO ,  Toshitaka OTA ,  Yasushi NAGAMUNE

IPC: H01L27/146

CPC classification number: H01L27/14681 ,  H04N5/243 ,  H04N5/3745

Abstract: Provided is a method of varying the gain of an amplifying photoelectric conversion device and a variable gain photoelectric conversion device which are capable of achieving both signal processing under low illuminance and high-current processing under high light intensity, and thereby capable of securing a wide dynamic range. An amplifying photoelectric conversion part includes a photoelectric conversion element and amplification transistors forming a Darlington circuit. The sources and the drains of field-effect transistors are connected to the bases and the emitters of the amplification transistors, respectively. The gates of the field-effect transistors each function as a gain control part.

Abstract translation: 提供了一种改变放大光电转换装置和可变增益光电转换装置的增益的方法，其能够在高照度和高电流处理下在高光强度下实现信号处理，从而能够确保宽动态 范围。 放大光电转换部分包括形成达林顿电路的光电转换元件和放大晶体管。 场效应晶体管的源极和漏极分别连接到放大晶体管的基极和发射极。 场效应晶体管的栅极各自用作增益控制部分。