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公开(公告)号：US20100294315A1
公开(公告)日：2010-11-25
申请号：US12849255
申请日：2010-08-03
申请人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
发明人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
IPC分类号： B08B5/04
CPC分类号： H01L21/67028 , C23C16/4407 , H01L21/67092
摘要： A cleaning method using a cleaning apparatus having an adhesive sheet, a conductive sheet in contact with a base material of the adhesive sheet, and a pressing member for pressing the conductive sheet onto the adhesive sheet. The pressing member includes a voltage applier, and a pressing force controller which presses the adhesive sheet onto a curved surface of a portion to be cleaned of a vacuum processing apparatus from above the conductive sheet. The method includes pressing the pressing member by a pressing force controlled via the pressing force controller to press the conductive sheet and the adhesive sheet to adhere an adhesive surface of the adhesive sheet to the curved surface of the portion to be cleaned, and applying a voltage to the conductive sheet or applying a voltage having a temporally changed polarity.
摘要翻译： 使用具有粘合片的清洁装置，与粘合片的基材接触的导电片的清洁方法和用于将导电片压在粘合片上的按压部件。 按压构件包括电压施加器和压力控制器，该压力控制器从导电片的上方将粘合片压在真空处理设备的待清洁部分的弯曲表面上。 该方法包括：通过压力控制器控制的按压力来按压按压部件，按压导电片和粘合片，将粘合片的粘合面粘合到被清扫部的弯曲面上， 或者施加具有时间上改变的极性的电压。
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公开(公告)号：US06793768B2
公开(公告)日：2004-09-21
申请号：US10061168
申请日：2002-02-04
IPC分类号： C23C1600
CPC分类号： H01J37/32082
摘要： A plasma-assisted processing apparatus has a vacuum vessel defining a processing chamber, a gas supply line for carrying gases into the processing chamber, a workpiece support disposed in the processing chamber and serving as an electrode, a disk antenna for radiating a high-frequency wave having a frequency in the VHF or the UHF band into the processing chamber, a high-frequency waveguide for guiding a high-frequency wave to the disk antenna, and a window made of a dielectric material isolating the disk antenna from the processing chamber. A conductive ring is disposed between the disk antenna and the window such that one surface thereof is in contact with a peripheral part of the disk antenna.
摘要翻译： 等离子体辅助处理装置具有限定处理室的真空容器，用于将气体输送到处理室中的气体供给管线，设置在处理室中并用作电极的工件支撑件，用于辐射高频 具有在VHF或UHF频带中的频率进入处理室的波，用于将高频波引导到盘状天线的高频波导，以及由隔离盘天线的介电材料制成的窗口。 导电环设置在盘状天线和窗口之间，使得其一个表面与盘形天线的周边部分接触。
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公开(公告)号：US06716301B2
公开(公告)日：2004-04-06
申请号：US09799527
申请日：2001-03-07
申请人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
发明人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
IPC分类号： H01L21306
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3299 , H01L21/31116
摘要： A semiconductor manufacturing apparatus includes a unit for generating a plasma in a vacuum chamber, a wafer stage for holding a semiconductor wafer introduced into the vacuum chamber, a high frequency power supply for applying a high frequency voltage to the wafer stage, a wafer voltage probe for measuring a voltage of the semiconductor wafer at a rear surface of the semiconductor wafer, a current and voltage probe for measuring at least one of a voltage and a current applied to the wafer stage from the high frequency power supply, and a control portion. The control portion obtains an impedance from the semiconductor wafer to earth through the plasma on the basis of a voltage value of the semiconductor wafer measured by the wafer voltage probe, and a voltage value or a current value measured by the current and voltage probe, and performs a processing based on the obtained impedance.
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公开(公告)号：US08006340B2
公开(公告)日：2011-08-30
申请号：US12285177
申请日：2008-09-30
申请人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
发明人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
IPC分类号： A47L13/40
CPC分类号： H01L21/67028 , C23C16/4407 , H01L21/67092
摘要： The invention provides a cleaning apparatus for removing particles attached to the fine roughness on the surface of an insulating body coated on the metal surface of a vacuum processing apparatus. The present cleaning apparatus comprises an adhesive sheet 5 having a base material 51 and an adhesive surface 52, a conductive sheet 7 in contact with the base material 51, and a pressing member 11 for pressing the conductive sheet 7 onto the adhesive sheet 5, a voltage applying mechanism 9 for applying positive or negative voltage to the conductive sheet 7, and a pressing force controlling mechanism 8 for pressing the adhesive sheet 5 onto the curved surface 10 of the vacuum processing apparatus, wherein the pressing member 11 presses the conductive sheet 7 and the adhesive sheet 5 by a pressing force controlled via the pressing force controlling mechanism 8 in order to closely adhere the adhesive surface 52 of the adhesive sheet 5 to the curved surface of the insulating body 10 so as to remove particles attached to the insulating body 10, and positive or negative voltage is applied to the conductive sheet 7 to generate electrostatic attraction force so as to attract and remove particles attached to the insulating body 10.
摘要翻译： 本发明提供了一种用于除去附着在涂覆在真空处理装置的金属表面上的绝缘体表面上的微细粗糙度的颗粒的清洁装置。 本清洁装置包括具有基材51和粘合表面52的粘合片5，与基材51接触的导电片7和用于将导电片7压在粘合片5上的按压部件11， 用于向导电片7施加正电压或负电压的电压施加机构9和用于将粘合片5压在真空处理装置的曲面10上的按压力控制机构8，其中按压部件11按压导电片7 和通过压力控制机构8控制的压力的粘合片5，以便将粘合片5的粘合表面52紧密地粘合到绝缘体10的弯曲表面，以除去附着在绝缘体上的颗粒 如图10所示，并且正电压或负电压施加到导电片7以产生静电吸引力以便吸引和去除 连接到绝缘体10的密封件。
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公开(公告)号：US20050133162A1
公开(公告)日：2005-06-23
申请号：US10784275
申请日：2004-02-24
IPC分类号： H01L21/3065 , C23F4/00 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32477 , C23F4/00
摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.
摘要翻译： 一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁的10％的接地导电部件21a 内壁101的区域，具有允许来自等离子体的直流电流流过的结构，其中由导电构件21形成的直流接地位于等离子体（或等离子体密度）的浮动电位高于 位于晶片保持电极14附近的等离子体9的浮动电位，其中存在相对较大的壁切屑。
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公开(公告)号：US20110303844A1
公开(公告)日：2011-12-15
申请号：US13202556
申请日：2009-10-15
CPC分类号： H01J37/20 , G01R31/307 , H01J37/28 , H01J2237/2007
摘要： It is an object of the present invention to provide an electron microscope for properly applying a retarding voltage to a sample which is brought into electrical conduction.In order to accomplish the above-described object, the following electron microscope is proposed: The electron microscope including a negative-voltage applying power-supply for applying the negative voltage to the sample, and thereby forming a decelerating electric field to be exerted onto the electron beam, an electrostatic-chuck mechanism for providing a potential difference among a plurality of its internal electrodes, and thereby generating an adsorption force to be exerted onto the sample, and a contact terminal which is so configured as to come into contact with the sample when the sample is deployed on a sample-supporting stage, the electrostatic-chuck mechanism causes the potential difference to occur among the internal electrodes in the state where the contact terminal comes into contact with the sample, the negative-voltage applying power-supply being operated to apply the negative voltage to the contact terminal after the potential difference has been caused to occur.
摘要翻译： 本发明的目的在于提供一种电子显微镜，用于对被导入的样品适当地施加延迟电压。 为了实现上述目的，提出了以下电子显微镜：电子显微镜，其包括负电压施加电源，用于向样品施加负电压，从而形成施加在该样品上的减速电场 电子束，用于在多个内部电极之间提供电位差的静电吸盘机构，从而产生施加到样品上的吸附力;以及接触端子，其被配置为与样品接触 当样品被部署在样品支撑台上时，静电吸盘机构在接触端子与样品接触的状态下在内部电极之间产生电位差，负压施加电源为 在发生电位差之后，将负电压施加到接触端子。
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公开(公告)号：US07601241B2
公开(公告)日：2009-10-13
申请号：US10784275
申请日：2004-02-24
IPC分类号： C23C16/50 , C23C16/505 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/30 , C23C16/38 , C23C16/32
CPC分类号： H01J37/32477 , C23F4/00
摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.
摘要翻译： 一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁面积10％的接地导电部件21a 并且具有允许来自等离子体的直流电流流过其中的结构，其中由导电构件21形成的DC接地位于等离子体的浮动电位（或等离子体密度）高于浮动的位置 位于晶片保持电极14附近的等离子体9的电位，其中存在相对较大的壁切屑。
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公开(公告)号：US20070175586A1
公开(公告)日：2007-08-02
申请号：US11696280
申请日：2007-04-04
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32477 , C23F4/00
摘要： A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.
摘要翻译： 一种等离子体处理方法，用于通过向反应室施加高频处理具有等离子体的衬底，以及向衬底保持器施加第二高频包括覆盖反应室内壁的总表面积的至少90％，其中， 直接暴露于具有电介质的等离子体，设置包括接地的导电部分并且具有小于反应室的内壁的10％的面积的DC地球，并且对具有所述反应室的反应室中的衬底进行等离子体处理 位于位于反应室最靠近衬底的内壁处的等离子体的浮置电位高于等离子体的浮动电位的位置。
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公开(公告)号：US08024831B2
公开(公告)日：2011-09-27
申请号：US12849255
申请日：2010-08-03
申请人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
发明人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
IPC分类号： A47L13/40
CPC分类号： H01L21/67028 , C23C16/4407 , H01L21/67092
摘要： A cleaning method using a cleaning apparatus having an adhesive sheet, a conductive sheet in contact with a base material of the adhesive sheet, and a pressing member for pressing the conductive sheet onto the adhesive sheet. The pressing member includes a voltage applier, and a pressing force controller which presses the adhesive sheet onto a curved surface of a portion to be cleaned of a vacuum processing apparatus from above the conductive sheet. The method includes pressing the pressing member by a pressing force controlled via the pressing force controller to press the conductive sheet and the adhesive sheet to adhere an adhesive surface of the adhesive sheet to the curved surface of the portion to be cleaned, and applying a voltage to the conductive sheet or applying a voltage having a temporally changed polarity.
摘要翻译： 使用具有粘合片的清洁装置，与粘合片的基材接触的导电片的清洁方法和用于将导电片压在粘合片上的按压部件。 按压构件包括电压施加器和压力控制器，该压力控制器从导电片的上方将粘合片压在真空处理设备的待清洁部分的弯曲表面上。 该方法包括：通过压力控制器控制的按压力来按压按压部件，按压导电片和粘合片，将粘合片的粘合面粘合到被清扫部的弯曲面上， 或者施加具有时间上改变的极性的电压。
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10.发明授权Plasma processing method and apparatus using dynamic sensing of a plasma environment 失效使用动态感应等离子体环境的等离子体处理方法和装置公开(公告)号：US06911157B2
公开(公告)日：2005-06-28
申请号：US10347402
申请日：2003-01-21
IPC分类号： H05H1/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/66 , H05H1/46 , H01L21/00
CPC分类号： H01J37/32935 , H01J37/3299
摘要： At least one control parameter such as power supplied to a plasma, process pressure, gas flow rate, and radio frequency bias power to a wafer is changed for an extremely short time as compared with an entire plasma processing time, to the extent that such a change does not affect the result of plasma processing on the wafer, to monitor a temporal change of a plasma state which occurs at the time of changing. A signal resulting from the monitoring method is used to control or diagnose the plasma processing, thereby making it possible to accomplish miniature etching works, high quality deposition, surface processing.
摘要翻译： 与整个等离子体处理时间相比，至少一个控制参数（例如提供给等离子体的功率，过程压力，气体流速和射频偏置功率）与整个等离子体处理时间相比改变极短的时间， 改变不影响晶片上的等离子体处理的结果，以监视在改变时发生的等离子体状态的时间变化。 由监视方法产生的信号用于控制或诊断等离子体处理，从而可以实现微型蚀刻工作，高质量沉积，表面处理。
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