公开(公告)号：US08987813B2

公开(公告)日：2015-03-24

申请号：US13571366

申请日：2012-08-10

Applicant: Chiu-Te Lee ,  Ke-Feng Lin ,  Chih-Chien Chang ,  Wei-Lin Chen ,  Chih-Chung Wang

Inventor： Chiu-Te Lee ,  Ke-Feng Lin ,  Chih-Chien Chang ,  Wei-Lin Chen ,  Chih-Chung Wang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66704 ,  H01L29/7825

Abstract: A high voltage metal-oxide-semiconductor transistor device includes a substrate, at least an isolation structure formed in the substrate, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective sides of the gate. The isolation structure further includes a recess. The gate includes a first gate portion formed on a surface of the substrate and a second gate portion downwardly extending from the first gate portion and formed in the recess.

Abstract translation: 高压金属氧化物半导体晶体管器件包括至少形成在衬底中的隔离结构的衬底，形成在衬底上的栅极，以及形成在栅极各侧的衬底中的源极区和漏极区。 隔离结构还包括凹部。 栅极包括形成在基板的表面上的第一栅极部分和从第一栅极部分向下延伸并形成在凹部中的第二栅极部分。

公开(公告)号：US20130277742A1

公开(公告)日：2013-10-24

申请号：US13454149

申请日：2012-04-24

Applicant: Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

Inventor： Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

IPC: H01L29/78 ,  H01L21/76

CPC classification number: H01L29/0653 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/7816

Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation.

Abstract translation: 半导体结构包括具有第一导电类型的衬底; 具有形成在所述基板中并从所述基板的表面向下延伸的第二导电类型的深阱; 具有第一导电类型的第一阱和具有第二导电类型的第二阱都形成在深阱中并且从衬底的表面向下延伸，并且第二阱与第一阱间隔开; 栅电极，形成在所述基板上并且设置在所述第一阱和所述第二阱之间; 从衬底的表面向下延伸并且设置在栅电极和第二阱之间的隔离件; 导电插头，其包括彼此电连接的第一部分和第二部分，并且所述第一部分电连接到所述栅电极，并且所述第二部分穿透所述隔离。

公开(公告)号：US20130241879A1

公开(公告)日：2013-09-19

申请号：US13420483

申请日：2012-03-14

Applicant: HSUEH-YU LU ,  Ke-Feng Lin

Inventor： HSUEH-YU LU ,  Ke-Feng Lin

IPC: G06F3/042

CPC classification number: G06F3/0421 ,  G06F2203/04103

Abstract: An optical touch module includes a frame that comprises a plurality of side walls and an operating space formed by the plurality of side walls. A display module is disposed inside the frame, the display module comprises a base and a touch panel being disposed on the base, a first interval and a second interval being formed opposite to each other and between the base and the side walls of the frame, the touch panel being located adjacent to the operating space. At least one light sensing device comprises a fixed part and a detection part, and the light sensing device is located inside the first interval. At least one reflective element is disposed on the second interval, and comprises a reflective surface defined in a same horizontal plane as the detection part and oriented to the detection part.

Abstract translation: 光学触摸模块包括框架，该框架包括多个侧壁和由多个侧壁形成的操作空间。 显示模块设置在框架内部，显示模块包括底座和设置在基座上的触摸面板，第一间隔和第二间隔形成为彼此相对并且在基座与框架的侧壁之间， 触摸面板位于操作空间附近。 至少一个感光装置包括固定部分和检测部分，并且光感测装置位于第一间隔内。 至少一个反射元件设置在第二间隔上，并且包括在与检测部分相同的水平平面中限定并且被定向到检测部分的反射表面。

公开(公告)号：US20110194046A1

公开(公告)日：2011-08-11

申请号：US12700741

申请日：2010-02-05

Applicant: Ke-Feng Lin

Inventor： Ke-Feng Lin

IPC: G02F1/1333

CPC classification number: G02F1/13306 ,  G02F2001/133314

Abstract: A liquid crystal module includes a base frame which has a retaining space, two opposite end rims and two opposite side rims surrounding around the retaining space, a backlight panel and a display panel mounted in the retaining space. A top surface of the side rims defines at least one fastening fillister of which a top of a rear wall protrudes forward to form a fastening arm. A front end of the fastening arm protrudes downward to form a buckling portion. A flexible circuit board electrically connects the backlight panel, the display panel and an external circuit, and has a base board of which two opposite ends are mounted to the side rims. At least one fastening strip is formed at the two opposite ends of the base board and stretches into the fastening fillister. A buckling hole is opened in the fastening strip for buckling the buckling portion.

Abstract translation: 液晶模块包括具有保持空间的底座框架，两个相对端边缘和围绕保持空间的两个相对侧边缘，背光板和安装在保持空间中的显示面板。 侧边缘的顶表面限定至少一个紧固填料，其后壁的顶部向前突出以形成紧固臂。 紧固臂的前端向下突出以形成弯曲部。 柔性电路板将背光面板，显示面板和外部电路电连接，并且具有其两个相对端安装到侧边缘的基板。 在基板的两个相对端处形成至少一个紧固条，并且延伸到紧固填充物中。 在紧固带上打开一个弯曲孔，以使屈曲部分弯曲。

公开(公告)号：US20100080020A1

公开(公告)日：2010-04-01

申请号：US12242284

申请日：2008-09-30

Applicant: Ke-Feng Lin ,  Chi-Ming Tseng ,  Guan-Yi Liu

Inventor： Ke-Feng Lin ,  Chi-Ming Tseng ,  Guan-Yi Liu

IPC: F21V15/01 ,  H05K5/00 ,  G02F1/1333

CPC classification number: G02F1/133608 ,  G02F2201/465

Abstract: A frame member of a back lighting module includes a housing and a plastic frame. The housing defines a basic plate and a plurality of lateral plates bending from the basic plate. At least one lateral plate is warped to form a buckling portion with a concave-convex shape. The plastic frame is integrally bonded to the housing. The plastic frame has a plurality of sidewalls attached to insides of the corresponding lateral plates. At least one of the sidewalls has a mating portion integrally engaged with the buckling portion for fastening the housing and the plastic frame tightly.

Abstract translation: 后照明模块的框架构件包括壳体和塑料框架。 壳体限定基板和从基板弯曲的多个侧板。 至少一个侧板翘曲形成具有凹凸形状的弯曲部分。 塑料框架一体地结合到壳体。 塑料框架具有连接到对应的侧板的内部的多个侧壁。 侧壁中的至少一个具有与弯曲部一体地接合的配合部分，用于紧固壳体和塑料框架。

公开(公告)号：US08836067B2

公开(公告)日：2014-09-16

申请号：US13525471

申请日：2012-06-18

Applicant: Ming-Shun Hsu ,  Wen-Peng Hsu ,  Ke-Feng Lin ,  Min-Hsuan Tsai ,  Chih-Chung Wang

Inventor： Ming-Shun Hsu ,  Wen-Peng Hsu ,  Ke-Feng Lin ,  Min-Hsuan Tsai ,  Chih-Chung Wang

IPC: H01L27/146

CPC classification number: H01L29/0878 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/66681 ,  H01L29/7816

Abstract: A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, a first well, a second well, a shallow trench isolation (STI), a source, a drain and a gate. The first well is disposed in the substrate. The second well is disposed in the substrate. The STI is disposed in the second well. The STI has at least one floating diffusion island. The source is disposed in the first well. The drain is disposed in the second well. The electric type of the floating diffusion island is different from or the same with that of the drain. The gate is disposed above the first well and the second well, and partially overlaps the first well and the second well.

Abstract translation: 提供一种晶体管器件及其制造方法。 晶体管器件包括衬底，第一阱，第二阱，浅沟槽隔离（STI），源极，漏极和栅极。 第一个井被设置在基板中。 第二孔设置在基板中。 STI布置在第二个孔中。 STI具有至少一个浮动扩散岛。 源放置在第一个井中。 排水口设置在第二个井中。 浮动扩散岛的电气类型与漏极不同或相同。 门设置在第一井和第二井的上方，并且部分地与第一井和第二井重叠。

公开(公告)号：US08766358B2

公开(公告)日：2014-07-01

申请号：US13454149

申请日：2012-04-24

Applicant: Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

Inventor： Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

IPC: H01L29/76

CPC classification number: H01L29/0653 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/7816

Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation.

Abstract translation: 半导体结构包括具有第一导电类型的衬底; 具有形成在所述基板中并从所述基板的表面向下延伸的第二导电类型的深阱; 具有第一导电类型的第一阱和具有第二导电类型的第二阱都形成在深阱中并且从衬底的表面向下延伸，并且第二阱与第一阱间隔开; 栅电极，形成在所述基板上并且设置在所述第一阱和所述第二阱之间; 从衬底的表面向下延伸并且设置在栅电极和第二阱之间的隔离件; 导电插头，其包括彼此电连接的第一部分和第二部分，并且所述第一部分电连接到所述栅电极，并且所述第二部分穿透所述隔离。

公开(公告)号：US20130334600A1

公开(公告)日：2013-12-19

申请号：US13525471

申请日：2012-06-18

Applicant: Ming-Shun Hsu ,  Wen-Peng Hsu ,  Ke-Feng Lin ,  Min-Hsuan Tsai ,  Chih-Chung Wang

Inventor： Ming-Shun Hsu ,  Wen-Peng Hsu ,  Ke-Feng Lin ,  Min-Hsuan Tsai ,  Chih-Chung Wang

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/0878 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/66681 ,  H01L29/7816

Abstract: A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, a first well, a second well, a shallow trench isolation (STI), a source, a drain and a gate. The first well is disposed in the substrate. The second well is disposed in the substrate. The STI is disposed in the second well. The STI has at least one floating diffusion island. The source is disposed in the first well. The drain is disposed in the second well. The electric type of the floating diffusion island is different from or the same with that of the drain. The gate is disposed above the first well and the second well, and partially overlaps the first well and the second well.

Abstract translation: 提供一种晶体管器件及其制造方法。 晶体管器件包括衬底，第一阱，第二阱，浅沟槽隔离（STI），源极，漏极和栅极。 第一个井被设置在基板中。 第二孔设置在基板中。 STI布置在第二个孔中。 STI具有至少一个浮动扩散岛。 源放置在第一个井中。 排水口设置在第二个井中。 浮动扩散岛的电气类型与漏极不同或相同。 门设置在第一井和第二井的上方，并且部分地与第一井和第二井重叠。

公开(公告)号：US20130328123A1

公开(公告)日：2013-12-12

申请号：US13489467

申请日：2012-06-06

Applicant: Wei-Lin Chen ,  Ke-Feng Lin ,  Chih-Chien Chang ,  Chih-Chung Wang

Inventor： Wei-Lin Chen ,  Ke-Feng Lin ,  Chih-Chien Chang ,  Chih-Chung Wang

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/0878 ,  H01L21/2255 ,  H01L21/2257 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0873 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66719 ,  H01L29/7809

Abstract: A semiconductor device includes a semiconductor substrate, a buried layer disposed in the semiconductor substrate; a deep well disposed in the semiconductor substrate; a first doped region disposed in the deep well, wherein the first doped region contacts the buried layer; a conductive region having the first conductivity type surrounding and being adjacent to the first doped region, wherein the conductive region has a concentration higher than the first doped region; a first heavily doped region disposed in the first doped region; a well having a second conductivity type disposed in the deep well; a second heavily doped region disposed in the well; a gate disposed on the semiconductor substrate between the first heavily doped region and the second heavily doped region; and a first trench structure and a second trench structure, wherein a depth of the second trench structure is substantially deeper than a depth of the buried layer.

Abstract translation: 半导体器件包括半导体衬底，设置在半导体衬底中的掩埋层; 深井设置在半导体衬底中; 设置在所述深阱中的第一掺杂区，其中所述第一掺杂区接触所述掩埋层; 导电区域，具有围绕并邻近第一掺杂区域的第一导电类型，其中导电区域的浓度高于第一掺杂区域; 设置在所述第一掺杂区域中的第一重掺杂区域; 具有设置在深井中的具有第二导电类型的阱; 设置在井中的第二重掺杂区域; 设置在所述第一重掺杂区域和所述第二重掺杂区域之间的所述半导体衬底上的栅极; 以及第一沟槽结构和第二沟槽结构，其中所述第二沟槽结构的深度比所述掩埋层的深度更深。

公开(公告)号：US08094257B2

公开(公告)日：2012-01-10

申请号：US12700741

申请日：2010-02-05

Applicant: Ke-Feng Lin

Inventor： Ke-Feng Lin

IPC: G02F1/1333

CPC classification number: G02F1/13306 ,  G02F2001/133314

Abstract: A liquid crystal module includes a base frame which has a retaining space, two opposite end rims and two opposite side rims surrounding around the retaining space, a backlight panel and a display panel mounted in the retaining space. A top surface of the side rims defines at least one fastening fillister of which a top of a rear wall protrudes forward to form a fastening arm. A front end of the fastening arm protrudes downward to form a buckling portion. A flexible circuit board electrically connects the backlight panel, the display panel and an external circuit, and has a base board of which two opposite ends are mounted to the side rims. At least one fastening strip is formed at the two opposite ends of the base board and stretches into the fastening fillister. A buckling hole is opened in the fastening strip for buckling the buckling portion.

Abstract translation: 液晶模块包括具有保持空间的底座框架，两个相对端边缘和围绕保持空间的两个相对侧边缘，背光板和安装在保持空间中的显示面板。 侧边缘的顶表面限定至少一个紧固填料，其后壁的顶部向前突出以形成紧固臂。 紧固臂的前端向下突出以形成弯曲部。 柔性电路板将背光面板，显示面板和外部电路电连接，并且具有其两个相对端安装到侧边缘的基板。 在基板的两个相对端处形成至少一个紧固条，并且延伸到紧固填充物中。 在紧固带上打开一个弯曲孔，以使屈曲部分弯曲。