公开(公告)号：US20110229826A1

公开(公告)日：2011-09-22

申请号：US13118779

申请日：2011-05-31

申请人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03F7/20

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US20110212255A9

公开(公告)日：2011-09-01

申请号：US11987653

申请日：2007-12-03

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： C23C14/54 ,  B05C11/00

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

公开(公告)号：US07799368B2

公开(公告)日：2010-09-21

申请号：US11987653

申请日：2007-12-03

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： B05D3/12

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

公开(公告)号：US07669608B2

公开(公告)日：2010-03-02

申请号：US10988639

申请日：2004-11-16

申请人： Kei Hayasaki ,  Shinichi Ito ,  Tatsuhiko Ema ,  Riichiro Takahashi

发明人： Kei Hayasaki ,  Shinichi Ito ,  Tatsuhiko Ema ,  Riichiro Takahashi

IPC分类号： B08B3/00

CPC分类号： G03F7/3021 ,  H01L21/31133 ,  Y10S134/902

摘要： There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.

摘要翻译： 公开了一种基板处理方法，其特征在于，将处理液供给到基板上，并且，在设置在喷嘴中的第一排出区域将所述第一清洗液连续地排出到所述基板，同时使所述喷嘴和基板在一个方向上相对移动 其中与所述第一放电区域的方向成直角相交的方向的长度等于或大于所述基板的最大直径或最长侧，所述喷嘴从第一喷射区域向所述基板连续地喷出第一气体 并且与第一喷射区域的方向成直角交叉的方向的长度等于或大于基板的最大直径或最长侧。

公开(公告)号：US07510341B2

公开(公告)日：2009-03-31

申请号：US10878310

申请日：2004-06-29

申请人： Kei Hayasaki ,  Daizo Mutoh ,  Masafumi Asano ,  Tadahito Fujisawa ,  Tsuyoshi Shibata ,  Shinichi Ito

发明人： Kei Hayasaki ,  Daizo Mutoh ,  Masafumi Asano ,  Tadahito Fujisawa ,  Tsuyoshi Shibata ,  Shinichi Ito

IPC分类号： G03D5/00

CPC分类号： G03F7/70683 ,  G03F7/40

摘要： A temperature calibration method for a baking apparatus comprising forming a photoresist film onto a substrate, forming a latent image of a dose monitor mark onto the photoresist film, preparing baking processing apparatuses, baking the substrate or another substrate by temperature settings performed every repeat of a series of the forming the resist film and the forming the latent image with each prepared baking apparatus, cooling the baking-processed substrate, measuring a length of the latent image of the dose monitor mark after the cooling or a length of a dose monitor mark which being obtained by developing the resist film, determining relationship between a temperature setting and an effective dose in advance, and calibrating temperature settings corresponding to the each baking processing apparatus to be obtained a predetermined effective dose on the basis of the determining relationship and the measured length corresponding to the each baking processing apparatus.

摘要翻译： 一种用于烘烤设备的温度校准方法，包括在基板上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成剂量监测标记的潜像，制备烘烤处理设备，通过每次重复执行的温度设置来烘烤基板或另一个基板 一系列形成抗蚀剂膜并用每个制备的烘烤装置形成潜像，冷却烘焙处理的基材，测量冷却后的剂量监测标记的潜像的长度或剂量监测标记的长度， 通过显影抗蚀剂膜，预先确定温度设定和有效剂量之间的关系，并且基于确定关系和测量长度来校准与每个烘焙处理设备相应的温度设置以获得预定有效剂量 对应于每个烘焙处理设备。

公开(公告)号：US07483155B2

公开(公告)日：2009-01-27

申请号：US11051617

申请日：2005-01-27

申请人： Kei Hayasaki ,  Toru Mikami ,  Shinichi Ito ,  Yuichiro Yamazaki ,  Toshiya Kotani

发明人： Kei Hayasaki ,  Toru Mikami ,  Shinichi Ito ,  Yuichiro Yamazaki ,  Toshiya Kotani

IPC分类号： G01B11/14 ,  G06F17/50 ,  G03C1/00

CPC分类号： G03F7/70625 ,  G01N21/956

摘要： Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the evaluation object and the environment are prepared. Reflectance wavelength dispersions to the virtual component ratios are calculated. Similar reflectance wavelength dispersions having a small difference with the measured wavelength dispersion are extracted from the reflectance wavelength dispersions. Weighted average to the virtual component ratios used for calculating the similar reflectance wavelength dispersions are calculated to obtain a component ratio of the substance forming the evaluation object and the environment so that weighting is larger when the difference is smaller. A structure of the evaluation object is determined from the calculated component ratio.

摘要翻译： 测量从评价对象反射的光的强度的波长色散。 制备形成评价对象的物质和环境的复合折射率。 制备包含形成评价对象的物质与环境的混合比的虚拟成分比例。 计算出虚拟分量比的反射波长色散。 从反射波长分散体中提取与测量的波长色散具有小差异的类似反射率波长色散。 计算用于计算相似反射率波长色散的虚拟分量比的加权平均值，以获得形成评估对象的物质与环境的分量比，使得当差值较小时加权较大。 评估对象的结构根据计算的分量比确定。

公开(公告)号：US07399578B2

公开(公告)日：2008-07-15

申请号：US11493629

申请日：2006-07-27

申请人： Riichiro Takahashi ,  Kei Hayasaki ,  Tomoyuki Takeishi ,  Shinichi Ito

发明人： Riichiro Takahashi ,  Kei Hayasaki ,  Tomoyuki Takeishi ,  Shinichi Ito

IPC分类号： G03F7/32

CPC分类号： H01L21/31133 ,  G03F7/3021 ,  G03F7/322 ,  G03F7/422 ,  G03F7/425

摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

摘要翻译： 一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。

公开(公告)号：US07368209B2

公开(公告)日：2008-05-06

申请号：US10855380

申请日：2004-05-28

申请人： Eishi Shiobara ,  Kei Hayasaki ,  Tadahito Fujisawa ,  Shinichi Ito

发明人： Eishi Shiobara ,  Kei Hayasaki ,  Tadahito Fujisawa ,  Shinichi Ito

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： G03F7/70608

摘要： An method for evaluating sensitivity of a photoresist includes transferring an exposure dose monitor mark onto an inspection resist film with an inspection setting exposure dose using an exposure tool. Inspection sensitivity index varying according to the inspection setting exposure dose is measured, using an inspection transferred image of the exposure dose monitor mark delineated on the inspection resist film. An inspection photoresist sensitivity of the inspection resist film is calculated using sensitivity calibration data, based on the inspection sensitivity index.

摘要翻译： 用于评估光致抗蚀剂的灵敏度的方法包括使用曝光工具以曝光剂量的曝光剂量将曝光剂量监测标记转移到检查抗蚀剂膜上。 使用在检查抗蚀剂膜上划定的曝光剂量监视标记的检查转印图像，测量根据检查设定曝光剂量而变化的检查灵敏度指数。 基于检查灵敏度指数，使用灵敏度校准数据计算检查抗蚀剂膜的检查光致抗蚀剂敏感性。

公开(公告)号：US07312018B2

公开(公告)日：2007-12-25

申请号：US10927141

申请日：2004-08-27

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： G03F7/16 ,  G03F7/38

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N)

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将所述溶液供给到所述基板上以形成液膜，其中所述喷嘴的排出口与所述基板之间的距离h被设定为不小于2mm并且在小于5×10 -5的范围内， 相对于溶液的表面张力γ（N / m）给出的SUP> qgamma（mm），通过排出口连续排出的溶液的排出速度q（m / sec）和5×10 -6 5（m.sec / N）

公开(公告)号：US20060102614A1

公开(公告)日：2006-05-18

申请号：US11304549

申请日：2005-12-16

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

IPC分类号： H05B3/68

CPC分类号： H01L21/6715 ,  B05C5/0254 ,  B05C11/08 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/38 ,  G03F7/70358 ,  G03F7/70558 ,  H01L21/67109 ,  H01L21/67115

摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.