公开(公告)号：US20110097875A1

公开(公告)日：2011-04-28

申请号：US12909078

申请日：2010-10-21

申请人： Yohei Gokita ,  Takashi Yamaguchi ,  Masashi Koyama ,  Masashi Aoki ,  Masaaki Suzuki ,  Katsuhiko Sekiya ,  Ye Chen ,  Keiichi Kajiyama ,  Toshiharu Daii

发明人： Yohei Gokita ,  Takashi Yamaguchi ,  Masashi Koyama ,  Masashi Aoki ,  Masaaki Suzuki ,  Katsuhiko Sekiya ,  Ye Chen ,  Keiichi Kajiyama ,  Toshiharu Daii

IPC分类号： H01L21/78

CPC分类号： H01L21/78

摘要： A wafer processing method for dividing a wafer into individual devices along a plurality of crossing streets formed on the front side of the wafer, the individual devices being respectively formed in a plurality of regions partitioned by the streets. The wafer processing method includes the steps of attaching the front side of the wafer to a dicing tape supported to an annular dicing frame, grinding the back side of the wafer to reduce the thickness of the wafer to a predetermined thickness, forming a break start point along each street from the back side of the wafer, applying an external force to the wafer to break the wafer along each street where the break start point is formed, thereby dividing the wafer into the individual devices, attaching the back side of the wafer to a front side of an adhesive tape supported to an annular frame and next removing the adhesive tape from the front side of the adhesive tape, and peeling off and picking up each device from the adhesive tape.

摘要翻译： 一种晶片处理方法，用于沿着形成在晶片的前侧上的多个交叉街道将晶片分割为各个装置，各个装置分别形成在由街道分隔开的多个区域中。 晶片处理方法包括以下步骤：将晶片的前侧附接到支撑在环形切割框架上的切割带，研磨晶片的背面以将晶片厚度减小到预定厚度，形成断点起点 沿着从晶片的背面的每个街道，向晶片施加外力，以沿着形成断裂起点的每个街道破碎晶片，从而将晶片分成各个装置，将晶片的背面附着到 将胶带的前侧支撑在环形框架上，然后从胶带的前侧去除胶带，并从胶带上剥离和拾取每个装置。

公开(公告)号：US07677955B2

公开(公告)日：2010-03-16

申请号：US12243483

申请日：2008-10-01

申请人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

发明人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

IPC分类号： B24B49/00

CPC分类号： B24D7/18 ,  B24B1/00 ,  B24B7/228

摘要： A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 μm with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 μm and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 μm.

摘要翻译： 一种用于在前侧具有多个器件的晶片的研磨方法，其中晶片的背面通过砂轮研磨，以通过吸气效应抑制晶片中重金属的运动，并且还保持模具强度 的每个装置在约1000MPa或更大。 砂轮由固定在框架自由端的框架和研磨件构成。 研磨构件通过用玻璃化粘合剂固定具有小于或等于1μm的晶粒尺寸的金刚石磨粒来制造。 在保护构件与卡盘台接触的状态下，将保护构件安装在晶片的前侧，并将晶片保持在卡盘台上。 砂轮沿着卡盘台转动而旋转，从而通过研磨部件磨削晶片的背面，使得晶片背面的平均表面粗糙度小于或等于0.003μm，厚度为 残留在晶片背面的应变层为0.05μm。

公开(公告)号：US20090098808A1

公开(公告)日：2009-04-16

申请号：US12243483

申请日：2008-10-01

申请人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

发明人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

IPC分类号： B24B1/00 ,  B24B7/00

CPC分类号： B24D7/18 ,  B24B1/00 ,  B24B7/228

摘要： A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 μm with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 μm and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 μm.

摘要翻译： 一种用于在前侧具有多个器件的晶片的研磨方法，其中晶片的背面通过砂轮研磨，以通过吸气效应抑制晶片中重金属的运动，并且还保持模具强度 的每个装置在约1000MPa或更大。 砂轮由固定在框架自由端的框架和研磨件构成。 研磨部件通过将具有小于或等于1μm的粒度的金刚石磨粒与玻璃化粘合固定而制成。 在保护构件与卡盘台接触的状态下，将保护构件安装在晶片的前侧，并将晶片保持在卡盘台上。 砂轮以旋转卡盘台的方式旋转，从而通过研磨部件磨削晶片的背面，使得晶片背面的平均表面粗糙度小于或等于0.003μm，厚度为 残留在晶片背面的应变层为0.05μm。

公开(公告)号：US20070264912A1

公开(公告)日：2007-11-15

申请号：US11797741

申请日：2007-05-07

申请人： Keiichi Kajiyama ,  Tadato Nagasawa

发明人： Keiichi Kajiyama ,  Tadato Nagasawa

IPC分类号： B24B7/30 ,  B24B1/00

CPC分类号： B24B7/228 ,  H01L21/67092

摘要： A method of processing a wafer having a device area in which a plurality of devise are formed and a peripheral excess area surrounding the device area on the front surface, comprising an annular groove forming step for forming an annular groove having a predetermined depth and a predetermined width at the boundary between the device area and the peripheral excess area in the rear surface of the wafer by positioning a cutting blade at the boundary; and a reinforcement forming step for grinding an area corresponding to the device area on the rear surface of the wafer in which the annular groove has been formed, to reduce the thickness of the device area to a predetermined thickness and allowing an area corresponding to the peripheral excess area on the rear surface of the wafer to be left behind to form an annular reinforcement.

摘要翻译： 一种处理具有其中形成有多个设备的设备区域和围绕前表面的设备区域的周边多余区域的晶片的方法，包括：环形槽形成步骤，用于形成具有预定深度和预定深度的环形槽; 通过将切割刀片定位在边界处，在晶片的后表面中的装置区域和周边多余区域之间的边界处的宽度; 以及加强成形步骤，用于研磨与已经形成有环形槽的晶片的背面上的装置区域相对应的区域，以将装置区域的厚度减小到预定厚度，并允许与周边相对应的区域 留下晶片后表面上的多余面积以形成环形增强件。

公开(公告)号：US06939785B2

公开(公告)日：2005-09-06

申请号：US10866781

申请日：2004-06-15

申请人： Keiichi Kajiyama ,  Kentaro Odanaka

发明人： Keiichi Kajiyama ,  Kentaro Odanaka

IPC分类号： H01L21/52 ,  B23K26/00 ,  B24B1/00 ,  B28D5/00 ,  H01L21/30 ,  H01L21/301 ,  H01L21/304 ,  H01L21/44 ,  H01L21/58 ,  H01L21/68 ,  H01L21/78

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01068 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S438/928 ,  H01L2924/3512 ,  H01L2924/00

摘要： A process for manufacturing a semiconductor chip by dividing a semiconductor wafer having a plurality of streets formed in a lattice-like form on the front surface into individual semiconductor chips, and affixing an adhesive film for die bonding to the back surfaces of the individual semiconductor chips, comprising a dividing groove forming step for forming dividing grooves having a predetermined depth from the front surface of the semiconductor wafer along the streets; a protective member affixing step for affixing a protective member to the front surface having dividing grooves formed thereon of the semiconductor wafer; a dividing groove exposing step for exposing the dividing grooves to the back surface by grinding the back surface of the semiconductor wafer to divide the semiconductor wafer into individual semiconductor chips; an adhesive film affixing step for affixing the adhesive film to the back surfaces of the individually divided semiconductor chips; and an adhesive film cutting step for applying a laser beam to the adhesive film affixed on the back surfaces of the individually divided semiconductor chips from the front surface side of the adhesive film along the dividing grooves to cut the adhesive film along the dividing grooves.

摘要翻译： 一种半导体芯片的制造方法，其特征在于，将具有在前表面上形成格子状的多个街道的半导体晶片分割成单独的半导体芯片，并将贴合粘合膜贴附于各个半导体芯片的背面 包括分隔槽形成步骤，用于从所述街道的半导体晶片的前表面形成具有预定深度的分隔槽; 用于将保护构件固定在其上形成有半导体晶片的分隔槽的前表面的保护构件固定步骤; 分隔槽暴露步骤，用于通过研磨半导体晶片的背面将分隔槽暴露于背面以将半导体晶片分成单独的半导体芯片; 用于将粘合剂膜粘附到单独分割的半导体芯片的背面的粘合膜固定步骤; 以及粘合膜切割步骤，用于沿着分隔槽将粘合膜的固定在单独分割的半导体芯片的背面上的粘合膜施加到粘合膜的前表面侧，以沿着分隔槽切割粘合剂膜。

公开(公告)号：US08025556B2

公开(公告)日：2011-09-27

申请号：US12349770

申请日：2009-01-07

申请人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Setsuo Yamamoto

发明人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Setsuo Yamamoto

IPC分类号： B24B1/00

CPC分类号： B24B37/042 ,  B24B27/0076

摘要： A method of grinding a wafer, including: a wafer holding step for holding a wafer on a conical holding surface of a chuck table having the holding surface; a rough grinding step for performing rough grinding of the wafer held on the holding surface of the chuck table by positioning a grinding surface of a rough grinding wheel at a predetermined inclination angle relative to the holding surface of said chuck table, and rotating the rough grinding wheel; and a finish grinding step for performing finish grinding of the wafer by positioning a grinding surface of a finish grinding wheel in parallel to the holding surface of the chuck table, and rotating the finish grinding wheel in a grinding region of the grinding wheel in a direction toward the vertex of the contact angle between the grinding surface of the finish grinding wheel and the surface to be ground of the wafer.

摘要翻译： 一种研磨晶片的方法，包括：晶片保持步骤，用于将晶片保持在具有保持表面的卡盘台的锥形保持表面上; 通过将粗磨轮的研磨面相对于所述夹盘的保持面定位成预定的倾斜角度，对保持在卡盘台的保持面上的晶片进行粗磨，粗磨加工， 轮; 以及精磨步骤，通过将精磨轮的研磨面与夹盘的保持面平行地定位，使精磨砂轮在砂轮的研磨区域中沿着方向 朝向精磨轮的磨削表面与待研磨的表面之间的接触角的顶点。

公开(公告)号：US20100267219A1

公开(公告)日：2010-10-21

申请号：US12759338

申请日：2010-04-13

申请人： Keiichi Kajiyama

发明人： Keiichi Kajiyama

IPC分类号： H01L21/78

CPC分类号： B23K26/0853 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/78 ,  H01L33/0079 ,  H01L2221/68327 ,  H01L2221/68336

摘要： An optical device wafer processing method including a protective plate attaching step of attaching a transparent protective plate through a double-sided adhesive tape to the front side of a sapphire substrate constituting an optical device wafer, the double-sided adhesive tape being composed of a sheet capable of blocking ultraviolet radiation and adhesive layers formed on both sides of the sheet, wherein the adhesive force of each adhesive layer can be reduced by applying ultraviolet radiation; a sapphire substrate grinding step of grinding the back side of the sapphire substrate; a modified layer forming step of applying a laser beam to the sapphire substrate from the back side thereof to thereby form a modified layer in the sapphire substrate along each street; a protective plate removing step of removing the protective plate in the condition where the double-sided adhesive tape is left on the sapphire substrate; and a wafer dividing step of breaking the sapphire substrate along each street where the modified layer is formed, thus dividing the optical device wafer into individual optical devices in the condition where the double-sided adhesive tape is left on the sapphire substrate.

摘要翻译： 一种光学器件晶片处理方法，包括将透明保护板通过双面胶带附接到构成光学器件晶片的蓝宝石衬底的前侧的保护板附接步骤，所述双面胶带由片材 能够阻挡形成在片材的两面的紫外线辐射和粘合剂层，其中可以通过施加紫外线辐射来减少每个粘合剂层的粘合力; 蓝宝石衬底研磨步骤，研磨蓝宝石衬底的背面; 改性层形成步骤，从其背面向蓝宝石衬底施加激光束，从而沿着每条街道在蓝宝石衬底中形成改性层; 在双面胶带留在蓝宝石基板上的状态下去除保护板的保护板去除步骤; 以及将蓝宝石衬底沿着形成有修饰层的街道断开的晶片分割工序，在双面胶带留在蓝宝石衬底上的状态下将光学器件晶片分割为各个光学元件。

公开(公告)号：US20100055877A1

公开(公告)日：2010-03-04

申请号：US12542270

申请日：2009-08-17

申请人： Keiichi Kajiyama ,  Azumi Kondo

发明人： Keiichi Kajiyama ,  Azumi Kondo

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68336

摘要： Disclosed herein is a wafer processing method for dividing a wafer along a plurality of streets. The wafer processing method includes a back grinding step of grinding the back side of the wafer in an area corresponding to a device area to thereby reduce the thickness of the device area to a predetermined finished thickness and to simultaneously form an annular reinforcing portion on the back side of the wafer in an area corresponding to a peripheral marginal area, a wafer supporting step of attaching the back side of the wafer to a dicing tape, a kerf forming step of cutting the front side of the wafer along each street to thereby form a kerf having a depth corresponding to the thickness of the device area along each street, thereby dividing the device area into individual devices, and a peripheral marginal area removing step of peeling off the peripheral marginal area from the dicing tape.

摘要翻译： 本文公开了一种用于沿着多个街道分割晶片的晶片处理方法。 晶片处理方法包括：在与设备区域相对应的区域中研磨晶片的背面的背面磨削步骤，从而将装置区域的厚度减小到预定的最终厚度，并且同时在背面形成环形增强部分 在与边缘区域相对应的区域中的晶片的侧面，将晶片的背面附着到切割带的晶片支撑步骤，切割步骤，沿着每条街道切割晶片的前侧，从而形成 切口具有对应于沿着每条街道的装置区域的厚度的深度，从而将装置区域分成单独的装置，以及从切割带剥离周边边缘区域的周边边缘区域去除步骤。

公开(公告)号：US07527547B2

公开(公告)日：2009-05-05

申请号：US11797741

申请日：2007-05-07

申请人： Keiichi Kajiyama ,  Tadato Nagasawa

发明人： Keiichi Kajiyama ,  Tadato Nagasawa

IPC分类号： B24B1/00

CPC分类号： B24B7/228 ,  H01L21/67092

摘要： A method of processing a wafer having a device area in which a plurality of devise are formed and a peripheral excess area surrounding the device area on the front surface, comprising an annular groove forming step for forming an annular groove having a predetermined depth and a predetermined width at the boundary between the device area and the peripheral excess area in the rear surface of the wafer by positioning a cutting blade at the boundary; and a reinforcement forming step for grinding an area corresponding to the device area on the rear surface of the wafer in which the annular groove has been formed, to reduce the thickness of the device area to a predetermined thickness and allowing an area corresponding to the peripheral excess area on the rear surface of the wafer to be left behind to form an annular reinforcement.

摘要翻译： 一种处理具有其中形成有多个设备的设备区域和围绕前表面的设备区域的周边多余区域的晶片的方法，包括：环形槽形成步骤，用于形成具有预定深度和预定深度的环形槽; 通过将切割刀片定位在边界处，在晶片的后表面中的装置区域和周边多余区域之间的边界处的宽度; 以及加强成形步骤，用于研磨与形成有所述环形槽的所述晶片的背面上的所述装置区域相对应的区域，以将所述装置区域的厚度减小到预定厚度，并允许与所述周边相对应的区域 留下晶片后表面上的多余面积以形成环形增强件。

公开(公告)号：US20050054274A1

公开(公告)日：2005-03-10

申请号：US10934553

申请日：2004-09-07

申请人： Keiichi Kajiyama

发明人： Keiichi Kajiyama

IPC分类号： H01L21/304 ,  H01L21/00 ,  H01L21/301 ,  H01L21/316 ,  H01L21/68 ,  H01L21/78 ,  B24B1/00

CPC分类号： H01L21/78 ,  B24B37/042 ,  H01L21/304 ,  H01L21/31654 ,  H01L21/67069 ,  H01L21/6715 ,  H01L21/6835 ,  H01L2221/6834

摘要： A method of processing a semiconductor wafer having circuits which are formed in a plurality of rectangular areas sectioned by streets arranged in a lattice pattern on the front surface, comprising: a grinding step of grinding the back surface of the semiconductor wafer to a predetermined thickness; and an oxide film forming step of forming an oxide film on the back surface of the semiconductor wafer ground to the predetermined thickness.

摘要翻译： 一种处理半导体晶片的方法，所述半导体晶片具有形成在由所述前表面上的格子图案排列的街道划分的多个矩形区域中的电路，所述方法包括：研磨步骤，将所述半导体晶片的背面研磨至预定厚度; 以及在半导体晶片的背面形成氧化膜至预定厚度的氧化膜形成步骤。