公开(公告)号：US07027227B2

公开(公告)日：2006-04-11

申请号：US10761293

申请日：2004-01-22

申请人： Keiko Chiba ,  Kenichiro Mori

发明人： Keiko Chiba ,  Kenichiro Mori

IPC分类号： G02B27/10

CPC分类号： G03F7/168 ,  B29C64/129 ,  G02B3/0031 ,  G02B3/005 ,  G02B3/0056 ,  G03F7/0005 ,  G03F7/0017 ,  G03F7/0037

摘要： A method for forming a three-dimensional structure made of a photosensitive material on a substrate includes the steps of determining a film thickness of the photosensitive material necessary to form the desired three-dimensional structure, comparing a predetermined maximum film thickness with the film thickness determined by the determining step, and applying, when the film thickness determined by the determining step is greater than the predetermined maximum film thickness, the photosensitive material within the maximum film thickness plural times until the photosensitive material has the film thickness on the substrate.

摘要翻译： 用于在基板上形成由感光材料制成的三维结构的方法包括以下步骤：确定形成所需三维结构所需的感光材料的膜厚度，将预定最大膜厚与确定的膜厚进行比较 通过确定步骤，并且当由确定步骤确定的膜厚度大于预定最大膜厚度时，将最大膜厚度内的感光材料多次施加，直到感光材料在基板上具有膜厚度为止。

公开(公告)号：US5870448A

公开(公告)日：1999-02-09

申请号：US855473

申请日：1997-05-13

申请人： Hiroshi Maehara ,  Keiko Chiba

发明人： Hiroshi Maehara ,  Keiko Chiba

IPC分类号： G03F1/22 ,  G21K1/10 ,  H01L21/027 ,  G21K5/00

CPC分类号： G03F1/22 ,  G21K1/10

摘要： The present X-ray mask comprises an X-ray transmitting film, and a mask pattern formed on the X-ray transmitting film, wherein the mask pattern includes a mixture of a high-contrast pattern and a low-contrast pattern against X-rays and wherein the high-contrast pattern is comprised of stacked films the number of which is larger than that of the low-contrast pattern and which are made of different kinds of materials. A fabrication process of this X-ray mask comprises a step of forming a first metal film; a step of forming a second metal film of a different kind of material from the first metal film, thereon; and a step of successively performing a resist application process and an etching process to form a portion where the both first and second metal films are removed, a portion where only the first metal layer is left, and a portion where the both first and second metal layers are left, thereby forming a mask pattern.

摘要翻译： 本X射线掩模包括X射线透射膜和形成在X射线透射膜上的掩模图案，其中掩模图案包括针对X射线的高对比度图案和低对比度图案的混合物 并且其中所述高对比度图案包括数量大于所述低对比度图案并且由不同种类的材料制成的堆叠薄膜。 该X射线掩模的制造工艺包括形成第一金属膜的步骤; 在其上形成与第一金属膜不同种类的材料的第二金属膜的步骤; 以及连续进行抗蚀剂涂布处理和蚀刻工序以形成去除了第一和第二金属膜两者的部分，仅剩下第一金属层的部分，以及第一和第二金属 留下层，从而形成掩模图案。

公开(公告)号：US5733688A

公开(公告)日：1998-03-31

申请号：US570686

申请日：1995-12-11

申请人： Hideo Kato ,  Masao Sugata ,  Keiko Chiba ,  Hiroshi Maehara

发明人： Hideo Kato ,  Masao Sugata ,  Keiko Chiba ,  Hiroshi Maehara

IPC分类号： G03F1/22 ,  G03F9/00

CPC分类号： G03F1/22

摘要： A mask suitably usable in X-ray lithography has a membrane and a radiation absorbing material pattern formed on the membrane, wherein the radiation absorbing material pattern contains an alloy including tungsten (W) and molybdenum (Mo), the proportion of the molybdenum content to the alloy being in a range of 0.1-50 wt %, the alloy having crystal precedence orientation of {110}. In one preferred form, the absorbing material pattern is provided on an amolphous metal layer formed on the mask membrane.

摘要翻译： 适用于X射线光刻的掩模具有在膜上形成的膜和辐射吸收材料图案，其中辐射吸收材料图案包含包含钨（W）和钼（Mo）的合金，钼含量与 该合金的范围为0.1-50wt％，晶体优先取向为{110}的合金。 在一个优选形式中，吸收材料图案设置在形成在掩模膜上的淀粉金属层上。

公开(公告)号：US4735877A

公开(公告)日：1988-04-05

申请号：US915376

申请日：1986-10-06

申请人： Hideo Kato ,  Yoshie Izawa ,  Keiko Chiba

发明人： Hideo Kato ,  Yoshie Izawa ,  Keiko Chiba

IPC分类号： G03F1/22 ,  G03F7/20 ,  G03F7/10

CPC分类号： G03F1/22 ,  G03F7/7035 ,  G03F7/70375

摘要： There is disclosed a lithographic mask structure which comprises a masking material support film and an annular support substrate for supporting the masking material support film at the periphery, the masking material support film containing a fluorescent substance. Also disclosed is a lithographic process for exposing a photosensitive material to irradiation with a radiation beam through a masking material support film provided with a masking material pattern-wise.

摘要翻译： 公开了一种光刻掩模结构，其包括掩模材料支撑膜和用于在外围支撑掩模材料支撑膜的环形支撑基板，所述掩模材料支撑膜含有荧光物质。 还公开了一种光刻工艺，用于将感光材料暴露于通过图案化地设置有掩模材料的掩模材料支撑膜的辐射束照射。

公开(公告)号：US06728332B2

公开(公告)日：2004-04-27

申请号：US09970826

申请日：2001-10-05

申请人： Keiko Chiba ,  Masami Tsukamoto ,  Yutaka Watanabe ,  Shinichi Hara ,  Hiroshi Maehara

发明人： Keiko Chiba ,  Masami Tsukamoto ,  Yutaka Watanabe ,  Shinichi Hara ,  Hiroshi Maehara

IPC分类号： G21K300

CPC分类号： G03F1/62 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

摘要： An exposure method for transferring a pattern of a mask onto a member to be exposed. The method includes the steps of making preparations for exposure while a protection cover is attached to the mask, executing alignment between the member to be exposed and the mask while the protection cover is detached from the mask, and executing exposure with X-rays while the protection cover is detached from the mask.

摘要翻译： 一种用于将掩模图案转印到要曝光的构件上的曝光方法。 该方法包括以下步骤：当保护盖附着到掩模上时，进行曝光准备，在保护盖与掩模分离的同时执行被曝光元件与掩模之间的对准，并且执行X射线曝光 防护罩与面罩分离。

公开(公告)号：US06723475B2

公开(公告)日：2004-04-20

申请号：US09842056

申请日：2001-04-26

申请人： Masami Tsukamoto ,  Keiko Chiba

发明人： Masami Tsukamoto ,  Keiko Chiba

IPC分类号： G03F900

CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  C23C8/04 ,  C23C14/3464 ,  C23C28/00 ,  G03F1/24 ,  G03F7/702 ,  G03F7/70233 ,  G03F7/70283 ,  G21K2201/067

摘要： A reflection-type mask for use in exposing a pattern onto a photosensitive material, wherein the mask includes a reflection area, having a multilayer film, for reflecting exposure light, and a non-reflection area which does not reflect the exposure light, the reflection area and the non-reflection area forming a mask pattern, wherein at least one layer of the multilayer film consists of an impurity semiconducter, whereby bad influences, for example, caused by poor conduction of the multilayer film at mask-production stage, can be prevented.

摘要翻译： 一种用于将图案曝光到感光材料上的反射型掩模，其中所述掩模包括具有用于反射曝光光的多层膜的反射区域和不反映曝光光的非反射区域，所述反射 区域和形成掩模图案的非反射区域，其中多层膜的至少一层由杂质半导体构成，由此，例如由掩模制造阶段的多层膜的导通性差导致的不良影响可以是 防止了

公开(公告)号：US06627468B2

公开(公告)日：2003-09-30

申请号：US09875009

申请日：2001-06-07

申请人： Keiko Chiba

发明人： Keiko Chiba

IPC分类号： H01L2100

CPC分类号： G03F7/70158 ,  C03C3/06 ,  C03C15/00 ,  C03C2201/02 ,  C03C2201/23 ,  G02B5/1857 ,  G03F7/70316 ,  G03F7/70958

摘要： The present invention provides a method for manufacturing an optical element to be used for an optical system and an optical instrument using the optical system, and a method for manufacturing a device using the optical instrument, wherein the optical element is manufactured by the steps including the steps for processing a high purity silica glass by lithography, and the hydrogen molecule content is adjusted after manufacturing the optical element.

摘要翻译： 本发明提供了一种用于制造用于光学系统的光学元件的方法和使用该光学系统的光学仪器，以及一种使用该光学仪器的装置的制造方法，其中该光学元件由包括 通过光刻处理高纯度二氧化硅玻璃的步骤，并且在制造光学元件之后调节氢分子含量。

公开(公告)号：US06605392B2

公开(公告)日：2003-08-12

申请号：US09335494

申请日：1999-06-18

申请人： Takahiro Matsumoto ,  Keiko Chiba

发明人： Takahiro Matsumoto ,  Keiko Chiba

IPC分类号： G03F900

CPC分类号： G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  G03F7/70983

摘要： An X-ray mask structure for use in X-ray lithography includes an X-ray transmission film to be disposed opposed to a workpiece in X-ray exposure, the X-ray transmission film having an X-ray absorptive material corresponding to a pattern to be printed on the workpiece, and a thin film covering at least a portion of the X-ray transmission film, the thin film having an anti-reflection function with respect to alignment light to be projected to the thin film for direct or indirect detection of relative positional deviation between the mask structure and the workpiece.

摘要翻译： 用于X射线光刻的X射线掩模结构包括在X射线曝光中与工件相对设置的X射线透射膜，X射线透射膜具有对应于图案的X射线吸收材料 被印刷在工件上，薄膜覆盖至少一部分X射线透射膜，薄膜具有相对于对准光的抗反射功能，以投射到薄膜上用于直接或间接检测 掩模结构和工件之间的相对位置偏差。

公开(公告)号：US6087076A

公开(公告)日：2000-07-11

申请号：US968589

申请日：1997-11-13

申请人： Keita Sakai ,  Keiko Chiba ,  Hiroshi Maehara

发明人： Keita Sakai ,  Keiko Chiba ,  Hiroshi Maehara

IPC分类号： G03F7/004 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/0048

摘要： A method of manufacturing semiconductor devices includes a coating step for coating a substrate using a resist solution including a base resin and a low-oxygen or oxygen-free solvent in which oxygen is removed by nitrogen bubbling, a heating step for heating the substrate coated with the resist, an exposing step for exposing the substrate with radiation to transfer a pattern, and a developing step for developing the exposed substrate. The coating step, the heating step, the exposing step and the developing step are performed under an environment controlled in a low-oxygen or oxygen-free state.

摘要翻译： 一种制造半导体器件的方法包括：涂覆步骤，用于使用包含基础树脂的抗蚀剂溶液和通过氮气鼓泡除去氧的低氧或无氧溶剂的涂覆步骤，用于加热涂覆有 抗蚀剂，用于用辐射曝光衬底以转印图案的曝光步骤，以及用于显影曝光的衬底的显影步骤。 涂布步骤，加热步骤，曝光步骤和显影步骤在控制在低氧或无氧状态的环境下进行。

公开(公告)号：US5422921A

公开(公告)日：1995-06-06

申请号：US975521

申请日：1992-11-12

申请人： Keiko Chiba

发明人： Keiko Chiba

IPC分类号： G03F1/22 ,  G21K5/00 ,  G11B11/00 ,  H01L39/00

CPC分类号： G03F1/22

摘要： An X-ray mask structure includes an X-ray absorber having a masking pattern, an X-ray permeable film for supporting the X-ray absorber on a surface of the X-ray permeable film, and a supporting frame for supporting the X-ray permeable film. The X-ray mask structure has a metal oxide film formed on a portion of the surface of the X-ray permeable film having no X-ray absorber thereon. Also disclosed is a method for manufacturing such an X-ray mask structure.

摘要翻译： X射线掩模结构包括具有掩模图案的X射线吸收体，用于在X射线透过膜的表面上支撑X射线吸收体的X射线透过膜，以及用于支撑X射线透过膜的支撑框架， 透射膜。 X射线掩模结构在其上没有X射线吸收体的X射线透过膜的表面的一部分上形成有金属氧化物膜。 还公开了一种用于制造这种X射线掩模结构的方法。