Abstract:
There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.
Abstract:
An integrated circuit device includes: a driving voltage output unit that outputs a driving voltage supplied to a segment electrode of an electro-optical panel; a display data storage unit that stores display data; and a driving waveform information output unit that outputs driving waveform information when a display state of the segment electrode is changed from a first display state corresponding to first display data to a second display state corresponding to second display data, wherein the driving voltage output unit outputs the driving voltage specified by the first display data and the second display data from the display data storage unit, and the driving waveform information from the driving waveform information output unit.
Abstract:
There is provided a resist underlayer film used in lithography process that has a high n value and a low k value, and can effectively reduce reflection of light having a wavelength of 193 nm from the substrate in a three-layer process in which the resist underlayer film is used in combination with a silicon-containing intermediate layer. A resist underlayer film-forming composition used in lithography process including: a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound. The condensed heterocyclic compound is a carbazole compound or a substituted carbazole compound. The bicyclo ring compound is dicyclopentadiene, substituted dicyclopentadiene, tetracyclo[4.4.0.12,5.17,10]dodeca-3,8-diene, or substituted tetracyclo[4.4.0.12,5.17,10]dodeca-3,8-diene.
Abstract:
The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer comprises a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent.
Abstract:
There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1): O—Ar1 Formula (1) (in Formula (1), Ar1 is a C6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2): O—Ar2—O—Ar3-T-Ar4 Formula (2) (in Formula (2), Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar1 and Ar2 containing arylene group may be organic groups containing a fluorene structure.
Abstract:
There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.
Abstract:
A device capable of having an easy production process and achieving a long lifetime. The device has a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes. The positive hole injection transport layer has a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent.
Abstract:
It is an object to provide a coating composition applicable to “reversal patterning” and suitable for forming a film covering a resist pattern. The object is accomplished by a coating composition for lithography comprising an organopolysiloxane, a solvent containing the prescribed organic solvent as a main component, and a quaternary ammonium salt or a quaternary phosphonium salt; or a coating composition for lithography comprising a polysilane, a solvent containing the prescribed organic solvent as a main component, and at least one additive selected from a group consisting of a crosslinking agent, a quaternary ammonium salt, a quaternary phosphonium salt, and a sulfonic acid compound, wherein the polysilane has, at a terminal thereof, a silanol group or a silanol group together with a hydrogen atom.
Abstract:
In a personal data assistant, a main body includes an input sheet, which is turnable between a first position where at least a part of a display unit of the personal data assistant is covered and a second position where the display unit is not covered. The input sheet has various types of keys formed thereon. When any one of the keys is pressed on the input sheet, a pressure is applied to an input device formed on the display unit, and an input coordinate is detected by the change of, for example, the resistance value of the input device. Since the surface of the display unit is not entirely covered with the input sheet, the display in the range of the display unit which is not covered with the input sheet is not made dark. Further, since the input device is not directly touched with a finger, the input device is prevented from being made dirty, and the display of the display unit under the input device is prevented from being difficult to be seen. Accordingly, the operability of the personal data assistant can be improved while displaying information clearly.
Abstract:
In an image processor on multi-level image data, an edge direction of a target pixel is discriminated from differences in density level between the target pixel and adjacent pixels thereof. A pixel is divided into a plurality of sub-pixels, and the image is formed in the unit of sub-pixels. The density level is set for each of the sub-pixels in the target pixel in accordance with the discrimination on the edge direction of the target pixel so that the center of gravity in density is changed in the target level. Then a character edge portion is reproduced more smoothly.