公开(公告)号：US08294351B2

公开(公告)日：2012-10-23

申请号：US12920011

申请日：2009-02-19

申请人： Makoto Yamamoto ,  Keisuke Koga

发明人： Makoto Yamamoto ,  Keisuke Koga

IPC分类号： H01J1/30 ,  H01J1/62

CPC分类号： H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2329/4604 ,  H01J2329/4643

摘要： A matrix-type cold-cathode electron source device includes a mesh structure (8) on which through-holes (9) are formed and drive portions (7a, 7b). The through-hole (9) has an opening diameter of 1/N or less of the alignment pitch of electron source elements (4) and the drive portions (7a, 7b) drive the mesh structure (8) every 1/N of the alignment pitch of the electron source elements (4). Thus it is possible to increase a resolution without reducing the size of an electron source.

摘要翻译： 矩阵型冷阴极电子源器件包括其上形成有通孔（9）的网状结构（8）和驱动部（7a，7b）。 通孔（9）的开口直径为电子源元件（4）的取向间距的1 / N以下，驱动部（7a，7b）每隔1 / N驱动网状结构（8） 电子源元件（4）的对准间距。 因此，可以在不减小电子源尺寸的情况下提高分辨率。

公开(公告)号：US20120234034A1

公开(公告)日：2012-09-20

申请号：US13511458

申请日：2010-11-19

申请人： Yuuji Nakano ,  Hiroshi Shibata ,  Keisuke Koga ,  Mutsuhiko Matsumoto ,  Keisuke Tsuji

发明人： Yuuji Nakano ,  Hiroshi Shibata ,  Keisuke Koga ,  Mutsuhiko Matsumoto ,  Keisuke Tsuji

IPC分类号： F25D31/00 ,  F25B39/04 ,  F25B39/02

CPC分类号： H05K7/20681 ,  F28D15/0266

摘要： A heat generating body box housing refrigeration device includes a first refrigerant cycle in which a first condenser and a first evaporator are connected by a first refrigerant liquid pipe and a first refrigerant steam pipe and a second refrigerant cycle in which a second condenser and a second evaporator are connected by a second refrigerant liquid pipe and a second refrigerant steam pipe. The first refrigerant liquid pipe is connected between a first joint and a second joint, the first refrigerant steam pipe is connected between a third joint and a fourth joint, the second refrigerant liquid pipe is connected between a fifth joint and a sixth joint, and the second refrigerant steam pipe is connected between a seventh joint and an eighth joint.

摘要翻译： 发热体箱体的制冷装置包括：第一制冷剂循环，其中第一冷凝器和第一蒸发器通过第一制冷剂液体管和第一制冷剂蒸汽管和第二制冷剂循环连接，第二制冷剂循环中第二冷凝器和第二蒸发器 通过第二制冷剂液体管道和第二制冷剂蒸汽管道连接。 第一制冷剂液体管连接在第一接头和第二接头之间，第一制冷剂蒸汽管连接在第三接头和第四接头之间，第二制冷剂液体管连接在第五接头和第六接头之间， 第二制冷剂蒸汽管连接在第七关节和第八关节之间。

公开(公告)号：US20110001421A1

公开(公告)日：2011-01-06

申请号：US12920011

申请日：2009-02-19

申请人： Makoto Yamamoto ,  Keisuke Koga

发明人： Makoto Yamamoto ,  Keisuke Koga

IPC分类号： H01J1/30 ,  H01J1/62

CPC分类号： H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2329/4604 ,  H01J2329/4643

摘要： A matrix-type cold-cathode electron source device includes a mesh structure (8) on which through-holes (9) are formed and drive portions (7a, 7b). The through-hole (9) has an opening diameter of 1/N or less of the alignment pitch of electron source elements (4) and the drive portions (7a, 7b) drive the mesh structure (8) every 1/N of the alignment pitch of the electron source elements (4). Thus it is possible to increase a resolution without reducing the size of an electron source.

摘要翻译： 矩阵型冷阴极电子源器件包括其上形成有通孔（9）的网状结构（8）和驱动部（7a，7b）。 通孔（9）的开口直径为电子源元件（4）的取向间距的1 / N以下，驱动部（7a，7b）每隔1 / N驱动网状结构（8） 电子源元件（4）的对准间距。 因此，可以在不减小电子源尺寸的情况下提高分辨率。

公开(公告)号：US20070188091A1

公开(公告)日：2007-08-16

申请号：US11706939

申请日：2007-02-13

申请人： Junichi Kimiya ,  Keisuke Koga ,  Makoto Yamamoto

发明人： Junichi Kimiya ,  Keisuke Koga ,  Makoto Yamamoto

IPC分类号： H01J1/62

CPC分类号： H01J1/46 ,  H01J3/021 ,  H01J29/467 ,  H01J31/123

摘要： An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a mesh structure and reaches a target. Each of the plurality of through holes in the mesh structure has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The mesh structure is formed of a silicon-containing material doped with a N-type or P-type material. In this way, it is possible to suppress a decrease in the amount of the electron beam reaching the target while securing a mechanical strength of an electrode provided with a large number of through holes, and suppress expansion of the electron beam on the target.

摘要翻译： 从场发射电子源阵列发射的电子束通过形成在网状结构中的多个通孔并达到目标。 网格结构中的多个通孔中的每一个在场致发射电子源阵列的一侧具有开口，以及从开口延续的电子束通道。 网状结构由掺杂有N型或P型材料的含硅材料形成。 以这种方式，可以在确保具有大量通孔的电极的机械强度的同时，抑制到达目标的电子束的量的减少，并且抑制电子束在靶上的膨胀。

公开(公告)号：US20060066198A1

公开(公告)日：2006-03-30

申请号：US11230156

申请日：2005-09-19

申请人： Makoto Yamamoto ,  Keisuke Koga ,  Akinori Shiota

发明人： Makoto Yamamoto ,  Keisuke Koga ,  Akinori Shiota

IPC分类号： H01J9/02

CPC分类号： H01J1/312 ,  B82Y10/00 ,  H01J31/127

摘要： An electron source apparatus includes a plurality of electron emission portions arranged in a matrix on a Si substrate, and a plurality of emitter lines and a plurality of gate lines that are orthogonal to each other, and each of the plurality of electron emission portions being controlled by signals from the plurality of emitter lines and the plurality of gate lines to perform an independent electron emission operation. Furthermore, device isolation regions are provided surrounding the respective plurality of emitter lines, contact holes are formed in the respective plurality of emitter lines, a plurality of emitter line mounting electrodes that correspond to the respective plurality of emitter lines are provided in a region outside regions that are surrounded by the device isolation regions, and conductors that are connected to the respective plurality of emitter line mounting electrodes are connected via the contact holes to the respective plurality of emitter lines corresponding to the respective plurality of emitter line mounting electrodes. Accordingly, the electron source apparatus can achieve high density and size reduction.

摘要翻译： 电子源装置包括在Si衬底上以矩阵形式布置的多个电子发射部分，以及彼此正交的多条发射极线和多条栅极线，并且多个电子发射部分中的每一个被控制 通过来自多个发射极线和多个栅极线的信号进行独立的电子发射操作。 此外，设置在相应的多个发射极线周围的器件隔离区域，在相应的多个发射极线路中形成接触孔，在多个发射极线的外侧的区域中设置与多个发射极线对应的多个发射极线路安装电极 被连接到相应的多个发射极线路安装电极的导体经由接触孔连接到对应于多个发射极线路安装电极的各个发射极线。 因此，电子源装置可以实现高密度和尺寸减小。

公开(公告)号：US06914373B2

公开(公告)日：2005-07-05

申请号：US10185794

申请日：2002-06-27

申请人： Takashi Itoh ,  Masahide Yamauchi ,  Koji Fujii ,  Keisuke Koga ,  Toru Kawase

发明人： Takashi Itoh ,  Masahide Yamauchi ,  Koji Fujii ,  Keisuke Koga ,  Toru Kawase

IPC分类号： H01J29/04 ,  H01J29/48 ,  H01J1/02 ,  H01J29/70

CPC分类号： H01J29/481

摘要： A cathode ray tube according to the present invention include a cold cathode electron gun, the cold cathode electron gun including a cold cathode array for emitting electrons through field emission, a gate electrode for controlling the field emission, a first selective electrode provided around the cold cathode array and the gate electrode, and a second selective electrode opposing the first selective electrode, and the second selective electrode is adapted to have a lower potential than the gate electrode and the first selective electrode. In accordance with this configuration, the divergence of electron beams emitted from any positions in the cold cathode array can be converged uniformly upon removing electron beams emitted at a great emission angle. This allows the electron beams thereafter to be made narrower by an electrostatic lens. As a result, the present invention can provide a cathode ray tube capable of forming a high-resolution image.

摘要翻译： 根据本发明的阴极射线管包括冷阴极电子枪，冷阴极电子枪包括用于通过场发射发射电子的冷阴极阵列，用于控制场致发射的栅电极，围绕冷端设置的第一选择电极 阴极阵列和栅电极以及与第一选择电极相对的第二选择电极，并且第二选择电极适于具有比栅电极和第一选择电极低的电位。 根据这种结构，从冷阴极阵列中的任何位置发射的电子束的发散度可以均匀地会聚在去除以大的发射角发射的电子束。 这样可以使静电透镜之后的电子束变窄。 结果，本发明可以提供能够形成高分辨率图像的阴极射线管。

公开(公告)号：US06812654B2

公开(公告)日：2004-11-02

申请号：US10399738

申请日：2003-09-02

申请人： Keisuke Koga ,  Toru Kawase

发明人： Keisuke Koga ,  Toru Kawase

IPC分类号： G09G104

CPC分类号： H01J29/481 ,  H01J1/3042

摘要： The object of the present invention is to provide a field emission device that emits an electron beam bundle whose spot profile on a display screen has as little distortion as possible, and that maintains a stable electron emission property regardless of the length of a driving time, a CRT apparatus equipped with such field emission device, and a production method of such CRT apparatus. The field emission device (10) has, on a surface of a substrate (11), a plurality of cathode electrodes (12) parallel to each other, an insulation layer (13), and a plurality of extraction electrodes (14) parallel to each other, in the stated order, the cathode electrodes (12) and the extraction electrodes (14) being orthogonal to each other and so yielding a plurality of crossover regions. At the crossover regions, electron emission zones (15) each made up of four emitters (16) are formed. One or more of the electron emission zones (15) are selected by controlling the applied voltage between the cathode electrodes (12) and the extraction electrodes (14), according to an area of the display screen to be irradiated with the electron beam bundle.

摘要翻译： 本发明的目的是提供一种发射电子束束的场致发射器件，其中显示屏上的光斑轮廓具有尽可能小的失真，并且保持稳定的电子发射特性，而与驱动时间的长度无关， 配备有这种场发射装置的CRT装置以及这种CRT装置的制造方法。场发射装置（10）在基板（11）的表面上具有彼此平行的多个阴极电极（12） ，绝缘层（13）和多个彼此平行的提取电极（14），所述阴极电极（12）和提取电极（14）按顺序相互正交，从而产生多个 在交叉区域中，形成由四个发射体（16）构成的电子发射区（15）。 根据要用电子束束照射的显示屏的面积，通过控制阴极电极（12）和提取电极（14）之间的施加电压来选择一个或多个电子发射区（15）。

公开(公告)号：US5925891A

公开(公告)日：1999-07-20

申请号：US833191

申请日：1997-04-14

申请人： Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

发明人： Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

IPC分类号： H01J9/02 ,  H01L29/06 ,  H01J1/16 ,  H01J19/10

CPC分类号： H01J9/025 ,  H01J2201/30426

摘要： A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

摘要翻译： 引出电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。 在上下氧化硅膜和引出电极的各个开口中形成塔状阴极。 每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小半径的尖锐尖端部分。 暴露在上，下氧化硅膜和阴极的开口中的硅衬底的区域的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

公开(公告)号：US4948238A

公开(公告)日：1990-08-14

申请号：US321683

申请日：1989-03-10

申请人： Nobuhiro Araki ,  Takeo Sato ,  Koichi Kawata ,  Noboru Nomura ,  Keisuke Koga

发明人： Nobuhiro Araki ,  Takeo Sato ,  Koichi Kawata ,  Noboru Nomura ,  Keisuke Koga

IPC分类号： G02B13/00 ,  G02B13/18 ,  G02B13/24

CPC分类号： G02B13/18 ,  G02B13/00 ,  G02B13/24

摘要： A first lens, a second lens, means and a third lens means are arranged successively in a direction of travel of a ray. The first lens means each comprising a single lens element power. The second lens means has a predetermined negative refracting power. The third lens means has a predetermined positive refracting power. A fourth lens means consisting of a plurality of lens elements follows the third lens means in the direction of travel of the ray and has a predetermined positive refracting power. At least one surface of the first, second, third, and fourth lens elements is aspherical. The follwoing conditions (1), (2), and (3) are satisfied:4f

公开(公告)号：US08384281B2

公开(公告)日：2013-02-26

申请号：US12991005

申请日：2009-04-27

申请人： Makoto Yamamoto ,  Keisuke Koga

发明人： Makoto Yamamoto ,  Keisuke Koga

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J1/46

CPC分类号： H01J3/022 ,  H01J1/3044 ,  H01J29/04 ,  H01J29/467 ,  H01J29/481 ,  H01J2203/0212 ,  H01J2329/4608

摘要： A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).

摘要翻译： 矩阵型冷阴极电子源器件包括：布置有多个发射极的发射极阵列（3b）和与发射极阵列（3b）相对的栅电极（5）。 栅极（5）包括：与发射极阵列（3b）相对的发射极区域栅电极（5c）; 将所述发射极区域栅电极（5c）连接到栅极信号线（8a）的栅极寻址电极（5a）; 以及设置在栅极寻址电极（5a）和发射极区域栅电极（5c）之间的高电阻区域（5b）。