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    Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry
    3.
    发明授权
    Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry 有权
    在集成电路的制造中形成沟槽隔离的方法和制造集成电路的方法

    公开(公告)号：US08349699B2

    公开(公告)日：2013-01-08

    申请号：US13211174

    申请日：2011-08-16

    Applicant: Robert D. Patraw ,  Martin Ceredig Roberts ,  Keith R. Cook

    Inventor： Robert D. Patraw ,  Martin Ceredig Roberts ,  Keith R. Cook

    IPC: H01L21/76

    CPC classification number: H01L21/76229

    Abstract: First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.

    Abstract translation: 第一和第二隔离沟槽形成半导体衬底的半导体材料。 第一隔离沟槽具有比第二隔离沟槽小的最小横截面尺寸。 绝缘层沉积在第一和第二隔离沟槽内，有效地填充半导体材料内的第一隔离沟槽的剩余容积，而不是半导体材料内的第二隔离沟槽的剩余体积。 绝缘层包括从流动TEOS沉积到第一和第二隔离沟槽的二氧化硅。 通过在半导体材料内的第二隔离沟槽内流动TEOS，而不是在半导体材料内的第一隔离沟槽内，在沉积的二氧化硅上沉积自旋电介质。 沉积电介质有效地填充半导体材料内的第二隔离沟槽的剩余体积。 旋转电介质在第二隔离沟槽内致密化。

    Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry
    4.
    发明授权
    Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry 有权
    在集成电路的制造中形成沟槽隔离的方法和制造集成电路的方法

    公开(公告)号：US08012847B2

    公开(公告)日：2011-09-06

    申请号：US11097876

    申请日：2005-04-01

    Applicant: Robert D. Patraw ,  M. Ceredig Roberts ,  Keith R. Cook

    Inventor： Robert D. Patraw ,  M. Ceredig Roberts ,  Keith R. Cook

    IPC: H01L21/76

    CPC classification number: H01L21/76229

    Abstract: First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.

    Abstract translation: 第一和第二隔离沟槽形成半导体衬底的半导体材料。 第一隔离沟槽具有比第二隔离沟槽小的最小横截面尺寸。 绝缘层沉积在第一和第二隔离沟槽内，有效地填充半导体材料内的第一隔离沟槽的剩余容积，而不是半导体材料内的第二隔离沟槽的剩余体积。 绝缘层包括从流动TEOS沉积到第一和第二隔离沟槽的二氧化硅。 通过在半导体材料内的第二隔离沟槽内流动TEOS，而不是在半导体材料内的第一隔离沟槽内，在沉积的二氧化硅上沉积自旋电介质。 沉积电介质有效地填充半导体材料内的第二隔离沟槽的剩余体积。 旋转电介质在第二隔离沟槽内致密化。

    Clutch for power door lock actuator
    6.
    发明授权
    Clutch for power door lock actuator 失效
    离合器电动门锁致动器

    公开(公告)号：US4850466A

    公开(公告)日：1989-07-25

    申请号：US197070

    申请日：1988-05-19

    Applicant: Deno J. Rogakos ,  Lynn M. Johnston ,  Keith R. Cook

    Inventor： Deno J. Rogakos ,  Lynn M. Johnston ,  Keith R. Cook

    IPC: E05B47/00 ,  E05B65/12 ,  E05B65/20 ,  F16D43/14 ,  F16D43/18

    CPC classification number: E05B81/25 ,  F16D43/18 ,  E05B81/46

    Abstract: A power door lock actuator includes a one piece molded and centrifugally expandable brake ring that is held on a drive ring to a motor shaft within a lock lift arm driving cup that is freely pivoted to the shaft. A camming member on the drive ring fits within the brake ring so as to retain it to the shaft, to maintain it in a ready position spaced from the cup when stationary, and so as to jam it into the wall of the cup when turning.

    Abstract translation: 电动门锁致动器包括一体式模制和离心可扩张的制动环，该制动环在可自由枢转到轴的锁提升臂驱动杯内保持在电动机轴的驱动环上。 驱动环上的凸轮构件安装在制动环内以便将其保持在轴上，以在静止时将其保持在与杯子间隔开的就绪位置，并且当转动时将其卡入杯子的壁中。

    Power window control with tape drive tension release
    7.
    发明授权
    Power window control with tape drive tension release 失效
    电动车窗控制带磁带张紧释放

    公开(公告)号：US4633153A

    公开(公告)日：1986-12-30

    申请号：US832439

    申请日：1986-02-24

    Applicant: Dennis P. Thornton ,  John S. Maceross ,  Jeff A. Foust ,  Keith R. Cook

    Inventor： Dennis P. Thornton ,  John S. Maceross ,  Jeff A. Foust ,  Keith R. Cook

    IPC: E05F15/16 ,  H02P1/22

    CPC classification number: E05F15/695 ,  E05Y2201/604 ,  E05Y2201/652 ,  E05Y2400/32 ,  E05Y2400/336 ,  E05Y2400/358 ,  E05Y2800/407 ,  E05Y2800/73 ,  E05Y2900/55

    Abstract: Motor control apparatus is disclosed for a motor driven vehicle power window mechanism including a flexible drive element, such as a drive tape, adapted to drive the window in a predetermined direction by being placed in tension by the motor. The tension of the flexible drive element is relieved by automatically reversing motor direction for a short time when the window reaches the desired position. The reverse motor rotation is accurately controlled to an amount sufficient to relieve drive tension but insufficient to produce unwanted reverse movement of the window by detecting the pulses of the armature ripple current as the successive commutator bars pass the brushes during reverse motor rotation, integrating these pulses and stopping the reverse motor operation when the integrated value reaches a predetermined reference.

    Abstract translation: 公开了一种用于电机驱动的车辆电动车窗机构的电动机控制装置，其包括柔性驱动元件，例如驱动带，其适于通过由电动机放置在张力中而沿预定方向驱动窗户。 当窗口到达所需位置时，柔性驱动元件的张力可以在短时间内自动反转电动机方向而减轻。 反向电动机旋转被精确地控制到足以减轻驱动张力的量，但是当反向电动机旋转期间连续的换向器杆通过电刷时，通过检测电枢纹波电流的脉冲而不足以产生不期望的窗口的反向运动，将这些脉冲 并且当积分值达到预定参考值时停止反向电动机操作。

    Methods of Forming Trench Isolation in the Fabrication of Integrated Circuitry and Methods of Fabricating Integrated Circuitry
    9.
    发明申请
    Methods of Forming Trench Isolation in the Fabrication of Integrated Circuitry and Methods of Fabricating Integrated Circuitry 有权
    集成电路制造中形成沟槽隔离的方法和制造集成电路的方法

    公开(公告)号：US20110300689A1

    公开(公告)日：2011-12-08

    申请号：US13211174

    申请日：2011-08-16

    Applicant: Robert D. Patraw ,  M. Ceredig Roberts ,  Keith R. Cook

    Inventor： Robert D. Patraw ,  M. Ceredig Roberts ,  Keith R. Cook

    IPC: H01L21/762

    CPC classification number: H01L21/76229

    Abstract: First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.

    Abstract translation: 第一和第二隔离沟槽形成半导体衬底的半导体材料。 第一隔离沟槽具有比第二隔离沟槽小的最小横截面尺寸。 绝缘层沉积在第一和第二隔离沟槽内，有效地填充半导体材料内的第一隔离沟槽的剩余容积，而不是半导体材料内的第二隔离沟槽的剩余体积。 绝缘层包括从流动TEOS沉积到第一和第二隔离沟槽的二氧化硅。 通过在半导体材料内的第二隔离沟槽内流动TEOS，而不是在半导体材料内的第一隔离沟槽内，在沉积的二氧化硅上沉积自旋电介质。 沉积电介质有效地填充半导体材料内的第二隔离沟槽的剩余体积。 旋转电介质在第二隔离沟槽内致密化。

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