摘要:
An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.
摘要:
A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein R1 and R4 each independently represent an alkyl group having 1-16 carbon atoms; R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and R5 represents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.
摘要翻译:本发明的主题是提供具有高蒸气压和高热稳定性的新型钛络合物,并且通过诸如CVD法或ALD法的技术制造含钛薄膜的优异材料,并进一步提供 用于制备这些络合物的方法,由络合物制备的含钛薄膜以及薄膜的制造方法。 本发明涉及制备由通式(1)表示的钛络合物:(其中R 1和R 4各自独立地表示具有1-16个碳原子的烷基; R 2和R 3各自独立地表示氢原子或具有1- 3个碳原子; R5表示具有1-16个碳原子并且可以被一个或多个氟原子取代的烷基),并使用该络合物制备含钛薄膜。
摘要:
Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.
摘要:
A radio selective calling receiver which allows anybody to read characters easily which disappear when a message is scrolled up on a screen by means of a simple display. A control circuit 2 is used to scroll the message displayed on the screen vertically in units of a dot and to switch characters on a line which gradually disappear due to the scrolling to a simple display which can be recognized as characters at the point when they cannot be recognized as characters, based on a switch operation of a switching circuit 5.
摘要:
A radio selective calling receiver includes at least a loudspeaker, a function setting switch, a display unit, a timer, and a time-out display control section. The loudspeaker notifies an incoming call by generating a sound. The function setting switch is operated by a user to set various functions. The display unit displays a message accompanying the incoming call, and the set contents of a predetermined function of the various functions. The timer counts an elapsed time from the start of an operation of the function setting switch to the end of a time-out time. The time-out display control section causes the display unit to display a counted time, obtained by the timer, until the end of the time-out time.
摘要:
A radio selective calling receiver that enables to restrain the vibration strength change of a warning vibrator independent of the supply voltage change of a dc power supply. This receiver contains a warning controller for controlling a specified warning operation including a warning vibration to give a warning to a user on receipt of a calling signal, a vibrator for producing the warning vibration by an electric power supplied from a dc power supply, and a switching transistor for switching the electric power supplied to the vibrator to thereby produce the warning vibration intermittently. The transistor has a first state in which the electric power is supplied to the vibrator and a second state in which the electric power is not supplied to the vibrator. The both states are alternately effected by a control signal generated by the warning controller. The receiver further includes a power compensator for compensating change of the electric power supplied to the vibrator to thereby restrain change of a vibration strength of the warning vibration. The compensator adjusts the control signal so that a duration of the first state of the transistor is increased according to the decrease of the electric power supplied to the vibrator.
摘要:
An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.
摘要:
A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases).
摘要:
A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.)
摘要:
Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, R1 and R4 represent an alkyl group having from 1 to 6 carbon atoms. R2 and R3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R5 and R6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).