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39 条记录 (耗时 0.021 秒)

    Dielectric film and method for forming the same
    1.
    发明授权
    Dielectric film and method for forming the same 失效
    介电膜及其形成方法

    公开(公告)号：US06899965B2

    公开(公告)日：2005-05-31

    申请号：US10107334

    申请日：2002-03-28

    申请人： Takashi Nishikawa ,  Kenji Iijima

    发明人： Takashi Nishikawa ,  Kenji Iijima

    IPC分类号： C30B23/02 ,  B32B9/00

    CPC分类号： C30B23/02 ,  C30B29/16

    摘要： After an underlying layer, made of a single crystal metal material, has been formed on a semiconductor layer, part or all of the underlying layer is changed into a metal oxide layer by supplying oxygen thereto from above the underlying layer. Then, a ferroelectric or high-dielectric-constant film is further formed on the metal oxide layer. Since the film made of a metal material is formed on the semiconductor layer, a silicon dioxide film or the like is not formed easily. Thus, a dielectric film, which includes an underlying layer with a high dielectric constant and has a large capacitance per unit area, can be obtained. Various defects such as interface states in the semiconductor layer can also be reduced advantageously if these process steps are performed after a thermal oxide film has been formed on the semiconductor layer.

    摘要翻译： 在半导体层上形成由单晶金属材料构成的下层之后，通过从下面的层的上方向其供给氧而将下层的一部分或全部变成金属氧化物层。 然后，在金属氧化物层上进一步形成铁电或高介电常数膜。 由于在半导体层上形成由金属材料制成的膜，所以不容易形成二氧化硅膜等。 因此，可以获得包括具有高介电常数并且具有每单位面积的大电容的下层的电介质膜。 如果在半导体层上形成热氧化膜之后执行这些工艺步骤，则还可以有利地减少诸如半导体层中的界面态的各种缺陷。

    Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device
    3.
    发明授权
    Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device 失效
    磁头包括多层磁阻器件和用于将磁通从介质引入到磁阻器件的磁轭

    公开(公告)号：US06785100B2

    公开(公告)日：2004-08-31

    申请号：US09829400

    申请日：2001-04-09

    申请人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

    发明人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/11 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/3925 ,  G11B5/398 ,  G11B5/40 ,  G11B2005/3996

    摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.

    摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

    Refrigeration cycle and condenser with supercooling unit
    6.
    发明授权
    Refrigeration cycle and condenser with supercooling unit 有权
    制冷循环和冷凝器与过冷却单元

    公开(公告)号：US09134057B2

    公开(公告)日：2015-09-15

    申请号：US13880693

    申请日：2011-10-07

    申请人： Kenji Iijima

    发明人： Kenji Iijima

    IPC分类号： F25B1/00 ,  F25B39/04 ,  F25B40/00 ,  B60H1/32 ,  F25B40/02

    CPC分类号： F25B39/04 ,  B60H2001/3266 ,  B60H2001/3276 ,  F25B40/00 ,  F25B40/02 ,  F25B2400/121

    摘要： A refrigeration cycle 1 is constituted by joining at least a compressor 2, a condenser 3, a decompression and expansion device 4, and an evaporator 5 to each other by a pipe 6. The condenser 3 is formed of a condenser with a supercooling part including a condensing part 7 and a supercooling part 8. The refrigeration cycle 1 further includes an internal heat exchanger 25. A rate at which the supercooling part 8 occupies with respect to the whole condenser 3 is set to a value which falls within a range of 3% to 9% when the heat exchange efficiency of the internal heat exchanger 25 falls within a range of 25% to 75%.

    摘要翻译： 制冷循环1通过将管道6至少连接至压缩机2，冷凝器3，减压膨胀装置4和蒸发器5构成。冷凝器3由具有过冷部件的冷凝器形成，该过冷却部件包括 冷凝循环1还包括内部热交换器25.过冷却部8相对于整个冷凝器3占有的比例设定为3以下的范围 当内部热交换器25的热交换效率在25％至75％的范围内时，为9％。

    Lens system and camera
    7.
    发明授权
    Lens system and camera 失效
    镜头系统和相机

    公开(公告)号：US06985304B2

    公开(公告)日：2006-01-10

    申请号：US10901690

    申请日：2004-07-29

    申请人： Kenji Iijima

    发明人： Kenji Iijima

    IPC分类号： G02B15/14

    CPC分类号： G02B13/16 ,  G02B15/177

    摘要： A lens system comprising a first lens group with a negative refractive power, a second lens group with a positive refractive power, and a third lens group with a positive refractive power arranged in this order from an object side, wherein a focal length f2 of the second lens group, a focal length f3 of the third lens group and a radius of curvature Rm of an object side-surface of a lens that is closest to the object side in the second lens group satisfy following conditions 0.30

    摘要翻译： 一种透镜系统，包括具有负折光力的第一透镜组，具有正折光力的第二透镜组和具有正折射光焦度的第三透镜组，所述第三透镜组从物体侧依次排列，其中焦距f 2 第二透镜组，第三透镜​​组的焦距f 3和第二透镜组中最靠近物体侧的透镜的物体侧表面的曲率半径Rm满足以下条件 -formulae description =“In-line Formulas”end =“lead”？> 0.30 <？in -line-formula description =“In-line Formulas”end =“lead”？> 0.8

    Expansion device
    8.
    发明授权
    Expansion device 失效
    扩充装置

    公开(公告)号：US06334324B1

    公开(公告)日：2002-01-01

    申请号：US09743024

    申请日：2001-01-04

    申请人： Shunji Muta ,  Hiroshi Kanai ,  Kenji Iijima ,  Shunichi Furuya

    发明人： Shunji Muta ,  Hiroshi Kanai ,  Kenji Iijima ,  Shunichi Furuya

    IPC分类号： F25B4104

    CPC分类号： F25B9/008 ,  F25B40/00 ,  F25B41/062 ,  F25B49/005 ,  F25B2309/061 ,  F25B2341/063 ,  F25B2400/0411

    摘要： An expansion device capable of preventing an abnormal increase in the high-pressure in a freezing cycle and having, as an integrated unit thereof, a mechanism capable of quickly responding to an abnormal increase in the high-pressure and the low-pressure is provided. A means for displacement (bellows) 28 which becomes displaced in correspondence to the high-pressure is linked to a valve element 24 of a restrictor valve mechanism 32 to displace a rod 34 provided with a safety valve mechanism 33. If the high-pressure reaches a level equal to or higher than a first specific pressure (the limit to the normal operating pressure), a first portion 26 of the safety valve mechanism 33 becomes disengaged from a relief hole 27 that communicates between a high-pressure space 29 and a low-pressure passage 31 to be replaced by a second portion 25 which allows passage through the relief hole 27, thereby leaking the coolant in the high-pressure space 29 to the low-pressure passage 31 and preventing a further increase in the high-pressure. In addition, a low-pressure side rupture disk mechanism 40 that becomes ruptured if the low-pressure reaches a level equal to a second specific pressure to communicate between the low-pressure passage 31 and the atmosphere is provided at the low-pressure passage 31. A high-pressure side rupture disk mechanism 50 that becomes ruptured if the high-pressure reaches a level equal to or higher than a third specific pressure to communicate between the high-pressure passage 30 and the atmosphere is provided at the high-pressure passage 30.

    摘要翻译： 提供一种能够防止冷冻循环中的高压异常增加的膨胀装置，并且具有能够快速响应高压和低压异常增加的机构的集成单元。 与限制阀机构32的阀元件24相连接，与高压相对应地移动的位移装置（波纹管）28连接到设置有安全阀机构33的杆34上。如果高压达到 等于或高于第一比压（正常工作压力的极限）的水平，安全阀机构33的第一部分26与高压空间29和低压空间29之间连通的排放孔27脱离 压力通道31被允许通过释放孔27的第二部分25代替，从而将高压空间29中的冷却剂泄漏到低压通道31并防止高压进一步增加。 另外，如果低压侧破裂盘机构40在低压通路31设置低压通路31和大气之间时，如果低压达到等于第二比压的水平而连通的低压侧破裂盘机构40 高压侧破裂盘机构50，如果在高压通路30和大气之间高压达到等于或高于第三比压的连通状态的高压侧破裂盘机构50， 30。

    Process for producing a ferroelectric film device
    10.
    发明授权
    Process for producing a ferroelectric film device 失效
    铁电薄膜器件的制造方法

    公开(公告)号：US5308462A

    公开(公告)日：1994-05-03

    申请号：US938676

    申请日：1992-09-01

    申请人： Kenji Iijima ,  Ryoichi Takayama ,  Yoshihiro Tomita ,  Ichiro Ueda

    发明人： Kenji Iijima ,  Ryoichi Takayama ,  Yoshihiro Tomita ,  Ichiro Ueda

    IPC分类号： H01L41/187 ,  B32B9/00 ,  C04B41/52 ,  C04B41/89 ,  C23C14/08 ,  C23C14/32 ,  C23C14/34 ,  C30B28/12 ,  C30B29/32 ,  G01J5/02 ,  G01J5/34 ,  H01B3/00 ,  H01L37/02

    CPC分类号： H01L37/025 ,  C23C14/08 ,  C23C14/088 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/257

    摘要： For applying ferroelectrics to electronic devices, the poling treatment of the ferroelectrics has been necessary in order to uniform directions of spontaneous polarizations, Ps, in each ferroelectric. This treatment brings about (1) low yields of the devices, (2) difficulties in the fabrication of array devices, and (3) difficulties in the formation of ferroelectric films on semiconductor devices. Now it has been found that a self-polarized film in which spontaneous polarizations, Ps, are unidirectional can be formed by sputtering a ferroelectric materials containing lead under such conditions that the orientation of Ps will be controlled without poling treatment and a high-performance ferroelectric device can be obtained in a high yield by using this film, and thus a process for producing such devices has been found.

    摘要翻译： 为了将铁电体应用于电子器件，铁电体的极化处理是必要的，以便在每个铁电体中均匀自发极化的方向Ps。 这种处理带来（1）器件的低产量，（2）阵列器件的制造困难，（3）在半导体器件上形成铁电薄膜的困难。 现在已经发现，通过溅射含铅的铁电材料可以在这样的条件下形成其中自发极化Ps是单向的自偏振膜，即在不经极化处理的情况下控制Ps的取向和高性能的铁电体 可以通过使用该膜获得高产率的装置，因此已经发现了用于制造这种装置的方法。