公开(公告)号：US20120217474A1

公开(公告)日：2012-08-30

申请号：US13405874

申请日：2012-02-27

申请人： Keyan ZANG ,  Soo Jin CHUA

发明人： Keyan ZANG ,  Soo Jin CHUA

IPC分类号： H01L33/04

CPC分类号： H01L33/24 ,  H01L31/035218 ,  H01L33/06 ,  H01L33/08

摘要： The present invention relates to a photonic device comprising a plurality of nanostructures that extend from a substrate, each nanostructure comprising a generally longitudinal nanostructure body formed of a semiconductor material. Each nanostructure has a proximal end portion of a first crystal lattice structure and a distal end portion of a second crystal lattice structure that is expanded relative to the proximal end portion. Each nanostructure further comprises an optically active material optically associated with the distal end portion to form a heterojunction therebetween. The present invention further relates to a method of making the disclosed nanostructures.

摘要翻译： 本发明涉及包括从衬底延伸的多个纳米结构的光子器件，每个纳米结构包括由半导体材料形成的大致纵向的纳米结构体。 每个纳米结构具有第一晶格结构的近端部分和相对于近端部分膨胀的第二晶格结构的远端部分。 每个纳米结构还包括与远端部分光学相关的光学活性材料，以在它们之间形成异质结。 本发明还涉及制备所公开的纳米结构的方法。

公开(公告)号：US20060270201A1

公开(公告)日：2006-11-30

申请号：US11434399

申请日：2006-05-15

申请人： Soo Chua ,  Yadong Wang ,  Keyan Zang

发明人： Soo Chua ,  Yadong Wang ,  Keyan Zang

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： A technique for growing a high quality gallium nitride layer on a uniform nano-patterned substrate is described. The invented technique is based on the transfer of ordered nano-patterns from a nano-template to the substrate, followed by the growth of gallium nitride on the nano-patterned substrate. The nano-patterned substrate serves as a buffer layer to reduce the stress and dislocations.

摘要翻译： 描述了在均匀的纳米图案化衬底上生长高质量氮化镓层的技术。 本发明的技术基于有序纳米图案从纳米模板转移到衬底，随后在纳米图案化衬底上生长氮化镓。 纳米图案化衬底用作缓冲层以减少应力和位错。

公开(公告)号：US08859399B2

公开(公告)日：2014-10-14

申请号：US13130173

申请日：2009-11-19

申请人： Keyan Zang ,  Jinghua Teng ,  Soo Jin Chua

发明人： Keyan Zang ,  Jinghua Teng ,  Soo Jin Chua

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  Y10S977/742

摘要： A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.

摘要翻译： 从衬底至少部分地释放材料的外延层的方法。 该方法包括以下步骤：在衬底上形成图案化的牺牲层，使得衬底被部分地暴露并被牺牲层部分地覆盖; 通过纳米外延横向过度生长在图案化的牺牲层上生长外延层，使得外延层形成在包括图案化的牺牲层和所述材料的中间层的上方; 并且选择性地蚀刻图案化的牺牲层，使得外延层至少部分地从衬底上释放出来。

公开(公告)号：US20110294281A1

公开(公告)日：2011-12-01

申请号：US13130173

申请日：2009-11-19

申请人： Keyan Zang ,  Jinghua Teng ,  Soo Jin Chua

发明人： Keyan Zang ,  Jinghua Teng ,  Soo Jin Chua

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  Y10S977/742

摘要： A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.

摘要翻译： 从衬底至少部分地释放材料的外延层的方法。 该方法包括以下步骤：在衬底上形成图案化的牺牲层，使得衬底被部分地暴露并被牺牲层部分地覆盖; 通过纳米外延横向过度生长在图案化的牺牲层上生长外延层，使得外延层形成在包括图案化的牺牲层和所述材料的中间层的上方; 并且选择性地蚀刻图案化的牺牲层，使得外延层至少部分地从衬底上释放出来。