利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.023 秒)

    Lamp for rapid thermal processing chamber
    2.
    再颁专利
    Lamp for rapid thermal processing chamber 有权
    快速热处理腔灯

    公开(公告)号：USRE44712E1

    公开(公告)日：2014-01-21

    申请号：US13288586

    申请日：2011-11-03

    申请人： Joseph M. Ranish ,  Khurshed Sorabji

    发明人： Joseph M. Ranish ,  Khurshed Sorabji

    IPC分类号： H01J5/48

    CPC分类号： H01K1/58 ,  H01K1/46 ,  H01L21/67115

    摘要： A lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, a lamp base configured to receive the pair of leads, a sleeve having a wall thickness of at least about 0.013 inches and a potting compound having a thermal conductivity greater than about 100 W/(K-m).

    摘要翻译： 公开了适用于基板热处理室以将基板加热至高达至少约1100℃的温度的灯组件。 在一个实施例中，灯组件包括封闭连接到一对引线的至少一个辐射生成细丝的灯泡，被配置为容纳一对引线的灯座，具有至少约0.013英寸的壁厚的套管和一个灌封 具有大于约100W /（Km）的热导率的化合物。

    MOVABLE LINER ASSEMBLY FOR A DEPOSITION ZONE IN A CVD REACTOR
    3.
    发明申请
    MOVABLE LINER ASSEMBLY FOR A DEPOSITION ZONE IN A CVD REACTOR 有权
    用于CVD反应器中的沉积区的可移动衬套组件

    公开(公告)号：US20130052371A1

    公开(公告)日：2013-02-28

    申请号：US13222881

    申请日：2011-08-31

    申请人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

    发明人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

    IPC分类号： C23C16/48 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

    CPC分类号： C23C16/45565 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/481

    摘要： A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports. The liner assembly is linearly movable away from the fixed showerhead.

    摘要翻译： 化学气相沉积（CVD）反应器包括沉积区，衬底载体和衬垫组件。 沉积区被构造成具有正压反应物气体固定喷头引入反应气体支持薄膜CVD沉积。 衬底载体可移动地将衬底和衬垫组件支撑在沉积区内并被加热以便进行CVD工艺。 衬套组件部分地包围沉积区域的特定部分，特别是衬底载体的部分，从而包围围绕要处理的衬底的热区域，以便在该区域中保持热量，但允许气体径向向外流向周围冷却的壁 - 反应器，其具有围绕沉积区的排气口，排出废反应物气体。 衬套组件是用于固体反应副产物的水槽，而气体反应副产物在排气口处被泵出。 衬套组件可以离开固定式喷头线性移动。

    WAFER CARRIER TRACK
    6.
    发明申请
    WAFER CARRIER TRACK 有权
    拖车履带

    公开(公告)号：US20120090548A1

    公开(公告)日：2012-04-19

    申请号：US13257269

    申请日：2010-03-16

    申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

    发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas G. Hegedus

    IPC分类号： C23C16/458

    CPC分类号： C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

    摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together.

    摘要翻译： 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了用于在气相沉积反应器系统内悬浮和横穿晶片载体的晶片载体轨道，其包括在其间形成有气体腔的轨道组件的上部和下部。 引导路径沿着上部的上表面延伸并且在引导路径上并且彼此平行的两个侧表面之间延伸。 沿着引导路径的多个气孔从上部的上表面延伸穿过上部并进入气体腔。 在一些示例中，轨道组件的上部和下部可以独立地包含石英，并且在一些示例中可以将其熔合在一起。

    SHOWERHEAD FOR VAPOR DEPOSITION
    7.
    发明申请
    SHOWERHEAD FOR VAPOR DEPOSITION 审中-公开
    用于蒸气沉积的淋浴器

    公开(公告)号：US20100229793A1

    公开(公告)日：2010-09-16

    申请号：US12725326

    申请日：2010-03-16

    申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

    发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

    IPC分类号： C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

    摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates.

    摘要翻译： 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种喷头组件，其包括具有延伸穿过主体的上部和下部并且平行于主体的中心轴线延伸的集中通道的主体。 淋浴头组件包括具有第一多个孔并且设置在集中通道内的可选扩散板，具有第二多个孔并且设置在扩散板下方的集中通道内的上管板，具有第三多个的下管板 并且设置在上管板下方的集中通道内，以及从上管板延伸到下管板的多个管。 每个管连接到上管和下管板的各个孔中并与其流体连通。

    HEATING LAMP SYSTEM
    8.
    发明申请
    HEATING LAMP SYSTEM 审中-公开
    加热灯系统

    公开(公告)号：US20100209082A1

    公开(公告)日：2010-08-19

    申请号：US12725314

    申请日：2010-03-16

    申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

    发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

    IPC分类号： C23C16/00 ,  F27B5/14

    CPC分类号： C30B25/10 ,  C23C16/01 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/482 ,  C23C16/54 ,  C30B25/025 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784 ,  H05B3/0047

    摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a heating lamp assembly for a vapor deposition reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a first lamp holder and a second lamp holder and a plurality of lamps extending from the first lamp holder to the second lamp holder. The plurality of lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. The reflector may contain gold or a gold alloy.

    摘要翻译： 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种用于气相沉积反应器系统的加热灯组件，其包括设置在支撑基座的上表面上并包含第一灯座和第二灯座的灯壳，以及从第一 灯架到第二个灯座。 多个灯可以具有裂开的灯丝灯和/或非分裂灯丝灯，并且在一些示例中，分裂和非分裂灯丝可以​​交替地设置在第一和第二灯座之间。 反射器可以设置在第一和第二灯座之间的支撑基座的上表面上。 反射器可以包含金或金合金。