公开(公告)号：US08111726B2

公开(公告)日：2012-02-07

申请号：US12535779

申请日：2009-08-05

Applicant: Kimio Shigihara

Inventor： Kimio Shigihara

IPC: H01S5/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/2031 ,  H01S5/305 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/34333

Abstract: A semiconductor laser device includes: an n-type cladding layer, a p-type cladding layer, an active layer located between the n-type cladding layer and the p-type cladding layer, an n-side guiding layer located on the same side of the active layer as the n-type cladding layer, and a p-side guiding layer located on the same side of the active layer as the p-type cladding layer. The n-side guiding layer, the active layer, and the p-side guiding layer are undoped or substantially undoped. The sum of the thicknesses of the n-side guiding layer, the active layer, and the p-side guiding layer is not less than 0.5 times the lasing wavelength of the semiconductor laser device and is not more than 2 μm. The p-side guiding layer is thinner and has a lower refractive index than the n-side guiding layer.

Abstract translation: 半导体激光装置包括：n型包层，p型包层，位于n型包层和p型包层之间的有源层，位于同一侧的n侧引导层 作为n型包覆层的有源层，以及位于与p型覆层相同的有源层的一侧的p侧引导层。 n侧引导层，有源层和p侧引导层是未掺杂的或基本上未掺杂的。 n侧引导层，有源层和p侧引导层的厚度之和不小于半导体激光器件的激光波长的0.5倍，不大于2μm。 p侧引导层比n侧引导层更薄，折射率低。

公开(公告)号：US07756179B2

公开(公告)日：2010-07-13

申请号：US12031027

申请日：2008-02-14

Applicant: Kimio Shigihara

Inventor： Kimio Shigihara

IPC: H01S5/00

CPC classification number: H01S5/2031 ,  H01S5/2063 ,  H01S5/305 ,  H01S5/3213 ,  H01S5/32316 ,  H01S5/32325 ,  H01S5/32333

Abstract: A semiconductor laser apparatus can improve electric conversion efficiency to a satisfactory extent. The apparatus includes an n-type cladding layer, an n-type cladding layer side guide layer, an active layer, a p-type cladding layer side guide layer, and a p-type cladding layer, wherein electrons and holes are injected into the active layer, transverse to the active layer, through the n-type cladding layer side guide layer and the p-type cladding layer side guide layer. The p-type cladding layer side guide layer is thinner than the n-type cladding layer side guide layer to position the active layer closer to the p-type cladding layer, and, at the same time, the refractive index of the p-type cladding layer side guide layer is higher than the refractive index of the n-type cladding layer side guide layer.

Abstract translation: 半导体激光装置可以将电转换效率提高到令人满意的程度。 该装置包括n型包覆层，n型包层侧引导层，有源层，p型包层侧引导层和p型包层，其中电子和空穴注入到 通过n型包层侧引导层和p型包层侧引导层横向于有源层的有源层。 p型包层侧引导层比n型包层侧引导层薄，使活性层更靠近p型包覆层，同时p型包层侧引导层的折射率 包覆层侧引导层比n型包层侧引导层的折射率高。

公开(公告)号：US20100103970A1

公开(公告)日：2010-04-29

申请号：US12535779

申请日：2009-08-05

Applicant: Kimio Shigihara

Inventor： Kimio Shigihara

IPC: H01S5/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/2031 ,  H01S5/305 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/34333

Abstract: A semiconductor laser device includes: an n-type cladding layer, a p-type cladding layer, an active layer located between the n-type cladding layer and the p-type cladding layer, an n-side guiding layer located on the same side of the active layer as the n-type cladding layer, and a p-side guiding layer located on the same side of the active layer as the p-type cladding layer. The n-side guiding layer, the active layer, and the p-side guiding layer are undoped or substantially undoped. The sum of the thicknesses of the n-side guiding layer, the active layer, and the p-side guiding layer is not less than 0.5 times the lasing wavelength of the semiconductor laser device and is not more than 2 μm. The p-side guiding layer is thinner and has a lower refractive index than the n-side guiding layer.

Abstract translation: 半导体激光装置包括：n型包层，p型包层，位于n型包层和p型包层之间的有源层，位于同一侧的n侧引导层 作为n型包覆层的有源层，以及位于与p型覆层相同的有源层的一侧的p侧引导层。 n侧引导层，有源层和p侧引导层是未掺杂的或基本上未掺杂的。 n侧引导层，有源层和p侧引导层的厚度之和不小于半导体激光器件的激光波长的0.5倍，不大于2μm。 p侧引导层比n侧引导层更薄，折射率低。

公开(公告)号：US07656920B2

公开(公告)日：2010-02-02

申请号：US11284907

申请日：2005-11-23

Applicant: Kimio Shigihara ,  Kazushige Kawasaki ,  Kenichi Ono

Inventor： Kimio Shigihara ,  Kazushige Kawasaki ,  Kenichi Ono

IPC: H01S5/00

CPC classification number: H01S5/3434 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/2063 ,  H01S5/22 ,  H01S5/3404 ,  H01S5/3436 ,  H01S2301/14

Abstract: A semiconductor laser device producing light having a TE-polarized component suitable for practical use (i.e., light having TE-polarized light intensity sufficiently high for practical use). A semiconductor laser device includes a GaAsP active layer, InGaP guide layers, and AlGaInP cladding layers. The GaAsP active layer emits light. The GaAsP active layer is interposed between the InGaP guide layers. The InGaP guide layers and GaAsP active layer are interposed between the AlGaInP cladding layers. Polarization ratio, which is a ratio of light intensity of TM-polarized light to light intensity of TE-polarized light, of the light produced by the semiconductor laser device is less than 2.3.

Abstract translation: 一种半导体激光装置，其具有适用于实际使用的TE极化分量（即实际使用的TE偏振光强度足够高的光）的光。 半导体激光器件包括GaAsP有源层，InGaP导向层和AlGaInP包覆层。 GaAsP有源层发光。 GaAsP有源层介于InGaP引导层之间。 InGaP引导层和GaAsP有源层插入在AlGaInP包覆层之间。 由半导体激光器件产生的光的偏振光比是TM偏振光的光强度与TE偏振光的光强度之比小于2.3。

公开(公告)号：US07259406B2

公开(公告)日：2007-08-21

申请号：US11263997

申请日：2005-11-02

Applicant: Yoshihiko Hanamaki ,  Kenichi Ono ,  Kimio Shigihara ,  Kazushige Kawasaki ,  Kimitaka Shibata ,  Naoyuki Shimada

Inventor： Yoshihiko Hanamaki ,  Kenichi Ono ,  Kimio Shigihara ,  Kazushige Kawasaki ,  Kimitaka Shibata ,  Naoyuki Shimada

IPC: H01L29/24 ,  H01L33/00 ,  H01L29/06 ,  H01L29/12 ,  H01L31/0328

CPC classification number: H01S5/22 ,  H01S5/323

Abstract: A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content)guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.

Abstract translation: 具有包括n型GaAs缓冲层，n型AlGaInP包层，没有添加掺杂杂质的第一InGaAsP（包括零As含量）引导层的半导体光学元件，InGaAsP（包括0 In含量）有源层， 没有添加掺杂剂杂质的第二InGaAsP（包括零As含量）引导层，顺序地层叠在n型GaAs衬底上的p型AlGaInP包层，p型带不连续性还原层和p型GaAs接触层 C或Mg是p型GaAs接触层中的掺杂剂杂质，p型带不连续性还原层和p型AlGaInP包层。

公开(公告)号：US20050121682A1

公开(公告)日：2005-06-09

申请号：US10961233

申请日：2004-10-12

Applicant: Kimio Shigihara

Inventor： Kimio Shigihara

IPC: H01S5/343 ,  B82Y20/00 ,  H01L21/00 ,  H01S5/024 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01L33/00

CPC classification number: H01S5/02461 ,  H01S5/0224 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2036 ,  H01S5/2063 ,  H01S5/2231 ,  H01S5/3213 ,  H01S2301/18

Abstract: The present invention provides a semiconductor laser device including a heat sink having one main surface, an n-AlGaAs cladding layer disposed on the main surface of the heat sink, an AlGaAs active layer disposed on the n-AlGaAs cladding layer and a p-AlGaAs cladding layer disposed on the AlGaAs active layer. An effective refractive index and a thermal resistance between a main surface on the heat sink side, of the AlGaAs active layer and a main surface on the heat sink side, of the n-AlGaAs cladding layer are respectively set smaller than those between a main surface on the side opposite to the heat sink, of the AlGaAs active layer and a main surface on the side opposite to the heat sink, of the p-AlGaAs cladding layer.

Abstract translation: 本发明提供一种半导体激光装置，其具备：具有一个主表面的散热器，设置在散热片主表面上的n-AlGaAs覆层，设置在n-AlGaAs覆层上的AlGaAs有源层和p-AlGaAs 包层设置在AlGaAs活性层上。 n AlGaAs覆层的AlGaAs活性层和散热体侧的主表面的散热器侧的主面之间的有效折射率和热电阻分别设定为小于主面 在AlGaAs活性层的相反一侧和与散热器相反的一侧的主表面上的p-AlGaAs覆层。

公开(公告)号：US06618412B2

公开(公告)日：2003-09-09

申请号：US09779841

申请日：2001-02-09

Applicant: Kimio Shigihara

Inventor： Kimio Shigihara

IPC: H01S500

CPC classification number: H01S5/22 ,  H01S5/2004 ,  H01S5/2031 ,  H01S5/3213 ,  H01S5/3215 ,  H01S2301/18

Abstract: A semiconductor laser includes a semiconductor substrate of a first conductivity type and having a front surface; a first semiconductor layer disposed on the front surface of the semiconductor substrate and having a refractive index that increases with distance from the semiconductor substrate; an active layer disposed on the first semiconductor layer; and a second semiconductor layer disposed on the active layer, having a refractive index that decreases with distance from the active layer, and having a ridge. In this laser, the refractive index distribution between the ridge and the substrate is asymmetrical about the active layer so that the center of the light intensity distribution shifts from the active layer toward the substrate, in the direction perpendicular to the front surface of the substrate. Therefore, propagated light is hardly affected by the refractive index distribution in the width direction of the laser, which is caused by the presence of the ridge, whereby occurrence of a higher mode is suppressed.

Abstract translation: 半导体激光器包括具有第一导电类型并具有前表面的半导体衬底; 第一半导体层，其设置在半导体衬底的前表面上，并具有随距离半导体衬底的距离而增加的折射率; 设置在所述第一半导体层上的有源层; 以及设置在所述有源层上的第二半导体层，其折射率随距离所述有源层的距离而减小，并且具有脊。 在该激光器中，脊和衬底之间的折射率分布关于有源层是不对称的，使得光强度分布的中心在垂直于衬底的前表面的方向上从有源层向衬底移动。 因此，传播的光几乎不受由于脊的存在而导致的激光器的宽度方向上的折射率分布的影响，从而抑制了更高模式的发生。

公开(公告)号：US06285694B1

公开(公告)日：2001-09-04

申请号：US09073760

申请日：1998-05-07

Applicant: Kimio Shigihara

Inventor： Kimio Shigihara

IPC: H01S500

CPC classification number: H01S5/22 ,  H01S5/2004 ,  H01S5/2031 ,  H01S5/3213 ,  H01S5/3215 ,  H01S2301/18

Abstract: A semiconductor laser includes a semiconductor substrate of a first conductivity type and having a front surface; a first semiconductor layer disposed on the front surface of the semiconductor substrate and having a refractive index that increases with distance from the semiconductor substrate; an active layer disposed on the first semiconductor layer; and a second semiconductor layer disposed on the active layer, having a refractive index that decreases with distance from the active layer, and having a ridge. In this laser, the refractive index distribution between the ridge and the substrate is asymmetrical about the active layer so that the center of the intensity of light generated in the semiconductor laser distribution shifts from the active layer toward the substrate, in the direction perpendicular to the front surface of the substrate. Therefore, propagated light is hardly affected by the refractive index distribution in the width direction of the laser, caused by the presence of the ridge, so that higher oscillation is suppressed.

Abstract translation: 半导体激光器包括具有第一导电类型并具有前表面的半导体衬底; 第一半导体层，其设置在半导体衬底的前表面上，并具有随距离半导体衬底的距离而增加的折射率; 设置在所述第一半导体层上的有源层; 以及设置在所述有源层上的第二半导体层，其折射率随距离所述有源层的距离而减小，并且具有脊。 在该激光器中，脊和衬底之间的折射率分布关于有源层是不对称的，使得在半导体激光器分布中产生的光的强度的中心从有源层向衬底沿垂直于 基板的前表面。 因此，由于脊的存在，传播的光几乎不受激光器的宽度方向的折射率分布的影响，所以可以抑制更高的振动。

公开(公告)号：US20130016753A1

公开(公告)日：2013-01-17

申请号：US13424475

申请日：2012-03-20

Applicant: Kimio SHIGIHARA

Inventor： Kimio SHIGIHARA

IPC: H01S5/125

CPC classification number: H01S5/2036 ,  H01S5/1225 ,  H01S5/125 ,  H01S2301/166

Abstract: An 830 nm broad area semiconductor laser having a distributed Bragg reflector (DBR) structure. The semiconductor laser supports multiple horizontal transverse modes of oscillation extending within a plane perpendicular to a crystal growth direction of the laser, in a direction perpendicular to the length of the resonator of the laser. The resonator includes a diffraction grating in the vicinity of the emitting facet of the laser. The width of the diffraction grating in a plane perpendicular to the growth direction and perpendicular to the length of the resonator is different at first and second locations along the length of the resonator. The width of the diffraction grating along a direction which is perpendicular to the length of the resonator increases with increasing distance from the front facet of the semiconductor laser.

Abstract translation: 具有分布式布拉格反射器（DBR）结构的830nm宽区域半导体激光器。 半导体激光器在垂直于激光器的谐振器的长度的方向上支持垂直于激光器的晶体生长方向的平面内延伸的多个水平横向振荡模式。 谐振器包括在激光器的发射面附近的衍射光栅。 在垂直于生长方向并且垂直于谐振器长度的平面中的衍射光栅的宽度在沿着谐振器的长度的第一和第二位置处是不同的。 沿垂直于谐振器长度的方向的衍射光栅的宽度随着与半导体激光器的前面的距离的增加而增加。

公开(公告)号：US20110002351A1

公开(公告)日：2011-01-06

申请号：US12616816

申请日：2009-11-12

Applicant: Kimio Shigihara

Inventor： Kimio Shigihara

IPC: H01S5/00

CPC classification number: H01S5/2004 ,  H01S5/2063 ,  H01S5/22 ,  H01S5/3211

Abstract: A semiconductor laser device includes: a p-type cladding layer; a p-type cladding layer guide layer; an active layer; an n-type cladding layer guide layer; and an n-type cladding layer, in which each of the p-type and n-type cladding layer guide layers is undoped or close to undoped, the sum of the thickness of the p-type cladding layer guide layer and the thickness of the n-type cladding layer guide layer is at least 200 nm, and both of (i) the difference between the band gap energy of the p-type cladding layer guide layer and the band gap energy of the active layer, and (ii) the difference between the band gap energy of the n-type cladding layer guide layer and the band gap energy of the active layer do not exceed 0.3 eV.

Abstract translation: 半导体激光器件包括：p型覆层; p型包覆层引导层; 活性层 n型包覆层引导层; 以及n型包覆层，其中p型和n型包覆层导向层中的每一个未掺杂或接近未掺杂，p型包覆层引导层的厚度和 n型包覆层引导层为至少200nm，（i）p型包覆层导向层的带隙能量与有源层的带隙能量之间的差异，以及（ii） n型包层导向层的带隙能量与有源层的带隙能量之间的差不超过0.3eV。