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    Apparatus for producing high-purity silver materials
    1.
    发明授权
    Apparatus for producing high-purity silver materials 有权

    公开(公告)号：US06444164B1

    公开(公告)日：2002-09-03

    申请号：US09805274

    申请日：2001-03-13

    申请人： Kishio Tayama ,  Takashi Ohgami ,  Hiroshi Miura

    发明人： Kishio Tayama ,  Takashi Ohgami ,  Hiroshi Miura

    IPC分类号： C21B722

    摘要： An apparatus for producing a high-purity silver material. The apparatus includes an electric furnace. The electric furnace has an outer cylinder which encloses an inner cylinder. The outer cylinder is capable of being evacuated with a vacuum pump. A recovery mold is disposed within the inner cylinder. An aspiration table is connected to a central portion of the recovery mold. A feed crucible is disposed above the recovery mold and is connected to the aspiration table. A cooling trap is disposed below the recovery mold. A water-cooling flange is disposed below the cooling mold.

    Method and apparatus for enhanced purification of high-purity metals
    2.
    发明授权
    Method and apparatus for enhanced purification of high-purity metals 有权
    用于增强高纯度金属纯化的方法和装置

    公开(公告)号：US06932852B2

    公开(公告)日：2005-08-23

    申请号：US10613545

    申请日：2003-07-02

    申请人： Kishio Tayama ,  Toshiaki Hodozuka

    发明人： Kishio Tayama ,  Toshiaki Hodozuka

    IPC分类号： C22B9/04 ,  C22B17/06 ,  C22B19/16 ,  C22B58/00 ,  C21C7/10

    CPC分类号： C22B19/16 ,  C22B9/04 ,  C22B17/06 ,  C22B58/00 ,  Y10S266/905

    摘要： A 99.99% pure indium feed is charged into a crucible and heated to 1250 ° C. by an upper heater in a vacuum atmosphere at 1×10−4 Torr, whereupon indium evaporates, condenses on the inner surfaces of an inner tube and drips to be recovered into a liquid reservoir in the lower part of a tubular member, whereas impurity elements having a lower vapor pressure than indium stay within the crucible. The recovered indium mass in the liquid reservoir is heated to 1100° C. by a lower heater and the resulting vapors of impurity elements having a higher vapor pressure than indium pass through diffuser plates in an upper part of the tubular member to be discharged from the system, whereas the indium vapor recondenses upon contact with the diffuser plates and returns to the liquid reservoir, yielding 99.9999% pure indium, while preventing the loss of indium.

    摘要翻译： 将99.99％的纯铟进料装入坩埚中，并通过上加热器在1×10 -4乇的真空气氛中加热至1250℃，随后铟蒸发，在其内表面上冷凝 内管和滴液回收到管状部件的下部的液体储存器中，而具有比铟低的蒸气压的杂质元素保持在坩埚内。 通过下部加热器将液体储存器中回收的铟质量加热至1100℃，并且所得到的蒸气压高于铟的杂质元素的蒸气通过管状部件上部的扩散板，从而从 系统，而铟蒸汽在与扩散板接触并重新回到液体储存器时重新产生，产生99.9999％的纯铟，同时防止铟的损失。

    Process for producing high-purity metals
    3.
    发明授权
    Process for producing high-purity metals 有权
    生产高纯度金属的方法

    公开(公告)号：US06814779B2

    公开(公告)日：2004-11-09

    申请号：US10112363

    申请日：2002-03-29

    申请人： Kishio Tayama ,  Shunichi Kimura

    发明人： Kishio Tayama ,  Shunichi Kimura

    IPC分类号： C22B902

    CPC分类号： C22B19/16 ,  C22B9/02 ,  C22B9/04 ,  C22B26/22 ,  C22C18/00 ,  C22C23/00 ,  Y02P10/234

    摘要： A process for metal purification comprising a first step for heating a feed metal in a feed crucible to generate a vapor of the metal, a second step for directing the vapor into a condensation passageway for vapors, where part of the vapor is condensed to generate a molten condensate, a third step for directing the vapor through the condensation passageway for vapors into a solidification crucible so that the vapor is cooled to solidify said metal in a high-purity form, and a fourth step for returning the molten condensate into the feed crucible.

    摘要翻译： 一种用于金属净化的方法，包括用于加热进料坩埚中的进料金属以产生金属蒸气的第一步骤，用于将蒸气引导到用于蒸气的冷凝通道的第二步骤，其中蒸汽的一部分被冷凝以产生 熔融的冷凝物，第三步骤，用于将蒸气引导通过冷凝通道，用于蒸汽进入固化坩埚，使得蒸气被冷却以使高纯度形式的所述金属固化;以及第四步骤，用于将熔融冷凝物返回进料坩埚 。

    High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same
    4.
    发明授权
    High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same 有权
    用于制备化合物半导体的高纯度镓及其纯化方法和装置

    公开(公告)号：US06533838B1

    公开(公告)日：2003-03-18

    申请号：US09581840

    申请日：2000-06-19

    申请人： Takeharu Yamamura ,  Hidekazu Kato ,  Takashi Ohgami ,  Kishio Tayama ,  Kanichi Okuda

    发明人： Takeharu Yamamura ,  Hidekazu Kato ,  Takashi Ohgami ,  Kishio Tayama ,  Kanichi Okuda

    IPC分类号： C22B5800

    CPC分类号： C22B58/00 ,  C22B9/02 ,  C22B9/14 ,  Y02P10/234

    摘要： In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.

    摘要翻译： 在从含有杂质的原料镓材料中分离杂质的方法中，提炼镓的方法包括在搅拌的同时逐渐固化容器内液态的原料镓材料，使得管状凝固界面的直径从 容器的内壁平面朝向容器的中心，以减小管状凝固边界的直径，并且在容器内部的整个原料固化之前将残留在容器的中心部分的液相与固化相分离 。 根据需要，通过使用分离液相的凝固相作为原料镓材料来重复上述过程。 可以通过分析从凝固层分离的杂质浓缩的Ga的杂质浓度来获得有利地用于制备化合物半导体的金属镓。

    Apparatus for enhanced purification of high-purity metals
    7.
    发明授权
    Apparatus for enhanced purification of high-purity metals 有权
    用于增强高纯度金属纯化的装置

    公开(公告)号：US06805833B2

    公开(公告)日：2004-10-19

    申请号：US10336498

    申请日：2003-01-02

    申请人： Kishio Tayama ,  Toshiaki Hodozuka

    发明人： Kishio Tayama ,  Toshiaki Hodozuka

    IPC分类号： C21C710

    CPC分类号： C22B17/06 ,  C22B9/02 ,  C22B9/04 ,  C22B19/16 ,  C22B19/18 ,  C22B58/00 ,  Y02P10/234 ,  Y10S266/905

    摘要： A 99.99% pure indium feed is charged into crucible 8 and heated to 1250° C. by upper heater 6 in a vacuum atmosphere at 1×10−4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100° C. by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.

    摘要翻译： 将99.99％的纯铟进料装入坩埚8中，并在1×10 -4乇的真空气氛中由上部加热器6加热至1250℃，由此铟蒸发，在内管3的内表面上冷凝并滴至 被回收到管状构件11的下部的液体储存器9中，而具有比铟低的蒸汽压的杂质元素保持在坩埚8内。液体储存器9中的回收的铟质量被下加热器7加热到1100℃， 具有比铟更高的蒸气压的杂质元素的蒸汽通过管状部件11上部的扩散板12，以便从系统中排出，而铟蒸汽在与扩散板12接触时重新发生并返回到液体储存器9，产生99.9999％ 纯铟，同时防止铟的损失。

    Process for producing high-purity silver materials
    8.
    发明授权
    Process for producing high-purity silver materials 失效
    生产高纯度银料的方法

    公开(公告)号：US06231637B1

    公开(公告)日：2001-05-15

    申请号：US09256115

    申请日：1999-02-24

    申请人： Kishio Tayama ,  Takashi Ohgami ,  Hiroshi Miura

    发明人： Kishio Tayama ,  Takashi Ohgami ,  Hiroshi Miura

    IPC分类号： B22F916

    CPC分类号： C22B9/02 ,  B22F2998/10 ,  C22B9/04 ,  C22B11/00 ,  Y02P10/234 ,  B22F9/12 ,  B22F5/12

    摘要： A process for producing a high-purity silver material comprising placing a silver feed in a crucible disposed in a furnace comprising an inner cylinder which encloses the crucible and an outer cylinder which encloses the inner cylinder; heating the silver feed at a temperature not lower than 1065° C. and at a pressure not higher than 0.1 Pa such that the silver evaporates and condenses on the ceiling of the inner cylinder to yield silver particles; and collecting silver particles in a recovery mold disposed beneath the crucible and within the inner cylinder, such that gold, copper and other impurities having a lower vapor pressure than silver remain within the crucible, whereas sulfur, sodium and the other impurities having a higher vapor pressure than silver are withdrawn by a vacuum pump and are then introduced into a cooling trap disposed beneath the recovery mold, such that the higher vapor pressure impurities are solidified in the cooling trap.

    摘要翻译： 一种生产高纯银材料的方法，包括将银料放入设置在炉内的坩埚中，所述坩埚包括封闭坩埚的内筒和封闭内筒的外筒; 在不低于1065℃的温度和不高于0.1Pa的压力下加热银原料，使得银在内筒的顶板上蒸发并冷凝以产生银颗粒; 并且在设置在坩埚下方和内筒内的回收模具中收集银颗粒，使得具有比银低的蒸气压的金，铜和其它杂质保留在坩埚内，而硫，钠和其它具有较高蒸气的杂质 然后通过真空泵抽出比银更高的压力，然后将其引入设置在回收模具下方的冷却阱中，使得较高的蒸气压杂质在冷却阱中固化。

    Electrolytic refining method for gallium and apparatus for use in the method
    9.
    发明授权
    Electrolytic refining method for gallium and apparatus for use in the method 失效
    用于镓的电解精炼方法和用于该方法的装置

    公开(公告)号：US06221232B1

    公开(公告)日：2001-04-24

    申请号：US09428476

    申请日：1999-10-28

    申请人： Kenichi Tayama ,  Nagayasu Yanata ,  Kishio Tayama

    发明人： Kenichi Tayama ,  Nagayasu Yanata ,  Kishio Tayama

    IPC分类号： C25C334

    CPC分类号： C25C3/34

    摘要： An electrolytic refining method for gallium by depositing refined gallium on a cathode in an electrolytic solution using a melted raw gallium material as an anode in an electrolytic cell is disclosed, comprising applying a centrifugal force to the melted raw gallium material and discharging out a scum gathered in the central portion of the cell.

    摘要翻译： 公开了一种通过在电解池中使用熔融的原料镓材料作为阳极在电解液中的阴极上沉积精炼镓的电解精炼方法，包括向熔融的原料镓材料施加离心力并排出聚集的浮渣 在细胞的中心部分。