公开(公告)号：US09129853B2

公开(公告)日：2015-09-08

申请号：US13491737

申请日：2012-06-08

申请人： Kouichi Nagai

发明人： Kouichi Nagai

IPC分类号： H01L21/4763 ,  H01L23/48 ,  H01L27/115 ,  H01L23/532 ,  H01L27/06 ,  H01L49/02 ,  H01L23/00

CPC分类号： H01L27/11509 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/05 ,  H01L27/0629 ,  H01L27/11502 ,  H01L28/55 ,  H01L2924/07802 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device including a semiconductor substrate having transistors formed thereon, a first interlayer insulating film formed above the semiconductor substrate and the transistors, a ferroelectric capacitor formed above the first interlayer insulating film, a second interlayer insulating film formed above the first interlayer insulating film and the ferroelectric capacitor, a first metal wiring formed on the second interlayer insulating film, and a protection film formed on an upper surface of the wiring but not on a side surface of the wiring.

摘要翻译： 一种制造半导体器件的方法，该半导体器件包括其上形成有晶体管的半导体衬底，形成在半导体衬底上的第一层间绝缘膜和晶体管，形成在第一层间绝缘膜上方的铁电电容器，形成在第一层间绝缘膜上的第二层间绝缘膜 层间绝缘膜和铁电电容器，形成在第二层间绝缘膜上的第一金属布线以及形成在布线的上表面而不是在布线的侧表面上的保护膜。

公开(公告)号：US08921125B2

公开(公告)日：2014-12-30

申请号：US13442217

申请日：2012-04-09

申请人： Kouichi Nagai

发明人： Kouichi Nagai

IPC分类号： H01L21/00 ,  H01L27/105 ,  H01L21/768 ,  H01L27/115 ,  H01L49/02 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/564 ,  H01L21/76826 ,  H01L21/76832 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/13022 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/19041 ,  H01L2924/19043

摘要： A ferroelectric capacitor comprising a transistor layer superimposed on a semiconductor substrate, a ferroelectric capacitor layer provided superior to the transistor layer, a wiring layer provided superior to the ferroelectric capacitor layer, and a passivation film. Further, at least one layer of barrier film capable of inhibiting penetration of moisture and hydrogen into the underlayer is provided between the ferroelectric capacitor layer and the passivation film, and the passivation film is characterized by containing a novolac resin.

摘要翻译： 包括叠加在半导体衬底上的晶体管层，设置在晶体管层之上的铁电电容器层，设置在铁电电容器层上方的布线层和钝化膜的铁电电容器。 此外，在铁电电容器层和钝化膜之间设置至少一层能够抑制水分和氢气渗透到底层中的阻挡膜，并且钝化膜的特征在于含有酚醛清漆树脂。

公开(公告)号：US08552484B2

公开(公告)日：2013-10-08

申请号：US11647198

申请日：2006-12-29

申请人： Kouichi Nagai

发明人： Kouichi Nagai

IPC分类号： H01G7/06 ,  H01L27/108 ,  H01L29/76 ,  H01L29/92

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

摘要： The semiconductor device according to the present invention comprises: a ferroelectric capacitor 42 formed above a semiconductor substrate 10 and including a lower electrode 36, a ferroelectric film 38 formed on the lower electrode 36 and an upper electrode 40 formed on the ferroelectric film 38; a silicon oxide film 60 formed above the semiconductor substrate 10 and the ferroelectric capacitor 42 and having the surface planarized; a flat barrier film 62 formed on the silicon oxide film 60 with a silicon oxide film 61 formed therebetween, for preventing the diffusion of hydrogen or water; a silicon oxide film 64 formed above the barrier film 62 and having the surface planarized; and a flat barrier film 78 formed on the silicon oxide film 74 with a silicon oxide film 76 formed therebetween, for preventing the diffusion of hydrogen or water.

摘要翻译： 根据本发明的半导体器件包括：形成在半导体衬底10上方并包括下电极36的铁电电容器42，形成在下电极36上的强电介质膜38和形成在强电介质膜38上的上电极40; 形成在半导体衬底10和铁电电容器42上方并具有表面平坦化的氧化硅膜60; 形成在氧化硅膜60上的形成有氧化硅膜61的平坦阻挡膜62，用于防止氢或水的扩散; 形成在阻挡膜62上方并具有平坦化表面的氧化硅膜64; 以及形成在氧化硅膜74上的形成有氧化硅膜76的平坦阻挡膜78，用于防止氢或水的扩散。

公开(公告)号：US08466021B2

公开(公告)日：2013-06-18

申请号：US13557552

申请日：2012-07-25

申请人： Yukimasa Miyazaki ,  Kouichi Nagai ,  Hideaki Kikuchi

发明人： Yukimasa Miyazaki ,  Kouichi Nagai ,  Hideaki Kikuchi

IPC分类号： H01L21/8242

CPC分类号： H01L27/11507 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76829 ,  H01L21/76832 ,  H01L27/11509

摘要： Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.

摘要翻译： 即使当在设置有接触孔的层之间存在氧化铝膜时，也可以获得稳定的接触孔形成。 该方法包括在半导体衬底上形成第一元件层的步骤; 在所述第一元件层上形成第一层间绝缘膜; 在所述第一层间绝缘膜上形成第二元件层; 在所述第二元件层上形成第二层间绝缘膜; 在所述第二层间绝缘膜上形成孔抗蚀剂图案; 通过蚀刻第二层间绝缘膜进行用于形成空穴的第一蚀刻; 以及通过蚀刻所述第一层间绝缘膜进行第二蚀刻以将孔延伸到所述第一元件层。

公开(公告)号：US20120288965A1

公开(公告)日：2012-11-15

申请号：US13557552

申请日：2012-07-25

申请人： Yukimasa Miyazaki ,  Kouichi Nagai ,  Hideaki Kikuchi

发明人： Yukimasa Miyazaki ,  Kouichi Nagai ,  Hideaki Kikuchi

IPC分类号： H01L21/02

CPC分类号： H01L27/11507 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76829 ,  H01L21/76832 ,  H01L27/11509

摘要： Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.

摘要翻译： 即使当在设置有接触孔的层之间存在氧化铝膜时，也可以获得稳定的接触孔形成。 该方法包括在半导体衬底上形成第一元件层的步骤; 在所述第一元件层上形成第一层间绝缘膜; 在所述第一层间绝缘膜上形成第二元件层; 在所述第二元件层上形成第二层间绝缘膜; 在所述第二层间绝缘膜上形成孔抗蚀剂图案; 通过蚀刻第二层间绝缘膜进行用于形成空穴的第一蚀刻; 以及通过蚀刻所述第一层间绝缘膜进行第二蚀刻以将孔延伸到所述第一元件层。

公开(公告)号：US08294230B2

公开(公告)日：2012-10-23

申请号：US12548027

申请日：2009-08-26

申请人： Takahiro Yamagata ,  Kouichi Nagai

发明人： Takahiro Yamagata ,  Kouichi Nagai

IPC分类号： H01L31/0216

CPC分类号： G06K9/0002

摘要： A surface profile sensor includes an interlayer insulating film provided with a planarized upper surface formed above a semiconductor substrate, a detection electrode film formed on the interlayer insulating film, an upper insulating film formed on the detection electrode film and the interlayer insulating film and including the surface on which a silicon nitride film is exposed, and a protection insulating film deposited on the upper insulating film and made of a tetrahedral amorphous carbon (ta-C) film including a window formed on the detection electrode film.

摘要翻译： 表面轮廓传感器包括设置有形成在半导体衬底上的平坦化上表面的层间绝缘膜，形成在层间绝缘膜上的检测电极膜，形成在检测电极膜和层间绝缘膜上的上绝缘膜， 在其上露出氮化硅膜的表面和沉积在上绝缘膜上并由包含形成在检测电极膜上的窗口的四面体非晶碳（ta-C））制成的保护绝缘膜。

公开(公告)号：US08237264B2

公开(公告)日：2012-08-07

申请号：US13009904

申请日：2011-01-20

申请人： Kouichi Nagai

发明人： Kouichi Nagai

IPC分类号： H01L23/34

CPC分类号： H01L21/2686 ,  H01L21/67109 ,  H01L21/67115 ,  H01L27/11507 ,  H01L28/55

摘要： A method of manufacturing a semiconductor device has forming a ferroelectric film over a substrate, placing the substrate having the ferroelectric film in a chamber substantially held in vacuum, introducing oxygen and an inert gas into the chamber, annealing the ferroelectric film in the chamber, and containing oxygen and the inert gas while the chamber is maintained sealed.

摘要翻译： 半导体器件的制造方法在基板上形成铁电体膜，将具有铁电体膜的基板放置在基本上保持真空的室内，将氧和惰性气体引入室内，使室内的铁电体膜退火， 在室被保持密封的同时含有氧气和惰性气体。

公开(公告)号：US07982254B2

公开(公告)日：2011-07-19

申请号：US11969019

申请日：2008-01-03

申请人： Kouichi Nagai ,  Katsuhiro Sato ,  Kaoru Sugawara ,  Makoto Takahashi ,  Masahito Kudou ,  Kazuhiro Asai ,  Yukimasa Miyazaki ,  Kaoru Saigoh

发明人： Kouichi Nagai ,  Katsuhiro Sato ,  Kaoru Sugawara ,  Makoto Takahashi ,  Masahito Kudou ,  Kazuhiro Asai ,  Yukimasa Miyazaki ,  Kaoru Saigoh

IPC分类号： H01L29/76

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65 ,  H01L2924/0002 ,  H01L2924/00

摘要： A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrOx: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure (30) may be realized only by a simple configuration.

摘要翻译： 形成具有水/氢阻断功能的保护膜（56），以便在与焊盘电极电隔离的同时覆盖焊盘电极（54a）的外围。 用于构成保护膜的实施方案中选择的材料是具有显着优于绝缘材料（例如钯（Pd）或含钯材料）和铱（Ir）的防氢/阻氢功能的高度防潮材料 ）或氧化铱（IrOx：通常为x = 2）或含铱或氧化铱的材料。 可以通过简单的结构实现能够可靠地防止水/氢进入内部并且保持铁电电容器结构（30）的高性能的FeRAM。

公开(公告)号：US20110108542A1

公开(公告)日：2011-05-12

申请号：US13009904

申请日：2011-01-20

申请人： Kouichi NAGAI

发明人： Kouichi NAGAI

IPC分类号： H05B1/00

CPC分类号： H01L21/2686 ,  H01L21/67109 ,  H01L21/67115 ,  H01L27/11507 ,  H01L28/55

摘要： A method of manufacturing a semiconductor device has forming a ferroelectric film over a substrate, placing the substrate having the ferroelectric film in a chamber substantially held in vacuum, introducing oxygen and an inert gas into the chamber, annealing the ferroelectric film in the chamber, and containing oxygen and the inert gas while the chamber is maintained sealed.

摘要翻译： 半导体器件的制造方法在基板上形成铁电体膜，将具有铁电体膜的基板放置在基本上保持真空的室内，将氧和惰性气体引入室内，使室内的铁电体膜退火， 在室被保持密封的同时含有氧气和惰性气体。

公开(公告)号：US07906349B2

公开(公告)日：2011-03-15

申请号：US12263770

申请日：2008-11-03

申请人： Kouichi Nagai

发明人： Kouichi Nagai

IPC分类号： H01L21/00

CPC分类号： H01L27/11507 ,  G11C11/22 ,  H01G4/33 ,  H01L22/14 ,  H01L22/20 ,  H01L27/11509 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes the step of conducting an acceptance/rejection judgment about the semiconductor device. The acceptance/rejection judgment is conducted by using a hysteresis loop that indicates the relationship between the applied voltage and the polarization quantity of the ferroelectric capacitor.

摘要翻译： 制造半导体器件的方法包括对半导体器件进行接受/拒绝判断的步骤。 通过使用指示施加电压与铁电电容器的极化量之间的关系的磁滞回线进行接受/拒绝判断。