公开(公告)号：US06733650B2

公开(公告)日：2004-05-11

申请号：US09897012

申请日：2001-07-03

申请人： Yuichi Sonoda ,  Kozo Arao ,  Noboru Toyama ,  Yusuke Miyamoto

发明人： Yuichi Sonoda ,  Kozo Arao ,  Noboru Toyama ,  Yusuke Miyamoto

IPC分类号： C25D706

CPC分类号： C25D9/08 ,  C25D7/0614 ,  C25D21/18

摘要： Disclosed are a process for producing a zinc oxide film comprising the steps of transporting a conductive long substrate via above at least one electrode comprised of zinc in an electrodeposition bath held in an electrodeposition tank and applying an electric field between the electrode and the conductive long substrate, thereby forming a zinc oxide film on the conductive long substrate, the process comprising a first step of forming the zinc oxide film on a part of the conductive long substrate; a second step of stopping the application of the electric field and the transportation; and a third step of bringing at least a region of a part of the conductive long substrate being in contact with the electrodeposition bath in the second step into non-contact with the electrodeposition bath, and an apparatus suitably used for the process. The process and apparatus enables high-quality zinc oxide films to be produced.

摘要翻译： 公开了一种生产氧化锌膜的方法，包括以下步骤：将导电长基材经由上述至少一个由锌组成的电极输送到保持在电沉积槽中的电沉积浴中并在电极和导电长基板之间施加电场 从而在导电性长基板上形成氧化锌膜，该方法包括在导电性长基板的一部分上形成氧化锌膜的第一工序; 停止电场和运输的应用的第二步; 以及第三步骤，使得在第二步骤中的导电长基板的与电沉积浴接触的部分的至少一部分区域与电沉积浴非接触，以及适合用于该方法的设备。 该方法和装置能够生产出高质量的氧化锌膜。

公开(公告)号：US06592739B1

公开(公告)日：2003-07-15

申请号：US09722652

申请日：2000-11-28

申请人： Yuichi Sonoda ,  Kozo Arao ,  Noboru Toyama ,  Yusuke Miyamoto

发明人： Yuichi Sonoda ,  Kozo Arao ,  Noboru Toyama ,  Yusuke Miyamoto

IPC分类号： C25D706

CPC分类号： H01L31/076 ,  C23C28/322 ,  C23C28/345 ,  C25D5/028 ,  C25D5/48 ,  C25D7/0614 ,  C25D9/04 ,  H01L31/1836 ,  Y02E10/548

摘要： Disclosed are an electrodeposition process comprising the steps of transporting a substrate in an electrodeposition bath, and forming a film on the substrate, which process further comprises the step of removing particles from the surface of the substrate; and an electrodeposition apparatus comprising an electrodeposition tank for holding therein an electrodeposition bath, a mechanism for transporting a continuous-length-substrate while holding the substrate thereon, and an opposing electrode, which apparatus further comprises a mechanism for removing particles from the surface of the continuous-length substrate. These can provide a process and an apparatus by and in which dust in the bath or any particles due to film-peeling from electrodes can be prevented from causing difficulties such as impact marks in a film-deposited substrate during its transport, to form a good-quality electrodeposited film.

摘要翻译： 公开了电沉积方法，其包括以下步骤：在电沉积浴中输送基底，并在基底上形成膜，该方法还包括从基底表面去除颗粒的步骤; 以及电沉积装置，其包括用于保持电沉积浴的电沉积槽，用于在保持基板的同时保持基板的同时输送连续长度基板的机构，以及相对电极，该装置还包括用于从其表面去除颗粒的机构 连续长度衬底。 这些可以提供一种工艺和装置，其中可以防止浴中的灰尘或由于电极的膜剥离引起的任何颗粒在运输过程中在膜沉积基材中引起诸如冲击痕的困难，形成良好的 质量电沉积膜。

公开(公告)号：US06464762B1

公开(公告)日：2002-10-15

申请号：US09819039

申请日：2001-03-21

申请人： Kozo Arao

发明人： Kozo Arao

IPC分类号： C25D900

CPC分类号： H01L31/022466 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

摘要： A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the counter electrode thereby causing indium oxide film formation on the substrate is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film forming method are further provided.

摘要翻译： 一种通过将基板和对电极浸入至少含有硝酸盐和铟离子的水溶液中并在基板和对电极之间流动电流从而形成氧化铟膜的方法，用于在导电基板上形成氧化铟膜 在基板上提供。 还提供了一种用于半导体元件的基板和使用该膜形成方法制造的光电元件。还公开了通过无电沉积方法形成氧化铟膜的水溶液，其至少含有硝酸盐和铟离子和酒石酸盐。 还提供了一种通过使用该水溶液的无电沉积工艺在衬底上形成氧化铟膜的薄膜形成方法，以及使用该成膜方法制造的半导体元件用基板和光电元件。

公开(公告)号：US06238808B1

公开(公告)日：2001-05-29

申请号：US09233328

申请日：1999-01-20

申请人： Kozo Arao ,  Hideo Tamura ,  Noboru Toyama ,  Yuichi Sonoda ,  Yusuke Miyamoto

发明人： Kozo Arao ,  Hideo Tamura ,  Noboru Toyama ,  Yuichi Sonoda ,  Yusuke Miyamoto

IPC分类号： B32B1500

CPC分类号： H01L31/1884 ,  C25D9/08 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/206 ,  Y02E10/52 ,  Y02P70/521 ,  Y10S428/935 ,  Y10T428/12549 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/12639 ,  Y10T428/12743 ,  Y10T428/1275 ,  Y10T428/12757 ,  Y10T428/12764 ,  Y10T428/12979 ,  Y10T428/12986 ,  Y10T428/265

摘要： Provided are a substrate with a zinc oxide layer, in which at least a zinc oxide layer is provided on a support substrate, wherein the zinc oxide layer comprises a zinc oxide layer having the c axis perpendicular to the support substrate and a zinc oxide layer having the c axis slantindicular to the support substrate in the order from the side of the support substrate; and a photovoltaic device in which a semiconductor layer is formed on the substrate with the zinc oxide layer. Thus provided is the inexpensive photovoltaic device with excellent reflective performance and optical confinement effect and with high photoelectric conversion efficiency.

摘要翻译： 本发明提供一种具有氧化锌层的基板，其中至少在支撑基板上设置有氧化锌层，其中氧化锌层包括具有垂直于支撑基板的c轴的氧化锌层和具有与支撑基板垂直的氧化锌层， c轴从支撑基板的一侧依次倾斜到支撑基板; 以及在氧化锌层的基板上形成有半导体层的光电转换装置。 因此提供了具有优异的反射性能和光限制效应以及高光电转换效率的便宜的光电器件。

公开(公告)号：US5028488A

公开(公告)日：1991-07-02

申请号：US226819

申请日：1988-08-01

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka

IPC分类号： C30B33/00 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G02F1/03 ,  G02F1/05 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/1832 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/0392 ,  H01L31/068 ,  Y02E10/547 ,  Y10T428/31678

摘要： A functional ZnSe.sub.1-x Te.sub.x :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe.sub.1-x Te.sub.x :H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way.These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate.These films are suited for the preparation of a high functional device such as a photovoltaic element.

摘要翻译： 功能性ZnSe1-xTex：H膜具有高的掺杂效率，并且在光照射下的特性没有显着变化。 所述膜的特征在于Se / Te的定量比在3:7至1:9的范围内以原子数比计，氢原子的含量为1至4原子％，晶粒的比例 每单位体积的畴数在65至85体积％范围内。 还提供了以上述方式表征的改进的高导电性的p型和n型ZnSe1-xTex：H：M膜（M代表掺杂剂）。 这些沉积膜即使在金属，玻璃或合成树脂制成的非单晶衬底上也可以高沉积速率。 这些膜适用于制备诸如光电元件的高功能器件。

公开(公告)号：US5008726A

公开(公告)日：1991-04-16

申请号：US273070

申请日：1988-11-18

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai

IPC分类号： H01L31/0296 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/075 ,  H01L31/1832 ,  Y02E10/548

摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

公开(公告)号：US4959106A

公开(公告)日：1990-09-25

申请号：US399396

申请日：1989-08-28

申请人： Katsumi Nakagawa ,  Masahiro Kanai ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Tsutomu Murakami

发明人： Katsumi Nakagawa ,  Masahiro Kanai ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Tsutomu Murakami

IPC分类号： H01L21/363 ,  H01L21/365 ,  H01L31/0296 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/073 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/068 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02E10/547

摘要： A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.

摘要翻译： 1.一种通过p型半导体层和n型半导体层的连接产生光电动势的光电元件，其特征在于，所述半导体层中的至少一个由锌原子，硒原子， 可选的碲原子和至少氢原子，所述沉积膜含有含有1至4原子％氢原子的p型或n型掺杂剂，其含有比例为1:9至3的硒原子和碲原子 ：7（以原子数计），并且还含有65〜85体积％的每单位体积的晶粒。

公开(公告)号：US4673630A

公开(公告)日：1987-06-16

申请号：US741878

申请日：1985-06-06

申请人： Kazuhara Katagiri ,  Yoshihiro Oguchi ,  Takeshi Ohtake ,  Kozo Arao ,  Makoto Kitahara ,  Yoshio Takasu

发明人： Kazuhara Katagiri ,  Yoshihiro Oguchi ,  Takeshi Ohtake ,  Kozo Arao ,  Makoto Kitahara ,  Yoshio Takasu

IPC分类号： C09B23/00 ,  G03G5/04 ,  G03G5/06 ,  H01L31/08 ,  H01L51/42

CPC分类号： G03G5/0668 ,  G03G5/0607 ,  G03G5/0609 ,  G03G5/0611 ,  G03G5/0661 ,  G03G5/067 ,  G03G5/0672 ,  G03G5/0674

摘要： Photoconductive films contain specified azulenium salt compounds. Electrophotographic photosensitive members are provided with a photoconductive film containing at least one of the specified azulenium salt compounds.

摘要翻译： 光导膜含有特定的薁盐化合物。 电子照相感光构件设置有含有至少一种特定的薁盐化合物的光导膜。

公开(公告)号：US4629670A

公开(公告)日：1986-12-16

申请号：US742570

申请日：1985-06-07

申请人： Kazuharu Katagiri ,  Yoshihiro Oguchi ,  Takeshi Ohtake ,  Kozo Arao ,  Yoshio Takasu

发明人： Kazuharu Katagiri ,  Yoshihiro Oguchi ,  Takeshi Ohtake ,  Kozo Arao ,  Yoshio Takasu

IPC分类号： C07D231/06 ,  C07D309/34 ,  C07D311/78 ,  C07D311/82 ,  C07D471/04 ,  C09B23/01 ,  G03G5/06 ,  G03G5/00 ,  G03G5/09 ,  G03G5/14

CPC分类号： C07D231/06 ,  C07C251/72 ,  C07D309/34 ,  C07D311/78 ,  C07D311/82 ,  C07D471/04 ,  C09B23/0091 ,  G03G5/0607 ,  Y10S430/146

摘要： Photoconductive films contain specified azulenium salt compounds. Electrophotographic photosensitive members are provided with a photoconductive film containing at least one of the specified azulenium salt compounds.

摘要翻译： 光导膜含有特定的薁盐化合物。 电子照相感光构件设置有含有至少一种特定的薁盐化合物的光导膜。

公开(公告)号：US06475367B1

公开(公告)日：2002-11-05

申请号：US09501522

申请日：2000-02-09

申请人： Noboru Toyama ,  Kozo Arao ,  Yuichi Sonoda ,  Yusuke Miyamoto

发明人： Noboru Toyama ,  Kozo Arao ,  Yuichi Sonoda ,  Yusuke Miyamoto

IPC分类号： C25D706

CPC分类号： C25D9/08 ,  C25D7/0614 ,  C25D7/0657

摘要： There is disclosed an electrodeposition method capable of suppressing the drop in the power supply voltage and minimizing the heat loss by the electrodeposition current, thereby achieving uniform film formation with satisfactory characteristics. A conductive substrate is dipped in an electrodeposition bath held in an electrodeposition tank, and an oxide is electrolytically deposited on the conductive substrate. An electricity feed means as at least one electrode of the electrodeposition tank is composed of a conductive member so provided as to be in contact with a back surface of the conductive substrate, wherein the contact position of the electricity feed means and the conductive substrate is outside the electrodeposition bath, and wherein the resistance, including contact resistance, between the closer to the electricity feed means of a position of entry of the conductive substrate into the electrodeposition bath and a position of discharge of the conductive substrate from the electrodeposition bath, and the contact position of the conductive substrate with the electricity feed means is 20&OHgr; or less.

摘要翻译： 公开了一种能够抑制电源电压降低并且通过电沉积电流最小化热损失的电沉积方法，从而获得具有令人满意的特性的均匀成膜。 将导电性基材浸渍在保持在电沉积槽中的电沉积浴中，氧化物电解沉积在导电性基材上。 一种供电装置，其特征在于，所述电沉积槽的至少一个电极由导电构件构成，所述导电构件设置为与所述导电基板的背面接触，其中所述供电装置和所述导电基板的接触位置在外部 电沉积浴，并且其中在导电基底进入电沉积浴的位置更接近馈电装置之间的电阻（包括接触电阻）和导电基底从电沉积浴放电的位置，以及 导电基板与供电装置的接触位置为20OMEGA以下。