公开(公告)号：US09275904B2

公开(公告)日：2016-03-01

申请号：US12614991

申请日：2009-11-09

Applicant: Sung-Jin Whang ,  Moon-Sig Joo ,  Yong-Seok Eun ,  Kwon Hong ,  Bo-Min Seo ,  Kyoung-Eun Chang ,  Seung-Woo Shin

Inventor： Sung-Jin Whang ,  Moon-Sig Joo ,  Yong-Seok Eun ,  Kwon Hong ,  Bo-Min Seo ,  Kyoung-Eun Chang ,  Seung-Woo Shin

IPC: H01L21/8234 ,  H01L21/28 ,  H01L27/108 ,  H01L27/115 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L21/823443 ,  H01L21/28052 ,  H01L21/28114 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/31051 ,  H01L21/31111 ,  H01L21/32139 ,  H01L27/10873 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42376 ,  H01L29/4933

Abstract: A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.

Abstract translation: 一种制造半导体器件的方法，包括在衬底上形成栅极图案，形成覆盖每个栅极图案的顶部和侧壁的导电层，在导电层上形成用于硅化工艺的金属层，以及硅化导电层和栅极图案 使用金属层。

公开(公告)号：US20130051355A1

公开(公告)日：2013-02-28

申请号：US13696012

申请日：2011-05-03

Applicant: Sung Kwon Hong

Inventor： Sung Kwon Hong

IPC: H04W72/04

CPC classification number: H04J11/0073 ,  H04L5/0007 ,  H04L5/001 ,  H04L5/0053 ,  H04L5/0094

Abstract: A method for transmitting control information in a multi-component carrier system comprises: configuring downlink control information containing a format indicator that indicates the number of Orthogonal Frequency Division Multiplexing (OFDM) symbols for a control domain; configuring the control domain in accordance with the number of OFDM symbols; transmitting a physical downlink control channel (PDCCH) containing the thus-configured downlink control information; and transmitting a physical control format indicator channel, containing the format indicator, to the control domain. According to the exemplary embodiments, multiple errors in detecting a PDCCH and a physical downlink shared channel (PDSCH) caused by an error in detecting a physical control format indicator channel (PCFICH) for a sub-component carrier can be easily resolved.

Abstract translation: 一种用于在多分量载波系统中发送控制信息的方法，包括：配置包含指示用于控制域的正交频分复用（OFDM）符号数目的格式指示符的下行链路控制信息; 根据OFDM符号的数量配置控制域; 发送包含如此配置的下行链路控制信息的物理下行链路控制信道（PDCCH）; 并将包含格式指示符的物理控制格式指示符信道发送到控制域。 根据示例性实施例，可以容易地解决检测用于子分量载波的物理控制格式指示符信道（PCFICH）中的错误导致的PDCCH和物理下行链路共享信道（PDSCH）的多个错误。

公开(公告)号：US20130044713A1

公开(公告)日：2013-02-21

申请号：US13643239

申请日：2011-06-20

Applicant: Sung Jin Suh ,  Sung Kwon Hong

Inventor： Sung Jin Suh ,  Sung Kwon Hong

IPC: H04W72/04

CPC classification number: H04L5/0048 ,  H04L5/0053 ,  H04L5/0094 ,  H04L5/1469

Abstract: A method for transmitting resource allocation information for an aperiodic transmission of a sounding reference signal (SRS) includes: determining, by a base station (BS), resource to be allocated for a transmission of an aperiodic SRS to a user equipment (UE) to which an aperiodic SRS is to be transmitted; transmitting indication information regarding the determined resource by using extra information of a physical control channel; and receiving an aperiodic SRS transmitted by the UE in the determined resource after the transmission of the physical control channel.

Abstract translation: 用于发送用于探测参考信号（SRS）的非周期性传输的资源分配信息的方法包括：由基站（BS）将用于非周期性SRS的传输的资源分配给用户设备（UE）至 这是一个非周期SRS被传输的; 通过使用物理控制信道的附加信息来发送关于所确定的资源的指示信息; 以及在发送所述物理控制信道之后，在所确定的资源中接收由所述UE发送的非周期SRS。

公开(公告)号：US08288263B2

公开(公告)日：2012-10-16

申请号：US12850903

申请日：2010-08-05

Applicant: Gyu-Hyun Kim ,  Kwon Hong ,  Cha-Deok Dong

Inventor： Gyu-Hyun Kim ,  Kwon Hong ,  Cha-Deok Dong

IPC: H01L21/28

CPC classification number: H01L28/60 ,  H01L21/02057 ,  H01L27/10852 ,  H01L27/11519 ,  H01L27/11524

Abstract: A method for fabricating a semiconductor device includes forming a multilayer, forming a plurality of patterns by etching the multilayer and a portion of the substrate, forming a supporter to support the plurality of patterns, and removing residues formed during the etching.

Abstract translation: 一种制造半导体器件的方法包括：通过蚀刻多层和一部分衬底形成多个图案，形成多个图案，形成支撑体以支撑多个图案，以及去除蚀刻期间形成的残留物。

公开(公告)号：USRE43419E1

公开(公告)日：2012-05-29

申请号：US12849632

申请日：2010-08-03

Applicant: Sung Kwon Hong ,  Sung Lark Kwon ,  Young Woo Yun ,  Ki Jun Kim

Inventor： Sung Kwon Hong ,  Sung Lark Kwon ,  Young Woo Yun ,  Ki Jun Kim

IPC: H04L12/28 ,  H04L1/08 ,  H04L1/00 ,  H04L12/56

Abstract: Method for improving a TFCI transportation performance, including the steps of (1) coding TFCI information bits to be transported through each radio frame, (2) repeating a TFCI code word produced by the coding for an arbitrary times, (3) applying puncturing patterns different from each other to the repeated code words produced as many as the repeated times, and puncturing the repeated code words at locations different from each other, and (4) dividing, inserting, and transporting the punctured fixed length repeated code words in each slot of the radio frame, whereby improving TFCI information transportation performance, and embodying the receiver side decoder to be identical to a case when a 32 bit code word are transported perfectly.

Abstract translation: 提高TFCI传输性能的方法，包括以下步骤：（1）对通过每个无线电帧传输的TFCI信息比特进行编码，（2）重复由编码产生的任意时间的TFCI码字，（3）应用穿孔模式 彼此不同，产生与重复次数一样多的重复码字，并且在彼此不同的位置对重复的码字进行穿孔，以及（4）在每个时隙中划分，插入和传送穿孔固定长度的重复码字 从而提高TFCI信息传输性能，并将接收机侧解码器体现为与32位码字被完美传送的情况相同。

公开(公告)号：US08134971B2

公开(公告)日：2012-03-13

申请号：US12074306

申请日：2008-03-03

Applicant: Do-Young Kim ,  Dong-Seek Park ,  Ho-Kyu Choi ,  Sung-Kwon Hong

Inventor： Do-Young Kim ,  Dong-Seek Park ,  Ho-Kyu Choi ,  Sung-Kwon Hong

IPC: H04W4/00

CPC classification number: H04W36/0066

Abstract: A method and system for transmitting/receiving data in a heterogeneous communication system. A terminal accesses a first controller of a first communication system supporting a first communication service to make a communication path to the first communication system. After making the communication path to the terminal, the first controller determines whether it is possible to provide the first communication service to the terminal over the first communication system. If it is not possible, the first controller transmits to an interworking unit a first request indicating that the terminal requires the first communication service over the second communication system. The interworking unit transmits a second request to a second controller of the second communication system in response to the first request, the second request indicating that the second controller provides the first communication service to the terminal. Upon receiving a response to the second request, the interworking unit controls the first controller to provide the first communication service to the terminal over the second communication system according to the response.

Abstract translation: 一种用于在异构通信系统中发送/接收数据的方法和系统。 终端访问支持第一通信服务的第一通信系统的第一控制器，以建立到第一通信系统的通信路径。 在向终端发送通信路径之后，第一控制器确定是否可以通过第一通信系统向终端提供第一通信服务。 如果不可能，则第一控制器向交互单元发送指示终端在第二通信系统上需要第一通信服务的第一请求。 交互单元响应于第一请求向第二通信系统的第二控制器发送第二请求，第二请求指示第二控制器向终端提供第一通信服务。 在接收到对第二请求的响应时，交互单元控制第一控制器，以根据响应通过第二通信系统向终端提供第一通信服务。

公开(公告)号：US20110291177A1

公开(公告)日：2011-12-01

申请号：US12880891

申请日：2010-09-13

Applicant: Ki-Hong Lee ,  Kwon Hong ,  Dae-Gyu Shin

Inventor： Ki-Hong Lee ,  Kwon Hong ,  Dae-Gyu Shin

IPC: H01L29/792 ,  H01L21/336

CPC classification number: H01L27/11582 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/768 ,  H01L21/8221 ,  H01L27/11578 ,  H01L29/66833 ,  H01L29/7926

Abstract: A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom of the pipe channel hole.

Abstract translation: 非易失性存储器件包括具有管道通道孔的管道绝缘层，设置在管道绝缘层上方的管道栅极，一对具有柱状电池沟道的电池串，以及连接柱状电池槽和围绕内侧壁的管道 和管道通孔的底部。

公开(公告)号：US08049268B2

公开(公告)日：2011-11-01

申请号：US12748967

申请日：2010-03-29

Applicant: Kwon Hong ,  Kwan-Yong Lim

Inventor： Kwon Hong ,  Kwan-Yong Lim

IPC: H01L29/788

CPC classification number: H01L21/28273 ,  H01L29/513 ,  H01L29/7881

Abstract: A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.

Abstract translation: 提供了一种非易失性存储器件中的电介质结构及其制造方法。 介电结构包括：第一氧化物层; 形成在所述第一氧化物层上的第一高k电介质膜，其中所述第一高k电介质膜包括介电常数约为9或更高的材料和至少两种所述材料的化合物中的一种; 以及形成在第一高k电介质膜上的第二氧化物层。

公开(公告)号：US08048743B2

公开(公告)日：2011-11-01

申请号：US12493439

申请日：2009-06-29

Applicant: Ki-Hong Lee ,  Moon-Sig Joo ,  Kwon Hong ,  Sun-Hwan Hwang

Inventor： Ki-Hong Lee ,  Moon-Sig Joo ,  Kwon Hong ,  Sun-Hwan Hwang

IPC: H01L21/336

CPC classification number: H01L29/66833 ,  H01L21/2236 ,  H01L27/11578 ,  H01L27/11582

Abstract: A method for fabricating a vertical channel type nonvolatile memory device includes: stacking a plurality of interlayer insulating layers and a plurality of gate electrode conductive layers alternately over a substrate; etching the interlayer insulating layers and the gate electrode conductive layers to form a channel trench exposing the substrate; forming an undoped first channel layer over the resulting structure including the channel trench; doping the first channel layer with impurities through a plasma doping process; and filling the channel trench with a second channel layer.

Abstract translation: 一种用于制造垂直通道型非易失性存储器件的方法，包括：在衬底上交替堆叠多个层间绝缘层和多个栅电极导电层; 蚀刻层间绝缘层和栅电极导电层以形成暴露衬底的沟槽; 在包括沟道沟槽的所得结构上形成未掺杂的第一沟道层; 通过等离子体掺杂工艺对具有杂质的第一沟道层进行掺杂; 以及用第二通道层填充沟槽。

公开(公告)号：US20110027465A1

公开(公告)日：2011-02-03

申请号：US12895678

申请日：2010-09-30

Applicant: Deok-Sin KIL ,  Kwon Hong ,  Seung-Jin Yeom

Inventor： Deok-Sin KIL ,  Kwon Hong ,  Seung-Jin Yeom

IPC: H01G9/00 ,  C23C16/40 ,  H01G9/07

CPC classification number: C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31641 ,  H01L27/10814 ,  H01L28/40

Abstract: Provided is a method for forming a dielectric film in a semiconductor device, wherein the method can improve a dielectric characteristic and a leakage current characteristic. According to specific embodiments of the present invention, the method for forming a dielectric film includes: forming a zirconium dioxide (ZrO2) layer over a wafer in a predetermined thickness that does not allow continuous formation of the ZrO2 layer; and forming an aluminum oxide (Al2O3) layer over portions of the wafer where the ZrO2 layer is not formed, in a predetermined thickness that does not allow continuous formation of the Al2O3 layer.

Abstract translation: 提供一种在半导体器件中形成电介质膜的方法，其中该方法可以改善介电特性和漏电流特性。 根据本发明的具体实施方案，形成电介质膜的方法包括：在不允许连续形成ZrO 2层的预定厚度的晶片上形成二氧化锆（ZrO 2）层; 并且在没有形成ZrO 2层的晶片的部分上形成氧化铝（Al 2 O 3）层，其厚度不能连续地形成Al 2 O 3层。