公开(公告)号：US08810124B2

公开(公告)日：2014-08-19

申请号：US12581507

申请日：2009-10-19

申请人： Chung Hoon Lee ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

发明人： Chung Hoon Lee ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC分类号： H05B33/14 ,  H05B33/08 ,  F21K99/00 ,  H01L25/075 ,  H01L33/50 ,  F21Y113/00

CPC分类号： H01L33/504 ,  F21K9/00 ,  F21K9/62 ,  F21K9/64 ,  F21V23/06 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48137 ,  H01L2224/49107 ,  H05B33/0821

摘要： Disclosed are an AC light emitting device with a long-persistent phosphor and an AC light emitting device module having the same. According to an exemplary embodiment of the present invention, the light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. Further, a first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip; and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence resulted from the second long-persistent phosphor is allowed to be different from that resulted from the first long-persistent phosphor, whereby a flicker effect of the AC light emitting device can be more alleviated.

摘要翻译： 公开了具有长持久性荧光体和具有该荧光体的AC发光器件模块的交流发光器件。 根据本发明的示例性实施例，发光器件包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。 此外，第一长持续荧光体位于第一发光二极管芯片上，以对从第一发光二极管芯片发射的光的一部分进行波长转换; 并且第二长持续荧光体位于第二发光二极管芯片上，以对从第二发光二极管芯片发射的光的一部分进行波长转换。 使得由第二长持续荧光体产生的余辉发光与第一长持续荧光体不同，从而可以进一步减轻AC发光器件的闪烁效应。

公开(公告)号：US08772805B2

公开(公告)日：2014-07-08

申请号：US13018557

申请日：2011-02-01

申请人： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

发明人： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

公开(公告)号：US20140133145A1

公开(公告)日：2014-05-15

申请号：US14129795

申请日：2012-06-20

申请人： Hyuck Jung Choi ,  Kyung Hee Ye

发明人： Hyuck Jung Choi ,  Kyung Hee Ye

IPC分类号： F21V29/00

CPC分类号： F21V29/70 ,  F21K9/232 ,  F21V29/004 ,  F21V29/74 ,  F21Y2101/00 ,  F21Y2115/10 ,  Y02B20/30

摘要： The present invention relates to an LED lamp. In the LED lamp, light may be emitted in lateral and rear directions as well as in a front direction to obtain light distribution characteristics similar to those of an incandescent lamp, and heat generated when the LED emits light may be effectively dissipated.

摘要翻译： 本发明涉及一种LED灯。 在LED灯中，可以在横向和后方以及正面方向上发射光，以获得与白炽灯类似的分布特性，并且可以有效地消散LED发光时产生的热量。

公开(公告)号：US08436369B2

公开(公告)日：2013-05-07

申请号：US13617810

申请日：2012-09-14

申请人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

发明人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

公开(公告)号：US20130026498A1

公开(公告)日：2013-01-31

申请号：US13640943

申请日：2011-04-07

申请人： Chung Hoon Lee ,  Kyung Hee Ye ,  Dae Sung Kal ,  Won Cheol Seo

发明人： Chung Hoon Lee ,  Kyung Hee Ye ,  Dae Sung Kal ,  Won Cheol Seo

IPC分类号： H01L33/48 ,  B32B9/04 ,  B32B7/02 ,  B32B15/04

CPC分类号： H01L33/0079 ,  Y10T428/24942

摘要： A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.

摘要翻译： 公开了一种其上形成有第一导电型半导体层，有源层和第二导电型半导体层的衬底组件，该衬底组件包括第一衬底，第二衬底和介于其间的结合层。 在基板组件中，接合层的热膨胀系数小于或等于第一和第二基板中的至少一个的热膨胀系数。

公开(公告)号：US08294171B2

公开(公告)日：2012-10-23

申请号：US13345348

申请日：2012-01-06

申请人： Won Cheol Seo ,  Kwang Choong Kim ,  Kyung Hee Ye

发明人： Won Cheol Seo ,  Kwang Choong Kim ,  Kyung Hee Ye

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L27/156

摘要： Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.

公开(公告)号：US08211724B2

公开(公告)日：2012-07-03

申请号：US12623990

申请日：2009-11-23

申请人： Kwang Choong Kim ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

发明人： Kwang Choong Kim ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

公开(公告)号：US08188489B2

公开(公告)日：2012-05-29

申请号：US12607506

申请日：2009-10-28

申请人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

发明人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/48 ,  H05B33/0821

摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

公开(公告)号：US20120037881A1

公开(公告)日：2012-02-16

申请号：US12983499

申请日：2011-01-03

申请人： Kwang Joong KIM ,  Chang Suk HAN ,  Kyung Hee YE ,  Seung Kyu CHOI ,  Ki Bum NAM ,  Nam Yoon KIM ,  Kyung Hae KIM ,  Ju Hyung YOON

发明人： Kwang Joong KIM ,  Chang Suk HAN ,  Kyung Hee YE ,  Seung Kyu CHOI ,  Ki Bum NAM ,  Nam Yoon KIM ,  Kyung Hae KIM ,  Ju Hyung YOON

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

摘要翻译： 本发明的示例性实施例公开了一种发光二极管，其包括掺杂有硅的n型接触层，p型接触层，设置在n型接触层和p型接触层之间的有源区，超晶格 所述超晶格层包括多个层，设置在所述超晶格层和所述n型接触层之间的未掺杂的中间层以及设置在所述未掺杂的中间层之间的电子增强层 层和超晶格层。 最靠近有源区的超晶格层的最终层被掺杂硅，并且最终层的硅掺杂浓度高于n型接触层的掺杂浓度。

公开(公告)号：US20100244727A1

公开(公告)日：2010-09-30

申请号：US12704881

申请日：2010-02-12

申请人： Kyung Hee YE ,  Hyun Gu Kang ,  Dae Sung Kal ,  Won Cheol Seo

发明人： Kyung Hee YE ,  Hyun Gu Kang ,  Dae Sung Kal ,  Won Cheol Seo

IPC分类号： H05B37/02

CPC分类号： H05B33/0809

摘要： A light-emitting diode (LED) driver used to power at least one LED with an alternating current (AC) voltage source is provided. The LED driver includes a rectifying unit applying N-fold higher voltage than the voltage from the AC voltage source to the LED. The rectifying unit includes a first charging unit to charge a first voltage, and a second charging unit to charge a second voltage. The first voltage includes the voltage at the AC voltage source during a first half-cycle of one AC voltage cycle, and the second voltage includes the first voltage and the voltage at the AC voltage source during the second half-cycle of the AC voltage cycle. Accordingly, the LED driver may improve light-emitting efficiency and reduce flicker of LEDs.

摘要翻译： 提供了用于为交流（AC）电压源至少一个LED供电的发光二极管（LED）驱动器。 LED驱动器包括整流单元，其施加比来自AC电压源的电压高出N倍的电压。 整流单元包括对第一电压充电的第一充电单元和用于对第二电压充电的第二充电单元。 第一电压包括在一个交流电压周期的第一个半周期期间的交流电压源处的电压，并且第二电压在交流电压周期的第二个半周期期间包括第一电压和交流电压源处的电压 。 因此，LED驱动器可以提高发光效率并减少LED的闪烁。