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公开(公告)号：US08243507B2
公开(公告)日：2012-08-14
申请号：US13107087
申请日：2011-05-13
IPC分类号： G11C11/00
CPC分类号： H01L28/65 , H01L28/20 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683 , Y10S977/754
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; at least one isolation layer over the first dielectric layer; a heater within the isolation layer; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译： 提供可编程的器件及其制造方法。 在一个方面，提供了可编程通路装置。 可编程通孔装置包括第一介电层; 在所述第一介电层上方的至少一个隔离层; 隔离层内的加热器; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。
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公开(公告)号：US08159854B2
公开(公告)日：2012-04-17
申请号：US12495027
申请日：2009-06-30
IPC分类号： G11C5/06
CPC分类号： H03K19/02 , G11C11/412 , G11C13/0002 , H01L49/00 , Y10T29/42
摘要： A piezo-effect transistor (PET) device includes a piezoelectric (PE) material disposed between first and second electrodes; and a piezoresistive (PR) material disposed between the second electrode and a third electrode, wherein the first electrode comprises a gate terminal, the second electrode comprises a common terminal, and the third electrode comprises an output terminal such that an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material.
摘要翻译： 压电效应晶体管（PET）器件包括设置在第一和第二电极之间的压电（PE）材料; 以及设置在第二电极和第三电极之间的压阻（PR）材料，其中第一电极包括栅极端子，第二电极包括公共端子，并且第三电极包括输出端子，使得PR的电阻 材料取决于PE材料上施加的电压，通过PE材料对PR材料的施加压力。
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公开(公告)号：US07977203B2
公开(公告)日：2011-07-12
申请号：US12544964
申请日：2009-08-20
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L28/20 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device includes a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via including at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译： 提供可编程的器件及其制造方法。 在一个方面，提供了可编程通路装置。 可编程通孔装置包括第一介电层; 第一介电层上的加热器; 将所述加热器的至少一部分与所述第一介电层分开的气隙; 覆盖所述加热器的至少一部分的所述第一介电层上的隔离层; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。
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公开(公告)号：US20110102016A1
公开(公告)日：2011-05-05
申请号：US12987089
申请日：2011-01-08
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum
IPC分类号： H03K19/173
CPC分类号： H01L45/148 , H01L45/06 , H01L45/1206 , H01L45/126 , H01L45/144
摘要： Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer.
摘要翻译： 提供了可重构的装置及其制造方法。 在一个方面，提供了可重新配置的设备。 可重构装置包括基板; 基底上的第一介电层; 导电层，凹入到与衬底相对的第一电介质层的一侧的至少一部分中; 在所述第一电介质层的与所述衬底相对的一侧上的至少一个第二电介质层，以覆盖所述导电层; 第二介电层内的加热器; 至少一个可编程通道延伸穿过第二电介质层，延伸穿过并被加热器包围并与导电层接触，该可编程通孔包括至少一个相变材料; 可编程通道上的覆盖层; 第一导电通孔和第二导电通孔，每个延伸通过第二介电层并与加热器接触; 以及延伸穿过第二介电层并与导电层接触的第三导电通孔。
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公开(公告)号：US07880157B2
公开(公告)日：2011-02-01
申请号：US12544089
申请日：2009-08-19
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum
IPC分类号： H01L29/04
CPC分类号： H01L45/148 , H01L45/06 , H01L45/1206 , H01L45/126 , H01L45/144
摘要： Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer.
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6.发明申请公开(公告)号：US20100073997A1
公开(公告)日：2010-03-25
申请号：US12234100
申请日：2008-09-19
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Xiao Hu Liu , Glenn J. Martyna , Martin Muser , Dennis M. Newns
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Xiao Hu Liu , Glenn J. Martyna , Martin Muser , Dennis M. Newns
CPC分类号： G11C23/00 , G11C13/0002 , G11C13/0004 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/142 , H01L45/148 , Y10T29/42
摘要： A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PHRM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM.
摘要翻译： 压电编程的非易失性存储单元结构包括可编程压阻滞回材料（PRHM），其能够通过施加的压力循环而在低电阻状态和高电阻状态之间相互转换; 机械地耦合到PHRM的压电材料，使得跨压电材料施加的电压导致施加到PRHM的拉伸或压缩应力中的一个，这取决于所施加的电压的极性; 以及与PRHM电连通的一个或多个电极，其中所述一个或多个电极被配置为提供通过所述压电材料的写入编程电流路径和通过所述PRHM的读取电流路径。
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公开(公告)号：US20100038621A1
公开(公告)日：2010-02-18
申请号：US12544089
申请日：2009-08-19
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum
IPC分类号： H01L45/00
CPC分类号： H01L45/148 , H01L45/06 , H01L45/1206 , H01L45/126 , H01L45/144
摘要： Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer.
摘要翻译： 提供了可重构的装置及其制造方法。 在一个方面，提供了可重新配置的设备。 可重构装置包括基板; 基底上的第一介电层; 导电层，凹入到与衬底相对的第一电介质层的一侧的至少一部分中; 在所述第一电介质层的与所述衬底相对的一侧上的至少一个第二电介质层，以覆盖所述导电层; 第二介电层内的加热器; 至少一个可编程通道延伸穿过第二电介质层，延伸穿过并被加热器包围并与导电层接触，该可编程通孔包括至少一个相变材料; 可编程通道上的覆盖层; 第一导电通孔和第二导电通孔，每个延伸通过第二介电层并与加热器接触; 以及延伸穿过第二介电层并与导电层接触的第三导电通孔。
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公开(公告)号：US07545667B2
公开(公告)日：2009-06-09
申请号：US11393270
申请日：2006-03-30
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
IPC分类号： G11C11/00
CPC分类号： H01L45/144 , H01L23/5226 , H01L23/5252 , H01L23/5256 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L2924/0002 , H01L2924/00
摘要： A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.
摘要翻译： 用于三维积分（3DI）半导体器件的可编程链路结构包括至少部分地填充有相变材料（PCM）和靠近PCM的加热装置的通孔。 加热装置被配置为将PCM的可变形部分的电导率切换到较低电阻结晶状态和较高电阻无定形状态。 因此，通路限定位于其一端的输入连接与位于其另一端的输出连接之间的可编程连接。
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9.发明申请公开(公告)号：US20080186760A1
公开(公告)日：2008-08-07
申请号：US11672110
申请日：2007-02-07
申请人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
发明人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
CPC分类号： H01L27/2436 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
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公开(公告)号：US07394089B2
公开(公告)日：2008-07-01
申请号：US11467294
申请日：2006-08-25
申请人： James P. Doyle , Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Xiao Hu Liu , Dennis M. Newns , Christy S. Tyberg
发明人： James P. Doyle , Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Xiao Hu Liu , Dennis M. Newns , Christy S. Tyberg
IPC分类号： H01L47/00
CPC分类号： H01L45/1233 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1666
摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.
摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。
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