摘要:
A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.
摘要:
A method of forming an image on a photoresist. The method includes: forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist.
摘要:
Disclosed is a topcoat composition comprising a polymer having a dissolution rate of at least 1500 Å/second in an aqueous alkaline developer, and at least one solvent. The topcoat composition can be used to coat a photoresist layer on a material layer on a substrate, for example, a semiconductor chip. Also disclosed is a method of forming a pattern in the material layer of the coated substrate.
摘要:
A method of forming a structure. The method including: forming a precursor layer on a substarte, the precursor layer including a resin and, polymeric nano-particles dispersed in the resin, and a solvent, each the polymeric nano-particle comprising a multi-arm core polymer and pendent polymers attached to the milti-arm core polymer and pendent polymers attached to the multi-arm core polymer, the multi-arm core polymer immiscible with the resin and the pendent polymers miscuble with the resin; heating the precursor layer to cross-link at least about 90% of the resin thereby converting the pre-baked precursor layer to a dielectric layer; forming trenches in the dielectric layer and filling the trenches with an electrical conductor; heating the dielectric layer to thermally decompose at least acout 99.5% of the polymeric nano-particles into decomposition products and to drive the decomposition products out of the dielectric layer.
摘要:
A water dispersible composition comprises a polyaniline copolymer having a weight average molecular weight of at least 30,000 and a polymeric acid comprising sulfonic acid groups. The polyaniline copolymer comprises i) about 10 mol % to about 15 mol % of a fluorine-containing first aniline repeat unit based on total moles of repeat units in the polyaniline copolymer, and ii) a second aniline repeat unit comprising no fluorine. The sulfonic acid groups of the polymeric acid are present in a molar amount greater than or equal to total moles of repeat units of the polyaniline copolymer. The composition has a conductivity of at least 0.0001 S/cm.
摘要:
Compositions are disclosed having the formula (3): [C′]k[Ta(O2)x(L′)y] (3), wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O2)x(L′)y has a charge of 0 to −3, C′ is a counterion having a charge of +1 to +3, k is an integer of 0 to 3, L′ is an oxidatively stable organic ligand having a charge of 0 to −4, and L′ comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphine oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.
摘要翻译:公开了具有式(3)的组合物:[C'] k [Ta(O 2)x(L')y](3)其中x是1至4的整数,y是1至4的整数, Ta(O 2)x(L')y具有0至-3的电荷,C'是具有+1至+3的电荷的抗衡离子,k是0至3的整数,L'是氧化稳定的有机物 具有0至-4电荷的配体,L'包括选自羧酸盐,醇盐,胺,氧化胺,膦,氧化膦,胂氧化物及其组合的给电子官能团。 该组合物具有作为高分辨率光致抗蚀剂的作用。
摘要:
A method of forming an image on a photoresist. The method includes: forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist.
摘要:
A composition of matter and a structure fabricated using the composition. The composition comprising: a resin; polymeric nano-particles dispersed in the resin, each of the polymeric nano-particle comprising a multi-arm core polymer and pendent polymers attached to the multi-arm core polymer, the multi-arm core polymer immiscible with the resin and the pendent polymers miscible with the resin; and a solvent, the solvent volatile at a first temperature, the resin cross-linkable at a second temperature, the polymeric nano-particle decomposable at a third temperature, the third temperature higher than the second temperature, the second temperature higher than the first temperature, wherein a thickness of a layer of the composition shrinks by less than about 3.5% between heating the layer from the second temperature to the third temperature.
摘要:
A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.