-
公开(公告)号：US20150162171A9
公开(公告)日：2015-06-11
申请号：US13524859
申请日：2012-06-15
CPC分类号： C23C14/564 , H01J37/32651 , H01J37/3405 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
-
2.发明申请公开(公告)号：US20140061039A1
公开(公告)日：2014-03-06
申请号：US13603933
申请日：2012-09-05
申请人： MARTIN LEE RIKER , KEITH A. MILLER
发明人： MARTIN LEE RIKER , KEITH A. MILLER
IPC分类号： C23C14/35
CPC分类号： C23C14/3407 , H01J37/3408 , H01J37/3497
摘要： Target assemblies for use in a substrate processing system are provided herein. In some embodiments, a target assembly for use in a substrate processing system may include a source material to be deposited on a substrate, a first backing plate configured to support the source material on a front side of the first backing plate, such that a front surface of the source material opposes the substrate when present, a second backing plate coupled to a backside of the first backing plate, and a plurality of sets of channels disposed between the first and second back plates. These channels permit a coolant to be provided closer to the heat source (target face) thereby facilitating more efficient heat removal from the target. More efficient heat removal from the target results in a target with a lesser thermal gradient and therefore less mechanical bowing/deformation.
摘要翻译： 本文提供了用于基板处理系统的目标组件。 在一些实施例中，用于衬底处理系统的目标组件可以包括待沉积在衬底上的源材料，第一背衬板被配置为将源材料支撑在第一衬板的前侧，使得前部 源材料的表面当存在时与基底相对，耦合到第一背板的背面的第二背板和设置在第一和第二背板之间的多组通道。 这些通道允许冷却剂更靠近热源（目标面）提供，从而有助于更有效地从目标中去除热量。 从目标的更有效的热量去除导致具有较小热梯度的目标，因此较少的机械弯曲/变形。
-
公开(公告)号：US08696878B2
公开(公告)日：2014-04-15
申请号：US13457441
申请日：2012-04-26
IPC分类号： C25B9/00 , C23C14/00 , C25B11/00 , C25B13/00 , B05C11/11 , C23C16/00 , C23C16/458 , C23C14/34 , C23C14/50 , C23C14/56 , H01J37/32 , H01J37/34
CPC分类号： C23C16/4585 , C23C14/34 , C23C14/50 , C23C14/564 , H01J37/32623 , H01J37/32633 , H01J37/3408 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
摘要翻译： 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。
-
公开(公告)号：US20120033340A1
公开(公告)日：2012-02-09
申请号：US13198204
申请日：2011-08-04
IPC分类号： H02N13/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck and method of use thereof is provided herein. In some embodiments, an electrostatic chuck may include a disk having a first side to support a substrate thereon and a second side, opposing the first side, to provide an interface to selectively couple the disk to a thermal control plate, a first electrode disposed within the disk proximate the first side to electrostatically couple the substrate to the disk and a second electrode disposed within the disk proximate the opposing side of the disk to electrostatically couple the disk to the thermal control plate. In some embodiments, the second electrode may also be configured to heat the disk.
摘要翻译： 本文提供了静电卡盘及其使用方法。 在一些实施例中，静电卡盘可以包括具有支撑其上的基板的第一侧的盘和与第一侧相对的第二侧，以提供用于选择性地将盘耦合到热控制板的界面，第一电极设置在 靠近第一侧的盘，以将衬底静电耦合到盘，以及设置在靠近盘的相对侧的盘内的第二电极，以将盘静电耦合到热控制板。 在一些实施例中，第二电极也可以被配置为加热盘。
-
公开(公告)号：US20090260982A1
公开(公告)日：2009-10-22
申请号：US12423444
申请日：2009-04-14
IPC分类号： C23C14/34
CPC分类号： C23C16/4585 , C23C14/34 , C23C14/50 , C23C14/564 , H01J37/32623 , H01J37/32633 , H01J37/3408 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
摘要翻译： 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。
-
公开(公告)号：US20140046475A1
公开(公告)日：2014-02-13
申请号：US13570712
申请日：2012-08-09
申请人： WINSOR LAM , KEITH A. MILLER , CARL JOHNSON , MARTIN LEE RIKER , YE XU
发明人： WINSOR LAM , KEITH A. MILLER , CARL JOHNSON , MARTIN LEE RIKER , YE XU
CPC分类号： C23C14/046 , C23C14/54 , H01L21/2855 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L21/76879
摘要： Methods and apparatus for processing a substrate in a process chamber, include receiving process control parameters for one or more devices from a process controller to perform a first chamber process, determining a time to send each of the process control parameters to the one or more devices, for each of the one or more devices, adjusting the determined time to send each of the process control parameters using specific signal process delays associated with each of the one or more devices, and sending the process control parameters to each of the one or more devices at the adjusted times to perform the first chamber process, wherein the synchronization controller includes one or more output channels, each channel directly coupled to one of the one or more devices.
摘要翻译： 用于在处理室中处理衬底的方法和装置包括从过程控制器接收用于一个或多个设备的过程控制参数，以执行第一室过程，确定将每个过程控制参数发送到一个或多个设备的时间 对于所述一个或多个设备中的每一个，使用与所述一个或多个设备中的每个设备相关联的特定信号处理延迟来调整所确定的时间以发送每个所述过程控制参数，以及将所述过程控制参数发送到所述一个或多个设备 在调整的时间进行第一室处理，其中所述同步控制器包括一个或多个输出通道，每个通道直接耦合到所述一个或多个设备之一。
-
公开(公告)号：US20090308739A1
公开(公告)日：2009-12-17
申请号：US12482846
申请日：2009-06-11
IPC分类号： C23C14/34
CPC分类号： H01J37/34 , H01J37/3447
摘要： Embodiments described herein generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator for mechanical and electrical coupling with a shield member positioned between a sputtering target and a substrate support pedestal is provided. The collimator comprises a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough and where the apertures located in the central region have a higher aspect ratio than the apertures located in the peripheral region.
摘要翻译： 本文描述的实施例通常涉及用于将材料均匀溅射沉积到衬底上的高纵横比特征的底部和侧壁中的装置和方法。 在一个实施例中，提供了用于与位于溅射靶和衬底支撑座之间的屏蔽构件进行机械和电耦合的准直器。 准直器包括中心区域和周边区域，其中准直器具有穿过其中延伸的多个孔，并且位于中心区域中的孔具有比位于周边区域中的孔更高的纵横比。
-
公开(公告)号：US09062379B2
公开(公告)日：2015-06-23
申请号：US13524859
申请日：2012-06-15
CPC分类号： C23C14/564 , H01J37/32651 , H01J37/3405 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
摘要翻译： 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。
-
公开(公告)号：US20130334038A1
公开(公告)日：2013-12-19
申请号：US13524859
申请日：2012-06-15
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , H01J37/32651 , H01J37/3405 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
-
公开(公告)号：US08559159B2
公开(公告)日：2013-10-15
申请号：US13198204
申请日：2011-08-04
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck and method of use thereof is provided herein. In some embodiments, an electrostatic chuck may include a disk having a first side to support a substrate thereon and a second side, opposing the first side, to provide an interface to selectively couple the disk to a thermal control plate, a first electrode disposed within the disk proximate the first side to electrostatically couple the substrate to the disk and a second electrode disposed within the disk proximate the opposing side of the disk to electrostatically couple the disk to the thermal control plate. In some embodiments, the second electrode may also be configured to heat the disk.
摘要翻译： 本文提供了静电卡盘及其使用方法。 在一些实施例中，静电卡盘可以包括具有支撑其上的基板的第一侧的盘和与第一侧相对的第二侧，以提供用于选择性地将盘耦合到热控制板的界面，第一电极设置在 靠近第一侧的盘，以将衬底静电耦合到盘，以及设置在靠近盘的相对侧的盘内的第二电极，以将盘静电耦合到热控制板。 在一些实施例中，第二电极也可以被配置为加热盘。
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.012 秒)