MANAGEMENT APPARATUS FOR AIR-CONDITIONING APPARATUS AND MANAGEMENT SYSTEM FOR AIR-CONDITIONING APPARATUS
    1.
    发明申请
    MANAGEMENT APPARATUS FOR AIR-CONDITIONING APPARATUS AND MANAGEMENT SYSTEM FOR AIR-CONDITIONING APPARATUS 有权
    空调设备管理装置和空调设备管理系统

    公开(公告)号:US20160033153A1

    公开(公告)日:2016-02-04

    申请号:US14774912

    申请日:2013-04-08

    发明人: Mitsuru KITAZAKI

    IPC分类号: F24F11/00 G05B15/02 H04W4/02

    摘要: A management apparatus for an air-conditioning apparatus configured to manage a plurality of air-conditioning apparatuses configured to condition air in an air-conditioning target space includes: a management-side communication unit to receive data of arrival locations and arrival times in the space transmitted from a plurality of terminal devices; and a management-side arithmetic unit configured to perform totaling based on the data of the arrival locations and the arrival times received by the management-side communication unit, and to perform a process of determining an order in which operation is started in the plurality of air-conditioning apparatuses. Operation is performed in order, and thus a steep increase in power consumption can be reduced.

    摘要翻译: 一种用于管理配置成调节空调目标空间中的空气的多个空调装置的空调装置的管理装置,包括:管理侧通信单元,用于接收空间中的到达位置和到达时间的数据 从多个终端装置发送; 以及管理侧算术单元,被配置为基于由所述管理侧通信单元接收到的到达位置和到达时间的数据来执行总计,并且执行确定在所述多个 空调设备。 按顺序执行操作,因此可以降低功耗的急剧增加。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20230140664A1

    公开(公告)日:2023-05-04

    申请号:US17814298

    申请日:2022-07-22

    摘要: The object is to provide a technology for enabling enhancement of the reliability of a semiconductor device. The semiconductor device includes: a semiconductor element; a piece of linear wire connected to an upper surface of the semiconductor element; a coating material in contact with the semiconductor element, and the piece of wire in an upper region on the semiconductor element; and a sealant protecting the semiconductor element, the piece of wire, and the coating material, wherein the coating material contains substances with covalent bonds between oxygen and each of silicon and a metal, a silicon oxide, and siloxane.

    METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR CHIP

    公开(公告)号:US20230137754A1

    公开(公告)日:2023-05-04

    申请号:US17821616

    申请日:2022-08-23

    发明人: Chihiro TADOKORO

    IPC分类号: H01L21/78 H01L23/544

    摘要: Provided is a method of manufacturing a silicon carbide semiconductor device that suppresses the crawling up of a bonding material to the side surfaces of a chip, thereby suppressing a decrease in productivity. In the method of manufacturing the silicon carbide semiconductor device, the method includes, preparing a semiconductor wafer, forming semiconductor elements on the semiconductor wafer, forming a trench, which has a bottom having a roundness, on one main surface of the semiconductor wafer, and performing dicing at a position of the trench having the bottom having the roundness thereby separating the semiconductor elements into individual pieces.

    THREE-LEVEL POWER CONVERTER AND METHOD OF CONTROLLING INTERMEDIATE POTENTIAL OF DIRECT CURRENT POWER SUPPLY UNIT

    公开(公告)号:US20230137557A1

    公开(公告)日:2023-05-04

    申请号:US17801599

    申请日:2020-03-27

    IPC分类号: H02M7/483 H02M7/5387 H02M1/14

    摘要: A three-level power converter includes a direct current power supply unit including a filter capacitor connected between a high potential line and an intermediate potential line and a filter capacitor connected between the intermediate potential line and a low potential line, and a power conversion circuit that converts a three-level direct current voltage output from the high potential line, the intermediate potential line, and the low potential line into a three-phase alternating current voltage. A controller generates an imbalance signal representing an imbalance between a first capacitor voltage and a second capacitor voltage on the basis of values detected by voltage sensors, and generates a modulation signal for causing the power conversion circuit to perform a two-phase modulation operation on the basis of a superimposed signal obtained by superimposing the imbalance signal on a reference signal of the three-phase alternating current voltage.

    ATTACK MEANS EVALUATION APPARATUS, ATTACK MEANS EVALUATION METHOD, AND COMPUTER READABLE MEDIUM

    公开(公告)号:US20230137325A1

    公开(公告)日:2023-05-04

    申请号:US18088453

    申请日:2022-12-23

    IPC分类号: G06F21/55

    摘要: An attack means evaluation apparatus (100) evaluates an attack means used in a cyberattack. A score value calculation unit (110) obtains a plurality of attack means, and for each attack means of the plurality of attack means, calculates a score value that shows validity of an attack on an attack target system. A means selection unit (120) selects an attack means that is valid as an attack on the attack target system from the plurality of attack means using the score value of each attack means of the plurality of attack means and a threshold (173). A means execution unit (130) executes the attack means that is selected on the attack target system, and verifies whether or not an attack for achieving a final aim of the cyberattack is possible based an execution result of the attack means that is selected.

    SEMICONDUCTOR DEVICE
    6.
    发明申请

    公开(公告)号:US20230135461A1

    公开(公告)日:2023-05-04

    申请号:US17862607

    申请日:2022-07-12

    摘要: The semiconductor device includes: a heat spreader; a plurality of semiconductor elements; and one or a plurality of temperature detection elements. If a line segment connecting centers of two respective adjacent ones of the semiconductor elements is defined as X, a straight line that passes through one of the centers of the two adjacent semiconductor elements and that is perpendicular to X and parallel to the one-side surface of the heat spreader is defined as Y1, and a straight line that passes through another one of the centers of the two adjacent semiconductor elements and that is perpendicular to X and parallel to the one-side surface of the heat spreader is defined as Y2, at least a part of the temperature detection element is located in an arrangement region interposed between Y1 and Y2, as seen in a direction perpendicular to the one-side surface of the heat spreader.

    POWER CONTROL DEVICE, ELECTRIC MOTOR INCLUDING POWER CONTROL DEVICE, AND AIR-CONDITIONING APPARATUS INCLUDING ELECTRIC MOTOR

    公开(公告)号:US20230133289A1

    公开(公告)日:2023-05-04

    申请号:US17915560

    申请日:2020-06-16

    IPC分类号: H02K11/33

    摘要: Provided is a power control device that drives an electric motor including a rotor into which a rotary shaft is inserted and a stator, the stator being provided on an outer peripheral side of the rotor, the power control device including: a substrate having a through hole and disposed to face the rotor and the stator, the rotary shaft being caused to pass through the through hole; a power semiconductor module mounted on the substrate and including a drive circuit; and a microcomputer mounted on the substrate, and configured to control power supplied to the electric motor, wherein the substrate is integrally formed with the stator by using a molded resin, and a first part having a lower thermal conductivity than the molded resin is disposed on the substrate at a position between the power semiconductor module and the microcomputer.

    Semiconductor device and method of manufacturing semiconductor device

    公开(公告)号:US11640953B2

    公开(公告)日:2023-05-02

    申请号:US17341518

    申请日:2021-06-08

    发明人: Masatake Harada

    摘要: An object is to provide a technique capable of regulating a direction in which an adhesive agent used for bonding a base plate and a case is wetly widened. A semiconductor device includes a base plate and a case. The case is bonded to a peripheral edge part of the base plate via an adhesive agent. A dip which is an application position where the adhesive agent is applied and an inclined surface directed downward from the dip toward an outer peripheral side or an inclined surface directed downward from the dip toward an inner peripheral side are formed in the peripheral edge part of the base plate.