摘要:
A management apparatus for an air-conditioning apparatus configured to manage a plurality of air-conditioning apparatuses configured to condition air in an air-conditioning target space includes: a management-side communication unit to receive data of arrival locations and arrival times in the space transmitted from a plurality of terminal devices; and a management-side arithmetic unit configured to perform totaling based on the data of the arrival locations and the arrival times received by the management-side communication unit, and to perform a process of determining an order in which operation is started in the plurality of air-conditioning apparatuses. Operation is performed in order, and thus a steep increase in power consumption can be reduced.
摘要:
The object is to provide a technology for enabling enhancement of the reliability of a semiconductor device. The semiconductor device includes: a semiconductor element; a piece of linear wire connected to an upper surface of the semiconductor element; a coating material in contact with the semiconductor element, and the piece of wire in an upper region on the semiconductor element; and a sealant protecting the semiconductor element, the piece of wire, and the coating material, wherein the coating material contains substances with covalent bonds between oxygen and each of silicon and a metal, a silicon oxide, and siloxane.
摘要:
Provided is a method of manufacturing a silicon carbide semiconductor device that suppresses the crawling up of a bonding material to the side surfaces of a chip, thereby suppressing a decrease in productivity. In the method of manufacturing the silicon carbide semiconductor device, the method includes, preparing a semiconductor wafer, forming semiconductor elements on the semiconductor wafer, forming a trench, which has a bottom having a roundness, on one main surface of the semiconductor wafer, and performing dicing at a position of the trench having the bottom having the roundness thereby separating the semiconductor elements into individual pieces.
摘要:
A three-level power converter includes a direct current power supply unit including a filter capacitor connected between a high potential line and an intermediate potential line and a filter capacitor connected between the intermediate potential line and a low potential line, and a power conversion circuit that converts a three-level direct current voltage output from the high potential line, the intermediate potential line, and the low potential line into a three-phase alternating current voltage. A controller generates an imbalance signal representing an imbalance between a first capacitor voltage and a second capacitor voltage on the basis of values detected by voltage sensors, and generates a modulation signal for causing the power conversion circuit to perform a two-phase modulation operation on the basis of a superimposed signal obtained by superimposing the imbalance signal on a reference signal of the three-phase alternating current voltage.
摘要:
An attack means evaluation apparatus (100) evaluates an attack means used in a cyberattack. A score value calculation unit (110) obtains a plurality of attack means, and for each attack means of the plurality of attack means, calculates a score value that shows validity of an attack on an attack target system. A means selection unit (120) selects an attack means that is valid as an attack on the attack target system from the plurality of attack means using the score value of each attack means of the plurality of attack means and a threshold (173). A means execution unit (130) executes the attack means that is selected on the attack target system, and verifies whether or not an attack for achieving a final aim of the cyberattack is possible based an execution result of the attack means that is selected.
摘要:
The semiconductor device includes: a heat spreader; a plurality of semiconductor elements; and one or a plurality of temperature detection elements. If a line segment connecting centers of two respective adjacent ones of the semiconductor elements is defined as X, a straight line that passes through one of the centers of the two adjacent semiconductor elements and that is perpendicular to X and parallel to the one-side surface of the heat spreader is defined as Y1, and a straight line that passes through another one of the centers of the two adjacent semiconductor elements and that is perpendicular to X and parallel to the one-side surface of the heat spreader is defined as Y2, at least a part of the temperature detection element is located in an arrangement region interposed between Y1 and Y2, as seen in a direction perpendicular to the one-side surface of the heat spreader.
摘要:
Provided is a power control device that drives an electric motor including a rotor into which a rotary shaft is inserted and a stator, the stator being provided on an outer peripheral side of the rotor, the power control device including: a substrate having a through hole and disposed to face the rotor and the stator, the rotary shaft being caused to pass through the through hole; a power semiconductor module mounted on the substrate and including a drive circuit; and a microcomputer mounted on the substrate, and configured to control power supplied to the electric motor, wherein the substrate is integrally formed with the stator by using a molded resin, and a first part having a lower thermal conductivity than the molded resin is disposed on the substrate at a position between the power semiconductor module and the microcomputer.
摘要:
Provided is a resin-sealed semiconductor device that can regulate the thickness of a joining material joining a semiconductor element and a lead frame and inhibit the joining material from leaking out of a proper range. The resin-sealed semiconductor device includes a second lead frame joined via a second joining material above a semiconductor element joined above a heat spreader. The second lead frame has, on a surface thereof opposed to the semiconductor element, a protrusion to regulate a thickness of the second joining material, and a groove formed at a peripheral part of the second joining material.
摘要:
A communication system includes a user apparatus; and a base station including a distributed unit (DU) configured to wirelessly communicate with the user apparatus and a central unit (CU) connected to the distributed unit. The base station including the CU and the DU supports packet duplication, and the DU notifies the user apparatus of starting the packet duplication.
摘要:
An object is to provide a technique capable of regulating a direction in which an adhesive agent used for bonding a base plate and a case is wetly widened. A semiconductor device includes a base plate and a case. The case is bonded to a peripheral edge part of the base plate via an adhesive agent. A dip which is an application position where the adhesive agent is applied and an inclined surface directed downward from the dip toward an outer peripheral side or an inclined surface directed downward from the dip toward an inner peripheral side are formed in the peripheral edge part of the base plate.