ILD LAYER WITH INTERMEDIATE DIELECTRIC CONSTANT MATERIAL IMMEDIATELY BELOW SILICON DIOXIDE BASED ILD LAYER
    6.
    发明申请
    ILD LAYER WITH INTERMEDIATE DIELECTRIC CONSTANT MATERIAL IMMEDIATELY BELOW SILICON DIOXIDE BASED ILD LAYER 审中-公开
    具有中等介电常数材料的ILD层立即在二氧化硅二氧化硅基底层

    公开(公告)号:US20070187828A1

    公开(公告)日:2007-08-16

    申请号:US11307600

    申请日:2006-02-14

    IPC分类号: H01L23/52

    摘要: An integrated circuit (IC) chip and related package are disclosed including a first interlevel dielectric (ILD) layer(s) including an ultra low dielectric constant (ULK) material, a second ILD layer(s) including a silicon dioxide (SiO2) based dielectric material above the first ILD layer(s), and a transitional ILD layer including an intermediate dielectric constant material. The transitional ILD layer is positioned directly below a lowermost one of the second ILD layer(s), excepting any isolation layer, which represents the layer most susceptible to failure. The intermediate dielectric constant material can have a dielectric constant and an elastic modulus greater than that of the ULK material and less than that of the SiO2 based dielectric material. Hence, the intermediate dielectric constant provides adequate electrical properties, but also absorbs more of the stress than the typical ULK material, which reduces the likelihood of failure. A method of forming the IC chip is also disclosed.

    摘要翻译: 公开了一种集成电路(IC)芯片和相关封装,其包括包括超低介电常数(ULK)材料的第一层间介电层(ILD)层,包括二氧化硅(SiO 2 基介电材料,以及包含中间介电常数材料的过渡ILD层。 过渡ILD层直接位于第二ILD层的最下面之一之外,除了任何隔离层,其代表最易受故障的层。 中间介电常数材料可以具有比ULK材料的介电常数和弹性模量更大的弹性模量,并且小于基于SiO 2的介电材料的弹性模量。 因此,中间介电常数提供足够的电气性能,但也比典型的ULK材料吸收更多的应力,这降低了失效的可能性。 还公开了一种形成IC芯片的方法。

    Method for forming a perovskite thin film using a sputtering method with a fully oxidized perovskite target
    9.
    发明授权
    Method for forming a perovskite thin film using a sputtering method with a fully oxidized perovskite target 失效
    使用具有完全氧化的钙钛矿靶的溅射法形成钙钛矿薄膜的方法

    公开(公告)号:US06210545B1

    公开(公告)日:2001-04-03

    申请号:US09447626

    申请日:1999-11-23

    IPC分类号: C23C1434

    摘要: An inventive method for forming a thin film comprises the steps of preparing a sputter-target of a material which is fully oxidized and crystallized to a perovskite structure, sputter-depositing a thin film on top of a sample with the target in an inert gas atmosphere, and annealing the thin film in non-oxygen ambient. With the use of such a target, it is possible to reduce the negative ion effect during the sputter deposition and to eliminate the presence of oxygen during the annealing process.

    摘要翻译: 用于形成薄膜的本发明的方法包括以下步骤:制备完全氧化并结晶成钙钛矿结构的材料的溅射靶,在惰性气体气氛中用靶溅射沉积样品顶部的薄膜 ,并在非氧环境中退火薄膜。 通过使用这样的靶,可以减少在溅射沉积期间的负离子效应,并且消除退火过程中氧的存在。